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DBLS203GHC1G DBLS203GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Voltage - Peak Reverse (Max): 200 V
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS204G C1G DBLS204G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS204GHC1G DBLS204GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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DBLS205G C1G DBLS205G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS205GHC1G DBLS205GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Voltage - Peak Reverse (Max): 600 V
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DBLS206G C1G DBLS206G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS206GHC1G DBLS206GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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DBLS207G C1G DBLS207G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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DBLS207GHC1G DBLS207GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
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DBLS208G C1G DBLS208G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS208GHC1G DBLS208GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS209G C1G DBLS209G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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DBLS209GHC1G DBLS209GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_I15.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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GBL04 D2G GBL04 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
Produkt ist nicht verfügbar
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GBL04HD2G GBL04HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
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GBL06HD2G GBL06HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Produkt ist nicht verfügbar
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GBL08HD2G GBL08HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Produkt ist nicht verfügbar
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GBL10 D2G GBL10 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
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GBL10HD2G GBL10HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
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GBU1001 D2G GBU1001 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Diode Type: Single Phase
Produkt ist nicht verfügbar
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GBU1001HD2G GBU1001HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU1002 D2G GBU1002 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU1002HD2G GBU1002HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
Produkt ist nicht verfügbar
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GBU1003 D2G GBU1003 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1003HD2G GBU1003HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1004 D2G GBU1004 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1004HD2G GBU1004HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1005 D2G GBU1005 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1005HD2G GBU1005HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1006HD2G GBU1006HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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GBU1007HD2G GBU1007HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Produkt ist nicht verfügbar
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GBU15L05 D2G GBU15L05 D2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GBU15L05HD2G GBU15L05HD2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
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GBU15L06 D2G GBU15L06 D2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GBU15L06HD2G GBU15L06HD2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
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GBU401 D2G GBU401 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU401HD2G GBU401HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU402 D2G GBU402 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Produkt ist nicht verfügbar
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GBU402HD2G GBU402HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU403 D2G GBU403 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
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GBU403HD2G GBU403HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
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GBU404 D2G GBU404 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
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GBU404HD2G GBU404HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
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GBU405HD2G GBU405HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
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GBU406HD2G GBU406HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBU
Produkt ist nicht verfügbar
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GBU407HD2G GBU407HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GBU604 D2G GBU604 D2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBU
Produkt ist nicht verfügbar
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GBU604HD2G GBU604HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU605HD2G GBU605HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
Produkt ist nicht verfügbar
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GBU606HD2G GBU606HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU801HD2G GBU801HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 8A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU805HD2G GBU805HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GBU807HD2G GBU807HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GP1004 C0G GP1004 C0G Taiwan Semiconductor Corporation GP1001%20SERIES_F1511.pdf Description: DIODE ARRAY GP 400V 10A TO220AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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GP1602HC0G GP1602HC0G Taiwan Semiconductor Corporation GP1601%20SERIES_G2104.pdf Description: DIODE ARRAY GP 100V 16A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL106G C1G HDBL106G C1G Taiwan Semiconductor Corporation HDBL101G%20SERIES_F15.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBL
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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HDBLS101G C1G HDBLS101G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HDBLS106G C1G HDBLS106G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HDBLS107G C1G HDBLS107G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HER1003G C0G HER1003G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS203GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS203GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Voltage - Peak Reverse (Max): 200 V
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS204G C1G DBLS201G%20SERIES_J2103.pdf
DBLS204G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS204GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS204GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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DBLS205G C1G DBLS201G%20SERIES_J2103.pdf
DBLS205G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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DBLS205GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS205GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Voltage - Peak Reverse (Max): 600 V
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DBLS206G C1G DBLS201G%20SERIES_J2103.pdf
DBLS206G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS206GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS206GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS207G C1G DBLS201G%20SERIES_J2103.pdf
DBLS207G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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DBLS207GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS207GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS208G C1G DBLS201G%20SERIES_J2103.pdf
DBLS208G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS208GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS208GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS209G C1G DBLS201G%20SERIES_J2103.pdf
DBLS209G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
Produkt ist nicht verfügbar
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DBLS209GHC1G DBLS201G%20SERIES_I15.pdf
DBLS209GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
Produkt ist nicht verfügbar
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GBL04 D2G GBL005%20SERIES_J15.pdf
GBL04 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
Produkt ist nicht verfügbar
Mindestbestellmenge: 10800 Stücke
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GBL04HD2G GBL005%20SERIES_K2103.pdf
GBL04HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
Produkt ist nicht verfügbar
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GBL06HD2G GBL005%20SERIES_K2103.pdf
GBL06HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Produkt ist nicht verfügbar
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GBL08HD2G GBL005%20SERIES_K2103.pdf
GBL08HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Produkt ist nicht verfügbar
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GBL10 D2G GBL005%20SERIES_K2103.pdf
GBL10 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
auf Bestellung 1135 Stücke:
Lieferzeit 10-14 Tag (e)
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GBL10HD2G GBL005%20SERIES_K2103.pdf
GBL10HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Produkt ist nicht verfügbar
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GBU1001 D2G GBU1001%20SERIES_M2103.pdf
GBU1001 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Diode Type: Single Phase
Produkt ist nicht verfügbar
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GBU1001HD2G GBU1001%20SERIES_M2103.pdf
GBU1001HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU1002 D2G GBU1001%20SERIES_M2103.pdf
GBU1002 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU1002HD2G GBU1001%20SERIES_K1705.pdf
GBU1002HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Produkt ist nicht verfügbar
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GBU1003 D2G GBU1001%20SERIES_K1705.pdf
GBU1003 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
Produkt ist nicht verfügbar
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GBU1003HD2G GBU1001%20SERIES_K1705.pdf
GBU1003HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
Produkt ist nicht verfügbar
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GBU1004 D2G GBU1001%20SERIES_K1705.pdf
GBU1004 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Produkt ist nicht verfügbar
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GBU1004HD2G GBU1001%20SERIES_K1705.pdf
GBU1004HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Produkt ist nicht verfügbar
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GBU1005 D2G GBU1001%20SERIES_K1705.pdf
GBU1005 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
Produkt ist nicht verfügbar
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GBU1005HD2G GBU1001%20SERIES_K1705.pdf
GBU1005HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
Produkt ist nicht verfügbar
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GBU1006HD2G GBU1001%20SERIES_M2103.pdf
GBU1006HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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GBU1007HD2G GBU1001%20SERIES_K1705.pdf
GBU1007HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Produkt ist nicht verfügbar
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GBU15L05 D2G GBU15L05%20SERIES_C2103.pdf
GBU15L05 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU15L05HD2G GBU15L05%20SERIES_C2103.pdf
GBU15L05HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU15L06 D2G GBU15L05%20SERIES_C2103.pdf
GBU15L06 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU15L06HD2G GBU15L05%20SERIES_C2103.pdf
GBU15L06HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Produkt ist nicht verfügbar
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GBU401 D2G GBU401%20SERIES_M2103.pdf
GBU401 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU401HD2G GBU401%20SERIES_M2103.pdf
GBU401HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU402 D2G GBU401%20SERIES_M2103.pdf
GBU402 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Produkt ist nicht verfügbar
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GBU402HD2G GBU401%20SERIES_M2103.pdf
GBU402HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU403 D2G GBU401%20SERIES_M2103.pdf
GBU403 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Produkt ist nicht verfügbar
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GBU403HD2G GBU401%20SERIES_K1705.pdf
GBU403HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Produkt ist nicht verfügbar
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GBU404 D2G GBU401%20SERIES_K1705.pdf
GBU404 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Produkt ist nicht verfügbar
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GBU404HD2G GBU401%20SERIES_K1705.pdf
GBU404HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Produkt ist nicht verfügbar
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GBU405HD2G GBU401%20SERIES_K1705.pdf
GBU405HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Produkt ist nicht verfügbar
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GBU406HD2G GBU401%20SERIES_K1705.pdf
GBU406HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Produkt ist nicht verfügbar
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GBU407HD2G GBU401%20SERIES_K1705.pdf
GBU407HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU604 D2G GBU601%20SERIES_L1705.pdf
GBU604 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A GBU
Produkt ist nicht verfügbar
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GBU604HD2G GBU601%20SERIES_N2103.pdf
GBU604HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU605HD2G GBU601%20SERIES_L1705.pdf
GBU605HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Produkt ist nicht verfügbar
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GBU606HD2G GBU601%20SERIES_N2103.pdf
GBU606HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU801HD2G GBU801%20SERIES_M2103.pdf
GBU801HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 8A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU805HD2G GBU801%20SERIES_K1705.pdf
GBU805HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU807HD2G GBU801%20SERIES_K1705.pdf
GBU807HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GP1004 C0G GP1001%20SERIES_F1511.pdf
GP1004 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 10A TO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GP1602HC0G GP1601%20SERIES_G2104.pdf
GP1602HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL106G C1G HDBL101G%20SERIES_F15.pdf
HDBL106G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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HDBLS101G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS101G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HDBLS106G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS106G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HDBLS107G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS107G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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HER1003G C0G
HER1003G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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