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SS215LWH SS215LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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43+0.42 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
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SMF45AHRVG SMF45AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 45VWM 72.7VC SOD123W
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SMF45AHRVG SMF45AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 45VWM 72.7VC SOD123W
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21+0.86 EUR
25+0.71 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.27 EUR
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FR154GH FR154GH Taiwan Semiconductor Corporation FR151G SERIES_I2105.pdf Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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3500+0.12 EUR
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BSS84W RFG BSS84W RFG Taiwan Semiconductor Corporation BSS84W_A2007.pdf Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
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BSS84W RFG BSS84W RFG Taiwan Semiconductor Corporation BSS84W_A2007.pdf Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
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BSS84 RFG BSS84 RFG Taiwan Semiconductor Corporation BSS84_A2007.pdf Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 9000 Stücke:
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BSS84 RFG BSS84 RFG Taiwan Semiconductor Corporation BSS84_A2007.pdf Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 27347 Stücke:
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56+0.32 EUR
89+0.20 EUR
194+0.09 EUR
500+0.09 EUR
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TBS408 TBS408 Taiwan Semiconductor Corporation TBS406 SERIES_B2103.pdf Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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TBS408 TBS408 Taiwan Semiconductor Corporation TBS406 SERIES_B2103.pdf Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Produkt ist nicht verfügbar
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TBS606 TBS606 Taiwan Semiconductor Corporation TBS606 SERIES_B2103.pdf Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 9000 Stücke:
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1800+0.52 EUR
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TBS606 TBS606 Taiwan Semiconductor Corporation TBS606 SERIES_B2103.pdf Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 10346 Stücke:
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RTBS40M M2G RTBS40M M2G Taiwan Semiconductor Corporation Description: 300NS, 4A, 1000V, FAST RECOVERY
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RTBS40M M2G RTBS40M M2G Taiwan Semiconductor Corporation Description: 300NS, 4A, 1000V, FAST RECOVERY
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10+1.83 EUR
100+1.42 EUR
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GBL207 GBL207 Taiwan Semiconductor Corporation GBL201 SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBL204 GBL204 Taiwan Semiconductor Corporation GBL201 SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1066 Stücke:
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10+1.78 EUR
25+0.93 EUR
100+0.73 EUR
500+0.55 EUR
1000+0.50 EUR
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SF21G R0G SF21G R0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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SF21G A0G SF21G A0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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SF21G B0G SF21G B0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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SF21GHA0G SF21GHA0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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SF21GHB0G SF21GHB0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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SF21GHR0G SF21GHR0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 50V 2A DO204AC
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1N4933GH 1N4933GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC546B A1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC546B B1 BC546B B1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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1N5393G 1N5393G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N5393GH 1N5393GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ20CAH SMAJ20CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PGSMAJ20CAHF4G PGSMAJ20CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CAHR2G PGSMAJ20CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CA F4G PGSMAJ20CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CAHF3G PGSMAJ20CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMBJ20CAH SMBJ20CAH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51AH SMCJ51AH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51A M6G SMCJ51A M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
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SMCJ51A M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ51A R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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MUR340S M6G MUR340S M6G Taiwan Semiconductor Corporation MUR305S%20SERIES_J2212.pdf Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SA5.0CAH SA5.0CAH Taiwan Semiconductor Corporation Description: TVS 500W 6.7V 5% DO-15
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KBU402G KBU402G Taiwan Semiconductor Corporation KBU401G SERIES_J2103.pdf Description: DIODE BRIDGE 4A 100V KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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BC337-40-B0 A1 Taiwan Semiconductor Corporation Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40-B0 B1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC337-40 A1 Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerA12.pdf Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40-B0 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC337-40-B0 A1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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1PGSMC5352 1PGSMC5352 Taiwan Semiconductor Corporation 1PGSMC5348 SERIES_D2102.pdf Description: DIODE ZENER 15V 5W DO214AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1PGSMC5352 1PGSMC5352 Taiwan Semiconductor Corporation 1PGSMC5348 SERIES_D2102.pdf Description: DIODE ZENER 15V 5W DO214AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
auf Bestellung 2108 Stücke:
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17+1.07 EUR
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100+0.64 EUR
500+0.53 EUR
1000+0.47 EUR
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SMBJ13CAH SMBJ13CAH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BC547B B1 BC547B B1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC547B A1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 45V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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HER604G HER604G Taiwan Semiconductor Corporation HER601G%20SERIES_H2104.pdf Description: DIODE GEN PURP 300V 6A R-6
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BC338-40 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-16 A1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
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BC338-40-B0 A1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
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BC338-25-B0 B1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC338-25-B0 A1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC338-40 A1 Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerA12.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC338-40-B0 B1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC338-16 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
Produkt ist nicht verfügbar
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SS215LWH SS24LWH SERIES_B2301.pdf
SS215LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
auf Bestellung 24117 Stücke:
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Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
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SMF45AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF45AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
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Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
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SMF45AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF45AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
auf Bestellung 5930 Stücke:
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Anzahl Preis
21+0.86 EUR
25+0.71 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.27 EUR
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FR154GH FR151G SERIES_I2105.pdf
FR154GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
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Anzahl Preis
3500+0.12 EUR
Mindestbestellmenge: 3500
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BSS84W RFG BSS84W_A2007.pdf
BSS84W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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BSS84W RFG BSS84W_A2007.pdf
BSS84W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 16770 Stücke:
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Anzahl Preis
50+0.35 EUR
81+0.22 EUR
130+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 50
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BSS84 RFG BSS84_A2007.pdf
BSS84 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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BSS84 RFG BSS84_A2007.pdf
BSS84 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
auf Bestellung 27347 Stücke:
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Anzahl Preis
56+0.32 EUR
89+0.20 EUR
194+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
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TBS408 TBS406 SERIES_B2103.pdf
TBS408
Hersteller: Taiwan Semiconductor Corporation
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Produkt ist nicht verfügbar
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TBS408 TBS406 SERIES_B2103.pdf
TBS408
Hersteller: Taiwan Semiconductor Corporation
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Produkt ist nicht verfügbar
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TBS606 TBS606 SERIES_B2103.pdf
TBS606
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.52 EUR
3600+0.47 EUR
5400+0.44 EUR
9000+0.41 EUR
Mindestbestellmenge: 1800
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TBS606 TBS606 SERIES_B2103.pdf
TBS606
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 10346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
17+1.06 EUR
100+0.74 EUR
500+0.62 EUR
Mindestbestellmenge: 15
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RTBS40M M2G
RTBS40M M2G
Hersteller: Taiwan Semiconductor Corporation
Description: 300NS, 4A, 1000V, FAST RECOVERY
Produkt ist nicht verfügbar
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RTBS40M M2G
RTBS40M M2G
Hersteller: Taiwan Semiconductor Corporation
Description: 300NS, 4A, 1000V, FAST RECOVERY
auf Bestellung 1739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
10+1.83 EUR
100+1.42 EUR
500+1.18 EUR
Mindestbestellmenge: 9
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GBL207 GBL201 SERIES_J2103.pdf
GBL207
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBL204 GBL201 SERIES_J2103.pdf
GBL204
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
25+0.93 EUR
100+0.73 EUR
500+0.55 EUR
1000+0.50 EUR
Mindestbestellmenge: 10
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SF21G R0G SF21G%20SERIES_H2105.pdf
SF21G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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SF21G A0G SF21G%20SERIES_H2105.pdf
SF21G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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SF21G B0G SF21G%20SERIES_H2105.pdf
SF21G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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SF21GHA0G SF21G%20SERIES_H2105.pdf
SF21GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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SF21GHB0G SF21G%20SERIES_H2105.pdf
SF21GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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SF21GHR0G SF21G%20SERIES_H2105.pdf
SF21GHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Produkt ist nicht verfügbar
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1N4933GH
1N4933GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC546B A1 BC546-BC550A_B_C_VerD2112.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC546B B1 BC546-BC550A_B_C_VerD2112.pdf
BC546B B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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1N5393G 1N5391G SERIES_G2309.pdf
1N5393G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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1N5393GH
1N5393GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ20CAH SMAJH SERIES_A2102.pdf
SMAJ20CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PGSMAJ20CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20CAHF4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20CAHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PGSMAJ20CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20CAHF3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMBJ20CAH SMBJH SERIES_A2102.pdf
SMBJ20CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51AH SMCJH SERIES_A2102.pdf
SMCJ51AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51A M6G SMCJ SERIES_R2004.pdf
SMCJ51A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
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SMCJ51A M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ51A R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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MUR340S M6G MUR305S%20SERIES_J2212.pdf
MUR340S M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SA5.0CAH
SA5.0CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 500W 6.7V 5% DO-15
Produkt ist nicht verfügbar
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KBU402G KBU401G SERIES_J2103.pdf
KBU402G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 100V KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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BC337-40-B0 A1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40-B0 B1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40 A1 BC337_thru_BC338-16_25_40_VerA12.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40-B0 B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40-B0 A1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC337-40 B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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1PGSMC5352 1PGSMC5348 SERIES_D2102.pdf
1PGSMC5352
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 5W DO214AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1PGSMC5352 1PGSMC5348 SERIES_D2102.pdf
1PGSMC5352
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 5W DO214AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
auf Bestellung 2108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.47 EUR
Mindestbestellmenge: 17
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SMBJ13CAH SMBJH SERIES_A2102.pdf
SMBJ13CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BC547B B1 BC546-BC550A_B_C_VerD2112.pdf
BC547B B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC547B A1 BC546-BC550A_B_C_VerD2112.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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HER604G HER601G%20SERIES_H2104.pdf
HER604G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A R-6
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BC338-40 B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-16 A1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
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BC338-40-B0 A1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Produkt ist nicht verfügbar
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BC338-25-B0 B1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-25-B0 A1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-40 A1 BC337_thru_BC338-16_25_40_VerA12.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-40-B0 B1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-16 B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Produkt ist nicht verfügbar
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