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STEVAL-ISA191V1 STEVAL-ISA191V1 STMicroelectronics en.DM00249988.pdf Description: EVAL BOARD FOR VIPER37
Packaging: Bulk
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1.2A, 750mA
Contents: Board(s)
Frequency - Switching: 60kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: VIPer37
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 2 Isolated Outputs
Part Status: Active
Produkt ist nicht verfügbar
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X-NUCLEO-LED61A1 X-NUCLEO-LED61A1 STMicroelectronics en.DM00255169.pdf Description: NUCLEO BOARD LED6001 LED DRIVER
Packaging: Bulk
Function: LED Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: LED6001
Platform: Nucleo
Part Status: Active
Produkt ist nicht verfügbar
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STM32F051T8Y6TR STM32F051T8Y6TR STMicroelectronics en.DM00039193.pdf Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F031E6Y6TR STM32F031E6Y6TR STMicroelectronics en.DM00104043.pdf Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F051T8Y6TR STM32F051T8Y6TR STMicroelectronics en.DM00039193.pdf Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
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STM32F031E6Y6TR STM32F031E6Y6TR STMicroelectronics en.DM00104043.pdf Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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100+2.58 EUR
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STPTIC-27G2C5 STMicroelectronics DM00217084.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
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STPTIC-33G2C5 STPTIC-33G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-39G2C5 STPTIC-39G2C5 STMicroelectronics en.DM00214174.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
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STPTIC-47G2C5 STPTIC-47G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-56G2C5 STPTIC-56G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-68G2C5 STPTIC-68G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-82G2C5 STPTIC-82G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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M24C32M-FCU6T/TF M24C32M-FCU6T/TF STMicroelectronics en.DM00222730.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24C32M-FCU6T/TF M24C32M-FCU6T/TF STMicroelectronics en.DM00222730.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24C64M-FCU6T/TF M24C64M-FCU6T/TF STMicroelectronics Description: IC EEPROM 64KBIT 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F407G-DISC1 STM32F407G-DISC1 STMicroelectronics en.DM00037051.pdf Description: DISCOVERY STM32F407/STM32F417
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407, STM32F417
Platform: Discovery
Part Status: Active
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BALF-CC25-02D3 BALF-CC25-02D3 STMicroelectronics en.DM00245522.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Produkt ist nicht verfügbar
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BALF-CC25-02D3 BALF-CC25-02D3 STMicroelectronics en.DM00245522.pdf Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Produkt ist nicht verfügbar
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EMIF06-USD14F3 EMIF06-USD14F3 STMicroelectronics Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF
Height: 0.217" (5.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
Produkt ist nicht verfügbar
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STAC1011-350 STAC1011-350 STMicroelectronics Description: RF MOSFET LDMOS 36V STAC265B
Packaging: Tube
Package / Case: STAC265B
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 350W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 36 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
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STB23N80K5 STB23N80K5 STMicroelectronics en.DM00225377.pdf Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
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STB23N80K5 STB23N80K5 STMicroelectronics en.DM00225377.pdf Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Produkt ist nicht verfügbar
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STB43N65M5 STB43N65M5 STMicroelectronics en.DM00217114.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
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STB43N65M5 STB43N65M5 STMicroelectronics en.DM00217114.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
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STF23N80K5 STF23N80K5 STMicroelectronics en.DM00225383.pdf Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
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STFU28N65M2 STFU28N65M2 STMicroelectronics en.DM00167986.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
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STGIPQ3H60T-HL STGIPQ3H60T-HL STMicroelectronics en.DM00149104.pdf Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
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STGIPQ3H60T-HZ STGIPQ3H60T-HZ STMicroelectronics en.DM00149104.pdf Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
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STGIPQ5C60T-HZ STGIPQ5C60T-HZ STMicroelectronics en.DM00131764.pdf Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 327 Stücke:
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STHVDAC-253MTGF3 STHVDAC-253MTGF3 STMicroelectronics Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
Produkt ist nicht verfügbar
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STL135N8F7AG STL135N8F7AG STMicroelectronics en.DM00224699.pdf Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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STL135N8F7AG STL135N8F7AG STMicroelectronics en.DM00224699.pdf Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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STP23N80K5 STP23N80K5 STMicroelectronics en.DM00235958.pdf Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
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STPSC10H065GY-TR STPSC10H065GY-TR STMicroelectronics en.DM00123401.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
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STPSC10H065GY-TR STPSC10H065GY-TR STMicroelectronics en.DM00123401.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
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STPTIC-15G2C5 STPTIC-15G2C5 STMicroelectronics Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STPTIC-15G2C5 STPTIC-15G2C5 STMicroelectronics Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STPTIC-39G2C5 STPTIC-39G2C5 STMicroelectronics en.DM00214174.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
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STTH30ACS06W STTH30ACS06W STMicroelectronics en.DM00231434.pdf Description: DIODE STANDARD 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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STW23N80K5 STW23N80K5 STMicroelectronics en.DM00225098.pdf Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
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STW65N80K5 STW65N80K5 STMicroelectronics en.DM00175110.pdf Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
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STW88N65M5-4 STW88N65M5-4 STMicroelectronics en.DM00177200.pdf Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
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STWA40N95K5 STWA40N95K5 STMicroelectronics en.DM00220988.pdf Description: MOSFET N-CH 950V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
Produkt ist nicht verfügbar
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ESDAVLC5-1BF4 ESDAVLC5-1BF4 STMicroelectronics en.DM00223541.pdf Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 133641 Stücke:
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SM30T42AY SM30T42AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM30T42CAY SM30T42CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5686 Stücke:
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7+2.55 EUR
10+1.85 EUR
100+1.30 EUR
500+1.06 EUR
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SM30T47AY SM30T47AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2593 Stücke:
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8+2.20 EUR
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SM30T47CAY SM30T47CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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17+1.09 EUR
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SM30T56AY SM30T56AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2294 Stücke:
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SM30T56CAY SM30T56CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3553 Stücke:
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STD10P10F6 STD10P10F6 STMicroelectronics en.DM00116775.pdf Description: MOSFET P-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
auf Bestellung 1432 Stücke:
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11+1.69 EUR
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STD28P3LLH6AG STD28P3LLH6AG STMicroelectronics en.DM00231309.pdf Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD30N6LF6AG STD30N6LF6AG STMicroelectronics en.DM00210369.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1386 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
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500+0.87 EUR
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STD47N10F7AG STD47N10F7AG STMicroelectronics en.DM00148114.pdf Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD64N4F6AG STD64N4F6AG STMicroelectronics en.DM00185474.pdf Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5825 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
12+1.54 EUR
100+1.02 EUR
500+0.85 EUR
1000+0.79 EUR
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STH140N6F7-2 STH140N6F7-2 STMicroelectronics STH140N6F7-2%2C6.pdf Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
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STH145N8F7-2AG STH145N8F7-2AG STMicroelectronics en.DM00189800.pdf Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
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STH6N95K5-2 STH6N95K5-2 STMicroelectronics en.DM00156940.pdf Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
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STPS4S200S STPS4S200S STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
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STEVAL-ISA191V1 en.DM00249988.pdf
STEVAL-ISA191V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VIPER37
Packaging: Bulk
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1.2A, 750mA
Contents: Board(s)
Frequency - Switching: 60kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: VIPer37
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 2 Isolated Outputs
Part Status: Active
Produkt ist nicht verfügbar
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X-NUCLEO-LED61A1 en.DM00255169.pdf
X-NUCLEO-LED61A1
Hersteller: STMicroelectronics
Description: NUCLEO BOARD LED6001 LED DRIVER
Packaging: Bulk
Function: LED Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: LED6001
Platform: Nucleo
Part Status: Active
Produkt ist nicht verfügbar
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STM32F051T8Y6TR en.DM00039193.pdf
STM32F051T8Y6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F031E6Y6TR en.DM00104043.pdf
STM32F031E6Y6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F051T8Y6TR en.DM00039193.pdf
STM32F051T8Y6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
auf Bestellung 68 Stücke:
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Anzahl Preis
4+5.68 EUR
10+4.29 EUR
25+3.94 EUR
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STM32F031E6Y6TR en.DM00104043.pdf
STM32F031E6Y6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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Anzahl Preis
5+4.22 EUR
10+3.15 EUR
25+2.88 EUR
100+2.58 EUR
250+2.44 EUR
500+2.35 EUR
1000+2.28 EUR
2500+2.21 EUR
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STPTIC-27G2C5 DM00217084.pdf
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
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STPTIC-33G2C5
STPTIC-33G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-39G2C5 en.DM00214174.pdf
STPTIC-39G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
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STPTIC-47G2C5
STPTIC-47G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-56G2C5
STPTIC-56G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-68G2C5
STPTIC-68G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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STPTIC-82G2C5
STPTIC-82G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Produkt ist nicht verfügbar
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M24C32M-FCU6T/TF en.DM00222730.pdf
M24C32M-FCU6T/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24C32M-FCU6T/TF en.DM00222730.pdf
M24C32M-FCU6T/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24C64M-FCU6T/TF
M24C64M-FCU6T/TF
Hersteller: STMicroelectronics
Description: IC EEPROM 64KBIT 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F407G-DISC1 en.DM00037051.pdf
STM32F407G-DISC1
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F407/STM32F417
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407, STM32F417
Platform: Discovery
Part Status: Active
auf Bestellung 1409 Stücke:
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Anzahl Preis
1+32.35 EUR
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BALF-CC25-02D3 en.DM00245522.pdf
BALF-CC25-02D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Produkt ist nicht verfügbar
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BALF-CC25-02D3 en.DM00245522.pdf
BALF-CC25-02D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Produkt ist nicht verfügbar
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EMIF06-USD14F3
EMIF06-USD14F3
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF
Height: 0.217" (5.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
Produkt ist nicht verfügbar
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STAC1011-350
STAC1011-350
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 36V STAC265B
Packaging: Tube
Package / Case: STAC265B
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 350W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 36 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
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STB23N80K5 en.DM00225377.pdf
STB23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.11 EUR
10+5.81 EUR
100+4.32 EUR
500+3.86 EUR
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STB23N80K5 en.DM00225377.pdf
STB23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Produkt ist nicht verfügbar
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STB43N65M5 en.DM00217114.pdf
STB43N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.64 EUR
10+10.63 EUR
100+9.39 EUR
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STB43N65M5 en.DM00217114.pdf
STB43N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+7.67 EUR
Mindestbestellmenge: 1000
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STF23N80K5 en.DM00225383.pdf
STF23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.06 EUR
50+4.08 EUR
100+3.96 EUR
500+3.87 EUR
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STFU28N65M2 en.DM00167986.pdf
STFU28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
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STGIPQ3H60T-HL en.DM00149104.pdf
STGIPQ3H60T-HL
Hersteller: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.49 EUR
10+11.34 EUR
Mindestbestellmenge: 2
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STGIPQ3H60T-HZ en.DM00149104.pdf
STGIPQ3H60T-HZ
Hersteller: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.28 EUR
10+13.96 EUR
360+10.95 EUR
Mindestbestellmenge: 2
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STGIPQ5C60T-HZ en.DM00131764.pdf
STGIPQ5C60T-HZ
Hersteller: STMicroelectronics
Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.91 EUR
15+10.99 EUR
105+8.62 EUR
Mindestbestellmenge: 2
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STHVDAC-253MTGF3
STHVDAC-253MTGF3
Hersteller: STMicroelectronics
Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
Produkt ist nicht verfügbar
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STL135N8F7AG en.DM00224699.pdf
STL135N8F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.40 EUR
10+3.60 EUR
100+2.53 EUR
500+2.21 EUR
Mindestbestellmenge: 4
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STL135N8F7AG en.DM00224699.pdf
STL135N8F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.81 EUR
Mindestbestellmenge: 3000
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STP23N80K5 en.DM00235958.pdf
STP23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 1101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.76 EUR
50+4.77 EUR
100+4.62 EUR
500+4.12 EUR
1000+4.01 EUR
Mindestbestellmenge: 3
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STPSC10H065GY-TR en.DM00123401.pdf
STPSC10H065GY-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.76 EUR
100+3.73 EUR
500+3.10 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H065GY-TR en.DM00123401.pdf
STPSC10H065GY-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.95 EUR
Mindestbestellmenge: 1000
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STPTIC-15G2C5
STPTIC-15G2C5
Hersteller: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STPTIC-15G2C5
STPTIC-15G2C5
Hersteller: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
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STPTIC-39G2C5 en.DM00214174.pdf
STPTIC-39G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
10+1.95 EUR
25+1.76 EUR
100+1.54 EUR
250+1.35 EUR
500+1.19 EUR
1000+0.94 EUR
Mindestbestellmenge: 8
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STTH30ACS06W en.DM00231434.pdf
STTH30ACS06W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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STW23N80K5 en.DM00225098.pdf
STW23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.00 EUR
30+4.72 EUR
Mindestbestellmenge: 3
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STW65N80K5 en.DM00175110.pdf
STW65N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.73 EUR
30+14.29 EUR
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STW88N65M5-4 en.DM00177200.pdf
STW88N65M5-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.19 EUR
30+16.35 EUR
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STWA40N95K5 en.DM00220988.pdf
STWA40N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
Produkt ist nicht verfügbar
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ESDAVLC5-1BF4 en.DM00223541.pdf
ESDAVLC5-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 133641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
117+0.15 EUR
285+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
2000+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 84
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SM30T42AY en.DM00035136.pdf
SM30T42AY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM30T42CAY en.DM00035136.pdf
SM30T42CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
10+1.85 EUR
100+1.30 EUR
500+1.06 EUR
1000+0.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SM30T47AY en.DM00035136.pdf
SM30T47AY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
10+1.80 EUR
100+1.40 EUR
500+1.19 EUR
1000+0.97 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SM30T47CAY en.DM00035136.pdf
SM30T47CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
19+0.96 EUR
100+0.89 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SM30T56AY en.DM00035136.pdf
SM30T56AY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
10+1.79 EUR
100+1.39 EUR
500+1.18 EUR
1000+0.96 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SM30T56CAY en.DM00035136.pdf
SM30T56CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.79 EUR
100+1.26 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STD10P10F6 en.DM00116775.pdf
STD10P10F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
auf Bestellung 1432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
14+1.27 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 11
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STD28P3LLH6AG en.DM00231309.pdf
STD28P3LLH6AG
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD30N6LF6AG en.DM00210369.pdf
STD30N6LF6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.66 EUR
100+1.10 EUR
500+0.87 EUR
1000+0.79 EUR
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STD47N10F7AG en.DM00148114.pdf
STD47N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD64N4F6AG en.DM00185474.pdf
STD64N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
12+1.54 EUR
100+1.02 EUR
500+0.85 EUR
1000+0.79 EUR
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STH140N6F7-2 STH140N6F7-2%2C6.pdf
STH140N6F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
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STH145N8F7-2AG en.DM00189800.pdf
STH145N8F7-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+4.39 EUR
100+3.08 EUR
500+2.53 EUR
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STH6N95K5-2 en.DM00156940.pdf
STH6N95K5-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 3060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.76 EUR
100+2.67 EUR
500+2.34 EUR
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STPS4S200S en.DM00136818.pdf
STPS4S200S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
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