Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (166902) > Seite 419 nach 2782
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STM8AL3188TCY | STMicroelectronics |
 Description: IC MCU 8BIT 64KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: STM8 Data Converters: A/D 25x12b; D/A 2x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Grade: Automotive Part Status: Not For New Designs Number of I/O: 41 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 2305 Stücke: Lieferzeit 10-14 Tag (e) |
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STM8AL318ATCY | STMicroelectronics |
Description: IC MCU 8BIT 64KB FLASH 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: STM8 Data Converters: A/D 28x12b; D/A 2x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 80-LQFP (14x14) Part Status: Not For New Designs Number of I/O: 68 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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STTH2R02AFY | STMicroelectronics |
Description: DIODE GP 200V 2A SOD128FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SOD128Flat Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A Current - Reverse Leakage @ Vr: 800 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5539 Stücke: Lieferzeit 10-14 Tag (e) |
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STTH2R02AFY | STMicroelectronics |
Description: DIODE GP 200V 2A SOD128FLAT Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SOD128Flat Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A Current - Reverse Leakage @ Vr: 800 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5539 Stücke: Lieferzeit 10-14 Tag (e) |
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STTH3R02AFY | STMicroelectronics |
Description: DIODE GP 200V 3A SOD128FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SOD128Flat Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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STTH3R02AFY | STMicroelectronics |
Description: DIODE GP 200V 3A SOD128FLAT Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SOD128Flat Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10254 Stücke: Lieferzeit 10-14 Tag (e) |
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SPC5-UDEDEBG | STMicroelectronics |
Description: UDE STARTER KIT LICENCE UNLIMITD |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPC5-UDESTK-PLUS | STMicroelectronics |
Description: LICENSE FULL PERPETUAL SPC5 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SPV1050TTR | STMicroelectronics |
Description: IC BATT CHG MULTI-CHEM 20VFQFPN Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 20-VFQFPN (3x3) Charge Current - Max: 70mA Voltage - Supply (Max): 18V Battery Pack Voltage: 5.3V (Max) Current - Charging: Constant - Programmable Part Status: Active |
auf Bestellung 10884 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-IDS002V1 | STMicroelectronics |
Description: BOARD EVAL WIRELESS PV SPV1050 Packaging: Box For Use With/Related Products: SPV1050 Type: Transmitter, Receiver Supplied Contents: Board(s) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STM32469I-EVAL | STMicroelectronics |
Description: STM32F469 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F469 Part Status: Obsolete |
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STM32479I-EVAL | STMicroelectronics |
Description: STM32F479 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F479 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STM3274G-SK/IAR | STMicroelectronics |
Description: IAR KICKSTART STM32F746/32F756 Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M7 Board Type: Evaluation Platform Utilized IC / Part: STM32F746, STM32F756 Platform: IAR KickStart Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STM32F469I-DISCO | STMicroelectronics |
Description: DISCOVERY STM32F469 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F469 Platform: Discovery Part Status: Active |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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STM32L073Z-EVAL | STMicroelectronics |
Description: STM32L073VZ EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M0+ Board Type: Evaluation Platform Utilized IC / Part: STM32L073VZ Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-ISV020V1 | STMicroelectronics |
Description: BOARD ENERGY HARVST BATT SPV1050 Packaging: Box Function: Energy Harvesting Type: Power Management Utilized IC / Part: SPV1050 Supplied Contents: Board(s) Primary Attributes: Solar Powered Part Status: Active |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-ISV021V1 | STMicroelectronics |
Description: BOARD ENERGY HARVEST SPV1050 Packaging: Box Function: Energy Harvesting Type: Power Management Utilized IC / Part: SPV1050 Supplied Contents: Board(s) Part Status: Active |
Produkt ist nicht verfügbar |
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VN7040ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO Features: Auto Restart, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 24A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
auf Bestellung 4197 Stücke: Lieferzeit 10-14 Tag (e) |
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VN7050ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO Features: Auto Restart, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 21A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
auf Bestellung 16293 Stücke: Lieferzeit 10-14 Tag (e) |
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VN7140ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO Features: Auto Restart, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO |
auf Bestellung 45808 Stücke: Lieferzeit 10-14 Tag (e) |
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VNQ7140AJTR | STMicroelectronics |
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16 Features: Auto Restart, Status Flag Packaging: Cut Tape (CT) Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PowerSSO-16 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO |
auf Bestellung 14777 Stücke: Lieferzeit 10-14 Tag (e) |
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LSM6DS33TR | STMicroelectronics |
Description: IMU ACCEL/GYRO I2C/SPI 16LGA Packaging: Tape & Reel (TR) Package / Case: 16-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis Supplier Device Package: 16-LGA (3x3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LIS2DE12TR | STMicroelectronics |
Description: ACCEL 2-16G I2C/SPI 12LGA Packaging: Tape & Reel (TR) Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g, 16g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 0.5Hz ~ 2.69kHz Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g) Part Status: Active |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSX712IYST | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8MINISO Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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LSM6DS33TR | STMicroelectronics |
Description: IMU ACCEL/GYRO I2C/SPI 16LGA Packaging: Cut Tape (CT) Package / Case: 16-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis Supplier Device Package: 16-LGA (3x3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LIS2DE12TR | STMicroelectronics |
Description: ACCEL 2-16G I2C/SPI 12LGA Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor Packaging: Cut Tape (CT) Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g, 16g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 0.5Hz ~ 2.69kHz Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g) Part Status: Active |
auf Bestellung 50745 Stücke: Lieferzeit 10-14 Tag (e) |
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TSX712IYST | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8MINISO Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 3890 Stücke: Lieferzeit 10-14 Tag (e) |
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TSV991AIQ1T | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 820µA Slew Rate: 10V/µs Gain Bandwidth Product: 20 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1.5 mV Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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TS556IDTTR | STMicroelectronics |
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 2.7MHz Type: 555 Type, Timer/Oscillator (Dual) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 16V Supplier Device Package: 14-SO Part Status: Active Current - Supply: 130 µA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSV991AIQ1T | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 820µA Slew Rate: 10V/µs Gain Bandwidth Product: 20 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1.5 mV Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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TS556IDTTR | STMicroelectronics |
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 2.7MHz Type: 555 Type, Timer/Oscillator (Dual) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 16V Supplier Device Package: 14-SO Part Status: Active Current - Supply: 130 µA |
auf Bestellung 10915 Stücke: Lieferzeit 10-14 Tag (e) |
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X-NUCLEO-PLC01A1 | STMicroelectronics |
Description: NUCLEO BOARD PLC GPIO Packaging: Box Function: GPIO Type: Interface Contents: Board(s) Utilized IC / Part: CLT01-38SQ7, VNI8200XP Platform: Nucleo Part Status: Active |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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STD110N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
auf Bestellung 2384 Stücke: Lieferzeit 10-14 Tag (e) |
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STD36P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 36A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 7353 Stücke: Lieferzeit 10-14 Tag (e) |
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STD4NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 2.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7325 Stücke: Lieferzeit 10-14 Tag (e) |
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STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
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STGB7H60DF | STMicroelectronics |
Description: IGBT 600V 14A 88W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
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STL23NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
Produkt ist nicht verfügbar |
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STL8P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 4861 Stücke: Lieferzeit 10-14 Tag (e) |
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STS7P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 7A POWER8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 6413 Stücke: Lieferzeit 10-14 Tag (e) |
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STD110N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
Produkt ist nicht verfügbar |
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STD36P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 36A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD4NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 2.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
Produkt ist nicht verfügbar |
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STGB7H60DF | STMicroelectronics |
Description: IGBT 600V 14A 88W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
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STL110NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V |
Produkt ist nicht verfügbar |
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STL23NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
Produkt ist nicht verfügbar |
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STL7N6LF3 | STMicroelectronics |
Description: MOSFET N-CH 60V 20A POWERFLAT |
Produkt ist nicht verfügbar |
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STL8P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STS7P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 7A POWER8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD12N60M2 | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
auf Bestellung 7451 Stücke: Lieferzeit 10-14 Tag (e) |
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STH170N8F7-2 | STMicroelectronics |
Description: MOSFET N-CH 80V 120A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V |
auf Bestellung 1264 Stücke: Lieferzeit 10-14 Tag (e) |
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STL12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL16N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 8A POWERFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V |
auf Bestellung 2422 Stücke: Lieferzeit 10-14 Tag (e) |
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STL86N3LLH6AG | STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STD12N60M2 | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STL12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6.5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL86N3LLH6AG | STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FERD20M60SR | STMicroelectronics |
Description: DIODE FERD 60V 20A I2PAK Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A Current - Reverse Leakage @ Vr: 230 µA @ 60 V |
Produkt ist nicht verfügbar |
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FERD40U50CFP | STMicroelectronics |
Description: DIODE ARR FERD 50V 20A TO220FPAB Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: FERD (Field Effect Rectifier Diode) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220FPAB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 50 V |
auf Bestellung 1424 Stücke: Lieferzeit 10-14 Tag (e) |
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| STM8AL3188TCY |
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Hersteller: STMicroelectronics
Description: IC MCU 8BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: STM8
Data Converters: A/D 25x12b; D/A 2x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Grade: Automotive
Part Status: Not For New Designs
Number of I/O: 41
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 8BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: STM8
Data Converters: A/D 25x12b; D/A 2x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Grade: Automotive
Part Status: Not For New Designs
Number of I/O: 41
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2305 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.36 EUR |
| 10+ | 6.62 EUR |
| 25+ | 6.26 EUR |
| 80+ | 5.42 EUR |
| 250+ | 5.14 EUR |
| 500+ | 4.62 EUR |
| 1000+ | 3.89 EUR |
| STM8AL318ATCY |
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Hersteller: STMicroelectronics
Description: IC MCU 8BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: STM8
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 68
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 8BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: STM8
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 68
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.75 EUR |
| 10+ | 8.76 EUR |
| 25+ | 8.28 EUR |
| 90+ | 7.17 EUR |
| 270+ | 6.81 EUR |
| 450+ | 6.11 EUR |
| 990+ | 5.15 EUR |
| STTH2R02AFY |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 2A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5539 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| STTH2R02AFY |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 2A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5539 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 0.67 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| STTH3R02AFY |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 3A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 3A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| STTH3R02AFY |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 3A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 3A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10254 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 0.67 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| SPC5-UDEDEBG |
|
Hersteller: STMicroelectronics
Description: UDE STARTER KIT LICENCE UNLIMITD
Description: UDE STARTER KIT LICENCE UNLIMITD
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| SPC5-UDESTK-PLUS |
|
Hersteller: STMicroelectronics
Description: LICENSE FULL PERPETUAL SPC5
Description: LICENSE FULL PERPETUAL SPC5
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| SPV1050TTR |
|
Hersteller: STMicroelectronics
Description: IC BATT CHG MULTI-CHEM 20VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-VFQFPN (3x3)
Charge Current - Max: 70mA
Voltage - Supply (Max): 18V
Battery Pack Voltage: 5.3V (Max)
Current - Charging: Constant - Programmable
Part Status: Active
Description: IC BATT CHG MULTI-CHEM 20VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-VFQFPN (3x3)
Charge Current - Max: 70mA
Voltage - Supply (Max): 18V
Battery Pack Voltage: 5.3V (Max)
Current - Charging: Constant - Programmable
Part Status: Active
auf Bestellung 10884 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.32 EUR |
| 10+ | 5.68 EUR |
| 25+ | 5.37 EUR |
| 100+ | 4.65 EUR |
| 250+ | 4.41 EUR |
| 500+ | 3.96 EUR |
| 1000+ | 3.34 EUR |
| STEVAL-IDS002V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL WIRELESS PV SPV1050
Packaging: Box
For Use With/Related Products: SPV1050
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVAL WIRELESS PV SPV1050
Packaging: Box
For Use With/Related Products: SPV1050
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32469I-EVAL |
|
Hersteller: STMicroelectronics
Description: STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Part Status: Obsolete
Description: STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32479I-EVAL |
|
Hersteller: STMicroelectronics
Description: STM32F479 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F479
Part Status: Obsolete
Description: STM32F479 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F479
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM3274G-SK/IAR |
Hersteller: STMicroelectronics
Description: IAR KICKSTART STM32F746/32F756
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F746, STM32F756
Platform: IAR KickStart
Part Status: Obsolete
Description: IAR KICKSTART STM32F746/32F756
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F746, STM32F756
Platform: IAR KickStart
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32F469I-DISCO |
|
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 98.81 EUR |
| STM32L073Z-EVAL |
|
Hersteller: STMicroelectronics
Description: STM32L073VZ EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M0+
Board Type: Evaluation Platform
Utilized IC / Part: STM32L073VZ
Part Status: Active
Description: STM32L073VZ EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M0+
Board Type: Evaluation Platform
Utilized IC / Part: STM32L073VZ
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 379.37 EUR |
| STEVAL-ISV020V1 |
|
Hersteller: STMicroelectronics
Description: BOARD ENERGY HARVST BATT SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Primary Attributes: Solar Powered
Part Status: Active
Description: BOARD ENERGY HARVST BATT SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Primary Attributes: Solar Powered
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 64.19 EUR |
| STEVAL-ISV021V1 |
|
Hersteller: STMicroelectronics
Description: BOARD ENERGY HARVEST SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD ENERGY HARVEST SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
| VN7040ASTR |
|
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 4197 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 2.37 EUR |
| 25+ | 2.23 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.79 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.3 EUR |
| VN7050ASTR |
|
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 16293 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.75 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.32 EUR |
| 100+ | 1.98 EUR |
| 250+ | 1.86 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.35 EUR |
| VN7140ASTR |
|
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
auf Bestellung 45808 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 2.27 EUR |
| 25+ | 2.14 EUR |
| 100+ | 1.82 EUR |
| 250+ | 1.71 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.24 EUR |
| VNQ7140AJTR |
|
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
auf Bestellung 14777 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 3.86 EUR |
| 25+ | 3.65 EUR |
| 100+ | 3.17 EUR |
| 250+ | 3 EUR |
| 500+ | 2.7 EUR |
| 1000+ | 2.27 EUR |
| LSM6DS33TR |
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
| LIS2DE12TR |
|
Hersteller: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 1.1 EUR |
| TSX712IYST |
|
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| LSM6DS33TR |
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Cut Tape (CT)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Cut Tape (CT)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
| LIS2DE12TR |
|
Hersteller: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Packaging: Cut Tape (CT)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Description: ACCEL 2-16G I2C/SPI 12LGA
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Packaging: Cut Tape (CT)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
auf Bestellung 50745 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.87 EUR |
| 8+ | 2.41 EUR |
| 10+ | 2.24 EUR |
| 25+ | 2.03 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.37 EUR |
| TSX712IYST |
|
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 4.15 EUR |
| 25+ | 3.93 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.23 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.44 EUR |
| TSV991AIQ1T |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
| TS556IDTTR |
|
Hersteller: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.16 EUR |
| TSV991AIQ1T |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.81 EUR |
| 11+ | 1.62 EUR |
| 25+ | 1.53 EUR |
| 100+ | 1.26 EUR |
| 250+ | 1.18 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.82 EUR |
| TS556IDTTR |
|
Hersteller: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
auf Bestellung 10915 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.94 EUR |
| 11+ | 1.75 EUR |
| 25+ | 1.65 EUR |
| 100+ | 1.4 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.16 EUR |
| X-NUCLEO-PLC01A1 |
|
Hersteller: STMicroelectronics
Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.46 EUR |
| STD110N8F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.62 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.25 EUR |
| STD36P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 7353 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.06 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.91 EUR |
| STD4NK100Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7325 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.91 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.58 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 1.85 EUR |
| STD9HN65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
| STGB7H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 88W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Description: IGBT 600V 14A 88W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Produkt ist nicht verfügbar
| STL23NS3LLH7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
| STL8P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 4861 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.74 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.77 EUR |
| STS7P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 6413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.9 EUR |
| 12+ | 1.55 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.83 EUR |
| STD110N8F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Produkt ist nicht verfügbar
| STD36P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.78 EUR |
| STD4NK100Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.76 EUR |
| 5000+ | 1.69 EUR |
| STD9HN65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
| STGB7H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 88W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Description: IGBT 600V 14A 88W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Produkt ist nicht verfügbar
| STL110NS3LLH7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Description: MOSFET N-CH 30V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Produkt ist nicht verfügbar
| STL23NS3LLH7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
| STL7N6LF3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 20A POWERFLAT
Description: MOSFET N-CH 60V 20A POWERFLAT
Produkt ist nicht verfügbar
| STL8P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.72 EUR |
| STS7P4LLF6 |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.78 EUR |
| 5000+ | 0.75 EUR |
| STD12N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.45 EUR |
| 10+ | 2 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.08 EUR |
| STH170N8F7-2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.02 EUR |
| 10+ | 4.51 EUR |
| 25+ | 4.26 EUR |
| 100+ | 3.69 EUR |
| 250+ | 3.5 EUR |
| 500+ | 3.14 EUR |
| STL12N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
| STL16N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
auf Bestellung 2422 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.47 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.77 EUR |
| STL86N3LLH6AG |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| STD12N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.01 EUR |
| STL12N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
| STL86N3LLH6AG |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| FERD20M60SR |
|
Hersteller: STMicroelectronics
Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
Produkt ist nicht verfügbar
| FERD40U50CFP |
|
Hersteller: STMicroelectronics
Description: DIODE ARR FERD 50V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Description: DIODE ARR FERD 50V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.09 EUR |
| 50+ | 1.68 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.25 EUR |