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RS1GFSHMWG RS1GFSHMWG RS1xFS_DS.pdf Taiwan Semiconductor Corporation Description: DIODE
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
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auf Bestellung 3202 Stücke
Lieferzeit 21-28 Tag (e)
22+ 1.2 EUR
29+ 0.91 EUR
100+ 0.57 EUR
500+ 0.39 EUR
1000+ 0.3 EUR
RS1GFS MWG RS1GFS MWG RS1xFS_DS.pdf Taiwan Semiconductor Corporation Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
3500+ 0.26 EUR
Taiwan Semiconductor Corporation Description: DIODE
Package / Case: SOD-128
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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auf Bestellung 6510 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
33+ 0.8 EUR
100+ 0.5 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
RS1G R3G RS1G R3G RS1A%20SERIES_L2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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auf Bestellung 262800 Stücke
Lieferzeit 21-28 Tag (e)
1800+ 0.44 EUR
3600+ 0.4 EUR
5400+ 0.38 EUR
12600+ 0.35 EUR
45000+ 0.33 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Discontinued at Digi-Key
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auf Bestellung 264600 Stücke
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19+ 1.4 EUR
23+ 1.14 EUR
100+ 0.78 EUR
500+ 0.58 EUR
RS1GLW RVG RS1GLW RVG RS1DLW%20SERIES_A1511.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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auf Bestellung 4061 Stücke
Lieferzeit 21-28 Tag (e)
22+ 1.22 EUR
27+ 1 EUR
100+ 0.68 EUR
500+ 0.51 EUR
1000+ 0.38 EUR
RS1GLWHRVG RS1GLWHRVG RS1DLW%20SERIES_A1511.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.4 EUR
6000+ 0.38 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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auf Bestellung 11681 Stücke
Lieferzeit 21-28 Tag (e)
19+ 1.4 EUR
23+ 1.14 EUR
100+ 0.78 EUR
500+ 0.58 EUR
1000+ 0.44 EUR
RS1GL R3G RS1GL R3G RS1AL%20SERIES_N2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 800MA SUBSMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 800MA SUBSMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
BZT55C6V8 L0G BZT55C6V8 L0G BZT55C2V4%20SERIES_G1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.8V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100nA @ 3V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6.8V
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
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BZS55C6V8 RXG BZS55C2V4%20SERIES_D1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.8V 500MW 1206
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
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BZT55C6V8 L1G BZT55C6V8 L1G BZT55C2V4%20SERIES_G1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.8V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZY55C6V8 RYG BZY55C2V4%20SERIES_D1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.8V 500MW 0805
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
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MBRS1645HMNG MBRS1645HMNG MBRS1635%20SERIES_J15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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MBRS1645 MNG MBRS1645 MNG MBRS1635%20SERIES_J15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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TS9011SCX RFG TS9011SCX RFG TS9011_H1608.pdf Taiwan Semiconductor Corporation Description: IC REG LINEAR 3.3V 250MA SOT23
Supplier Device Package: SOT-23
Number of Regulators: 1
Protection Features: Over Temperature
Voltage Dropout (Max): 0.65V @ 200mA
PSRR: 30dB (100kHz)
Part Status: Active
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Control Features: Current Limit, Reset
Voltage - Output (Min/Fixed): 3.3V
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auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.65 EUR
6000+ 0.63 EUR
TS39104CS RLG TS39104CS RLG TS39104CS_D1706.pdf Taiwan Semiconductor Corporation Description: IC REG LINEAR POS ADJ 1A 8SOP
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.63V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 20 mA
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1SMB5934 M4G 1SMB5934 M4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 24V 3W DO214AA
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 18.2V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
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1SMB5934HM4G 1SMB5934HM4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 24V 3W DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 18.2V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
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1SMB5934 R5G 1SMB5934 R5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 24V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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1SMB5934HR5G 1SMB5934HR5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 24V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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UGF1008G C0G UGF1008G C0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 10A ITO220AB
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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auf Bestellung 1408 Stücke
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UGF1005G C0G UGF1005G C0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 300V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 300V
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UGF1006G C0G UGF1006G C0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 400V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
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UGF1004GHC0G UGF1004GHC0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
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UGF1005GHC0G UGF1005GHC0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 300V ITO-220AB
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
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UGF1006GHC0G UGF1006GHC0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 400V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 20ns
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UGF1004G C0G UGF1004G C0G UGF1004G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V ITO-220AB
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
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MBRF3080CTHC0G MBRF3080CTHC0G MBRF3035CT%20SERIES_M2105.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 80V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF3080CT C0G MBRF3080CT C0G MBRF3035CT%20SERIES_M2105.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 80V ITO220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
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ES3BHR7G ES3BHR7G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
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P6SMB30CA R5G P6SMB30CA R5G P6SMB%20SERIES_P2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 15A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
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Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 15A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
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auf Bestellung 721 Stücke
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P6SMB30CA M4G P6SMB30CA M4G P6SMB%20SERIES_P2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6SMB30CAHM4G P6SMB30CAHM4G P6SMB%20SERIES_P2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6SMB30CAHR5G P6SMB30CAHR5G P6SMB%20SERIES_P2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SRAF10100 C0G SRAF10100 C0G SRAF1020%20SERIES_H1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 100V 10A ITO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 100V
Packaging: Tube
Part Status: Active
Diode Type: Schottky
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MBRF1060CT C0G MBRF1060CT C0G MBRF1035CT%20SERIES_M2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 10A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
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auf Bestellung 988 Stücke
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MBRF10150CT C0G MBRF10150CT C0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 10A ITO220AB
Base Part Number: MBRF10150
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
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auf Bestellung 976 Stücke
Lieferzeit 21-28 Tag (e)
MBRF1035CT C0G MBRF1035CT C0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 35V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF1045 C0G MBRF1045 C0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 10A ITO220AC
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRF1045
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MBRF1045CT C0G MBRF1045CT C0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 45V ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Base Part Number: MBRF1045
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MBRF1050CT C0G MBRF1050CT C0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
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MBRF1090CT C0G MBRF1090CT C0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 90V ITO220AB
Part Status: Active
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
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MBRF1035 C0G MBRF1035 C0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 35V 10A ITO220AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
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MBRF1050 C0G MBRF1050 C0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
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MBRF1060 C0G MBRF1060 C0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 10A ITO220AC
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MBRF1090 C0G MBRF1090 C0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 10A ITO220AC
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
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MBRF1035CTHC0G MBRF1035CTHC0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 35V ITO220AB
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
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MBRF1045CTHC0G MBRF1045CTHC0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 45V ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Base Part Number: MBRF1045
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MBRF1045HC0G MBRF1045HC0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 10A ITO220AC
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRF1045
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BZX79C4V7 A0G BZX79C4V7 A0G BZX79C2V0%20SERIES_F1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
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TSM80N950CP ROG TSM80N950CP ROG TSM80N950_B1706.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 6A TO252
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 6A TO252
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10422 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CP ROG TSM80N1R2CP ROG TSM80N1R2_B1706.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 5.5A TO252
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 5.5A TO252
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6290 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CH C5G TSM80N1R2CH C5G TSM80N1R2_B1706.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 5.5A TO251
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: TSM80
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3710 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N950CH C5G TSM80N950CH C5G TSM80N950_B1706.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 6A TO251
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: TSM80
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3236 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N400CF C0G TSM80N400CF C0G TSM80N400CF_B1704.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 12A ITO220S
Rds On (Max) @ Id, Vgs: 400mOhm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Supplier Device Package: ITO-220S
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1913 Stücke
Lieferzeit 21-28 Tag (e)
TSM85N10CZ C0G TSM85N10CZ C0G TSM85N10_B15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 81A TO220
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 565 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.63 EUR
10+ 4.17 EUR
100+ 3.35 EUR
500+ 2.75 EUR
TSM80N950CI C0G TSM80N950CI C0G TSM80N950_B1706.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 6A ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Base Part Number: TSM80
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 478 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CI C0G TSM80N1R2CI C0G TSM80N1R2CI_A1604.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 5.5A ITO220
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CL C0G TSM80N1R2CL_A1603.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 5.5A TO262S
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262S (I2PAK)
Package / Case: TO-262-3 Short Leads, I²Pak
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
TSM8N80CZ C0G TSM8N80CZ C0G TSM8N80_D15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N80CI C0G TSM8N80CI C0G TSM8N80_D15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 8A ITO220AB
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 995 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.68 EUR
10+ 5.99 EUR
100+ 4.91 EUR
500+ 4.18 EUR
TSM8N50CH C5G TSM8N50CH C5G TSM8N50_C15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 500V 7.2A TO251
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 25V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N50CP ROG TSM8N50CP ROG TSM8N50_C15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 25V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N70CI C0G TSM8N70CI C0G TSM8N70_D1707.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N70CI C0 TSM8N70_D1707.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55B3V0 L0G BZV55B3V0 L0G BZV55B2V4%20Series_F1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-171B R0G BZW04-171B R0G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 171V 274V DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30L100CT C0G MBR30L100CT C0G MBR30L45CT%20SERIES_K13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 100V TO220
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 500µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 15A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30L100CTHC0G MBR30L100CTHC0G MBR30L45CT%20SERIES_K13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 100V TO220
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 500µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 15A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30H100CT C0G MBR30H100CT C0G MBR30H100CT_J15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 100V TO220
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMCJ26A V7G SMCJ26A V7G SMCJ SERIES_R2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 995 Stücke
Lieferzeit 21-28 Tag (e)
SMCJ26A R7G SMCJ26A R7G SMCJ SERIES_R2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 37A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 37A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 590 Stücke
Lieferzeit 21-28 Tag (e)
1.5SMC24AHR7G 1.5SMC24AHR7G 1.5SMC%20SERIES_O1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 20.5V 33.2V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 47A
Voltage - Clamping (Max) @ Ipp: 33.2V
Voltage - Breakdown (Min): 22.8V
Voltage - Reverse Standoff (Typ): 20.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
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P6KE36CA R0G P6KE36CA R0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 30.8VWM 49.9VC DO204AC
Voltage - Reverse Standoff (Typ): 30.8V
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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P6KE36CAHR0G P6KE36CAHR0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 30.8VWM 49.9VC DO204AC
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Bidirectional Channels: 1
Base Part Number: P6KE36
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Power Line Protection: No
Power - Peak Pulse: 600W
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BZX55C3V6 A0G BZX55C3V6 A0G BZX55C2V0%20SERIES_D1610.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 3.6V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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SR1040 C0G SR1040 C0G SR1020%20SERIES_L2104.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 10A TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SR1040HC0G SR1040HC0G SR1020%20SERIES_L2104.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SMCJ54A V7G SMCJ54A V7G SMCJ%20SERIES_Q1812.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 54V 87.1V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 18A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBS10HRCG MBS10HRCG MBS2%20SERIES_P2103.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 1kV
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBS10
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MBS10 RCG MBS10 RCG MBS2%20SERIES_P2103.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1KV 800MA MBS
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 1kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBS10
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-102 R0G BZW04-102 R0G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 102VWM 165VC DO204AL
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-110B R1G BZW04-110B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 111V 179V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 111V
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Current - Peak Pulse (10/1000µs): 2.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-11B R1G BZW04-11B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 11.1V 18.2V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Peak Pulse (10/1000µs): 22A
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Voltage - Reverse Standoff (Typ): 11.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-128B R1G BZW04-128B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 128V 207V DO204AL
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 128V
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Current - Peak Pulse (10/1000µs): 2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-136B R1G BZW04-136B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 136V 219V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Voltage - Reverse Standoff (Typ): 136V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-13B R1G BZW04-13B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8V 21.2V DO204AL
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 19A
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Bidirectional Channels: 1
Type: Zener
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-145B R1G BZW04-145B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 145V 234V DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 161V
Part Status: Active
Type: Zener
Voltage - Reverse Standoff (Typ): 145V
Bidirectional Channels: 1
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-14B R1G BZW04-14B R1G BZW04%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 13.6V 22.5V DO204AL
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Voltage - Reverse Standoff (Typ): 13.6V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-154B R1G BZW04-154B R1G BZW04%20SERIES_J2104.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 154VWM 246VC DO204AL
Voltage - Reverse Standoff (Typ): 154V
Bidirectional Channels: 1
Type: Zener
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZW04-15B R1G BZW04-15B R1G BZW04%20SERIES_J2104.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 15.3VWM 25.2VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 16A
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 15.3V
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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RS1GFSHMWG RS1xFS_DS.pdf
RS1GFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
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22+ 1.2 EUR
29+ 0.91 EUR
100+ 0.57 EUR
500+ 0.39 EUR
1000+ 0.3 EUR
RS1GFS MWG RS1xFS_DS.pdf
RS1GFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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3500+ 0.26 EUR
RS1GFS MWG RS1xFS_DS.pdf
RS1GFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Package / Case: SOD-128
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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25+ 1.07 EUR
33+ 0.8 EUR
100+ 0.5 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
RS1G R3G RS1A%20SERIES_L2102.pdf
RS1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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1800+ 0.44 EUR
3600+ 0.4 EUR
5400+ 0.38 EUR
12600+ 0.35 EUR
45000+ 0.33 EUR
RS1G R3G RS1A%20SERIES_L2102.pdf
RS1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Discontinued at Digi-Key
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19+ 1.4 EUR
23+ 1.14 EUR
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500+ 0.58 EUR
RS1GLW RVG RS1DLW%20SERIES_A1511.pdf
RS1GLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RS1GLW RVG RS1DLW%20SERIES_A1511.pdf
RS1GLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLWHRVG RS1DLW%20SERIES_A1511.pdf
RS1GLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
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3000+ 0.4 EUR
6000+ 0.38 EUR
RS1GLWHRVG RS1DLW%20SERIES_A1511.pdf
RS1GLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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19+ 1.4 EUR
23+ 1.14 EUR
100+ 0.78 EUR
500+ 0.58 EUR
1000+ 0.44 EUR
RS1GL R3G RS1AL%20SERIES_N2103.pdf
RS1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
RS1GL R3G RS1AL%20SERIES_N2103.pdf
RS1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
BZT55C6V8 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C6V8 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100nA @ 3V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6.8V
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZS55C6V8 RXG BZS55C2V4%20SERIES_D1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW 1206
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1880 Stücke - Preis und Lieferfrist anzeigen
BZT55C6V8 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C6V8 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZY55C6V8 RYG BZY55C2V4%20SERIES_D1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW 0805
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS1645HMNG MBRS1635%20SERIES_J15.pdf
MBRS1645HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS1645 MNG MBRS1635%20SERIES_J15.pdf
MBRS1645 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS9011SCX RFG TS9011_H1608.pdf
TS9011SCX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 250MA SOT23
Supplier Device Package: SOT-23
Number of Regulators: 1
Protection Features: Over Temperature
Voltage Dropout (Max): 0.65V @ 200mA
PSRR: 30dB (100kHz)
Part Status: Active
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Control Features: Current Limit, Reset
Voltage - Output (Min/Fixed): 3.3V
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 44077 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.65 EUR
6000+ 0.63 EUR
TS39104CS RLG TS39104CS_D1706.pdf
TS39104CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR POS ADJ 1A 8SOP
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.63V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 20 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5934 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5934 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 3W DO214AA
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 18.2V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5934HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5934HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 3W DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 18.2V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5934 R5G 1SMB5926%20SERIES_K1701.pdf
1SMB5934 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5934HR5G 1SMB5926%20SERIES_K1701.pdf
1SMB5934HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1008G C0G UGF1004G%20SERIES_E15.pdf
UGF1008G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AB
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1408 Stücke
Lieferzeit 21-28 Tag (e)
UGF1005G C0G UGF1004G%20SERIES_E15.pdf
UGF1005G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 300V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1006G C0G UGF1004G%20SERIES_E15.pdf
UGF1006G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1004GHC0G UGF1004G%20SERIES_E15.pdf
UGF1004GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1005GHC0G UGF1004G%20SERIES_E15.pdf
UGF1005GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V ITO-220AB
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1006GHC0G UGF1004G%20SERIES_E15.pdf
UGF1006GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 20ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UGF1004G C0G UGF1004G%20SERIES_E15.pdf
UGF1004G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF3080CTHC0G MBRF3035CT%20SERIES_M2105.pdf
MBRF3080CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 80V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF3080CT C0G MBRF3035CT%20SERIES_M2105.pdf
MBRF3080CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 80V ITO220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3BHR7G ES3A%20SERIES_L1708.pdf
ES3BHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB30CA R5G P6SMB%20SERIES_P2102.pdf
P6SMB30CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 15A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 721 Stücke - Preis und Lieferfrist anzeigen
P6SMB30CA R5G P6SMB%20SERIES_P2102.pdf
P6SMB30CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 15A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
auf Bestellung 721 Stücke
Lieferzeit 21-28 Tag (e)
P6SMB30CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB30CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 332 Stücke - Preis und Lieferfrist anzeigen
P6SMB30CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB30CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB30CAHR5G P6SMB%20SERIES_P2102.pdf
P6SMB30CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRAF10100 C0G SRAF1020%20SERIES_H1512.pdf
SRAF10100 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A ITO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 100V
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1060CT C0G MBRF1035CT%20SERIES_M2105.pdf
MBRF1060CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
auf Bestellung 988 Stücke
Lieferzeit 21-28 Tag (e)
MBRF10150CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF10150CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A ITO220AB
Base Part Number: MBRF10150
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Current - Average Rectified (Io) (per Diode): 10A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
auf Bestellung 976 Stücke
Lieferzeit 21-28 Tag (e)
MBRF1035CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF1035CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 35V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1045 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1045 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A ITO220AC
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRF1045
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1045CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF1045CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Base Part Number: MBRF1045
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1050CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF1050CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF1090CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Part Status: Active
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1035 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1035 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 10A ITO220AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1050 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1050 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1060 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1060 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1090 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1035CTHC0G MBRF1035CT%20SERIES_L13.pdf
MBRF1035CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 35V ITO220AB
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1045CTHC0G MBRF1035CT%20SERIES_L13.pdf
MBRF1045CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Base Part Number: MBRF1045
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1045HC0G MBRF1035%20SERIES_L1512.pdf
MBRF1045HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A ITO220AC
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRF1045
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX79C4V7 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C4V7 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15422 Stücke - Preis und Lieferfrist anzeigen
TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
auf Bestellung 10422 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
TSM80N1R2CP ROG TSM80N1R2_B1706.pdf
TSM80N1R2CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO252
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6290 Stücke - Preis und Lieferfrist anzeigen
TSM80N1R2CP ROG TSM80N1R2_B1706.pdf
TSM80N1R2CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO252
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
TSM80N1R2CH C5G TSM80N1R2_B1706.pdf
TSM80N1R2CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO251
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: TSM80
auf Bestellung 3710 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N950CH C5G TSM80N950_B1706.pdf
TSM80N950CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO251
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: TSM80
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 3236 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N400CF C0G TSM80N400CF_B1704.pdf
TSM80N400CF C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 12A ITO220S
Rds On (Max) @ Id, Vgs: 400mOhm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Supplier Device Package: ITO-220S
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 1913 Stücke
Lieferzeit 21-28 Tag (e)
TSM85N10CZ C0G TSM85N10_B15.pdf
TSM85N10CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 81A TO220
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 565 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.63 EUR
10+ 4.17 EUR
100+ 3.35 EUR
500+ 2.75 EUR
TSM80N950CI C0G TSM80N950_B1706.pdf
TSM80N950CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 6A ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Base Part Number: TSM80
auf Bestellung 478 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CI C0G TSM80N1R2CI_A1604.pdf
TSM80N1R2CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A ITO220
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
TSM80N1R2CL C0G TSM80N1R2CL_A1603.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO262S
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262S (I2PAK)
Package / Case: TO-262-3 Short Leads, I²Pak
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TSM8N80CZ C0G TSM8N80_D15.pdf
TSM8N80CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N80CI C0G TSM8N80_D15.pdf
TSM8N80CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 8A ITO220AB
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
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4+ 6.68 EUR
10+ 5.99 EUR
100+ 4.91 EUR
500+ 4.18 EUR
TSM8N50CH C5G TSM8N50_C15.pdf
TSM8N50CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO251
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 25V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N50CP ROG TSM8N50_C15.pdf
TSM8N50CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 25V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N70CI C0G TSM8N70_D1707.pdf
TSM8N70CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM8N70CI C0 TSM8N70_D1707.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55B3V0 L0G BZV55B2V4%20Series_F1804.pdf
BZV55B3V0 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-171B R0G BZW04%20SERIES_I15.pdf
BZW04-171B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171V 274V DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30L100CT C0G MBR30L45CT%20SERIES_K13.pdf
MBR30L100CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 500µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 15A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30L100CTHC0G MBR30L45CT%20SERIES_K13.pdf
MBR30L100CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 500µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 15A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30H100CT C0G MBR30H100CT_J15.pdf
MBR30H100CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMCJ26A V7G SMCJ SERIES_R2004.pdf
SMCJ26A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 850 Stücke
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SMCJ26A V7G SMCJ SERIES_R2004.pdf
SMCJ26A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
auf Bestellung 995 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
SMCJ26A R7G SMCJ SERIES_R2004.pdf
SMCJ26A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 37A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 590 Stücke - Preis und Lieferfrist anzeigen
SMCJ26A R7G SMCJ SERIES_R2004.pdf
SMCJ26A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 37A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 590 Stücke
Lieferzeit 21-28 Tag (e)
1.5SMC24AHR7G 1.5SMC%20SERIES_O1708.pdf
1.5SMC24AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 47A
Voltage - Clamping (Max) @ Ipp: 33.2V
Voltage - Breakdown (Min): 22.8V
Voltage - Reverse Standoff (Typ): 20.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE36CA R0G P6KE%20SERIES_O2109.pdf
P6KE36CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO204AC
Voltage - Reverse Standoff (Typ): 30.8V
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE36CAHR0G P6KE%20SERIES_O2109.pdf
P6KE36CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO204AC
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Bidirectional Channels: 1
Base Part Number: P6KE36
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Power Line Protection: No
Power - Peak Pulse: 600W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55C3V6 A0G BZX55C2V0%20SERIES_D1610.pdf
BZX55C3V6 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR1040 C0G SR1020%20SERIES_L2104.pdf
SR1040 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR1040HC0G SR1020%20SERIES_L2104.pdf
SR1040HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMCJ54A V7G SMCJ%20SERIES_Q1812.pdf
SMCJ54A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54V 87.1V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 18A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBS10HRCG MBS2%20SERIES_P2103.pdf
MBS10HRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 1kV
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBS10
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBS10 RCG MBS2%20SERIES_P2103.pdf
MBS10 RCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 800MA MBS
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 1kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBS10
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9902 Stücke - Preis und Lieferfrist anzeigen
BZW04-102 R0G BZW04%20SERIES_I15.pdf
BZW04-102 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-110B R1G BZW04%20SERIES_I15.pdf
BZW04-110B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 111V
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Current - Peak Pulse (10/1000µs): 2.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-11B R1G BZW04%20SERIES_I15.pdf
BZW04-11B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1V 18.2V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Peak Pulse (10/1000µs): 22A
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Voltage - Reverse Standoff (Typ): 11.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-128B R1G BZW04%20SERIES_I15.pdf
BZW04-128B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 207V DO204AL
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 128V
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Current - Peak Pulse (10/1000µs): 2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-136B R1G BZW04%20SERIES_I15.pdf
BZW04-136B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136V 219V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Voltage - Reverse Standoff (Typ): 136V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-13B R1G BZW04%20SERIES_I15.pdf
BZW04-13B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 21.2V DO204AL
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 19A
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Bidirectional Channels: 1
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-145B R1G BZW04%20SERIES_I15.pdf
BZW04-145B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 145V 234V DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 161V
Part Status: Active
Type: Zener
Voltage - Reverse Standoff (Typ): 145V
Bidirectional Channels: 1
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-14B R1G BZW04%20SERIES_I15.pdf
BZW04-14B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Voltage - Reverse Standoff (Typ): 13.6V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-154B R1G BZW04%20SERIES_J2104.pdf
BZW04-154B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO204AL
Voltage - Reverse Standoff (Typ): 154V
Bidirectional Channels: 1
Type: Zener
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW04-15B R1G BZW04%20SERIES_J2104.pdf
BZW04-15B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.2VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 16A
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 15.3V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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