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STFU15NM65N STFU15NM65N STMicroelectronics en.DM00168872.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
Produkt ist nicht verfügbar
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STFU24N60M2 STFU24N60M2 STMicroelectronics en.DM00168868.pdf Description: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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STGIB10CH60TS-L STGIB10CH60TS-L STMicroelectronics en.DM00116577.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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1+23.78 EUR
13+16.15 EUR
104+12.69 EUR
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STGIB15CH60TS-E STGIB15CH60TS-E STMicroelectronics en.DM00122999.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIF10CH60TS-L STGIF10CH60TS-L STMicroelectronics en.DM00116137.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIF5CH60TS-L STGIF5CH60TS-L STMicroelectronics en.DM00122681.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 8 A
Voltage: 600 V
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13+11.79 EUR
104+9.13 EUR
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STNRG288A STNRG288A STMicroelectronics en.DM00179358.pdf Description: DIGITAL CONTROLLER FOR POWER CON
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Applications: PWM Generator
Current - Supply: 100mA
Supplier Device Package: 28-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STP220N6F7 STP220N6F7 STMicroelectronics en.DM00122330.pdf Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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SMC30J36A SMC30J36A STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC30J36CA SMC30J36CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC30J40A SMC30J40A STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC30J40CA SMC30J40CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC30J48CA SMC30J48CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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STM32F756ZGT6 STM32F756ZGT6 STMicroelectronics en.DM00166114.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, Ethernet, HDMI-CEC, I2C, IrDA, LINbus, MMC/SD, SAI, SPDIFRX, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 114
DigiKey Programmable: Not Verified
auf Bestellung 1510 Stücke:
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1+32.42 EUR
10+25.84 EUR
60+22.98 EUR
120+22.20 EUR
240+21.56 EUR
480+21.04 EUR
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STM32F745VGT6 STM32F745VGT6 STMicroelectronics en.DM00166116.pdf Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SD, SPDIF-Rx, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Verified
auf Bestellung 1137 Stücke:
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1+25.43 EUR
10+23.38 EUR
25+22.41 EUR
90+19.75 EUR
270+18.78 EUR
450+17.56 EUR
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EVAL-ST95HF EVAL-ST95HF STMicroelectronics en.DM00122639.pdf Description: EVALUATION BOARD FOR ST95HF
Packaging: Box
For Use With/Related Products: ST95HF
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STEVAL-ISA176V1 STEVAL-ISA176V1 STMicroelectronics en.CD00285102.pdf Description: EVAL BOARD FOR ALTAIR05T800
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ALTAIR05T-800
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 5W
Produkt ist nicht verfügbar
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STW37N60DM2AG STW37N60DM2AG STMicroelectronics en.DM00223410.pdf Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
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2+9.35 EUR
30+5.83 EUR
120+5.71 EUR
Mindestbestellmenge: 2
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STW65N65DM2AG STW65N65DM2AG STMicroelectronics STW65N65DM2AG.pdf Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 228 Stücke:
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1+17.71 EUR
30+9.62 EUR
120+8.87 EUR
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STP45N60DM2AG STP45N60DM2AG STMicroelectronics en.DM00211656.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW72N60DM2AG STW72N60DM2AG STMicroelectronics en.DM00152603.pdf Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 258 Stücke:
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2+11.49 EUR
30+7.50 EUR
120+7.01 EUR
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STW58N60DM2AG STW58N60DM2AG STMicroelectronics en.DM00187802.pdf Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW45N60DM2AG STW45N60DM2AG STMicroelectronics en.DM00211587.pdf Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STP45N40DM2AG STP45N40DM2AG STMicroelectronics en.DM00213649.pdf Description: MOSFET N-CH 400V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.13 EUR
50+6.95 EUR
100+6.53 EUR
500+5.58 EUR
Mindestbestellmenge: 2
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STW58N65DM2AG STW58N65DM2AG STMicroelectronics en.DM00228874.pdf Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW50N65DM2AG STW50N65DM2AG STMicroelectronics en.DM00214262.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 594 Stücke:
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3+8.76 EUR
30+5.62 EUR
510+5.33 EUR
Mindestbestellmenge: 3
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EMIF02-01OABRY EMIF02-01OABRY STMicroelectronics EMIF02-01OABRY.pdf Description: CMC 2LN ESD AEC-Q101
Produkt ist nicht verfügbar
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STB37N60DM2AG STB37N60DM2AG STMicroelectronics en.DM00224610.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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STB45N60DM2AG STB45N60DM2AG STMicroelectronics en.DM00206852.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STB45N40DM2AG STB45N40DM2AG STMicroelectronics en.DM00225195.pdf Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STB45N50DM2AG STB45N50DM2AG STMicroelectronics en.DM00232376.pdf Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STB34N50DM2AG STB34N50DM2AG STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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EMIF02-01OABRY EMIF02-01OABRY STMicroelectronics EMIF02-01OABRY.pdf Description: CMC 2LN ESD AEC-Q101
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STB37N60DM2AG STB37N60DM2AG STMicroelectronics en.DM00224610.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
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STB45N60DM2AG STB45N60DM2AG STMicroelectronics en.DM00206852.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
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STB45N40DM2AG STB45N40DM2AG STMicroelectronics en.DM00225195.pdf Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
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STB45N50DM2AG STB45N50DM2AG STMicroelectronics en.DM00232376.pdf Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
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STB34N50DM2AG STB34N50DM2AG STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
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STM32F429I-DISC1 STM32F429I-DISC1 STMicroelectronics en.DM00094498.pdf Description: DISCOVERY STM32F429 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F429
Platform: Discovery
Part Status: Active
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EVAL-L5963 EVAL-L5963 STMicroelectronics en.DM00230702.pdf Description: EVAL BOARD FOR L5963D
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STEVAL-ISA164V1 STEVAL-ISA164V1 STMicroelectronics en.DM00179358.pdf Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Function: Digital Power Controller
Type: Power Management
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
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STEVAL-IDB006V1M STEVAL-IDB006V1M STMicroelectronics en.DM00240699.pdf Description: EVAL BOARD USB DONGLE SPBTLE-RF
Packaging: Bulk
For Use With/Related Products: BlueNRG-MS, SPBTLE-RF
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: BlueNRG-MS, SPBTLE-RF
Supplied Contents: Board(s)
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STEVAL-ILL075V1 STEVAL-ILL075V1 STMicroelectronics en.DM00185105.pdf Description: EVAL BOARD FOR STLUX385A
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SPBTLE-RF SPBTLE-RF STMicroelectronics Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 11-SMD Module
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.1
Current - Receiving: 8.5mA
Current - Transmitting: 8.5mA
Antenna Type: Integrated, Chip
Utilized IC / Part: BlueNRG
RF Family/Standard: Bluetooth
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F410RBT6 STM32F410RBT6 STMicroelectronics stm32f410cb.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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3+6.95 EUR
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STM32F410CBU6 STM32F410CBU6 STMicroelectronics stm32f410cb.pdf Description: IC MCU 32BIT 128KB FLSH 48UFQFPN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-UFQFPN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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3+6.25 EUR
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520+3.60 EUR
1040+3.50 EUR
2600+3.40 EUR
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STM32F479NIH6 STM32F479NIH6 STMicroelectronics en.DM00208574.pdf Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SDIO, SPI, UART/USART, USB, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Number of I/O: 161
DigiKey Programmable: Not Verified
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1+34.55 EUR
10+31.76 EUR
25+30.44 EUR
160+26.82 EUR
320+25.51 EUR
480+23.86 EUR
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L5963D-EHX L5963D-EHX STMicroelectronics en.DM00240738.pdf Description: IC REG TRPL BUCK/LNR SYNC 36PSSO
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STM32F091RCY6TR STM32F091RCY6TR STMicroelectronics en.DM00115237.pdf Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24M02-DWMN3TP/K M24M02-DWMN3TP/K STMicroelectronics en.DM00200595.pdf Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2500+5.20 EUR
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M24C64-FCU6TP/TF M24C64-FCU6TP/TF STMicroelectronics en.CD00259166.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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M24C32-FCU6TP/TF M24C32-FCU6TP/TF STMicroelectronics en.CD00001012.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F091RCY6TR STM32F091RCY6TR STMicroelectronics en.DM00115237.pdf Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Cut Tape (CT)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24M02-DWMN3TP/K M24M02-DWMN3TP/K STMicroelectronics en.DM00200595.pdf Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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50+5.82 EUR
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500+5.36 EUR
1000+5.31 EUR
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M24C32-FCU6TP/TF M24C32-FCU6TP/TF STMicroelectronics en.CD00001012.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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1.5KE33CARL 1.5KE33CARL STMicroelectronics en.CD00000663.pdf Description: TVS DIODE 28.2VWM 59VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 169A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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1.5KE39ARL 1.5KE39ARL STMicroelectronics en.CD00000663.pdf Description: TVS DIODE 33.3VWM 69.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 2400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 143A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 8795 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
18+1.00 EUR
100+0.69 EUR
500+0.55 EUR
Mindestbestellmenge: 15
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BZW06-58BRL BZW06-58BRL STMicroelectronics en.CD00000694.pdf Description: TVS DIODE 58.1VWM 121VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 312.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 33A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 11798 Stücke:
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20+0.92 EUR
23+0.79 EUR
100+0.55 EUR
500+0.46 EUR
1000+0.39 EUR
2000+0.35 EUR
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BZW50-22 BZW50-22 STMicroelectronics bzw50-68b.pdf Description: TVS DIODE 22VWM 51VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1177A (1.177kA) (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 82 Stücke:
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4+5.44 EUR
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BZW50-27 BZW50-27 STMicroelectronics bzw50-68b.pdf Description: TVS DIODE 27VWM 62VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 968A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 62V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 58 Stücke:
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5+4.19 EUR
10+3.11 EUR
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STFU15NM65N en.DM00168872.pdf
STFU15NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
Produkt ist nicht verfügbar
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STFU24N60M2 en.DM00168868.pdf
STFU24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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STGIB10CH60TS-L en.DM00116577.pdf
STGIB10CH60TS-L
Hersteller: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 130 Stücke:
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Anzahl Preis
1+23.78 EUR
13+16.15 EUR
104+12.69 EUR
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STGIB15CH60TS-E en.DM00122999.pdf
STGIB15CH60TS-E
Hersteller: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIF10CH60TS-L en.DM00116137.pdf
STGIF10CH60TS-L
Hersteller: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIF5CH60TS-L en.DM00122681.pdf
STGIF5CH60TS-L
Hersteller: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 8 A
Voltage: 600 V
auf Bestellung 126 Stücke:
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Anzahl Preis
1+17.64 EUR
13+11.79 EUR
104+9.13 EUR
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STNRG288A en.DM00179358.pdf
STNRG288A
Hersteller: STMicroelectronics
Description: DIGITAL CONTROLLER FOR POWER CON
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Applications: PWM Generator
Current - Supply: 100mA
Supplier Device Package: 28-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STP220N6F7 en.DM00122330.pdf
STP220N6F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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SMC30J36A en.DM00035134.pdf
SMC30J36A
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC30J36CA en.DM00035134.pdf
SMC30J36CA
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC30J40A en.DM00035134.pdf
SMC30J40A
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC30J40CA en.DM00035134.pdf
SMC30J40CA
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC30J48CA en.DM00035134.pdf
SMC30J48CA
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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STM32F756ZGT6 en.DM00166114.pdf
STM32F756ZGT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, Ethernet, HDMI-CEC, I2C, IrDA, LINbus, MMC/SD, SAI, SPDIFRX, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 114
DigiKey Programmable: Not Verified
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.42 EUR
10+25.84 EUR
60+22.98 EUR
120+22.20 EUR
240+21.56 EUR
480+21.04 EUR
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STM32F745VGT6 en.DM00166116.pdf
STM32F745VGT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SD, SPDIF-Rx, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Verified
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.43 EUR
10+23.38 EUR
25+22.41 EUR
90+19.75 EUR
270+18.78 EUR
450+17.56 EUR
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EVAL-ST95HF en.DM00122639.pdf
EVAL-ST95HF
Hersteller: STMicroelectronics
Description: EVALUATION BOARD FOR ST95HF
Packaging: Box
For Use With/Related Products: ST95HF
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STEVAL-ISA176V1 en.CD00285102.pdf
STEVAL-ISA176V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR ALTAIR05T800
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ALTAIR05T-800
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 5W
Produkt ist nicht verfügbar
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STW37N60DM2AG en.DM00223410.pdf
STW37N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.35 EUR
30+5.83 EUR
120+5.71 EUR
Mindestbestellmenge: 2
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STW65N65DM2AG STW65N65DM2AG.pdf
STW65N65DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.71 EUR
30+9.62 EUR
120+8.87 EUR
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STP45N60DM2AG en.DM00211656.pdf
STP45N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW72N60DM2AG en.DM00152603.pdf
STW72N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.49 EUR
30+7.50 EUR
120+7.01 EUR
Mindestbestellmenge: 2
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STW58N60DM2AG en.DM00187802.pdf
STW58N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW45N60DM2AG en.DM00211587.pdf
STW45N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STP45N40DM2AG en.DM00213649.pdf
STP45N40DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.13 EUR
50+6.95 EUR
100+6.53 EUR
500+5.58 EUR
Mindestbestellmenge: 2
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STW58N65DM2AG en.DM00228874.pdf
STW58N65DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW50N65DM2AG en.DM00214262.pdf
STW50N65DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.76 EUR
30+5.62 EUR
510+5.33 EUR
Mindestbestellmenge: 3
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EMIF02-01OABRY EMIF02-01OABRY.pdf
EMIF02-01OABRY
Hersteller: STMicroelectronics
Description: CMC 2LN ESD AEC-Q101
Produkt ist nicht verfügbar
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STB37N60DM2AG en.DM00224610.pdf
STB37N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.40 EUR
Mindestbestellmenge: 1000
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STB45N60DM2AG en.DM00206852.pdf
STB45N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.03 EUR
Mindestbestellmenge: 1000
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STB45N40DM2AG en.DM00225195.pdf
STB45N40DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STB45N50DM2AG en.DM00232376.pdf
STB45N50DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.40 EUR
Mindestbestellmenge: 1000
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STB34N50DM2AG en.DM00223646.pdf
STB34N50DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EMIF02-01OABRY EMIF02-01OABRY.pdf
EMIF02-01OABRY
Hersteller: STMicroelectronics
Description: CMC 2LN ESD AEC-Q101
Produkt ist nicht verfügbar
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STB37N60DM2AG en.DM00224610.pdf
STB37N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.26 EUR
10+8.28 EUR
100+6.61 EUR
Mindestbestellmenge: 2
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STB45N60DM2AG en.DM00206852.pdf
STB45N60DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 7295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.84 EUR
10+7.36 EUR
100+6.15 EUR
Mindestbestellmenge: 2
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STB45N40DM2AG en.DM00225195.pdf
STB45N40DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.38 EUR
10+9.21 EUR
Mindestbestellmenge: 2
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STB45N50DM2AG en.DM00232376.pdf
STB45N50DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 2725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.39 EUR
10+8.48 EUR
100+6.61 EUR
Mindestbestellmenge: 2
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STB34N50DM2AG en.DM00223646.pdf
STB34N50DM2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STM32F429I-DISC1 en.DM00094498.pdf
STM32F429I-DISC1
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F429 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F429
Platform: Discovery
Part Status: Active
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.10 EUR
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EVAL-L5963 en.DM00230702.pdf
EVAL-L5963
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR L5963D
Produkt ist nicht verfügbar
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STEVAL-ISA164V1 en.DM00179358.pdf
STEVAL-ISA164V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Function: Digital Power Controller
Type: Power Management
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+110.69 EUR
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STEVAL-IDB006V1M en.DM00240699.pdf
STEVAL-IDB006V1M
Hersteller: STMicroelectronics
Description: EVAL BOARD USB DONGLE SPBTLE-RF
Packaging: Bulk
For Use With/Related Products: BlueNRG-MS, SPBTLE-RF
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: BlueNRG-MS, SPBTLE-RF
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-ILL075V1 en.DM00185105.pdf
STEVAL-ILL075V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STLUX385A
Produkt ist nicht verfügbar
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SPBTLE-RF
SPBTLE-RF
Hersteller: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 11-SMD Module
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.1
Current - Receiving: 8.5mA
Current - Transmitting: 8.5mA
Antenna Type: Integrated, Chip
Utilized IC / Part: BlueNRG
RF Family/Standard: Bluetooth
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F410RBT6 stm32f410cb.pdf
STM32F410RBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
auf Bestellung 1028 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+5.27 EUR
25+4.85 EUR
160+4.26 EUR
320+4.11 EUR
640+3.99 EUR
Mindestbestellmenge: 3
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STM32F410CBU6 stm32f410cb.pdf
STM32F410CBU6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLSH 48UFQFPN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-UFQFPN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 3504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.25 EUR
10+4.73 EUR
25+4.34 EUR
100+3.93 EUR
260+3.72 EUR
520+3.60 EUR
1040+3.50 EUR
2600+3.40 EUR
Mindestbestellmenge: 3
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STM32F479NIH6 en.DM00208574.pdf
STM32F479NIH6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SDIO, SPI, UART/USART, USB, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Number of I/O: 161
DigiKey Programmable: Not Verified
auf Bestellung 1466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.55 EUR
10+31.76 EUR
25+30.44 EUR
160+26.82 EUR
320+25.51 EUR
480+23.86 EUR
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L5963D-EHX en.DM00240738.pdf
L5963D-EHX
Hersteller: STMicroelectronics
Description: IC REG TRPL BUCK/LNR SYNC 36PSSO
Produkt ist nicht verfügbar
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STM32F091RCY6TR en.DM00115237.pdf
STM32F091RCY6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24M02-DWMN3TP/K en.DM00200595.pdf
M24M02-DWMN3TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
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Anzahl Preis
2500+5.20 EUR
Mindestbestellmenge: 2500
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M24C64-FCU6TP/TF en.CD00259166.pdf
M24C64-FCU6TP/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24C32-FCU6TP/TF en.CD00001012.pdf
M24C32-FCU6TP/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F091RCY6TR en.DM00115237.pdf
STM32F091RCY6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Cut Tape (CT)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24M02-DWMN3TP/K en.DM00200595.pdf
M24M02-DWMN3TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 16537 Stücke:
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Anzahl Preis
3+6.58 EUR
10+6.14 EUR
25+5.96 EUR
50+5.82 EUR
100+5.68 EUR
250+5.50 EUR
500+5.36 EUR
1000+5.31 EUR
Mindestbestellmenge: 3
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M24C32-FCU6TP/TF en.CD00001012.pdf
M24C32-FCU6TP/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1.5KE33CARL en.CD00000663.pdf
1.5KE33CARL
Hersteller: STMicroelectronics
Description: TVS DIODE 28.2VWM 59VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 169A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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1.5KE39ARL en.CD00000663.pdf
1.5KE39ARL
Hersteller: STMicroelectronics
Description: TVS DIODE 33.3VWM 69.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 2400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 143A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 8795 Stücke:
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Anzahl Preis
15+1.21 EUR
18+1.00 EUR
100+0.69 EUR
500+0.55 EUR
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BZW06-58BRL en.CD00000694.pdf
BZW06-58BRL
Hersteller: STMicroelectronics
Description: TVS DIODE 58.1VWM 121VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 312.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 33A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 11798 Stücke:
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20+0.92 EUR
23+0.79 EUR
100+0.55 EUR
500+0.46 EUR
1000+0.39 EUR
2000+0.35 EUR
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BZW50-22 bzw50-68b.pdf
BZW50-22
Hersteller: STMicroelectronics
Description: TVS DIODE 22VWM 51VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1177A (1.177kA) (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.55 EUR
Mindestbestellmenge: 4
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BZW50-27 bzw50-68b.pdf
BZW50-27
Hersteller: STMicroelectronics
Description: TVS DIODE 27VWM 62VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 968A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 62V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+3.11 EUR
Mindestbestellmenge: 5
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