HER108G Taiwan Semiconductor
auf Bestellung 10881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.23 EUR |
| 1000+ | 0.14 EUR |
| 10000+ | 0.12 EUR |
| 25000+ | 0.11 EUR |
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Technische Details HER108G Taiwan Semiconductor
Description: DIODE GEN PURP 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote HER108G nach Preis ab 0.06 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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HER108G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 4983 Stücke: Lieferzeit 10-14 Tag (e) |
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| HER108G | Hersteller : LGE |
1A; 1000V; packaging: ammo; HER108G DO41 LGE DP HER108G LGE Anzahl je Verpackung: 100 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| HER108G | Hersteller : Rectron |
Diode Switching 1KV 1A 2-Pin DO-41 |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| HER108G | Hersteller : Yangjie Technology |
Випрямний ультрашвидкий діод вивідний; Uзвор, В = 1 000; Io, А = 1; Uf (max), В = 1,7; If, A = 1; Тексп, °C = -55...+150; DO-41 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| HER108G | Hersteller : Taiwan Semiconductor |
Rectifier Diode Switching 1KV 1A 75ns 2-Pin DO-41 |
Produkt ist nicht verfügbar |
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HER108G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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HER108G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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HER108G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |