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PD85025TR-E PD85025TR-E STMicroelectronics steval-tdr022v1.pdf Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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SM6T220CA SM6T220CA STMicroelectronics cd00000725.pdf Description: TVS DIODE 188VWM 328VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMAJ154A-TR SMAJ154A-TR STMicroelectronics cd00001333.pdf Description: TVS DIODE 154VWM 317VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ22CA-TR SMAJ22CA-TR STMicroelectronics en.CD00001333.pdf Description: TVS DIODE 22VWM 48.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 48.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ26CA-TR SMAJ26CA-TR STMicroelectronics en.CD00001333.pdf Description: TVS DIODE 26VWM 53.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 53.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ28A-TR SMAJ28A-TR STMicroelectronics cd00001333.pdf Description: TVS DIODE 28VWM 59VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ70A-TR SMAJ70A-TR STMicroelectronics cd00001333.pdf Description: TVS DIODE 70VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMBJ130A-TR SMBJ130A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 130VWM 209VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMCJ85CA-TR SMCJ85CA-TR STMicroelectronics cd00001367.pdf Description: TVS DIODE 85VWM 178VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A (8/20µs)
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SMP30-240 SMP30-240 STMicroelectronics en.CD00001359.pdf Description: THYRISTOR 240V 70A DO214AC
Packaging: Cut Tape (CT)
Capacitance: 20pF
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 240V
Supplier Device Package: SMA (DO-214AC)
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 70 A
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SMP30-270 SMP30-270 STMicroelectronics cd00001359.pdf Description: THYRISTOR 270V 70A DO-214AC
Packaging: Cut Tape (CT)
Capacitance: 20pF
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 360V
Voltage - Off State: 270V
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 70 A
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STB14NK50ZT4 STB14NK50ZT4 STMicroelectronics en.CD00002817.pdf Description: MOSFET N-CH 500V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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STB170NF04 STB170NF04 STMicroelectronics en.CD00231343.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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STB6NK60ZT4 STB6NK60ZT4 STMicroelectronics en.CD00002937.pdf Description: MOSFET N-CH 600V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
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STB9NK50ZT4 STB9NK50ZT4 STMicroelectronics en.CD00002970.pdf Description: MOSFET N-CH 500V 7.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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STB9NK60ZT4 STB9NK60ZT4 STMicroelectronics en.CD00002961.pdf Description: MOSFET N-CH 600V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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STD13003T4 STD13003T4 STMicroelectronics en.CD00002602.pdf Description: TRANS NPN 400V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
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STD25NF10LA STD25NF10LA STMicroelectronics en.DM00039673.pdf Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
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STD40NF3LLT4 STD40NF3LLT4 STMicroelectronics en.CD00002091.pdf Description: MOSFET N-CH 30V 40A DPAK
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STF826 STF826 STMicroelectronics en.CD00071185.pdf Description: TRANS PNP 30V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
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STGD7NB60ST4 STGD7NB60ST4 STMicroelectronics en.cd00001598.pdf Description: IGBT 600V 15A 55W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
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STL15N3LLH5 STL15N3LLH5 STMicroelectronics CD00195876.pdf Description: MOSFET N-CH 30V 15A POWERFLAT
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STPS130U STPS130U STMicroelectronics en.CD00000992.pdf Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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STPS1H100MF STPS1H100MF STMicroelectronics en.CD00197681.pdf Description: DIODE SCHOTT 100V 1A STMITE FLAT
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
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STPS20150CG-TR STPS20150CG-TR STMicroelectronics en.CD00002411.pdf Description: DIODE ARRAY SCHOT 150V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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STPS20SM100SG-TR STPS20SM100SG-TR STMicroelectronics en.CD00228907.pdf Description: DIODE SCHOTTKY 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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STPS30150CG-TR STPS30150CG-TR STMicroelectronics en.CD00002412.pdf Description: DIODE ARRAY SCHOT 150V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 150 V
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STPS30SM100SG-TR STPS30SM100SG-TR STMicroelectronics en.CD00228797.pdf Description: DIODE SCHOTTKY 100V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 100 V
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STPS3L60QRL STPS3L60QRL STMicroelectronics en.CD00002286.pdf Description: DIODE SCHOTTKY 60V 3A DO15
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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STPS40SM100CG-TR STPS40SM100CG-TR STMicroelectronics en.CD00228908.pdf Description: DIODE ARRAY SCHOTTKY 100V D2PAK
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STPS660CB-TR STPS660CB-TR STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
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STPS745G-TR STPS745G-TR STMicroelectronics en.CD00000822.pdf Description: DIODE SCHOTTKY 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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STS1DNC45 STS1DNC45 STMicroelectronics en.CD00003069.pdf Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
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STS6NF20V STS6NF20V STMicroelectronics en.CD00002342.pdf Description: MOSFET N-CH 20V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
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STTH1002CB-TR STTH1002CB-TR STMicroelectronics en.CD00005113.pdf Description: DIODE ARRAY GP 200V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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STTH3R04RL STTH3R04RL STMicroelectronics stth3r04.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TN2540-600G-TR TN2540-600G-TR STMicroelectronics en.CD00002272.pdf Description: SCR 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 314A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
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TPI12011NRL TPI12011NRL STMicroelectronics CD00000834.pdf Description: THYRISTOR 30A 8SOIC
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Z0103MN 6AA4 Z0103MN 6AA4 STMicroelectronics en.CD00002268.pdf Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
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Z0107MA 5AL2 Z0107MA 5AL2 STMicroelectronics en.CD00002268.pdf Description: TRIAC SENS GATE 600V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
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Z0107NA 5AL2 Z0107NA 5AL2 STMicroelectronics en.CD00002268.pdf Description: TRIAC SENS GATE 800V 1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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ESDA6V1-5P6 ESDA6V1-5P6 STMicroelectronics cd00091403.pdf Description: TVS DIODE 3VWM SOT666IP
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666IP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
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LFTVS10-1F3 LFTVS10-1F3 STMicroelectronics Description: TVS DIODE 8VWM 13VC 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: 4-FlipChip (0.77x0.77)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
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100+1 EUR
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1000+0.7 EUR
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Z0107SN 5AA4 Z0107SN 5AA4 STMicroelectronics en.CD00002268.pdf Description: TRIAC SENS GATE 700V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 700 V
Produkt ist nicht verfügbar
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STD40NF3LLT4 STD40NF3LLT4 STMicroelectronics en.CD00002091.pdf Description: MOSFET N-CH 30V 40A DPAK
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STL15N3LLH5 STL15N3LLH5 STMicroelectronics CD00195876.pdf Description: MOSFET N-CH 30V 15A POWERFLAT
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TPI12011NRL TPI12011NRL STMicroelectronics CD00000834.pdf Description: THYRISTOR 30A 8SOIC
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LET9045 LET9045 STMicroelectronics en.CD00230370.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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LET9045S LET9045S STMicroelectronics en.CD00230370.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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LET9060STR LET9060STR STMicroelectronics en.DM00022963.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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LET9060TR LET9060TR STMicroelectronics en.DM00022963.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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STB95N4F3 STB95N4F3 STMicroelectronics en.CD00153132.pdf Description: MOSFET N-CH 40V 80A D2PAK
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STF6N65K3 STF6N65K3 STMicroelectronics en.CD00297329.pdf Description: MOSFET N-CH 650V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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STGW50H60DF STGW50H60DF STMicroelectronics STGW50H60DF.pdf Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/178ns
Switching Energy: 890µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 360 W
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STGW60H65F STGW60H65F STMicroelectronics STGW60H65F.pdf Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 65ns/180ns
Switching Energy: 750µJ (on), 1.05mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STPS30M60DJF-TR STPS30M60DJF-TR STMicroelectronics en.DM00053270.pdf Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
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3000+0.89 EUR
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9000+0.8 EUR
15000+0.76 EUR
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LET9060TR LET9060TR STMicroelectronics en.DM00022963.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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STB95N4F3 STB95N4F3 STMicroelectronics en.CD00153132.pdf Description: MOSFET N-CH 40V 80A D2PAK
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STPS30M60DJF-TR STPS30M60DJF-TR STMicroelectronics en.DM00053270.pdf Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
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LDP24A LDP24A STMicroelectronics en.CD00001549.pdf Description: TVS DIODE 24VWM 40VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 40V
Power Line Protection: No
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PD85025TR-E steval-tdr022v1.pdf
PD85025TR-E
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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SM6T220CA cd00000725.pdf
SM6T220CA
Hersteller: STMicroelectronics
Description: TVS DIODE 188VWM 328VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMAJ154A-TR cd00001333.pdf
SMAJ154A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 154VWM 317VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ22CA-TR en.CD00001333.pdf
SMAJ22CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 22VWM 48.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 48.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ26CA-TR en.CD00001333.pdf
SMAJ26CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 26VWM 53.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 53.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ28A-TR cd00001333.pdf
SMAJ28A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 28VWM 59VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ70A-TR cd00001333.pdf
SMAJ70A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 70VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMBJ130A-TR cd00001366.pdf
SMBJ130A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 130VWM 209VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMCJ85CA-TR cd00001367.pdf
SMCJ85CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 85VWM 178VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A (8/20µs)
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SMP30-240 en.CD00001359.pdf
SMP30-240
Hersteller: STMicroelectronics
Description: THYRISTOR 240V 70A DO214AC
Packaging: Cut Tape (CT)
Capacitance: 20pF
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 240V
Supplier Device Package: SMA (DO-214AC)
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 70 A
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SMP30-270 cd00001359.pdf
SMP30-270
Hersteller: STMicroelectronics
Description: THYRISTOR 270V 70A DO-214AC
Packaging: Cut Tape (CT)
Capacitance: 20pF
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 360V
Voltage - Off State: 270V
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 70 A
auf Bestellung 4272 Stücke:
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STB14NK50ZT4 en.CD00002817.pdf
STB14NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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STB170NF04 en.CD00231343.pdf
STB170NF04
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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3+8.48 EUR
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STB6NK60ZT4 en.CD00002937.pdf
STB6NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
auf Bestellung 754 Stücke:
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STB9NK50ZT4 en.CD00002970.pdf
STB9NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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STB9NK60ZT4 en.CD00002961.pdf
STB9NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
auf Bestellung 454 Stücke:
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STD13003T4 en.CD00002602.pdf
STD13003T4
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
auf Bestellung 2236 Stücke:
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STD25NF10LA en.DM00039673.pdf
STD25NF10LA
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 3592 Stücke:
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6+3.5 EUR
10+2.23 EUR
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STD40NF3LLT4 en.CD00002091.pdf
STD40NF3LLT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
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STF826 en.CD00071185.pdf
STF826
Hersteller: STMicroelectronics
Description: TRANS PNP 30V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
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STGD7NB60ST4 en.cd00001598.pdf
STGD7NB60ST4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 55W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
auf Bestellung 4442 Stücke:
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5+5.13 EUR
10+3.32 EUR
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STL15N3LLH5 CD00195876.pdf
STL15N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 15A POWERFLAT
Produkt ist nicht verfügbar
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STPS130U en.CD00000992.pdf
STPS130U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 11892 Stücke:
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31+0.69 EUR
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STPS1H100MF en.CD00197681.pdf
STPS1H100MF
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 100V 1A STMITE FLAT
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
auf Bestellung 9552 Stücke:
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25+0.83 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
2000+0.2 EUR
5000+0.17 EUR
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STPS20150CG-TR en.CD00002411.pdf
STPS20150CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 150V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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STPS20SM100SG-TR en.CD00228907.pdf
STPS20SM100SG-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Produkt ist nicht verfügbar
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STPS30150CG-TR en.CD00002412.pdf
STPS30150CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 150V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 150 V
Produkt ist nicht verfügbar
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STPS30SM100SG-TR en.CD00228797.pdf
STPS30SM100SG-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 100 V
auf Bestellung 17541 Stücke:
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STPS3L60QRL en.CD00002286.pdf
STPS3L60QRL
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 3A DO15
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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STPS40SM100CG-TR en.CD00228908.pdf
STPS40SM100CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 100V D2PAK
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STPS660CB-TR power-schottky-medium-vf-and-ir.html
STPS660CB-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Produkt ist nicht verfügbar
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STPS745G-TR en.CD00000822.pdf
STPS745G-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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24+0.89 EUR
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STS1DNC45 en.CD00003069.pdf
STS1DNC45
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
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5+4.76 EUR
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STS6NF20V en.CD00002342.pdf
STS6NF20V
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 5694 Stücke:
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12+1.78 EUR
17+1.31 EUR
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STTH1002CB-TR en.CD00005113.pdf
STTH1002CB-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 12424 Stücke:
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11+1.96 EUR
18+1.23 EUR
100+0.8 EUR
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STTH3R04RL stth3r04.pdf
STTH3R04RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TN2540-600G-TR en.CD00002272.pdf
TN2540-600G-TR
Hersteller: STMicroelectronics
Description: SCR 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 314A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1227 Stücke:
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4+6.18 EUR
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TPI12011NRL CD00000834.pdf
TPI12011NRL
Hersteller: STMicroelectronics
Description: THYRISTOR 30A 8SOIC
auf Bestellung 2392 Stücke:
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Z0103MN 6AA4 en.CD00002268.pdf
Z0103MN 6AA4
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
auf Bestellung 12881 Stücke:
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22+0.99 EUR
35+0.61 EUR
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Z0107MA 5AL2 en.CD00002268.pdf
Z0107MA 5AL2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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Z0107NA 5AL2 en.CD00002268.pdf
Z0107NA 5AL2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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ESDA6V1-5P6 cd00091403.pdf
ESDA6V1-5P6
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOT666IP
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666IP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
auf Bestellung 14 Stücke:
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LFTVS10-1F3
LFTVS10-1F3
Hersteller: STMicroelectronics
Description: TVS DIODE 8VWM 13VC 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: 4-FlipChip (0.77x0.77)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 1200 Stücke:
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9+2.4 EUR
14+1.52 EUR
100+1 EUR
500+0.77 EUR
1000+0.7 EUR
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Z0107SN 5AA4 en.CD00002268.pdf
Z0107SN 5AA4
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 700V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 700 V
Produkt ist nicht verfügbar
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STD40NF3LLT4 en.CD00002091.pdf
STD40NF3LLT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
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STL15N3LLH5 CD00195876.pdf
STL15N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 15A POWERFLAT
Produkt ist nicht verfügbar
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TPI12011NRL CD00000834.pdf
TPI12011NRL
Hersteller: STMicroelectronics
Description: THYRISTOR 30A 8SOIC
Produkt ist nicht verfügbar
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LET9045 en.CD00230370.pdf
LET9045
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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LET9045S en.CD00230370.pdf
LET9045S
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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LET9060STR en.DM00022963.pdf
LET9060STR
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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LET9060TR en.DM00022963.pdf
LET9060TR
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
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STB95N4F3 en.CD00153132.pdf
STB95N4F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Produkt ist nicht verfügbar
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STF6N65K3 en.CD00297329.pdf
STF6N65K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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STGW50H60DF STGW50H60DF.pdf
STGW50H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/178ns
Switching Energy: 890µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STGW60H65F STGW60H65F.pdf
STGW60H65F
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 65ns/180ns
Switching Energy: 750µJ (on), 1.05mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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STPS30M60DJF-TR en.DM00053270.pdf
STPS30M60DJF-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.89 EUR
6000+0.83 EUR
9000+0.8 EUR
15000+0.76 EUR
Mindestbestellmenge: 3000 Stücke
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LET9060TR en.DM00022963.pdf
LET9060TR
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB95N4F3 en.CD00153132.pdf
STB95N4F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.09 EUR
10+4.57 EUR
100+3.68 EUR
Mindestbestellmenge: 5 Stücke
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STPS30M60DJF-TR en.DM00053270.pdf
STPS30M60DJF-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
11+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
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LDP24A en.CD00001549.pdf
LDP24A
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 40VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 40V
Power Line Protection: No
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.98 EUR
10+5.24 EUR
Mindestbestellmenge: 3 Stücke
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