Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (62174) > Seite 1032 nach 1037
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| TSM60NB380CP ROG | TAIWAN SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK Power dissipation: 83W Gate charge: 19.4nC Polarisation: unipolar Drain current: 6A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: DPAK On-state resistance: 0.38Ω Mounting: SMD |
Produkt ist nicht verfügbar |
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GBU606 D2G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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1.5KE91CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 125V Breakdown voltage: 91V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM4425CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 64nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SS115 R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
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SS115L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: subSMA Kind of package: reel; tape Max. forward impulse current: 30A |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C6V2 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1968 Stücke: Lieferzeit 14-21 Tag (e) |
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TS1935BCX5 RFG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.6...5.5V DC Output voltage: 3...27V DC Output current: 1.9A Case: SOT25 Mounting: SMD Frequency: 1.2MHz Topology: boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Duty cycle factor: 0...87% |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| TESD5V0V4UA RDG | TAIWAN SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 95W Mounting: SMD Case: 2510P10 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Application: Ethernet; USB |
Produkt ist nicht verfügbar |
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Zener current: 2.5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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BZY55B15 RYG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: 0805 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 819 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C75 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 75V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 329 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52B7V5S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 0.9µA |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB200CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 471 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB200CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 14A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P6KE82A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4775 Stücke: Lieferzeit 14-21 Tag (e) |
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TESDU24V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape Type of diode: TVS Peak pulse power dissipation: 47W Max. off-state voltage: 24V Breakdown voltage: 25V Semiconductor structure: bidirectional Case: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZT52C30 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C33 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C36 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Zener current: 60mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 20µA |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB43CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.6A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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TS78L05CS RLG | TAIWAN SEMICONDUCTOR |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.1A Case: SOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 5.8...20V Manufacturer series: TS78L00 |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM4424CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8 Case: SOP8 Mounting: SMD On-state resistance: 30mΩ Gate charge: 11.2nC Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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BZX84C3V9 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2309CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB220CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.9A Breakdown voltage: 220V Max. off-state voltage: 185V |
Produkt ist nicht verfügbar |
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P6SMB220CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.9A Breakdown voltage: 220V Max. off-state voltage: 185V |
Produkt ist nicht verfügbar |
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TSF40H200C C0G | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 250A Max. forward voltage: 0.8V |
Produkt ist nicht verfügbar |
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TS5213CX533 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 3.3V Output current: 80mA Case: SOT23-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: TS5213 |
Produkt ist nicht verfügbar |
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TS5213CX550 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 5V Output current: 80mA Case: SOT23-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: TS5213 |
Produkt ist nicht verfügbar |
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TS78L05CX RFG | TAIWAN SEMICONDUCTOR |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOT23; SMD; 0÷150°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 5.8...20V Manufacturer series: TS78L00 |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
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BZV55B7V5 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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BZY55B7V5 RBG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: 0805 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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ABS6 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; ABS; SMT Max. forward impulse current: 30A Load current: 1A Kind of package: reel; tape Electrical mounting: SMT Max. off-state voltage: 0.6kV Case: ABS Type of bridge rectifier: single-phase |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB10A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 43A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Case: SMB Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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P6SMB10CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 43A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB10CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 43A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB220CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.9A Breakdown voltage: 220V Max. off-state voltage: 185V |
Produkt ist nicht verfügbar |
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| TSM60N1R4CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK Case: IPAK Mounting: THT Type of transistor: N-MOSFET On-state resistance: 1.4Ω Gate-source voltage: ±30V Power dissipation: 38W Gate charge: 7.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
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| TSM60N1R4CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; DPAK Case: DPAK Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 1.4Ω Gate-source voltage: ±30V Power dissipation: 38W Gate charge: 7.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
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| TSM60N380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60N380CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM60N380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 20.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM60N900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM60N900CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60NB099CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 62nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM60NB099CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 298W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 298W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 62nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60NB190CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM60NB190CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 150.6W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BZX55C27 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
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TS432BCX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...70°C Maximum output current: 0.1A Type of integrated circuit: voltage reference source Reference voltage: 1.24V Operating voltage: 1.24...16V Tolerance: ±0.5% |
Produkt ist nicht verfügbar |
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BZX84C4V7 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
auf Bestellung 309 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLD5S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Peak pulse power dissipation: 3.6kW Max. off-state voltage: 10V Semiconductor structure: unidirectional Leakage current: 15µA Case: DO218AB Type of diode: TVS Breakdown voltage: 11.1...12.3V Max. forward impulse current: 212A |
Produkt ist nicht verfügbar |
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| TLD6S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Peak pulse power dissipation: 4.6kW Max. off-state voltage: 10V Semiconductor structure: unidirectional Leakage current: 15µA Case: DO218AB Type of diode: TVS Breakdown voltage: 11.1...12.3V Max. forward impulse current: 271A |
Produkt ist nicht verfügbar |
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| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Peak pulse power dissipation: 6.6kW Max. off-state voltage: 10V Semiconductor structure: unidirectional Leakage current: 15µA Case: DO218AB Type of diode: TVS Breakdown voltage: 11.1...12.3V Max. forward impulse current: 388A |
Produkt ist nicht verfügbar |
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RS1B M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
| TSM60NB380CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Produkt ist nicht verfügbar
| GBU606 D2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| 1.5KE91CA R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 180+ | 0.4 EUR |
| TSM4425CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SS115 R2 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
| SS115L R2 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 335+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| BZX55C6V2 R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| BZX55C6V2 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 334+ | 0.21 EUR |
| 511+ | 0.14 EUR |
| 749+ | 0.096 EUR |
| 987+ | 0.073 EUR |
| 1330+ | 0.054 EUR |
| 1493+ | 0.048 EUR |
| 1968+ | 0.036 EUR |
| TS1935BCX5 RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.92 EUR |
| 42+ | 1.73 EUR |
| 53+ | 1.36 EUR |
| 56+ | 1.29 EUR |
| TESD5V0V4UA RDG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 95W
Mounting: SMD
Case: 2510P10
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 95W
Mounting: SMD
Case: 2510P10
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Produkt ist nicht verfügbar
| BZX55C47 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Zener current: 2.5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Zener current: 2.5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 940+ | 0.076 EUR |
| BZY55B15 RYG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 819 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| BZT52C75 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)| BZT52B7V5S RRG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| 830+ | 0.086 EUR |
| P6SMB200CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 471 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 253+ | 0.28 EUR |
| 268+ | 0.27 EUR |
| P6SMB200CAHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TSM190N08CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| P6KE82A R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 560+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| TESDU24V RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BZT52C30 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 983 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| 975+ | 0.074 EUR |
| BZT52C33 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 660+ | 0.11 EUR |
| BZT52C36 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| 945+ | 0.076 EUR |
| BZX85C3V9 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Zener current: 60mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Zener current: 60mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| P6SMB43CA M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| TS78L05CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| TSM4424CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8
Case: SOP8
Mounting: SMD
On-state resistance: 30mΩ
Gate charge: 11.2nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8
Case: SOP8
Mounting: SMD
On-state resistance: 30mΩ
Gate charge: 11.2nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| BZX84C3V9 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)| TSM2309CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 117+ | 0.61 EUR |
| 147+ | 0.49 EUR |
| 182+ | 0.39 EUR |
| 275+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| P6SMB220CA M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Produkt ist nicht verfügbar
| P6SMB220CA R5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Produkt ist nicht verfügbar
| TSF40H200C C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
| TS5213CX533 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5213
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5213
Produkt ist nicht verfügbar
| TS5213CX550 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5213
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5213
Produkt ist nicht verfügbar
| TS78L05CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOT23; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOT23; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.41 EUR |
| 194+ | 0.37 EUR |
| 265+ | 0.27 EUR |
| 281+ | 0.25 EUR |
| BZV55B7V5 L1G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| BZY55B7V5 RBG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| 830+ | 0.086 EUR |
| ABS6 RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; ABS; SMT
Max. forward impulse current: 30A
Load current: 1A
Kind of package: reel; tape
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Case: ABS
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; ABS; SMT
Max. forward impulse current: 30A
Load current: 1A
Kind of package: reel; tape
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Case: ABS
Type of bridge rectifier: single-phase
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.39 EUR |
| P6SMB10A M4G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| P6SMB10CA M4G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB10CA R5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB220CAHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Produkt ist nicht verfügbar
| TSM60N1R4CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK
Case: IPAK
Mounting: THT
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Gate-source voltage: ±30V
Power dissipation: 38W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK
Case: IPAK
Mounting: THT
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Gate-source voltage: ±30V
Power dissipation: 38W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 600V
Produkt ist nicht verfügbar
| TSM60N1R4CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Gate-source voltage: ±30V
Power dissipation: 38W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 600V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Gate-source voltage: ±30V
Power dissipation: 38W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 600V
Produkt ist nicht verfügbar
| TSM60N380CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60N380CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60N380CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60N900CH C5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60N900CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60N900CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60NB099CF C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60NB099CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 298W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 298W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 298W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 298W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60NB190CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM60NB190CZ C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BZX55C27 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| TS432BCX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...70°C
Maximum output current: 0.1A
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Operating voltage: 1.24...16V
Tolerance: ±0.5%
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...70°C
Maximum output current: 0.1A
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Operating voltage: 1.24...16V
Tolerance: ±0.5%
Produkt ist nicht verfügbar
| BZX84C4V7 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 309+ | 0.23 EUR |
| TLD5S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Produkt ist nicht verfügbar
| TLD6S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Produkt ist nicht verfügbar
| TLD8S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 15µA
Case: DO218AB
Type of diode: TVS
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Produkt ist nicht verfügbar
| RS1B M2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar