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ES1ALH ES1ALH Taiwan Semiconductor Corporation ES1ALH SERIES_A2103.pdf Description: DIODE STANDARD 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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RS1AL RHG RS1AL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1AL RHG S1AL RHG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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S1ALHRHG S1ALHRHG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS1ALHMHG RS1ALHMHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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P4KE250CAH P4KE250CAH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 214VWM 344VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZT52C11S BZT52C11S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 11V 200MW SOD323F
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT52C11 BZT52C11 Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 11V 500MW SOD123F
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT52C11-G BZT52C11-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 11V 350MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT52C11K BZT52C11K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 11V 200MW SOD523F
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMDJ28CAH SMDJ28CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CAH SMDJ28CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CA M6G SMDJ28CA M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHM6G SMDJ28CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CA R7G SMDJ28CA R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHR7G SMDJ28CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES1GLWH ES1GLWH Taiwan Semiconductor Corporation ES1DLWH SERIES_B2110.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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ES1GLWH ES1GLWH Taiwan Semiconductor Corporation ES1DLWH SERIES_B2110.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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ES1GFL ES1GFL Taiwan Semiconductor Corporation ES1DFL SERIES_D2103.pdf Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GH ES1GH Taiwan Semiconductor Corporation ES1AH SERIES_B2112.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TS78L12ACY RMG TS78L12ACY RMG Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 12V 100MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 12V
Control Features: Current Limit
PSRR: 42dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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SS23M SS23M Taiwan Semiconductor Corporation SS22M SERIES_M2103.pdf Description: 2A, 30V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SS23L SS23L Taiwan Semiconductor Corporation SS22L SERIES_O2103.pdf Description: 2A, 30V, SCHOTTKY RECTIFIER
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
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SS23LH SS23LH Taiwan Semiconductor Corporation SS22LH SERIES_A2103.pdf Description: 2A, 30V, SCHOTTKY RECTIFIER
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
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BC338-40-B0 A1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-16-B0 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BZX85C15 A0G BZX85C15 A0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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BZX85C15 A0G BZX85C15 A0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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BZX85C15 R0G BZX85C15 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Produkt ist nicht verfügbar
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BZT55C8V2 BZT55C8V2 Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_I2301.pdf Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: QMMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Produkt ist nicht verfügbar
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BZV55B6V2 L0G BZV55B6V2 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 6.2V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Produkt ist nicht verfügbar
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BZT55B6V2 L0G BZT55B6V2 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 6.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Produkt ist nicht verfügbar
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BZT55B8V2 L0G BZT55B8V2 L0G Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
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BZT55B6V2 BZT55B6V2 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
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BZT55B8V2 BZT55B8V2 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
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1N4728G R0G 1N4728G R0G Taiwan Semiconductor Corporation 1N4728G SERIES_G2301.pdf Description: DIODE ZENER 3.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BZW04-33 BZW04-33 Taiwan Semiconductor Corporation BZW04 SERIES_J2104.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-33 BZW04-33 Taiwan Semiconductor Corporation BZW04 SERIES_J2104.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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TSS83L45 TSS83L45 Taiwan Semiconductor Corporation TSS83L45C2103.pdf Description: DIODE SCHOTTKY 45V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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TSS83L45 TSS83L45 Taiwan Semiconductor Corporation TSS83L45C2103.pdf Description: DIODE SCHOTTKY 45V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SS220LW SS220LW Taiwan Semiconductor Corporation SS24LW SERIES_D2301.pdf Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SS220LW SS220LW Taiwan Semiconductor Corporation SS24LW SERIES_D2301.pdf Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SS220LWH SS220LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SS220FSH SS220FSH Taiwan Semiconductor Corporation SS24FSH SERIES_B2103.pdf Description: DIODE SCHOTTKY 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 39pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
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SS220ALH SS220ALH Taiwan Semiconductor Corporation SS24ALH SERIES_B2103.pdf Description: DIODE SCHOTTKY 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 39pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SRT15 R0G SRT15 R0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 50V 1A TS-1
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SRT15 A0G SRT15 A0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 50V 1A TS-1
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SA36 SA36 Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: 500W, 44.5V, 10%, UNIDIRECTIONAL
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SA36H SA36H Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: 500W, 44.5V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.1A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 500W
Power Line Protection: No
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SA36C SA36C Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: 500W, 44.5V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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SA36CH SA36CH Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: 500W, 44.5V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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P4KE47CAH P4KE47CAH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA39A P4SMA39A Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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GBU405-K GBU405-K Taiwan Semiconductor Corporation GBU404-K SERIES_E2103.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SSL33 SSL33 Taiwan Semiconductor Corporation SSL32%20SERIES_J2102.pdf Description: DIODE SCHOTTKY 30V 3A DO214AB
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SSL33H SSL33H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO214AB
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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MUR420 MUR420 Taiwan Semiconductor Corporation MUR420 SERIES_J2105.pdf Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MUR420 MUR420 Taiwan Semiconductor Corporation MUR420 SERIES_J2105.pdf Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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TSM018NB03CR RLG TSM018NB03CR RLG Taiwan Semiconductor Corporation TSM018NB03CR_A1910.pdf Description: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
Produkt ist nicht verfügbar
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TSM018NB03CR RLG TSM018NB03CR RLG Taiwan Semiconductor Corporation TSM018NB03CR_A1910.pdf Description: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
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ES1ALH ES1ALH SERIES_A2103.pdf
ES1ALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RS1AL RHG RS1AL%20SERIES_N2103.pdf
RS1AL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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S1AL RHG S1AL%20SERIES_Q2108.pdf
S1AL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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S1ALHRHG S1AL%20SERIES_Q2108.pdf
S1ALHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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RS1ALHMHG RS1AL%20SERIES_N2103.pdf
RS1ALHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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P4KE250CAH P4KE%20SERIES_N2104.pdf
P4KE250CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 214VWM 344VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZT52C11S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C11S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD323F
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C11 BZT52C2V4%20SERIES_G1804.pdf
BZT52C11
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW SOD123F
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C11-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C11-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 350MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C11K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C11K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD523F
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMDJ28CAH SMDJH SERIES_B2104.pdf
SMDJ28CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ28CAH SMDJH SERIES_B2104.pdf
SMDJ28CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CA M6G SMDJ%20SERIES_I2104.pdf
SMDJ28CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ28CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ28CA R7G SMDJ%20SERIES_I2104.pdf
SMDJ28CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ28CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ28CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1GLWH ES1DLWH SERIES_B2110.pdf
ES1GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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ES1GLWH ES1DLWH SERIES_B2110.pdf
ES1GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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ES1GFL ES1DFL SERIES_D2103.pdf
ES1GFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GH ES1AH SERIES_B2112.pdf
ES1GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TS78L12ACY RMG TS78L00_M2206.pdf
TS78L12ACY RMG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 12V 100MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 12V
Control Features: Current Limit
PSRR: 42dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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SS23M SS22M SERIES_M2103.pdf
SS23M
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 30V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS23L SS22L SERIES_O2103.pdf
SS23L
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 30V, SCHOTTKY RECTIFIER
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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SS23LH SS22LH SERIES_A2103.pdf
SS23LH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 30V, SCHOTTKY RECTIFIER
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Produkt ist nicht verfügbar
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BC338-40-B0 A1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC338-16-B0 B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BZX85C15 A0G BZX85C3V3 SERIES_H2301.pdf
BZX85C15 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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55+0.38 EUR
76+0.27 EUR
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BZX85C15 A0G BZX85C3V3 SERIES_H2301.pdf
BZX85C15 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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BZX85C15 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C15 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Produkt ist nicht verfügbar
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BZT55C8V2 BZT55C2V4%20SERIES_I2301.pdf
BZT55C8V2
Hersteller: Taiwan Semiconductor Corporation
Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: QMMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Produkt ist nicht verfügbar
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BZV55B6V2 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B6V2 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Produkt ist nicht verfügbar
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BZT55B6V2 L0G
BZT55B6V2 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Produkt ist nicht verfügbar
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BZT55B8V2 L0G BZT55B2V4%20SERIES_I2301.pdf
BZT55B8V2 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Produkt ist nicht verfügbar
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BZT55B6V2 BZT55B2V4%20SERIES_I2301.pdf
BZT55B6V2
Hersteller: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
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BZT55B8V2 BZT55B2V4%20SERIES_I2301.pdf
BZT55B8V2
Hersteller: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
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1N4728G R0G 1N4728G SERIES_G2301.pdf
1N4728G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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BZW04-33 BZW04 SERIES_J2104.pdf
BZW04-33
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-33 BZW04 SERIES_J2104.pdf
BZW04-33
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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TSS83L45 TSS83L45C2103.pdf
TSS83L45
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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TSS83L45 TSS83L45C2103.pdf
TSS83L45
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SS220LW SS24LW SERIES_D2301.pdf
SS220LW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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10000+0.14 EUR
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SS220LW SS24LW SERIES_D2301.pdf
SS220LW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 14784 Stücke:
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SS220LWH SS24LWH SERIES_B2301.pdf
SS220LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SS220FSH SS24FSH SERIES_B2103.pdf
SS220FSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 39pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS220ALH SS24ALH SERIES_B2103.pdf
SS220ALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 39pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRT15 R0G SRT12%20SERIES_I2104.pdf
SRT15 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A TS-1
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SRT15 A0G SRT12%20SERIES_I2104.pdf
SRT15 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A TS-1
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SA36 SA%20SERIES_L2105.pdf
SA36
Hersteller: Taiwan Semiconductor Corporation
Description: 500W, 44.5V, 10%, UNIDIRECTIONAL
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SA36H SA%20SERIES_L2105.pdf
SA36H
Hersteller: Taiwan Semiconductor Corporation
Description: 500W, 44.5V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.1A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA36C SA%20SERIES_L2105.pdf
SA36C
Hersteller: Taiwan Semiconductor Corporation
Description: 500W, 44.5V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SA36CH SA%20SERIES_L2105.pdf
SA36CH
Hersteller: Taiwan Semiconductor Corporation
Description: 500W, 44.5V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 8.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P4KE47CAH P4KE%20SERIES_N2104.pdf
P4KE47CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA39A P4SMA SERIES_S2102.pdf
P4SMA39A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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GBU405-K GBU404-K SERIES_E2103.pdf
GBU405-K
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SSL33 SSL32%20SERIES_J2102.pdf
SSL33
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AB
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSL33H
SSL33H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AB
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MUR420 MUR420 SERIES_J2105.pdf
MUR420
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.19 EUR
50+0.88 EUR
100+0.79 EUR
500+0.6 EUR
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MUR420 MUR420 SERIES_J2105.pdf
MUR420
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
auf Bestellung 1250 Stücke:
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AnzahlPrivatkunde
1250+0.52 EUR
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TSM018NB03CR RLG TSM018NB03CR_A1910.pdf
TSM018NB03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
Produkt ist nicht verfügbar
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TSM018NB03CR RLG TSM018NB03CR_A1910.pdf
TSM018NB03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.76 EUR
10+3.06 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.54 EUR
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