Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (62227) > Seite 1034 nach 1038
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 3.3V Output current: 0.8A Case: TO220 Mounting: THT Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 8.3...26V Manufacturer series: TS2940 |
Produkt ist nicht verfügbar |
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TSM260P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 19.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 5V Output current: 0.8A Case: TO220 Mounting: THT Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 10...26V Manufacturer series: TS2940 |
Produkt ist nicht verfügbar |
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BZT52B3V3-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 3.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52B3V3S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 4.5µA |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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S3M V6G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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TESDU5V0 RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape Type of diode: TVS Peak pulse power dissipation: 75W Max. off-state voltage: 5V Breakdown voltage: 5.1V Semiconductor structure: bidirectional Case: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
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| TESD5V0L1UC RJG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape Kind of package: reel; tape Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.1µA Case: DFN1006-2 Type of diode: TVS Mounting: SMD Breakdown voltage: 6...9.8V Max. forward impulse current: 3A Peak pulse power dissipation: 100W |
Produkt ist nicht verfügbar |
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SMBJ5V0A-TSC | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLD5S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 3.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 74A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TLD6S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 95A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TLD8S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 136A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZS55C5V6 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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TSM4436CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBS6 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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MBS2 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SD103CW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123 Mounting: SMD Max. forward impulse current: 1.5A Semiconductor structure: single diode Load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 20V Case: SOD123 Type of diode: Schottky rectifying |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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B0540W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape Capacitance: 170pF Max. off-state voltage: 40V Max. forward voltage: 0.62V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Power dissipation: 0.41W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123 |
auf Bestellung 1529 Stücke: Lieferzeit 14-21 Tag (e) |
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TS5204CY50 RMG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4% Operating temperature: -40...125°C Case: SOT89 Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: TS5204 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Tolerance: ±4% Output voltage: 5V Output current: 80mA Voltage drop: 0.6V Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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| TSM480P06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -13A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.4nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM680P06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 20W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 16.4nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BZS55C5V1 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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TSM650P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 65mΩ Mounting: SMD Gate charge: 6.4nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM650P03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.6A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhanced |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2328CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.5A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 11.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhanced |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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TS1117BCP33 ROG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.5V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...12V Manufacturer series: TS1117B |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1AL R2 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Capacitance: 10pF Case: subSMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM210N02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM085P03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM089N08LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Power dissipation: 17W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 8.9mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SK84C V7G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMC Kind of package: reel; tape Max. forward impulse current: 150A |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TSM4925DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.1A Power dissipation: 1.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P6KE8.2CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO15 Semiconductor structure: bidirectional Leakage current: 0.2mA Max. off-state voltage: 7.02V Breakdown voltage: 8.2V Max. forward impulse current: 50A Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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DBL104G C1 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT Case: DBL Kind of package: tube Max. forward impulse current: 40A Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 1A Type of bridge rectifier: single-phase |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM126CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 800Ω Mounting: SMD Gate charge: 1.18nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BZT52C9V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.45µA |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM033NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 77nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
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| TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 79nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Case: SOP8 Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 6mΩ Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 30V |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 105nC Kind of channel: enhanced |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM051N04LCP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM05N03CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7nC Kind of channel: enhanced |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5232B RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 5670 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMA27A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; DO214AC; reel,tape Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Max. off-state voltage: 23.1V Semiconductor structure: unidirectional Leakage current: 1µA Case: DO214AC Type of diode: TVS Tolerance: ±5% Breakdown voltage: 27V Max. forward impulse current: 11A |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5SMC36CA V6G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 29.1V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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1PGSMB5926 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 11V; 136mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SMB Leakage current: 1µA Power dissipation: 3W Kind of package: reel; tape Tolerance: ±5% Zener current: 136mA Zener voltage: 11V |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB43A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.6A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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| TLD6S33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 86A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TLD6S43AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 66A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TSM2305CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 55mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM2306CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 7nC Kind of channel: enhanced |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2307CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM2308CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 3.99nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 33mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM2318CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.9A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM280NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| TS2940CZ33 C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
Produkt ist nicht verfügbar
| TSM260P02CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TS2940CZ50 C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
Produkt ist nicht verfügbar
| BZT52B3V3-G RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 375+ | 0.19 EUR |
| 680+ | 0.11 EUR |
| 850+ | 0.084 EUR |
| 945+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| BZT52B3V3S RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 0.096 EUR |
| 840+ | 0.086 EUR |
| S3M V6G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| TESDU5V0 RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 430+ | 0.17 EUR |
| 490+ | 0.15 EUR |
| 505+ | 0.14 EUR |
| TESD5V0L1UC RJG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
Produkt ist nicht verfügbar
| SMBJ5V0A-TSC |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 245+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 340+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| TLD5S30AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TLD6S30AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 95A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 95A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TLD8S30AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 136A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 136A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BZS55C5V6 RXG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| TSM4436CS RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBS6 RCG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 150+ | 0.47 EUR |
| MBS2 RCG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 215+ | 0.33 EUR |
| 275+ | 0.26 EUR |
| 300+ | 0.24 EUR |
| SMCJ36A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SD103CW RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123
Mounting: SMD
Max. forward impulse current: 1.5A
Semiconductor structure: single diode
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Case: SOD123
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123
Mounting: SMD
Max. forward impulse current: 1.5A
Semiconductor structure: single diode
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Case: SOD123
Type of diode: Schottky rectifying
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 545+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| 760+ | 0.094 EUR |
| B0540W RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Capacitance: 170pF
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Capacitance: 170pF
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 575+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 824+ | 0.087 EUR |
| 873+ | 0.082 EUR |
| TS5204CY50 RMG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT89
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT89
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
| TSM480P06CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM680P06CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BZS55C5V1 RXG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| TSM650P02CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM650P03CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 130+ | 0.54 EUR |
| TSM2328CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM320N03CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 115+ | 0.63 EUR |
| 136+ | 0.53 EUR |
| TS1117BCP33 ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Manufacturer series: TS1117B
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Manufacturer series: TS1117B
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 0.89 EUR |
| 110+ | 0.65 EUR |
| 120+ | 0.6 EUR |
| RS1AL R2 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.83 EUR |
| TSM210N02CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM085P03CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM089N08LCR RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SK84C V7G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 150A
auf Bestellung 742 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 133+ | 0.54 EUR |
| 148+ | 0.48 EUR |
| 170+ | 0.42 EUR |
| 180+ | 0.4 EUR |
| P6SMB15CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TSM4925DCS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| P6KE8.2CA R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 50A
Peak pulse power dissipation: 0.6kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 50A
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| DBL104G C1 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Type of bridge rectifier: single-phase
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 180+ | 0.41 EUR |
| 190+ | 0.37 EUR |
| TSM126CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BZT52C9V1 RHG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 0.096 EUR |
| 1025+ | 0.07 EUR |
| 1290+ | 0.056 EUR |
| 1430+ | 0.05 EUR |
| 1515+ | 0.047 EUR |
| TSM033NB04CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Produkt ist nicht verfügbar
| TSM033NB04LCR RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Produkt ist nicht verfügbar
| TSM042N03CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.76 EUR |
| TSM045NB06CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM048NB06LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 17.88 EUR |
| TSM051N04LCP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM05N03CW RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 93+ | 0.78 EUR |
| 122+ | 0.59 EUR |
| 133+ | 0.54 EUR |
| MMSZ5232B RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 5670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 740+ | 0.097 EUR |
| 800+ | 0.09 EUR |
| 955+ | 0.075 EUR |
| 1010+ | 0.071 EUR |
| 3000+ | 0.068 EUR |
| P4SMA27A M2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; DO214AC; reel,tape
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO214AC
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 27V
Max. forward impulse current: 11A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; DO214AC; reel,tape
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO214AC
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 27V
Max. forward impulse current: 11A
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 140+ | 0.51 EUR |
| 1.5SMC36CA V6G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.49 EUR |
| 1PGSMB5926 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 136mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 136mA
Zener voltage: 11V
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 136mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 136mA
Zener voltage: 11V
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1.01 EUR |
| 101+ | 0.71 EUR |
| 134+ | 0.54 EUR |
| 168+ | 0.43 EUR |
| P6SMB43A M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| TLD6S33AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TLD6S43AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TSM2305CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM2306CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.76 EUR |
| TSM2307CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM2308CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM2312CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM2318CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM280NB06LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Produkt ist nicht verfügbar