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BZT52C6V8-G RHG BZT52C6V8-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 6.8V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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BZT52C6V8K RKG BZT52C6V8K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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BZT52C6V8K RKG BZT52C6V8K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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BZT52C6V8-G BZT52C6V8-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 6.8V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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BZT52C6V8K BZT52C6V8K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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TS6K40H TS6K40H Taiwan Semiconductor Corporation TS6K40 SERIES_F2101.pdf Description: 6A, 400V, STANDARD BRIDGE RECTIF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: TS4K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS4K
Packaging: Tube
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TS10K40H TS10K40H Taiwan Semiconductor Corporation TS10K40 SERIES_F2101.pdf Description: 10A, 400V, STANDARD BRIDGE RECTI
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: TS4K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS4K
Packaging: Tube
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TSS42U Taiwan Semiconductor Corporation Description: 603, 30V, 0.2A, SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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PU3DCH PU3DCH Taiwan Semiconductor Corporation PU3BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU3DCH PU3DCH Taiwan Semiconductor Corporation PU3BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU6BCH PU6BCH Taiwan Semiconductor Corporation PU6BCH SERIES_C2110.pdf Description: DIODE STANDARD 100V 6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU6BCH PU6BCH Taiwan Semiconductor Corporation PU6BCH SERIES_C2110.pdf Description: DIODE STANDARD 100V 6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU6DCH PU6DCH Taiwan Semiconductor Corporation PU6BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU6DCH PU6DCH Taiwan Semiconductor Corporation PU6BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU3JC PU3JC Taiwan Semiconductor Corporation PU3JC_A2212.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU8JC PU8JC Taiwan Semiconductor Corporation PU8JC_A2212.pdf Description: DIODE STANDARD 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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PU3DC PU3DC Taiwan Semiconductor Corporation PU3BC SERIES_A2210.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU3DC PU3DC Taiwan Semiconductor Corporation PU3BC SERIES_A2210.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU3BC PU3BC Taiwan Semiconductor Corporation PU3BC SERIES_A2210.pdf Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU3BC PU3BC Taiwan Semiconductor Corporation PU3BC SERIES_A2210.pdf Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU4BC PU4BC Taiwan Semiconductor Corporation PU4BC SERIES_A2210.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU4BC PU4BC Taiwan Semiconductor Corporation PU4BC SERIES_A2210.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU4DC PU4DC Taiwan Semiconductor Corporation PU4BC SERIES_A2210.pdf Description: 25NS, 4A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU4DC PU4DC Taiwan Semiconductor Corporation PU4BC SERIES_A2210.pdf Description: 25NS, 4A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU6BC PU6BC Taiwan Semiconductor Corporation PU6BC SERIES_A2210.pdf Description: 25NS, 6A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU6BC PU6BC Taiwan Semiconductor Corporation PU6BC SERIES_A2210.pdf Description: 25NS, 6A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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S8MCH S8MCH Taiwan Semiconductor Corporation S8GCH SERIES_B2210.pdf Description: DIODE STANDARD 1000V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8MH TUAS8MH Taiwan Semiconductor Corporation TUAS8DH SERIES_A2111.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8MH TUAS8MH Taiwan Semiconductor Corporation TUAS8DH SERIES_A2111.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAU8MH TUAU8MH Taiwan Semiconductor Corporation TUAU8DH SERIES_A2111.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAU8MH TUAU8MH Taiwan Semiconductor Corporation TUAU8DH SERIES_A2111.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TBS810 TBS810 Taiwan Semiconductor Corporation TBS806 SERIES_A2010.pdf Description: 8A, 1000V, STANDARD BRIDGE RECTI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TBS810 TBS810 Taiwan Semiconductor Corporation TBS806 SERIES_A2010.pdf Description: 8A, 1000V, STANDARD BRIDGE RECTI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HERA808GH HERA808GH Taiwan Semiconductor Corporation HERA801G%20SERIES_J2103.pdf Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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500+1.02 EUR
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5.0SMDJ60AH 5.0SMDJ60AH Taiwan Semiconductor Corporation 5.0SMDJH SERIES_A2102.pdf Description: 5000W, 70.2V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C68-G RHG BZT52C68-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G SERIES_C2007.pdf Description: DIODE ZENER 68V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52C68-G RHG BZT52C68-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G SERIES_C2007.pdf Description: DIODE ZENER 68V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52B68-G RHG BZT52B68-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52B68-G RHG BZT52B68-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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TST40L100CW TST40L100CW Taiwan Semiconductor Corporation TST40L100CW SERIES_C2104.pdf Description: DIODE SCHOTTKY 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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TS2937CP50 ROG TS2937CP50 ROG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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TS2937CP50 ROG TS2937CP50 ROG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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FR301G-K FR301G-K Taiwan Semiconductor Corporation FR301G-K%20SERIES_C2105.pdf Description: 150NS, 3A, 50V, FAST RECOVERY RE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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FR301GH FR301GH Taiwan Semiconductor Corporation FR301G%20SERIES_H2105.pdf Description: 150NS, 3A, 50V, FAST RECOVERY RE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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MTZJ2V2SB R0G MTZJ2V2SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 2.32V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
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MTZJ10SA R0G MTZJ10SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 9.36V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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MTZJ10SB R0G MTZJ10SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 9.66V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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MTZJ10SC R0G MTZJ10SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 9.95V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.95 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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MTZJ10SD R0G MTZJ10SD R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 10.21V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.21 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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MTZJ11SA R0G MTZJ11SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 10.45V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.45 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
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MTZJ11SB R0G MTZJ11SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 10.78V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.78 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
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MTZJ11SC R0G MTZJ11SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 11.1V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
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MTZJ12SA R0G MTZJ12SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 11.42V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.42 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
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MTZJ12SB R0G MTZJ12SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 11.74V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.74 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
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MTZJ12SC R0G MTZJ12SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 12.05V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
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MTZJ13SA R0G MTZJ13SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 12.43V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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MTZJ13SB R0G MTZJ13SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 12.88V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.88 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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MTZJ13SC R0G MTZJ13SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 13.33V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
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MTZJ15SA R0G MTZJ15SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 13.79V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.79 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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MTZJ15SB R0G MTZJ15SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA SERIES_D2301.pdf Description: DIODE ZENER 14.26V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.26 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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BZT52C6V8-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C6V8-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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134+0.15 EUR
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BZT52C6V8K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C6V8K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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BZT52C6V8K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C6V8K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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50+0.42 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
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BZT52C6V8-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C6V8-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
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BZT52C6V8K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C6V8K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Produkt ist nicht verfügbar
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TS6K40H TS6K40 SERIES_F2101.pdf
TS6K40H
Hersteller: Taiwan Semiconductor Corporation
Description: 6A, 400V, STANDARD BRIDGE RECTIF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: TS4K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS4K
Packaging: Tube
Produkt ist nicht verfügbar
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TS10K40H TS10K40 SERIES_F2101.pdf
TS10K40H
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 400V, STANDARD BRIDGE RECTI
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: TS4K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS4K
Packaging: Tube
Produkt ist nicht verfügbar
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TSS42U
Hersteller: Taiwan Semiconductor Corporation
Description: 603, 30V, 0.2A, SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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PU3DCH PU3BCH SERIES_C2110.pdf
PU3DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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3000+0.31 EUR
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PU3DCH PU3BCH SERIES_C2110.pdf
PU3DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7096 Stücke:
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23+0.94 EUR
27+0.8 EUR
100+0.56 EUR
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PU6BCH PU6BCH SERIES_C2110.pdf
PU6BCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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3000+0.45 EUR
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PU6BCH PU6BCH SERIES_C2110.pdf
PU6BCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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12+1.82 EUR
19+1.14 EUR
100+0.75 EUR
500+0.57 EUR
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PU6DCH PU6BCH SERIES_C2110.pdf
PU6DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.38 EUR
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PU6DCH PU6BCH SERIES_C2110.pdf
PU6DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5274 Stücke:
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19+1.15 EUR
22+1 EUR
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500+0.57 EUR
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PU3JC PU3JC_A2212.pdf
PU3JC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
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PU8JC PU8JC_A2212.pdf
PU8JC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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PU3DC PU3BC SERIES_A2210.pdf
PU3DC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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3000+0.29 EUR
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PU3DC PU3BC SERIES_A2210.pdf
PU3DC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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30+0.71 EUR
100+0.5 EUR
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PU3BC PU3BC SERIES_A2210.pdf
PU3BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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3000+0.29 EUR
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PU3BC PU3BC SERIES_A2210.pdf
PU3BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 3000 Stücke:
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25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.39 EUR
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PU4BC PU4BC SERIES_A2210.pdf
PU4BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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3000+0.35 EUR
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PU4BC PU4BC SERIES_A2210.pdf
PU4BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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21+1.02 EUR
24+0.88 EUR
100+0.61 EUR
500+0.48 EUR
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PU4DC PU4BC SERIES_A2210.pdf
PU4DC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU4DC PU4BC SERIES_A2210.pdf
PU4DC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU6BC PU6BC SERIES_A2210.pdf
PU6BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PU6BC PU6BC SERIES_A2210.pdf
PU6BC
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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S8MCH S8GCH SERIES_B2210.pdf
S8MCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8MH TUAS8DH SERIES_A2111.pdf
TUAS8MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8MH TUAS8DH SERIES_A2111.pdf
TUAS8MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAU8MH TUAU8DH SERIES_A2111.pdf
TUAU8MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TUAU8MH TUAU8DH SERIES_A2111.pdf
TUAU8MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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9+2.34 EUR
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TBS810 TBS806 SERIES_A2010.pdf
TBS810
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1000V, STANDARD BRIDGE RECTI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TBS810 TBS806 SERIES_A2010.pdf
TBS810
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1000V, STANDARD BRIDGE RECTI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HERA808GH HERA801G%20SERIES_J2103.pdf
HERA808GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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5.0SMDJ60AH 5.0SMDJH SERIES_A2102.pdf
5.0SMDJ60AH
Hersteller: Taiwan Semiconductor Corporation
Description: 5000W, 70.2V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C68-G RHG BZT52C2V4-G SERIES_C2007.pdf
BZT52C68-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52C68-G RHG BZT52C2V4-G SERIES_C2007.pdf
BZT52C68-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52B68-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B68-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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BZT52B68-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B68-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
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TST40L100CW TST40L100CW SERIES_C2104.pdf
TST40L100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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TS2937CP50 ROG TS2937_E15.pdf
TS2937CP50 ROG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
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TS2937CP50 ROG TS2937_E15.pdf
TS2937CP50 ROG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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FR301G-K FR301G-K%20SERIES_C2105.pdf
FR301G-K
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 3A, 50V, FAST RECOVERY RE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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FR301GH FR301G%20SERIES_H2105.pdf
FR301GH
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 3A, 50V, FAST RECOVERY RE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MTZJ2V2SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ2V2SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.32V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Produkt ist nicht verfügbar
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MTZJ10SA R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ10SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.36V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MTZJ10SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ10SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.66V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MTZJ10SC R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ10SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.95V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.95 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MTZJ10SD R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ10SD R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.21V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.21 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MTZJ11SA R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ11SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.45V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.45 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
Produkt ist nicht verfügbar
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MTZJ11SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ11SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.78V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10.78 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
Produkt ist nicht verfügbar
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MTZJ11SC R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ11SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.1V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 8 V
Produkt ist nicht verfügbar
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MTZJ12SA R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ12SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.42V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.42 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Produkt ist nicht verfügbar
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MTZJ12SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ12SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.74V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11.74 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Produkt ist nicht verfügbar
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MTZJ12SC R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ12SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Produkt ist nicht verfügbar
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MTZJ13SA R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ13SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.43V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
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MTZJ13SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ13SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.88V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.88 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
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MTZJ13SC R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ13SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.33V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 10 V
Produkt ist nicht verfügbar
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MTZJ15SA R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ15SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.79V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.79 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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MTZJ15SB R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ15SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.26V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.26 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-34
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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