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L6703TR STMicroelectronics Description: IC CONTROLLER SGL PHASE
Produkt ist nicht verfügbar
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STIEC45-24ACS STIEC45-24ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 24VWM 42VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-26ACS STIEC45-26ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 26VWM 45VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-28ACS STIEC45-28ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 28VWM 49VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
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STD46N6F7 STD46N6F7 STMicroelectronics en.DM00227324.pdf Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
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STGB30V60F STGB30V60F STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STGB5H60DF STGB5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
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STGD5H60DF STGD5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
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STL50DN6F7 STL50DN6F7 STMicroelectronics en.DM00216100.pdf Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
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STD7LN80K5 STD7LN80K5 STMicroelectronics en.DM00256349.pdf Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STL7LN80K5 STL7LN80K5 STMicroelectronics en.DM00261218.pdf Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STL11N6F7 STL11N6F7 STMicroelectronics en.DM00216237.pdf Description: MOSFET N-CH 60V 11A POWERFLAT
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STL100N8F7 STL100N8F7 STMicroelectronics en.DM00140134.pdf Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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STL8DN6LF6AG STL8DN6LF6AG STMicroelectronics en.DM00208902.pdf Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
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STL8N6LF6AG STL8N6LF6AG STMicroelectronics en.DM00213144.pdf Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
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STB80N4F6AG STB80N4F6AG STMicroelectronics en.DM00206725.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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STGB15M65DF2 STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
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STGB30H60DLFB STGB30H60DLFB STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STH290N4F6-2AG STH290N4F6-2AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
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STH290N4F6-6AG STH290N4F6-6AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-6
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STL120N4LF6AG STL120N4LF6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Qualification: AEC-Q101
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STD19N3LLH6AG STD19N3LLH6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
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STD85N10F7AG STD85N10F7AG STMicroelectronics en.DM00136911.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
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STGB30H60DFB STGB30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STHVDAC-256MTGF3 STHVDAC-256MTGF3 STMicroelectronics en.DM00229754.pdf Description: IC DAC 7BIT 20FLIPCHIP
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STPTIC-27L2C5 STPTIC-27L2C5 STMicroelectronics Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
Produkt ist nicht verfügbar
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Z0402MF0AA2 Z0402MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405NF0AA2 Z0405NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0409NF0AA2 Z0409NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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Z0410MF0AA2 Z0410MF0AA2 STMicroelectronics z04.pdf Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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Z0405MF0AA2 Z0405MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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STGF15M65DF2 STGF15M65DF2 STMicroelectronics en.DM00237960.pdf Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
auf Bestellung 1952 Stücke:
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12+1.58 EUR
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500+1.06 EUR
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STGF5H60DF STGF5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
Produkt ist nicht verfügbar
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STGP15M65DF2 STGP15M65DF2 STMicroelectronics en.DM00237971.pdf Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Produkt ist nicht verfügbar
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STGP30H60DFB STGP30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 249 Stücke:
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STGP5H60DF STGP5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
auf Bestellung 1944 Stücke:
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STGW30M65DF2 STGW30M65DF2 STMicroelectronics en.DM00177695.pdf Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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3+6.86 EUR
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STP110N8F7 STP110N8F7 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Produkt ist nicht verfügbar
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STP27N60M2-EP STP27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Produkt ist nicht verfügbar
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STW27N60M2-EP STW27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
auf Bestellung 598 Stücke:
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STF7LN80K5 STF7LN80K5 STMicroelectronics en.DM00256224.pdf Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 3128 Stücke:
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5+4.08 EUR
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STF9N80K5 STF9N80K5 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Produkt ist nicht verfügbar
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STFI7LN80K5 STFI7LN80K5 STMicroelectronics en.DM00256619.pdf Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STFI9N80K5 STFI9N80K5 STMicroelectronics STF%28I%299N80K5.pdf Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Produkt ist nicht verfügbar
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STP7LN80K5 STP7LN80K5 STMicroelectronics en.DM00260911.pdf Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 452 Stücke:
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5+4.28 EUR
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STU7LN80K5 STU7LN80K5 STMicroelectronics en.DM00261198.pdf Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 3000 Stücke:
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4+4.59 EUR
75+2.14 EUR
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525+1.64 EUR
1050+1.52 EUR
2025+1.42 EUR
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STF10LN80K5 STF10LN80K5 STMicroelectronics en.DM00176897.pdf Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
auf Bestellung 799 Stücke:
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STP10LN80K5 STP10LN80K5 STMicroelectronics en.DM00176858.pdf Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Produkt ist nicht verfügbar
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STGIF7CH60TS-L STGIF7CH60TS-L STMicroelectronics en.DM00122690.pdf Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
auf Bestellung 119 Stücke:
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2+17.41 EUR
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STWA48N60M2 STWA48N60M2 STMicroelectronics en.DM00250450.pdf Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
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STF26N60M2 STF26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.17 EUR
50+2.56 EUR
100+2.37 EUR
500+1.92 EUR
Mindestbestellmenge: 4
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STFI26N60M2 STFI26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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STIEC45-24ACS STIEC45-24ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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STIEC45-26ACS STIEC45-26ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STIEC45-28ACS STIEC45-28ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STD46N6F7 STD46N6F7 STMicroelectronics en.DM00227324.pdf Description: MOSFET N-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
Produkt ist nicht verfügbar
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STGB5H60DF STGB5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Produkt ist nicht verfügbar
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STGD5H60DF STGD5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
auf Bestellung 3906 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
14+1.35 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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STL50DN6F7 STL50DN6F7 STMicroelectronics en.DM00216100.pdf Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6104 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+2.08 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.08 EUR
Mindestbestellmenge: 7
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STD7LN80K5 STD7LN80K5 STMicroelectronics en.DM00256349.pdf Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 2443 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.34 EUR
10+2.66 EUR
100+1.83 EUR
500+1.49 EUR
Mindestbestellmenge: 6
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L6703TR
Hersteller: STMicroelectronics
Description: IC CONTROLLER SGL PHASE
Produkt ist nicht verfügbar
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STIEC45-24ACS en.CD00258714.pdf
STIEC45-24ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STIEC45-26ACS en.CD00258714.pdf
STIEC45-26ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STIEC45-28ACS en.CD00258714.pdf
STIEC45-28ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STD46N6F7 en.DM00227324.pdf
STD46N6F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
Produkt ist nicht verfügbar
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STGB30V60F
STGB30V60F
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGB5H60DF en.DM00149621.pdf
STGB5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Produkt ist nicht verfügbar
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STGD5H60DF en.DM00149621.pdf
STGD5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
Mindestbestellmenge: 2500
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STL50DN6F7 en.DM00216100.pdf
STL50DN6F7
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.92 EUR
6000+0.88 EUR
Mindestbestellmenge: 3000
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STD7LN80K5 en.DM00256349.pdf
STD7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STL7LN80K5 en.DM00261218.pdf
STL7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STL11N6F7 en.DM00216237.pdf
STL11N6F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 11A POWERFLAT
Produkt ist nicht verfügbar
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STL100N8F7 en.DM00140134.pdf
STL100N8F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Produkt ist nicht verfügbar
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STL8DN6LF6AG en.DM00208902.pdf
STL8DN6LF6AG
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.77 EUR
Mindestbestellmenge: 3000
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STL8N6LF6AG en.DM00213144.pdf
STL8N6LF6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.86 EUR
Mindestbestellmenge: 3000
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STB80N4F6AG en.DM00206725.pdf
STB80N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STGB15M65DF2 en.DM00096991.pdf
STGB15M65DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.16 EUR
2000+1.11 EUR
Mindestbestellmenge: 1000
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STGB30H60DLFB
STGB30H60DLFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STH290N4F6-2AG en.DM00206158.pdf
STH290N4F6-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Produkt ist nicht verfügbar
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STH290N4F6-6AG en.DM00206158.pdf
STH290N4F6-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
Produkt ist nicht verfügbar
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STL120N4LF6AG en.DM00064632.pdf
STL120N4LF6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD19N3LLH6AG en.DM00064632.pdf
STD19N3LLH6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD85N10F7AG en.DM00136911.pdf
STD85N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.08 EUR
Mindestbestellmenge: 2500
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STGB30H60DFB en.DM00125119.pdf
STGB30H60DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STHVDAC-256MTGF3 en.DM00229754.pdf
STHVDAC-256MTGF3
Hersteller: STMicroelectronics
Description: IC DAC 7BIT 20FLIPCHIP
Produkt ist nicht verfügbar
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STPTIC-27L2C5
STPTIC-27L2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
Produkt ist nicht verfügbar
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Z0402MF0AA2 z04.pdf
Z0402MF0AA2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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Z0405NF0AA2 z04.pdf
Z0405NF0AA2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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Z0409NF0AA2 z04.pdf
Z0409NF0AA2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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Z0410MF0AA2 z04.pdf
Z0410MF0AA2
Hersteller: STMicroelectronics
Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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Z0405MF0AA2 z04.pdf
Z0405MF0AA2
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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STGF15M65DF2 en.DM00237960.pdf
STGF15M65DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
50+1.09 EUR
100+1.07 EUR
500+1.06 EUR
1000+0.98 EUR
Mindestbestellmenge: 12
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STGF5H60DF en.DM00149621.pdf
STGF5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
Produkt ist nicht verfügbar
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STGP15M65DF2 en.DM00237971.pdf
STGP15M65DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Produkt ist nicht verfügbar
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STGP30H60DFB en.DM00125119.pdf
STGP30H60DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
50+2.24 EUR
100+2.11 EUR
Mindestbestellmenge: 4
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STGP5H60DF en.DM00149621.pdf
STGP5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
auf Bestellung 1944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
50+1.42 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 6
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STGW30M65DF2 en.DM00177695.pdf
STGW30M65DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
30+3.78 EUR
120+3.1 EUR
Mindestbestellmenge: 3
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STP110N8F7 en.DM00064632.pdf
STP110N8F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Produkt ist nicht verfügbar
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STP27N60M2-EP en.DM00251846.pdf
STP27N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Produkt ist nicht verfügbar
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STW27N60M2-EP en.DM00251846.pdf
STW27N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
30+2.68 EUR
120+2.24 EUR
510+2.23 EUR
Mindestbestellmenge: 3
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STF7LN80K5 en.DM00256224.pdf
STF7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 3128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
50+2.07 EUR
100+1.99 EUR
500+1.66 EUR
1000+1.53 EUR
2000+1.42 EUR
Mindestbestellmenge: 5
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STF9N80K5 en.DM00064632.pdf
STF9N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Produkt ist nicht verfügbar
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STFI7LN80K5 en.DM00256619.pdf
STFI7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STFI9N80K5 STF%28I%299N80K5.pdf
STFI9N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Produkt ist nicht verfügbar
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STP7LN80K5 en.DM00260911.pdf
STP7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
50+2.2 EUR
100+2.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STU7LN80K5 en.DM00261198.pdf
STU7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
4+4.59 EUR
75+2.14 EUR
150+1.93 EUR
525+1.64 EUR
1050+1.52 EUR
2025+1.42 EUR
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STF10LN80K5 en.DM00176897.pdf
STF10LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
auf Bestellung 799 Stücke:
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Anzahl Preis
4+4.88 EUR
50+3.86 EUR
100+3.31 EUR
500+2.94 EUR
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STP10LN80K5 en.DM00176858.pdf
STP10LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Produkt ist nicht verfügbar
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STGIF7CH60TS-L en.DM00122690.pdf
STGIF7CH60TS-L
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
auf Bestellung 119 Stücke:
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Anzahl Preis
2+17.41 EUR
13+10.71 EUR
104+9.03 EUR
Mindestbestellmenge: 2
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STWA48N60M2 en.DM00250450.pdf
STWA48N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
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STF26N60M2 en.DM00166992.pdf
STF26N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 844 Stücke:
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Anzahl Preis
4+5.17 EUR
50+2.56 EUR
100+2.37 EUR
500+1.92 EUR
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STFI26N60M2 en.DM00166992.pdf
STFI26N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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STIEC45-24ACS en.CD00258714.pdf
STIEC45-24ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 5 Stücke:
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STIEC45-26ACS en.CD00258714.pdf
STIEC45-26ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STIEC45-28ACS en.CD00258714.pdf
STIEC45-28ACS
Hersteller: STMicroelectronics
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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STD46N6F7 en.DM00227324.pdf
STD46N6F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
Produkt ist nicht verfügbar
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STGB5H60DF en.DM00149621.pdf
STGB5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Produkt ist nicht verfügbar
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STGD5H60DF en.DM00149621.pdf
STGD5H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
auf Bestellung 3906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
14+1.35 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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STL50DN6F7 en.DM00216100.pdf
STL50DN6F7
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+2.08 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.08 EUR
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STD7LN80K5 en.DM00256349.pdf
STD7LN80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 2443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.66 EUR
100+1.83 EUR
500+1.49 EUR
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