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STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Produkt ist nicht verfügbar
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 4000 Stücke:
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1000+10.25 EUR
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STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STH130N10F3-2 STH130N10F3-2 STMicroelectronics STx%28x%29130N10F3%28-2%29.pdf Description: MOSFET N-CH 100V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 7500 Stücke:
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2500+0.55 EUR
7500+0.48 EUR
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
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ESDAVLC6-1BF4 ESDAVLC6-1BF4 STMicroelectronics dm00053258.pdf Description: TVS DIODE 3VWM 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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3000+0.39 EUR
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LET16045C LET16045C STMicroelectronics en.DM00038659.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
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LET16060C LET16060C STMicroelectronics en.DM00038953.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
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STF15N65M5 STF15N65M5 STMicroelectronics en.DM00049306.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
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STF18N65M5 STF18N65M5 STMicroelectronics en.DM00049722.pdf Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STF31N65M5 STF31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.25 EUR
10+6.79 EUR
50+5.32 EUR
100+4.84 EUR
500+4.01 EUR
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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 250 Stücke:
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2+12.86 EUR
10+8.65 EUR
50+6.84 EUR
100+6.26 EUR
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STF57N65M5 STF57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 278 Stücke:
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2+19.9 EUR
10+13.7 EUR
50+11.04 EUR
100+10.19 EUR
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STGFW30NC60V STGFW30NC60V STMicroelectronics STGFW30NC60V.pdf Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
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STGW60H65DF STGW60H65DF STMicroelectronics Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 STI11NM80 STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 STI57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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STP11NM65N STP11NM65N STMicroelectronics en.CD00158685.pdf Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
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STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.03 EUR
10+5.96 EUR
50+4.65 EUR
100+4.24 EUR
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STP34N65M5 STP34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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STP38N65M5 STP38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 889 Stücke:
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2+11.85 EUR
10+7.95 EUR
50+6.27 EUR
100+5.72 EUR
500+4.77 EUR
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STPS20M120SR STPS20M120SR STMicroelectronics en.DM00050162.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
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6+3.8 EUR
10+3.42 EUR
100+2.74 EUR
500+2.25 EUR
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STPS20SM120SR STPS20SM120SR STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
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STPS30M120SR STPS30M120SR STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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STPS30SM120SR STPS30SM120SR STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40M120CR STPS40M120CR STMicroelectronics en.DM00050153.pdf Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40SM120CR STPS40SM120CR STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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STPS40SM120CT STPS40SM120CT STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V TO220
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STW31N65M5 STW31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STW34N65M5 STW34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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STW38N65M5 STW38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
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STW57N65M5 STW57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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LBP01-0810B LBP01-0810B STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
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STB18N65M5 STB18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STB34N65M5 STB34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
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STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
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L78L05ABZ-TR L78L05ABZ-TR STMicroelectronics l78l.pdf Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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Q7096718 Q7096718 STMicroelectronics Description: KIT HIGH POWER MOSFET 12VALUES
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Q7096737 Q7096737 STMicroelectronics Description: KIT WIDE INPUT MOSFET 12VALUES
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STPS40M120CTN STPS40M120CTN STMicroelectronics en.DM00050153.pdf Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
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STPS30M120STN STPS30M120STN STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A TO220AB
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STPS30SM120STN STPS30SM120STN STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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SPBT2532C2.AT2 SPBT2532C2.AT2 STMicroelectronics SPBT2532C2.AT2_ds.pdf Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -85dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 2dBm
Data Rate: 2Mbps
Protocol: Bluetooth v2.1 +EDR, Class 2
Antenna Type: Antenna Not Included
Utilized IC / Part: STLC2500DB
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPBT2632C2A.AT2 SPBT2632C2A.AT2 STMicroelectronics wireless-transceivers-mcus-and-modules.html Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPBT2632C1A.AT2 SPBT2632C1A.AT2 STMicroelectronics wireless-connectivity.html Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STF11N65M5 STF11N65M5 STMicroelectronics en.DM00049307.pdf Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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5+5.21 EUR
10+3.37 EUR
50+2.57 EUR
100+2.31 EUR
500+1.86 EUR
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STL8DN6LF3 STL8DN6LF3 STMicroelectronics en.DM00039155.pdf Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+1.56 EUR
6000+1.46 EUR
9000+1.45 EUR
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STPSC6H065B-TR STPSC6H065B-TR STMicroelectronics en.DM00056349.pdf Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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2500+1.43 EUR
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STB38N65M5 en.DM00049157.pdf
STB38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Produkt ist nicht verfügbar
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+10.25 EUR
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STD18N65M5 stb18n65m5.pdf
STD18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 en.DM00024719.pdf
STD8NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STH130N10F3-2 STx%28x%29130N10F3%28-2%29.pdf
STH130N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
2500+0.55 EUR
7500+0.48 EUR
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
Produkt ist nicht verfügbar
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ESDAVLC6-1BF4 dm00053258.pdf
ESDAVLC6-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
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LET16045C en.DM00038659.pdf
LET16045C
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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LET16060C en.DM00038953.pdf
LET16060C
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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STF15N65M5 en.DM00049306.pdf
STF15N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
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STF18N65M5 en.DM00049722.pdf
STF18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STF31N65M5 en.DM00049148.pdf
STF31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 551 Stücke:
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AnzahlPrivatkunde
3+10.25 EUR
10+6.79 EUR
50+5.32 EUR
100+4.84 EUR
500+4.01 EUR
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STF38N65M5 en.DM00113621.pdf
STF38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 250 Stücke:
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2+12.86 EUR
10+8.65 EUR
50+6.84 EUR
100+6.26 EUR
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STF57N65M5 en.DM00049152.pdf
STF57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.9 EUR
10+13.7 EUR
50+11.04 EUR
100+10.19 EUR
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STGFW30NC60V STGFW30NC60V.pdf
STGFW30NC60V
Hersteller: STMicroelectronics
Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGW60H65DF
STGW60H65DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 en.CD00003205.pdf
STI11NM80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 en.DM00049152.pdf
STI57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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STP11NM65N en.CD00158685.pdf
STP11NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.03 EUR
10+5.96 EUR
50+4.65 EUR
100+4.24 EUR
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STP34N65M5 en.DM00049181.pdf
STP34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STP38N65M5 en.DM00049157.pdf
STP38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.85 EUR
10+7.95 EUR
50+6.27 EUR
100+5.72 EUR
500+4.77 EUR
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STPS20M120SR en.DM00050162.pdf
STPS20M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+3.42 EUR
100+2.74 EUR
500+2.25 EUR
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STPS20SM120SR en.DM00050163.pdf
STPS20SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.96 EUR
100+2.31 EUR
500+1.92 EUR
1000+1.51 EUR
Mindestbestellmenge: 7 Stücke
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STPS30M120SR power-schottky-medium-vf-and-ir.html
STPS30M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS30SM120SR en.DM00050160.pdf
STPS30SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS40M120CR en.DM00050153.pdf
STPS40M120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS40SM120CR en.DM00050154.pdf
STPS40SM120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+3.7 EUR
100+2.98 EUR
500+2.44 EUR
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STPS40SM120CT en.DM00050154.pdf
STPS40SM120CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V TO220
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
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STW31N65M5 en.DM00049148.pdf
STW31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34N65M5 en.DM00049181.pdf
STW34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5 en.DM00049157.pdf
STW38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.6 EUR
30+9.04 EUR
Mindestbestellmenge: 2 Stücke
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STW57N65M5 en.DM00049152.pdf
STW57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.57 EUR
30+13.49 EUR
60+12.41 EUR
120+11.51 EUR
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LBP01-0810B dm00051031.pdf
LBP01-0810B
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.65 EUR
36+0.58 EUR
100+0.51 EUR
250+0.48 EUR
500+0.45 EUR
1000+0.43 EUR
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STB18N65M5 stb18n65m5.pdf
STB18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.69 EUR
10+5.02 EUR
50+3.88 EUR
100+3.51 EUR
500+2.88 EUR
Mindestbestellmenge: 3 Stücke
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STB34N65M5 en.DM00049181.pdf
STB34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.91 EUR
10+9.37 EUR
50+7.41 EUR
100+6.78 EUR
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STB38N65M5 en.DM00049157.pdf
STB38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.84 EUR
10+9.34 EUR
50+7.41 EUR
100+6.79 EUR
500+6.49 EUR
Mindestbestellmenge: 2 Stücke
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 4792 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.15 EUR
10+16.02 EUR
50+12.96 EUR
100+12.54 EUR
500+11.83 EUR
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STD18N65M5 stb18n65m5.pdf
STD18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.54 EUR
10+4.93 EUR
50+3.8 EUR
100+3.44 EUR
500+2.81 EUR
Mindestbestellmenge: 3 Stücke
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 en.DM00024719.pdf
STD8NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.49 EUR
14+1.57 EUR
50+1.17 EUR
100+1.04 EUR
500+0.81 EUR
Mindestbestellmenge: 9 Stücke
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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10+2.15 EUR
16+1.34 EUR
50+0.99 EUR
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
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LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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24+0.88 EUR
34+0.62 EUR
38+0.56 EUR
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
Produkt ist nicht verfügbar
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L78L05ABZ-TR l78l.pdf
L78L05ABZ-TR
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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50+0.42 EUR
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Q7096718
Q7096718
Hersteller: STMicroelectronics
Description: KIT HIGH POWER MOSFET 12VALUES
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Q7096737
Q7096737
Hersteller: STMicroelectronics
Description: KIT WIDE INPUT MOSFET 12VALUES
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STPS40M120CTN en.DM00050153.pdf
STPS40M120CTN
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
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STPS30M120STN power-schottky-medium-vf-and-ir.html
STPS30M120STN
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
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STPS30SM120STN en.DM00050160.pdf
STPS30SM120STN
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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SPBT2532C2.AT2 SPBT2532C2.AT2_ds.pdf
SPBT2532C2.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -85dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 2dBm
Data Rate: 2Mbps
Protocol: Bluetooth v2.1 +EDR, Class 2
Antenna Type: Antenna Not Included
Utilized IC / Part: STLC2500DB
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPBT2632C2A.AT2 wireless-transceivers-mcus-and-modules.html
SPBT2632C2A.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPBT2632C1A.AT2 wireless-connectivity.html
SPBT2632C1A.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STF11N65M5 en.DM00049307.pdf
STF11N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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STL8DN6LF3 en.DM00039155.pdf
STL8DN6LF3
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+1.56 EUR
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STPSC6H065B-TR en.DM00056349.pdf
STPSC6H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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2500+1.43 EUR
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