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CSD17575Q3T CSD17575Q3T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 108W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 23nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
56+1.29 EUR
65+1.12 EUR
69+1.04 EUR
100+1.02 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CSD17576Q5BT CSD17576Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17576q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Mounting: SMD
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Drain current: 100A
Drain-source voltage: 30V
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 25nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 477 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
60+1.20 EUR
65+1.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CSD17577Q3AT CSD17577Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17577q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Mounting: SMD
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Drain current: 35A
Drain-source voltage: 30V
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 12nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 161 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.70 EUR
50+1.43 EUR
69+1.04 EUR
73+0.99 EUR
250+0.94 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT CSD17578Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Mounting: SMD
On-state resistance: 8.2mΩ
Type of transistor: N-MOSFET
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 7.9nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 453 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.32 EUR
63+1.14 EUR
75+0.96 EUR
79+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q5AT CSD17579Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Mounting: SMD
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET
Drain current: 25A
Drain-source voltage: 30V
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 5.4nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
57+1.26 EUR
61+1.17 EUR
66+1.09 EUR
100+1.06 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
CSD17581Q3AT CSD17581Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17581q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm
Case: VSONP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 20nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1288 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
68+1.06 EUR
95+0.76 EUR
100+0.72 EUR
104+0.69 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
CSD17585F5T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17585f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.9A; Idm: 34A; 1.4W; PICOSTAR3
Mounting: SMD
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Drain current: 5.9A
Drain-source voltage: 30V
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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CSD18502KCS CSD18502KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18502kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 259W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
35+2.04 EUR
37+1.94 EUR
50+1.86 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CSD18502Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18502q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18503Q5AT CSD18503Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18503q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 640 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
41+1.77 EUR
69+1.04 EUR
73+0.99 EUR
500+0.97 EUR
1250+0.94 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
CSD18504KCS CSD18504KCS TEXAS INSTRUMENTS slps365 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.19 EUR
44+1.63 EUR
56+1.29 EUR
59+1.22 EUR
100+1.19 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
CSD18504Q5AT CSD18504Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18504q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18509Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18509q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT CSD18510KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 2.6mΩ
Gate charge: 119nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.22 EUR
29+2.53 EUR
30+2.40 EUR
50+2.39 EUR
100+2.30 EUR
Mindestbestellmenge: 23
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CSD18510Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 0.79mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511Q5AT CSD18511Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 104W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18512Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT CSD18514Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 872 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.25 EUR
43+1.69 EUR
55+1.30 EUR
59+1.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
CSD18531Q5A CSD18531Q5A TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1974 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
43+1.70 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
CSD18531Q5AT CSD18531Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18532KCS CSD18532KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 250W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.23 EUR
42+1.73 EUR
44+1.64 EUR
100+1.57 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD18532NQ5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18532Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18533KCS CSD18533KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18533Q5AT CSD18533Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1150 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.10 EUR
51+1.42 EUR
54+1.33 EUR
57+1.26 EUR
100+1.22 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 164A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT CSD18534Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 936 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.37 EUR
36+2.03 EUR
46+1.59 EUR
48+1.50 EUR
100+1.49 EUR
250+1.44 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KCS CSD18535KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 63nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.92 EUR
30+2.46 EUR
31+2.33 EUR
100+2.27 EUR
500+2.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTTT CSD18535KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KCS CSD18536KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 83nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.96 EUR
16+4.75 EUR
20+3.63 EUR
21+3.43 EUR
100+3.30 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT CSD18536KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 2.2mΩ
Gate charge: 108nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.03 EUR
17+4.36 EUR
18+4.12 EUR
50+3.96 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CSD18537NKCS CSD18537NKCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nkcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 232 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.87 EUR
55+1.30 EUR
72+1.00 EUR
76+0.94 EUR
500+0.92 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
CSD18537NQ5AT CSD18537NQ5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nq5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 75W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 75W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
44+1.66 EUR
59+1.22 EUR
62+1.16 EUR
250+1.12 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
CSD18540Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18540q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18541F5T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18541f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KCS CSD18542KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.15 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 5.1mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1825 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.26 EUR
40+1.82 EUR
42+1.72 EUR
50+1.64 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
CSD18543Q3AT CSD18543Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 66W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Case: VSONP8
Drain-source voltage: 60V
Drain current: 35A
On-state resistance: 8.1mΩ
Power dissipation: 66W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 11.1nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
49+1.47 EUR
63+1.14 EUR
67+1.07 EUR
250+1.03 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 464 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
100+1.17 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS CSD19501KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Case: TO220-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 217W
Polarisation: unipolar
Gate charge: 38nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.63 EUR
35+2.10 EUR
48+1.50 EUR
51+1.42 EUR
500+1.37 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
CSD19502Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19502q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19503KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19503kcs CSD19503KCS THT N channel transistors
auf Bestellung 660 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
52+1.40 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KCS CSD19505KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 300W; TO220-3
Case: TO220-3
Drain-source voltage: 80V
Drain current: 150A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 76nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.42 EUR
37+1.97 EUR
39+1.86 EUR
500+1.83 EUR
750+1.79 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506kcs CSD19506KCS THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.45 EUR
15+4.79 EUR
50+4.69 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt CSD19506KTT SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt CSD19506KTTT SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19531KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531kcs CSD19531KCS THT N channel transistors
auf Bestellung 161 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.43 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD19531Q5AT CSD19531Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 125W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Technology: NexFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
32+2.30 EUR
40+1.82 EUR
42+1.72 EUR
250+1.64 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTT CSD19532KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.97 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
250+1.92 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
25+2.93 EUR
31+2.33 EUR
33+2.20 EUR
50+2.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3
CSD17575Q3T
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 108W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 23nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.66 EUR
56+1.29 EUR
65+1.12 EUR
69+1.04 EUR
100+1.02 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CSD17576Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17576q5b
CSD17576Q5BT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Mounting: SMD
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Drain current: 100A
Drain-source voltage: 30V
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 25nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 477 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
60+1.20 EUR
65+1.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CSD17577Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17577q3a
CSD17577Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Mounting: SMD
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Drain current: 35A
Drain-source voltage: 30V
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 12nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 161 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.70 EUR
50+1.43 EUR
69+1.04 EUR
73+0.99 EUR
250+0.94 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a
CSD17578Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Mounting: SMD
On-state resistance: 8.2mΩ
Type of transistor: N-MOSFET
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 7.9nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 453 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
55+1.32 EUR
63+1.14 EUR
75+0.96 EUR
79+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q5a
CSD17579Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Mounting: SMD
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET
Drain current: 25A
Drain-source voltage: 30V
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 5.4nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
49+1.49 EUR
57+1.26 EUR
61+1.17 EUR
66+1.09 EUR
100+1.06 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
CSD17581Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17581q3a
CSD17581Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm
Case: VSONP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 20nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1288 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
45+1.62 EUR
68+1.06 EUR
95+0.76 EUR
100+0.72 EUR
104+0.69 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
CSD17585F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17585f5
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.9A; Idm: 34A; 1.4W; PICOSTAR3
Mounting: SMD
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Drain current: 5.9A
Drain-source voltage: 30V
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18502KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18502kcs
CSD18502KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 259W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.82 EUR
35+2.04 EUR
37+1.94 EUR
50+1.86 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CSD18502Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18502q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18503Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18503q5a
CSD18503Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 640 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.66 EUR
41+1.77 EUR
69+1.04 EUR
73+0.99 EUR
500+0.97 EUR
1250+0.94 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
CSD18504KCS slps365
CSD18504KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.19 EUR
44+1.63 EUR
56+1.29 EUR
59+1.22 EUR
100+1.19 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
CSD18504Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18504q5a
CSD18504Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18509Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18509q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510kcs
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
CSD18510KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 2.6mΩ
Gate charge: 119nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.22 EUR
29+2.53 EUR
30+2.40 EUR
50+2.39 EUR
100+2.30 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 0.79mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511kcs
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18511Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18511q5a
CSD18511Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 104W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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CSD18512Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a
CSD18514Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 872 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.25 EUR
43+1.69 EUR
55+1.30 EUR
59+1.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
CSD18531Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a
CSD18531Q5A
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1974 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
43+1.70 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
CSD18531Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a
CSD18531Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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CSD18532KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532kcs
CSD18532KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 250W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.23 EUR
42+1.73 EUR
44+1.64 EUR
100+1.57 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD18532NQ5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18532Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18533KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533kcs
CSD18533KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533q5a
CSD18533Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.10 EUR
51+1.42 EUR
54+1.33 EUR
57+1.26 EUR
100+1.22 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534kcs
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 164A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
CSD18534Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 936 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.37 EUR
36+2.03 EUR
46+1.59 EUR
48+1.50 EUR
100+1.49 EUR
250+1.44 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535kcs
CSD18535KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 63nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.92 EUR
30+2.46 EUR
31+2.33 EUR
100+2.27 EUR
500+2.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt
CSD18535KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536kcs
CSD18536KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 83nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.96 EUR
16+4.75 EUR
20+3.63 EUR
21+3.43 EUR
100+3.30 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
CSD18536KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 2.2mΩ
Gate charge: 108nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.03 EUR
17+4.36 EUR
18+4.12 EUR
50+3.96 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CSD18537NKCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nkcs
CSD18537NKCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 232 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
39+1.87 EUR
55+1.30 EUR
72+1.00 EUR
76+0.94 EUR
500+0.92 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
CSD18537NQ5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nq5a
CSD18537NQ5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 75W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 75W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
44+1.66 EUR
59+1.22 EUR
62+1.16 EUR
250+1.12 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
CSD18540Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18540q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18541F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18541f5
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542kcs
CSD18542KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.15 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt
CSD18542KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 5.1mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1825 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.26 EUR
40+1.82 EUR
42+1.72 EUR
50+1.64 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
CSD18543Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a
CSD18543Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 66W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Case: VSONP8
Drain-source voltage: 60V
Drain current: 35A
On-state resistance: 8.1mΩ
Power dissipation: 66W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 11.1nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
63+1.14 EUR
67+1.07 EUR
250+1.03 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
CSD18563Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 464 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.79 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
100+1.17 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
CSD19501KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Case: TO220-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 217W
Polarisation: unipolar
Gate charge: 38nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.63 EUR
35+2.10 EUR
48+1.50 EUR
51+1.42 EUR
500+1.37 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
CSD19502Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19502q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19503KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19503kcs
Hersteller: TEXAS INSTRUMENTS
CSD19503KCS THT N channel transistors
auf Bestellung 660 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.96 EUR
52+1.40 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505kcs
CSD19505KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 300W; TO220-3
Case: TO220-3
Drain-source voltage: 80V
Drain current: 150A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 76nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.42 EUR
37+1.97 EUR
39+1.86 EUR
500+1.83 EUR
750+1.79 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19505KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506kcs
Hersteller: TEXAS INSTRUMENTS
CSD19506KCS THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.45 EUR
15+4.79 EUR
50+4.69 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt
Hersteller: TEXAS INSTRUMENTS
CSD19506KTT SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19506KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt
Hersteller: TEXAS INSTRUMENTS
CSD19506KTTT SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19531KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531kcs
Hersteller: TEXAS INSTRUMENTS
CSD19531KCS THT N channel transistors
auf Bestellung 161 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.43 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD19531Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531q5a
CSD19531Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 125W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Technology: NexFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.52 EUR
32+2.30 EUR
40+1.82 EUR
42+1.72 EUR
250+1.64 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt
CSD19532KTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.97 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
250+1.92 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt
CSD19532KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.19 EUR
25+2.93 EUR
31+2.33 EUR
33+2.20 EUR
50+2.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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