Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 94 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
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TB67S149FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER UNIPOLAR 48WQFN |
auf Bestellung 3354 Stücke: Lieferzeit 21-28 Tag (e) |
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TC78H610FNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP Packaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 15V Supplier Device Package: 16-SSOP Motor Type - AC, DC: Brushed DC |
auf Bestellung 1940 Stücke: Lieferzeit 21-28 Tag (e) |
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TB2909FNG,EB | Toshiba Semiconductor and Storage |
Description: IC AMP CLASS AB MONO 3W 16HSSOP Packaging: Cut Tape (CT) Features: Mute, Short-Circuit and Thermal Protection, Standby Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 110°C (TA) Voltage - Supply: 6V ~ 16V Max Output Power x Channels @ Load: 3W x 1 @ 8Ohm Supplier Device Package: 16-HTSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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TB6633AFNG,C8EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP Packaging: Cut Tape (CT) Package / Case: 24-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Analog Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 5.5V ~ 22V Supplier Device Package: 24-SSOP Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
auf Bestellung 2071 Stücke: Lieferzeit 21-28 Tag (e) |
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TB62261FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48WQFN |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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TB62262FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48WQFN |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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TB67S142FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48WQFN |
auf Bestellung 7984 Stücke: Lieferzeit 21-28 Tag (e) |
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TB67S145FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48WQFN |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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TB67S149HG | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER UNIPOLAR 25HZIP |
Produkt ist nicht verfügbar |
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TL1WK-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NT1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NT1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NT1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5700K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1WK-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TCS40DLR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCS40DPR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
auf Bestellung 309000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCS40DLR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
auf Bestellung 63376 Stücke: Lieferzeit 21-28 Tag (e) |
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TCS40DPR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
auf Bestellung 312481 Stücke: Lieferzeit 21-28 Tag (e) |
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TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
auf Bestellung 5871 Stücke: Lieferzeit 21-28 Tag (e) |
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74LCX540FT(AE) | Toshiba Semiconductor and Storage | Description: IC INVERTER 8-INPUT 20TSSOP |
Produkt ist nicht verfügbar |
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74LCX541FT(AE) | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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74LCX573FT(AE) | Toshiba Semiconductor and Storage | Description: IC LATCH OCTAL D-TYPE 20TSSOP |
Produkt ist nicht verfügbar |
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74VHC125FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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74VHC139FT | Toshiba Semiconductor and Storage |
Description: IC DECODER/DEMUX 1X2:4 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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74VHC373FT(BJ) | Toshiba Semiconductor and Storage | Description: IC LATCH OCTAL D-TYPE 20TSSOP |
Produkt ist nicht verfügbar |
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2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 3A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 3A PW-MOLD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
auf Bestellung 3592 Stücke: Lieferzeit 21-28 Tag (e) |
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TPWR8503NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8DSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TPWR8503NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8DSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
auf Bestellung 8172 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR5AM11,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.1V 500MA 5DFNB |
Produkt ist nicht verfügbar |
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TCR5AM11,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.1V 500MA 5DFNB |
auf Bestellung 3587 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J133TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A UFM Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
auf Bestellung 81000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 12 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K337R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J133TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
auf Bestellung 86475 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 86257 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
auf Bestellung 9095 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
auf Bestellung 29467 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 19630 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 3943 Stücke: Lieferzeit 21-28 Tag (e) |
TB67S149FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48WQFN
Description: IC MOTOR DRIVER UNIPOLAR 48WQFN
auf Bestellung 3354 Stücke:
Lieferzeit 21-28 Tag (e)TC78H610FNG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - AC, DC: Brushed DC
auf Bestellung 1940 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.87 EUR |
10+ | 3.47 EUR |
25+ | 3.27 EUR |
100+ | 2.79 EUR |
250+ | 2.62 EUR |
500+ | 2.29 EUR |
1000+ | 1.9 EUR |
TB2909FNG,EB |
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS AB MONO 3W 16HSSOP
Packaging: Cut Tape (CT)
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 110°C (TA)
Voltage - Supply: 6V ~ 16V
Max Output Power x Channels @ Load: 3W x 1 @ 8Ohm
Supplier Device Package: 16-HTSSOP
Part Status: Active
Description: IC AMP CLASS AB MONO 3W 16HSSOP
Packaging: Cut Tape (CT)
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 110°C (TA)
Voltage - Supply: 6V ~ 16V
Max Output Power x Channels @ Load: 3W x 1 @ 8Ohm
Supplier Device Package: 16-HTSSOP
Part Status: Active
Produkt ist nicht verfügbar
TB6633AFNG,C8EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 2071 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.72 EUR |
10+ | 5.14 EUR |
25+ | 4.85 EUR |
100+ | 4.13 EUR |
250+ | 3.88 EUR |
500+ | 3.39 EUR |
1000+ | 2.81 EUR |
TB62261FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)TB62262FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)TB67S142FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 7984 Stücke:
Lieferzeit 21-28 Tag (e)TB67S145FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)TB67S149HG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Produkt ist nicht verfügbar
TL1WK-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1WK-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL1WK-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL1WK-NT1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
Description: LED LETERAS COOL WHT 5700K 2SMD
Produkt ist nicht verfügbar
TL1WK-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1WK-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1WK-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1WK-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL1WK-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL1WK-NT1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
Description: LED LETERAS COOL WHT 5700K 2SMD
Produkt ist nicht verfügbar
TL1WK-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1WK-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1WK-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1WK-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL1WK-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL1WK-NT1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
Description: LED LETERAS COOL WHT 5700K 2SMD
Produkt ist nicht verfügbar
TL1WK-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1WK-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TCS40DLR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
15000+ | 0.28 EUR |
30000+ | 0.27 EUR |
TCS40DPR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 309000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
15000+ | 0.28 EUR |
30000+ | 0.27 EUR |
TCS40DLR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 63376 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
37+ | 0.72 EUR |
42+ | 0.63 EUR |
50+ | 0.59 EUR |
100+ | 0.5 EUR |
500+ | 0.42 EUR |
1000+ | 0.35 EUR |
TCS40DPR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 312481 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
37+ | 0.72 EUR |
42+ | 0.63 EUR |
50+ | 0.59 EUR |
100+ | 0.5 EUR |
500+ | 0.42 EUR |
1000+ | 0.35 EUR |
TPHR8504PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.95 EUR |
TPHR8504PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 5871 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.5 EUR |
10+ | 3.73 EUR |
100+ | 2.96 EUR |
500+ | 2.51 EUR |
1000+ | 2.13 EUR |
2000+ | 2.02 EUR |
74LCX540FT(AE) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 8-INPUT 20TSSOP
Description: IC INVERTER 8-INPUT 20TSSOP
Produkt ist nicht verfügbar
74LCX541FT(AE) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
74LCX573FT(AE) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
74VHC125FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.32 EUR |
5000+ | 0.3 EUR |
74VHC139FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER/DEMUX 1X2:4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC DECODER/DEMUX 1X2:4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.26 EUR |
74VHC373FT(BJ) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
2SC6076(TE16L1,NV) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.49 EUR |
2SC6076(TE16L1,NV) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 3592 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.48 EUR |
21+ | 1.25 EUR |
100+ | 0.87 EUR |
500+ | 0.68 EUR |
1000+ | 0.55 EUR |
TPWR8503NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 3.16 EUR |
TPWR8004PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 3.17 EUR |
TPWR8503NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.18 EUR |
10+ | 6.45 EUR |
100+ | 5.18 EUR |
500+ | 4.26 EUR |
1000+ | 3.53 EUR |
2000+ | 3.28 EUR |
TPWR8004PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 8172 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.79 EUR |
10+ | 5.7 EUR |
100+ | 4.61 EUR |
500+ | 4.1 EUR |
1000+ | 3.51 EUR |
2000+ | 3.3 EUR |
TCR5AM11,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
TCR5AM11,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 3587 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.89 EUR |
32+ | 0.84 EUR |
100+ | 0.67 EUR |
250+ | 0.62 EUR |
500+ | 0.53 EUR |
1000+ | 0.41 EUR |
2500+ | 0.37 EUR |
SSM3J133TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
6000+ | 0.27 EUR |
9000+ | 0.25 EUR |
30000+ | 0.24 EUR |
75000+ | 0.23 EUR |
SSM6N56FE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.2 EUR |
8000+ | 0.19 EUR |
12000+ | 0.17 EUR |
28000+ | 0.16 EUR |
DF2B7M2SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B7SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.061 EUR |
DF2S6.8UCT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)DF2S6.8UFS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)SSM3K337R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
9000+ | 0.32 EUR |
SSM3J133TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 86475 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
32+ | 0.82 EUR |
100+ | 0.49 EUR |
500+ | 0.45 EUR |
1000+ | 0.31 EUR |
SSM6N56FE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 86257 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.14 EUR |
34+ | 0.79 EUR |
100+ | 0.4 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
2000+ | 0.2 EUR |
DF2B7M2SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
auf Bestellung 9095 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.54 EUR |
100+ | 0.26 EUR |
500+ | 0.22 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
5000+ | 0.12 EUR |
DF2B7SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 29467 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
80+ | 0.32 EUR |
164+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.092 EUR |
2000+ | 0.08 EUR |
5000+ | 0.074 EUR |
DF2S6.8UCT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 19630 Stücke:
Lieferzeit 21-28 Tag (e)DF2S6.8UFS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 3943 Stücke:
Lieferzeit 21-28 Tag (e)