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EVALKIT-VL6180X EVALKIT-VL6180X STMicroelectronics en.DM00123062.pdf Description: KIT EVAL STM32 F401 VL6180X
Packaging: Box
Interface: I2C
Sensor Type: Light, 3D Time-of-Flight (ToF)
Utilized IC / Part: STM32F401RE, VL6180X, mbed-Enabled Development
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Produkt ist nicht verfügbar
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ST25R3909-BQTT ST25R3909-BQTT STMicroelectronics en.DM00342686.pdf Description: IC RFID READER 13.56MHZ 32TQFN
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Standards: ISO 14443, NFC
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: RFID Reader
Interface: SPI
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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X-NUCLEO-NFC01A1 X-NUCLEO-NFC01A1 STMicroelectronics en.DM00121620.pdf Description: NUCLEO BOARD M24SR64-Y NFC
Packaging: Box
Function: Near Field Communication (NFC)
Type: RF
Contents: Board(s)
Utilized IC / Part: M24SR64-Y
Platform: Nucleo
Part Status: Active
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BALF-NRF01D3 BALF-NRF01D3 STMicroelectronics en.DM00109732.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 5UFBGA
Part Status: Active
Phase Difference: 5°
Return Loss (Min): -17.5dB
Insertion Loss (Max): 1.5dB
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Frequency Range: 2.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
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BALF-NRF01D3 BALF-NRF01D3 STMicroelectronics en.DM00109732.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 5UFBGA
Part Status: Active
Phase Difference: 5°
Return Loss (Min): -17.5dB
Insertion Loss (Max): 1.5dB
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Frequency Range: 2.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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A6986TR A6986TR STMicroelectronics en.DM00113498.pdf Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
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A6986TR A6986TR STMicroelectronics en.DM00113498.pdf Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
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BALF-NRG-01D3 BALF-NRG-01D3 STMicroelectronics en.DM00122278.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
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BALF-NRG-01D3 BALF-NRG-01D3 STMicroelectronics en.DM00122278.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
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STPA003CD-48X STPA003CD-48X STMicroelectronics en.DM00125748.pdf Description: IC AMP AB QUAD 85W 27FLEXIWATT
Features: Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Produkt ist nicht verfügbar
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ST25RU3980-BQFT ST25RU3980-BQFT STMicroelectronics 388536 Description: IC RFID READER 860-960MHZ 48QFN
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Standards: EPC, ISO 18000-6
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: RFID Reader
Interface: SPI
Frequency: 860MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LSM9DS1TR LSM9DS1TR STMicroelectronics LSM9DS1_Rev3_Mar2015.pdf Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MP23AB02BTR MP23AB02BTR STMicroelectronics MP23AB02B.pdf Description: MIC MEMS ANALOG OMNI -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 220 µA
Voltage Range: 1.6 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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STM32F334C4T6 STM32F334C4T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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STM32F334C6T6 STM32F334C6T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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STM32F334C8T6 STM32F334C8T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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STM32F334K4T6 STM32F334K4T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F334K6T6 STM32F334K6T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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STM32F334K8T6 STM32F334K8T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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STM32F334R6T6 STM32F334R6T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F334R8T6 STM32F334R8T6 STMicroelectronics en.DM00097745.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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160+6.39 EUR
320+6.18 EUR
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STM32091C-EVAL STM32091C-EVAL STMicroelectronics en.DM00129205.pdf Description: STM32 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Utilized IC / Part: STM32
Part Status: Obsolete
Produkt ist nicht verfügbar
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PM8841D PM8841D STMicroelectronics en.DM00141527.pdf Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
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PM8841D PM8841D STMicroelectronics en.DM00141527.pdf Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
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STAC250V2-500E STAC250V2-500E STMicroelectronics Description: TRANS RF 500W 250V STAC177B
Technology: MOSFET
Gain: 21.5dB
Power - Output: 3.5W
Configuration: N-Channel
Frequency: 27MHz
Package / Case: STAC177B
Packaging: Tray
Voltage - Test: 150 V
Voltage - Rated: 900 V
Supplier Device Package: STAC177B
Produkt ist nicht verfügbar
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SCT30N120 SCT30N120 STMicroelectronics sct30n120.pdf Description: SICFET N-CH 1200V 40A HIP247
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
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BAL-CC1101-01D3 BAL-CC1101-01D3 STMicroelectronics dm00102035.pdf Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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ECMF04-4HSWM10 ECMF04-4HSWM10 STMicroelectronics dm00109760.pdf Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
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ESDALC5-1BT2Y ESDALC5-1BT2Y STMicroelectronics en.DM00105626.pdf Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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2000+0.14 EUR
5000+0.12 EUR
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ESDALC8-1BF4 ESDALC8-1BF4 STMicroelectronics en.DM00091191.pdf Description: TVS DIODE 6VWM 16VC 0201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 165W
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: 0201
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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326+0.054 EUR
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ESDAULC5-1BF4 ESDAULC5-1BF4 STMicroelectronics dm00106526.pdf Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
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FERD20U50DJF-TR FERD20U50DJF-TR STMicroelectronics en.DM00109554.pdf Description: DIODE FERD 50V 20A POWERFLAT
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 20A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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FERD20U60DJF-TR FERD20U60DJF-TR STMicroelectronics en.DM00108944.pdf Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 20A
Produkt ist nicht verfügbar
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LCP22-150B1RL LCP22-150B1RL STMicroelectronics dm00104695.pdf Description: IC TELECOM INTERFACE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
auf Bestellung 415 Stücke:
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LD39200DPUR LD39200DPUR STMicroelectronics en.DM00102135.pdf Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
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STB10N95K5 STB10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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STB28N60M2 STB28N60M2 STMicroelectronics en.DM00095328.pdf Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1905 Stücke:
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STB33N60M2 STB33N60M2 STMicroelectronics en.DM00095324.pdf Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
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STB40N60M2 STB40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 741 Stücke:
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STB46N30M5 STB46N30M5 STMicroelectronics en.DM00111601.pdf Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
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STB6N80K5 STB6N80K5 STMicroelectronics en.DM00085379.pdf Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Produkt ist nicht verfügbar
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STD5N60M2 STD5N60M2 STMicroelectronics en.DM00096400.pdf Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
Produkt ist nicht verfügbar
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STD6N80K5 STD6N80K5 STMicroelectronics en.DM00085379.pdf Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 5268 Stücke:
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5+3.71 EUR
10+2.43 EUR
100+1.66 EUR
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STGB10H60DF STGB10H60DF STMicroelectronics en.DM00092752.pdf Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 4135 Stücke:
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STGB15H60DF STGB15H60DF STMicroelectronics en.DM00092755.pdf Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
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4+4.75 EUR
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STGB20V60F STGB20V60F STMicroelectronics en.DM00088672.pdf Description: IGBT 600V 40A 167W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB40V60F STGB40V60F STMicroelectronics en.DM00086251.pdf Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STH150N10F7-2 STH150N10F7-2 STMicroelectronics en.DM00106165.pdf Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+3.97 EUR
100+2.79 EUR
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STH80N10F7-2 STH80N10F7-2 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Produkt ist nicht verfügbar
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STL105NS3LLH7 STL105NS3LLH7 STMicroelectronics STL105NS3LLH7.pdf Description: MOSFET N-CH 30V 105A POWERFLAT
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STL13N60M2 STL13N60M2 STMicroelectronics en.DM00116759.pdf Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 451 Stücke:
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6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
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STL160NS3LLH7 STL160NS3LLH7 STMicroelectronics en.DM00087549.pdf Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL20DN10F7 STL20DN10F7 STMicroelectronics Description: MOSFET 2N-CH 100V 20A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 100V
Power - Max: 62.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL220N3LLH7 STL220N3LLH7 STMicroelectronics DM00086778.pdf Description: MOSFET N-CH 30V 220A POWERFLAT56
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STL33N60M2 STL33N60M2 STMicroelectronics en.DM00078624.pdf Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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STL34N65M5 STL34N65M5 STMicroelectronics en.DM00057661.pdf Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Produkt ist nicht verfügbar
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STL3N10F7 STL3N10F7 STMicroelectronics en.DM00108370.pdf Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
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100+0.71 EUR
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STL4N10F7 STL4N10F7 STMicroelectronics en.DM00069392.pdf Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
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STL4P2UH7 STL4P2UH7 STMicroelectronics DM00091043.pdf Description: MOSFET P-CH 20V 4A PWRFLAT2X2
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STL7N10F7 STL7N10F7 STMicroelectronics en.DM00108801.pdf Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
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EVALKIT-VL6180X en.DM00123062.pdf
EVALKIT-VL6180X
Hersteller: STMicroelectronics
Description: KIT EVAL STM32 F401 VL6180X
Packaging: Box
Interface: I2C
Sensor Type: Light, 3D Time-of-Flight (ToF)
Utilized IC / Part: STM32F401RE, VL6180X, mbed-Enabled Development
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Produkt ist nicht verfügbar
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ST25R3909-BQTT en.DM00342686.pdf
ST25R3909-BQTT
Hersteller: STMicroelectronics
Description: IC RFID READER 13.56MHZ 32TQFN
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Standards: ISO 14443, NFC
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: RFID Reader
Interface: SPI
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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3+7.36 EUR
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25+6.02 EUR
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X-NUCLEO-NFC01A1 en.DM00121620.pdf
X-NUCLEO-NFC01A1
Hersteller: STMicroelectronics
Description: NUCLEO BOARD M24SR64-Y NFC
Packaging: Box
Function: Near Field Communication (NFC)
Type: RF
Contents: Board(s)
Utilized IC / Part: M24SR64-Y
Platform: Nucleo
Part Status: Active
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2+15 EUR
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BALF-NRF01D3 en.DM00109732.pdf
BALF-NRF01D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 5UFBGA
Part Status: Active
Phase Difference: 5°
Return Loss (Min): -17.5dB
Insertion Loss (Max): 1.5dB
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Frequency Range: 2.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
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BALF-NRF01D3 en.DM00109732.pdf
BALF-NRF01D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 5UFBGA
Part Status: Active
Phase Difference: 5°
Return Loss (Min): -17.5dB
Insertion Loss (Max): 1.5dB
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Frequency Range: 2.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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A6986TR en.DM00113498.pdf
A6986TR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
Produkt ist nicht verfügbar
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A6986TR en.DM00113498.pdf
A6986TR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
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BALF-NRG-01D3 en.DM00122278.pdf
BALF-NRG-01D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
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5000+0.27 EUR
10000+0.26 EUR
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BALF-NRG-01D3 en.DM00122278.pdf
BALF-NRG-01D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
auf Bestellung 34772 Stücke:
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20+0.89 EUR
30+0.59 EUR
50+0.53 EUR
100+0.48 EUR
250+0.43 EUR
1000+0.31 EUR
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STPA003CD-48X en.DM00125748.pdf
STPA003CD-48X
Hersteller: STMicroelectronics
Description: IC AMP AB QUAD 85W 27FLEXIWATT
Features: Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Produkt ist nicht verfügbar
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ST25RU3980-BQFT 388536
ST25RU3980-BQFT
Hersteller: STMicroelectronics
Description: IC RFID READER 860-960MHZ 48QFN
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Standards: EPC, ISO 18000-6
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: RFID Reader
Interface: SPI
Frequency: 860MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LSM9DS1TR LSM9DS1_Rev3_Mar2015.pdf
LSM9DS1TR
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MP23AB02BTR MP23AB02B.pdf
MP23AB02BTR
Hersteller: STMicroelectronics
Description: MIC MEMS ANALOG OMNI -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 220 µA
Voltage Range: 1.6 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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STM32F334C4T6 en.DM00097745.pdf
STM32F334C4T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1011 Stücke:
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Anzahl Preis
2+8.82 EUR
10+6.75 EUR
25+6.23 EUR
100+5.67 EUR
250+5.4 EUR
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STM32F334C6T6 en.DM00097745.pdf
STM32F334C6T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1060 Stücke:
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Anzahl Preis
2+9.35 EUR
10+7.17 EUR
25+6.63 EUR
100+6.03 EUR
250+5.74 EUR
500+5.57 EUR
1000+5.43 EUR
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STM32F334C8T6 en.DM00097745.pdf
STM32F334C8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 16835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.86 EUR
10+7.57 EUR
25+7 EUR
100+6.37 EUR
250+6.07 EUR
500+5.89 EUR
1000+5.74 EUR
2500+5.58 EUR
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STM32F334K4T6 en.DM00097745.pdf
STM32F334K4T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F334K6T6 en.DM00097745.pdf
STM32F334K6T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 1423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
10+5.76 EUR
25+5.32 EUR
100+4.84 EUR
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STM32F334K8T6 en.DM00097745.pdf
STM32F334K8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 61 Stücke:
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Anzahl Preis
2+9.42 EUR
10+7.22 EUR
25+6.67 EUR
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STM32F334R6T6 en.DM00097745.pdf
STM32F334R6T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F334R8T6 en.DM00097745.pdf
STM32F334R8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.1 EUR
10+7.78 EUR
25+7.19 EUR
160+6.39 EUR
320+6.18 EUR
640+6.01 EUR
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STM32091C-EVAL en.DM00129205.pdf
STM32091C-EVAL
Hersteller: STMicroelectronics
Description: STM32 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Utilized IC / Part: STM32
Part Status: Obsolete
Produkt ist nicht verfügbar
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PM8841D en.DM00141527.pdf
PM8841D
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PM8841D en.DM00141527.pdf
PM8841D
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
20+0.89 EUR
25+0.8 EUR
100+0.71 EUR
250+0.66 EUR
500+0.63 EUR
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STAC250V2-500E
STAC250V2-500E
Hersteller: STMicroelectronics
Description: TRANS RF 500W 250V STAC177B
Technology: MOSFET
Gain: 21.5dB
Power - Output: 3.5W
Configuration: N-Channel
Frequency: 27MHz
Package / Case: STAC177B
Packaging: Tray
Voltage - Test: 150 V
Voltage - Rated: 900 V
Supplier Device Package: STAC177B
Produkt ist nicht verfügbar
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SCT30N120 sct30n120.pdf
SCT30N120
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.62 EUR
30+22 EUR
120+20.26 EUR
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BAL-CC1101-01D3 dm00102035.pdf
BAL-CC1101-01D3
Hersteller: STMicroelectronics
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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ECMF04-4HSWM10 dm00109760.pdf
ECMF04-4HSWM10
Hersteller: STMicroelectronics
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
auf Bestellung 18734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.89 EUR
25+0.82 EUR
50+0.77 EUR
100+0.73 EUR
250+0.67 EUR
500+0.63 EUR
1000+0.6 EUR
Mindestbestellmenge: 17
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ESDALC5-1BT2Y en.DM00105626.pdf
ESDALC5-1BT2Y
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 28
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ESDALC8-1BF4 en.DM00091191.pdf
ESDALC8-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 6VWM 16VC 0201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 165W
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: 0201
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 7773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
162+0.11 EUR
326+0.054 EUR
500+0.051 EUR
1000+0.042 EUR
2000+0.041 EUR
5000+0.04 EUR
Mindestbestellmenge: 112
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ESDAULC5-1BF4 dm00106526.pdf
ESDAULC5-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
auf Bestellung 26468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
63+0.28 EUR
101+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.089 EUR
Mindestbestellmenge: 39
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FERD20U50DJF-TR en.DM00109554.pdf
FERD20U50DJF-TR
Hersteller: STMicroelectronics
Description: DIODE FERD 50V 20A POWERFLAT
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 20A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
14+1.35 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 11
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FERD20U60DJF-TR en.DM00108944.pdf
FERD20U60DJF-TR
Hersteller: STMicroelectronics
Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 20A
Produkt ist nicht verfügbar
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LCP22-150B1RL dm00104695.pdf
LCP22-150B1RL
Hersteller: STMicroelectronics
Description: IC TELECOM INTERFACE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.21 EUR
100+2.22 EUR
Mindestbestellmenge: 4
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LD39200DPUR en.DM00102135.pdf
LD39200DPUR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.16 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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STB10N95K5 en.DM00088506.pdf
STB10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.42 EUR
10+4.24 EUR
100+2.99 EUR
500+2.72 EUR
Mindestbestellmenge: 3
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STB28N60M2 en.DM00095328.pdf
STB28N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.7 EUR
100+1.85 EUR
500+1.49 EUR
Mindestbestellmenge: 5
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STB33N60M2 en.DM00095324.pdf
STB33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+5.07 EUR
100+3.6 EUR
500+3.16 EUR
Mindestbestellmenge: 3
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STB40N60M2 en.DM00089185.pdf
STB40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
10+6.31 EUR
100+4.54 EUR
500+4.18 EUR
Mindestbestellmenge: 2
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STB46N30M5 en.DM00111601.pdf
STB46N30M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.08 EUR
10+10.34 EUR
100+7.79 EUR
Mindestbestellmenge: 2
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STB6N80K5 en.DM00085379.pdf
STB6N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Produkt ist nicht verfügbar
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STD5N60M2 en.DM00096400.pdf
STD5N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
Produkt ist nicht verfügbar
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STD6N80K5 en.DM00085379.pdf
STD6N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 5268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.43 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
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STGB10H60DF en.DM00092752.pdf
STGB10H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 4135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.38 EUR
100+1.62 EUR
500+1.3 EUR
Mindestbestellmenge: 5
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STGB15H60DF en.DM00092755.pdf
STGB15H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.09 EUR
Mindestbestellmenge: 4
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STGB20V60F en.DM00088672.pdf
STGB20V60F
Hersteller: STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB40V60F en.DM00086251.pdf
STGB40V60F
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STH150N10F7-2 en.DM00106165.pdf
STH150N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+3.97 EUR
100+2.79 EUR
500+2.52 EUR
Mindestbestellmenge: 3
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STH80N10F7-2 en.DM00106219.pdf
STH80N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
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STL105NS3LLH7 STL105NS3LLH7.pdf
STL105NS3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 105A POWERFLAT
Produkt ist nicht verfügbar
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STL13N60M2 en.DM00116759.pdf
STL13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
Mindestbestellmenge: 6
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STL160NS3LLH7 en.DM00087549.pdf
STL160NS3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL20DN10F7
STL20DN10F7
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 100V
Power - Max: 62.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL220N3LLH7 DM00086778.pdf
STL220N3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 220A POWERFLAT56
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
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STL33N60M2 en.DM00078624.pdf
STL33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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STL34N65M5 en.DM00057661.pdf
STL34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
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STL3N10F7 en.DM00108370.pdf
STL3N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.02 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.5 EUR
Mindestbestellmenge: 16
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STL4N10F7 en.DM00069392.pdf
STL4N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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STL4P2UH7 DM00091043.pdf
STL4P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 4A PWRFLAT2X2
Produkt ist nicht verfügbar
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STL7N10F7 en.DM00108801.pdf
STL7N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
auf Bestellung 6551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
14+1.35 EUR
100+1.05 EUR
500+0.89 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
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