Die Produkte vishay general semiconductor - diodes division

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BYG10Y-M3/TR BYG10Y-M3/TR BYG10D,G,J,K,M,Y.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SS210-E3/52T SS210-E3/52T ss29.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Schottky
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
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auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SS210-E3/5BT SS210-E3/5BT ss29.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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V10P20-M3/87A V10P20-M3/87A v10p20.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2.4A TO277A
Base Part Number: V10P20
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Current - Average Rectified (Io): 2.4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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auf Bestellung 69 Stücke
Lieferzeit 21-28 Tag (e)
VSKY05201006-G4-08 VSKY05201006-G4-08 vsky05201006.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHTKY 20V 500MA CLP10062L
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 20V
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Base Part Number: VSKY05201006
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V10P20-M3/86A V10P20-M3/86A v10p20.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
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auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.6 EUR
10+ 4.15 EUR
100+ 3.33 EUR
500+ 2.74 EUR
1.5KE6.8AHE3/51 1.5KE6.8AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 143A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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1N4749A-TAP 1N4749A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 24V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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auf Bestellung 5700 Stücke
Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4937-E3/73 1N4937-E3/73 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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1N4937GP-E3/73 1N4937GP-E3/73 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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auf Bestellung 1928 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
33+ 0.81 EUR
100+ 0.5 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
BZX55C5V6-TAP BZX55C5V6-TAP bzx55.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Tolerance: ±5%
Packaging: Cut Tape (CT)
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auf Bestellung 10331 Stücke
Lieferzeit 21-28 Tag (e)
48+ 0.55 EUR
55+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
5000+ 0.084 EUR
BZX85C15-TR BZX85C15-TR bzx85.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 15V 1.3W DO204AL
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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auf Bestellung 14774 Stücke
Lieferzeit 21-28 Tag (e)
26+ 1.01 EUR
31+ 0.84 EUR
100+ 0.45 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
2000+ 0.18 EUR
VS-MBR1545CT-M3 VS-MBR1545CT-M3 vs-mbr1535_45ct-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 7.5A TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 7.5A
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MBR1545CT801HE3/45 MBR1545CT801HE3/45 MBR(F,B)15H35CT%20-%2015H60CT.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AB
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
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MBR1545CT802HE3/45 MBR1545CT802HE3/45 MBR(F,B)15H35CT%20-%2015H60CT.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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VS-HFA15TB60S-M3 VS-HFA15TB60S-M3 vs-hfa15tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A D2PAK
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
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auf Bestellung 1740 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.28 EUR
10+ 2.95 EUR
100+ 2.3 EUR
500+ 1.9 EUR
1000+ 1.5 EUR
VS-HFA15TB60-1-M3 VS-HFA15TB60-1-M3 vs-hfa15tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A (DC)
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
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auf Bestellung 801 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 1.98 EUR
VS-HFA15TB60-M3 VS-HFA15TB60-M3 vs-hfa15tb60-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE FRED 600V 15A TO220AC
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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VS-HFA15TB60SL-M3 VS-HFA15TB60SL-M3 vs-hfa15tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A D2PAK
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
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VS-HFA15TB60SR-M3 VS-HFA15TB60SR-M3 vs-hfa15tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
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BZT52C18-E3-08 BZT52C18-E3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZT52C18-HE3-08 BZT52C18-HE3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZT52C10-E3-08 BZT52C10-E3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 10V 410MW SOD123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Packaging: Cut Tape (CT)
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auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
BZT52C10-E3-18 BZT52C10-E3-18 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 10V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZT52C10-HE3-08 BZT52C10-HE3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 10V 410MW SOD123
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
35+ 0.75 EUR
42+ 0.63 EUR
100+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
BZT52C3V3-E3-08 BZT52C3V3-E3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 410MW SOD123
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 410 mW
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auf Bestellung 14500 Stücke
Lieferzeit 21-28 Tag (e)
BZT52C3V3-G3-08 BZT52C3V3-G3-08 bzt52g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 410MW SOD123
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
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auf Bestellung 415 Stücke
Lieferzeit 21-28 Tag (e)
31+ 0.86 EUR
38+ 0.7 EUR
100+ 0.37 EUR
BZT52C3V3-HE3-18 BZT52C3V3-HE3-18 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
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BZT52C3V3-E3-18 BZT52C3V3-E3-18 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
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Lieferzeit 21-28 Tag (e)
SM6T27AHE3_A/H SM6T27AHE3_A/H sm6t.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 16A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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VTVS3V3GSMF-HM3-18 VTVS3V3GSMF-HM3-18 vtvs3v3asmf.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Voltage - Reverse Standoff (Typ): 3.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VTVS3V3
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
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TPSMA27AHE3_B/H TPSMA27AHE3_B/H tpsma.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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25+ 1.08 EUR
100+ 0.74 EUR
500+ 0.55 EUR
BAT46W-G3-08 BAT46W-G3-08 bat46w-g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 150MA SOD123
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA (DC)
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
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BAT46W-HE3-08 BAT46W-HE3-08 bat46wv.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA (DC)
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123
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ZMM5230B-13 ZMM5230B-13 ZMM5221B%20thru%20ZMM5267B.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-213AA (GL34)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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VS-MUR1620CT-M3 VS-MUR1620CT-M3 vs-mur1620ct-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE FRED 200V 8A TO220AB
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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VS-40CTQ150S-M-S1 Vishay General Semiconductor - Diodes Division Description: SCHOTTKY - D2PAK
Packaging: Tube
Part Status: Active
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1N4936GP-E3/73 1N4936GP-E3/73 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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24+ 1.09 EUR
32+ 0.83 EUR
100+ 0.52 EUR
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1000+ 0.27 EUR
BAS16-HE3-08 BAS16-HE3-08 bas16.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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44+ 0.6 EUR
49+ 0.54 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
SS26S-E3/5AT SS26S-E3/5AT ss26s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
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auf Bestellung 7314 Stücke
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23+ 1.14 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
SS26SHE3_B/I SS26SHE3_B/I ss26s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SM8S12AHE3_A/I SM8S12AHE3_A/I sm8s.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 12VWM 19.9VC DO218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 332A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
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BZD27C75P-E3-08 BZD27C75P-E3-08 bzd27series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 75V 800MW DO219AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 56V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 800mW
Voltage - Zener (Nom) (Vz): 75V
Base Part Number: BZD27C75
Packaging: Cut Tape (CT)
Part Status: Active
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auf Bestellung 29495 Stücke
Lieferzeit 21-28 Tag (e)
UF5402-E3/73 UF5402-E3/73 uf5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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16+ 1.69 EUR
19+ 1.43 EUR
100+ 1.07 EUR
500+ 0.84 EUR
SMBJ100AHE3_A/H SMBJ100AHE3_A/H smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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AZ23C3V3-E3-08 AZ23C3V3-E3-08 az23.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 300MW SOT23
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
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34+ 0.78 EUR
40+ 0.65 EUR
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500+ 0.23 EUR
1000+ 0.16 EUR
B340A-M3/61T B340A-M3/61T b330la.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
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B340A-E3/5AT B340A-E3/5AT b330la.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
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VS-GBPC2508W VS-GBPC2508W vs-gbpc25.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
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TLZ11C-GS08 TLZ11C-GS08 tlz.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 500MW SOD80
Voltage - Zener (Nom) (Vz): 11V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: TLZ11
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 40nA @ 10.28V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 500mW
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auf Bestellung 3358 Stücke
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BZX85C3V0-TR BZX85C3V0-TR bzx85.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3V 1.3W DO41
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
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26+ 1.01 EUR
31+ 0.84 EUR
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500+ 0.3 EUR
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2000+ 0.18 EUR
1N4749A-T ds18007.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 24V 1.3W DO41
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 750 Ohms
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1N4751A-TAP 1N4751A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 30V 1.3W DO41
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
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2000+ 0.15 EUR
1N4751A-T ds18007.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 30V 1.3W DO41
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 1 kOhms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C
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VS-HFA16TB120SR-M3 VS-HFA16TB120SR-M3 vs-hfa16tb120s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 16A D2PAK
Reverse Recovery Time (trr): 135 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A (DC)
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S2B-E3/5BT S2B-E3/5BT S2x.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1.5A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S2B
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
ES2B-E3/5BT ES2B-E3/5BT es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO214AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: ES2B
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auf Bestellung 4620 Stücke
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RS2B-E3/52T RS2B-E3/52T rs2a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1.5A DO214AA
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
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auf Bestellung 4235 Stücke
Lieferzeit 21-28 Tag (e)
ES2BHE3_A/H ES2BHE3_A/H es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO214AA
Base Part Number: ES2B
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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auf Bestellung 2840 Stücke
Lieferzeit 21-28 Tag (e)
1.5KE18AHE3/51 1.5KE18AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 15.3VWM 25.2VC 1.5KE
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 59.5A
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZX84C18-E3-08 BZX84C18-E3-08 bzx84v.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9136 Stücke
Lieferzeit 21-28 Tag (e)
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51+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
BZX84C18-E3-18 BZX84C18-E3-18 bzx84v.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 300MW SOT23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2387 Stücke
Lieferzeit 21-28 Tag (e)
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100+ 0.27 EUR
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1000+ 0.12 EUR
2000+ 0.11 EUR
BZX84C18-HE3-08 BZX84C18-HE3-08 bzx84v.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 15969 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
49+ 0.54 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
BZX84C18-G3-08 BZX84C18-G3-08 bzx84vg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 11799 Stücke
Lieferzeit 21-28 Tag (e)
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
1.5KE36AHE3/51 1.5KE36AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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1N4748A-TAP 1N4748A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 22V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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auf Bestellung 3646 Stücke
Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4748A-T ds18007.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 22V 1.3W DO41
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Mounting Type: Through Hole
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 750 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5401-E3/73 1N5401-E3/73 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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SB560L-5705E3/72 SB560L-5705E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GENERAL PURPOSE
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
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SB560L-6211E3/72 SB560L-6211E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GENERAL PURPOSE
Package / Case: DO-201AD, Axial
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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VS-HFA25TB60S-M3 VS-HFA25TB60S-M3 vs-hfa25tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A D2PAK
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
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10+ 4.44 EUR
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500+ 2.93 EUR
VS-HFA25TB60-M3 VS-HFA25TB60-M3 vs-hfa25tb60-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE FRED 600V 25A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
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auf Bestellung 624 Stücke
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10+ 4.49 EUR
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500+ 2.96 EUR
VS-HFA25TB60SL-M3 VS-HFA25TB60SL-M3 vs-hfa25tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60SR-M3 VS-HFA25TB60SR-M3 vs-hfa25tb60s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N4148-P-TR 1N4148-P-TR 1n4148p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 2A DO35
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 61402 Stücke
Lieferzeit 21-28 Tag (e)
67+ 0.39 EUR
75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.08 EUR
2000+ 0.068 EUR
5000+ 0.061 EUR
G5SBA60L-6088E3/51 G5SBA20,%20G5SBA60,%20G5SBA80%20Product%20Bundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Base Part Number: G5SBA60
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VS-MBR745-M3 VS-MBR745-M3 vs-mbr735-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: TO-220-2
Packaging: Tube
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auf Bestellung 1137 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.39 EUR
13+ 2.15 EUR
100+ 1.68 EUR
500+ 1.39 EUR
1000+ 1.09 EUR
P6SMB15AHE3_A/H P6SMB15AHE3_A/H p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-214AA (SMBJ)
Packaging: Tape & Reel (TR)
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VS-15ETH06-M3 VS-15ETH06-M3 vs-15eth06.pdf Vishay General Semiconductor - Diodes Division Description: DIODE FRED 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 29 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.02 EUR
10+ 2.7 EUR
VS-15ETH06-1-M3 VS-15ETH06-1-M3 vs-15eth06s-m3-1-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO262AA
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
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VS-15ETH06S-M3 VS-15ETH06S-M3 vs-15eth06s-m3-1-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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VS-15ETH06STRL-M3 VS-15ETH06STRL-M3 vs-15eth06s-m3-1-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
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VS-15ETH06STRR-M3 VS-15ETH06STRR-M3 vs-15eth06s-m3-1-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
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VS-15ETH03S-M3 VS-15ETH03S-M3 vs-15eth03s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 15A TO263AB
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-15ETH03-M3 VS-15ETH03-M3 vs-15eth03-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE FRED 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
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VS-15ETH03-1-M3 VS-15ETH03-1-M3 vs-15eth03s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 15A TO262
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Diode Type: Standard
Mounting Type: Through Hole
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VS-15ETH03STRL-M3 VS-15ETH03STRL-M3 vs-15eth03s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
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VS-15ETH03STRR-M3 VS-15ETH03STRR-M3 vs-15eth03s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 15A TO263AB
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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VS-20ETS12S-M3 VS-20ETS12S-M3 vs-20ets08s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20ETS08STRLPBF VS-20ETS08STRLPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO263AB
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
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VS-20ETS12STRLPBF VS-20ETS12STRLPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SS26S-E3/61T SS26S-E3/61T ss26s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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RS1JHE3_A/I RS1JHE3_A/I rs1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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20+ 1.3 EUR
27+ 0.97 EUR
1N4733A-TAP 1N4733A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.1V 1.3W DO41
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
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2000+ 0.15 EUR
1N4733A-T 1N4733A-T 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.1V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 550 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C
Packaging: Tape & Reel (TR)
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MMSZ4704-E3-08 MMSZ4704-E3-08 mmsz4681.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 17V 500MW SOD123
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Zener (Nom) (Vz): 17V
Tolerance: ±5%
Power - Max: 500mW
Current - Reverse Leakage @ Vr: 50nA @ 12.9V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: MMSZ4704
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auf Bestellung 4659 Stücke
Lieferzeit 21-28 Tag (e)
P6SMB62CAHM3/I P6SMB62CAHM3/I p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
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P6SMB62CAHM3/H P6SMB62CAHM3/H p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
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P6SMB62CAHE3_A/H P6SMB62CAHE3_A/H p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 53VWM 85VC DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
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BZX85C12-TAP BZX85C12-TAP bzx85.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 175°C
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Lieferzeit 21-28 Tag (e)
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10000+ 0.13 EUR
BYG10Y-M3/TR BYG10D,G,J,K,M,Y.pdf
BYG10Y-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SS210-E3/52T ss29.pdf
SS210-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Schottky
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
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Lieferzeit 21-28 Tag (e)
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SS210-E3/5BT ss29.pdf
SS210-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2993 Stücke - Preis und Lieferfrist anzeigen
V10P20-M3/87A v10p20.pdf
V10P20-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Base Part Number: V10P20
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Current - Average Rectified (Io): 2.4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 69 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5629 Stücke - Preis und Lieferfrist anzeigen
VSKY05201006-G4-08 vsky05201006.pdf
VSKY05201006-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHTKY 20V 500MA CLP10062L
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 20V
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Base Part Number: VSKY05201006
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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V10P20-M3/86A v10p20.pdf
V10P20-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4402 Stücke - Preis und Lieferfrist anzeigen
6+ 4.6 EUR
10+ 4.15 EUR
100+ 3.33 EUR
500+ 2.74 EUR
1.5KE6.8AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE6.8AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 143A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4749A-TAP 1n4728a.pdf
1N4749A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
auf Bestellung 5700 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 195000 Stücke - Preis und Lieferfrist anzeigen
1N4937GP-E3/73 1n4933gp.pdf
1N4937GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1928 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
33+ 0.81 EUR
100+ 0.5 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
BZX55C5V6-TAP техническая информация bzx55.pdf
BZX55C5V6-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 10331 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49020 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
55+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
5000+ 0.084 EUR
BZX85C15-TR bzx85.pdf
BZX85C15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W DO204AL
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14774 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14500 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
31+ 0.84 EUR
100+ 0.45 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
2000+ 0.18 EUR
VS-MBR1545CT-M3 vs-mbr1535_45ct-m3.pdf
VS-MBR1545CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 7.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR1545CT801HE3/45 MBR(F,B)15H35CT%20-%2015H60CT.pdf
MBR1545CT801HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AB
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR1545CT802HE3/45 MBR(F,B)15H35CT%20-%2015H60CT.pdf
MBR1545CT802HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15TB60S-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A D2PAK
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
auf Bestellung 1740 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.28 EUR
10+ 2.95 EUR
100+ 2.3 EUR
500+ 1.9 EUR
1000+ 1.5 EUR
VS-HFA15TB60-1-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A (DC)
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 801 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 1.98 EUR
VS-HFA15TB60-M3 vs-hfa15tb60-m3.pdf
VS-HFA15TB60-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED 600V 15A TO220AC
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1594 Stücke - Preis und Lieferfrist anzeigen
VS-HFA15TB60SL-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60SL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A D2PAK
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15TB60SR-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60SR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A (DC)
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZT52C18-E3-08 bzt52.pdf
BZT52C18-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13515 Stücke - Preis und Lieferfrist anzeigen
BZT52C18-HE3-08 bzt52.pdf
BZT52C18-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
BZT52C10-E3-08 bzt52.pdf
BZT52C10-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Packaging: Cut Tape (CT)
auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
BZT52C10-E3-18 bzt52.pdf
BZT52C10-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZT52C10-HE3-08 bzt52.pdf
BZT52C10-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 5.2 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Power - Max: 410 mW
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 3536 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
35+ 0.75 EUR
42+ 0.63 EUR
100+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
BZT52C3V3-E3-08 bzt52.pdf
BZT52C3V3-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 410 mW
auf Bestellung 14500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20562 Stücke - Preis und Lieferfrist anzeigen
BZT52C3V3-G3-08 bzt52g.pdf
BZT52C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
auf Bestellung 415 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11561 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
38+ 0.7 EUR
100+ 0.37 EUR
BZT52C3V3-HE3-18 bzt52.pdf
BZT52C3V3-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9995 Stücke - Preis und Lieferfrist anzeigen
BZT52C3V3-E3-18 bzt52.pdf
BZT52C3V3-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9642 Stücke - Preis und Lieferfrist anzeigen
SM6T27AHE3_A/H sm6t.pdf
SM6T27AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 16A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VTVS3V3GSMF-HM3-18 vtvs3v3asmf.pdf
VTVS3V3GSMF-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Voltage - Reverse Standoff (Typ): 3.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VTVS3V3
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
auf Bestellung 31838 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
TPSMA27AHE3_B/H tpsma.pdf
TPSMA27AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 3826 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
25+ 1.08 EUR
100+ 0.74 EUR
500+ 0.55 EUR
BAT46W-G3-08 bat46w-g.pdf
BAT46W-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 150MA SOD123
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA (DC)
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5517 Stücke - Preis und Lieferfrist anzeigen
BAT46W-HE3-08 bat46wv.pdf
BAT46W-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA (DC)
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123
auf Bestellung 8881 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27875 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
32+ 0.83 EUR
100+ 0.47 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
ZMM5230B-13 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5230B-13
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-213AA (GL34)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MUR1620CT-M3 vs-mur1620ct-m3.pdf
VS-MUR1620CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED 200V 8A TO220AB
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40CTQ150S-M-S1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY - D2PAK
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4936GP-E3/73 1n4933gp.pdf
1N4936GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1207 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
32+ 0.83 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
BAS16-HE3-08 bas16.pdf
BAS16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5231 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13662 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
49+ 0.54 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
auf Bestellung 7314 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 266 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
SS26SHE3_B/I ss26s.pdf
SS26SHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SM8S12AHE3_A/I sm8s.pdf
SM8S12AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 332A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
BZD27C75P-E3-08 bzd27series.pdf
BZD27C75P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 800MW DO219AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 56V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 800mW
Voltage - Zener (Nom) (Vz): 75V
Base Part Number: BZD27C75
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 29495 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24000 Stücke - Preis und Lieferfrist anzeigen
UF5402-E3/73 uf5400.pdf
UF5402-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 898 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.69 EUR
19+ 1.43 EUR
100+ 1.07 EUR
500+ 0.84 EUR
SMBJ100AHE3_A/H smbj.pdf
SMBJ100AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
AZ23C3V3-E3-08 az23.pdf
AZ23C3V3-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
auf Bestellung 17362 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47709 Stücke - Preis und Lieferfrist anzeigen
34+ 0.78 EUR
40+ 0.65 EUR
100+ 0.35 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
B340A-M3/61T b330la.pdf
B340A-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
auf Bestellung 10295 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16020 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
27+ 0.98 EUR
100+ 0.73 EUR
500+ 0.57 EUR
B340A-E3/5AT b330la.pdf
B340A-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
auf Bestellung 501 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5650 Stücke - Preis und Lieferfrist anzeigen
19+ 1.43 EUR
23+ 1.16 EUR
100+ 0.79 EUR
500+ 0.59 EUR
VS-GBPC2508W vs-gbpc25.pdf
VS-GBPC2508W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TLZ11C-GS08 tlz.pdf
TLZ11C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Voltage - Zener (Nom) (Vz): 11V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: TLZ11
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 40nA @ 10.28V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 500mW
auf Bestellung 3358 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 56395 Stücke - Preis und Lieferfrist anzeigen
BZX85C3V0-TR bzx85.pdf
BZX85C3V0-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 1.3W DO41
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
auf Bestellung 20312 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
31+ 0.84 EUR
100+ 0.45 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
2000+ 0.18 EUR
1N4749A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1.3W DO41
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 750 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4751A-TAP 1n4728a.pdf
1N4751A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1.3W DO41
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
auf Bestellung 2656 Stücke
Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4751A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1.3W DO41
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 1 kOhms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA16TB120SR-M3 vs-hfa16tb120s-m3.pdf
VS-HFA16TB120SR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A D2PAK
Reverse Recovery Time (trr): 135 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S2B-E3/5BT S2x.pdf
S2B-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S2B
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
ES2B-E3/5BT es2.pdf
ES2B-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: ES2B
auf Bestellung 4620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
RS2B-E3/52T rs2a.pdf
RS2B-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
auf Bestellung 4235 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3750 Stücke - Preis und Lieferfrist anzeigen
ES2BHE3_A/H es2.pdf
ES2BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Base Part Number: ES2B
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2840 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
1.5KE18AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE18AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC 1.5KE
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 59.5A
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84C18-E3-08 bzx84v.pdf
BZX84C18-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
auf Bestellung 9136 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19279 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
51+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
BZX84C18-E3-18 bzx84v.pdf
BZX84C18-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
auf Bestellung 2387 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9985 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
51+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
BZX84C18-HE3-08 bzx84v.pdf
BZX84C18-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 15969 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35731 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.54 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
BZX84C18-G3-08 bzx84vg.pdf
BZX84C18-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Power - Max: 300 mW
Part Status: Active
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
auf Bestellung 11799 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23667 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
1.5KE36AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE36AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4748A-TAP 1n4728a.pdf
1N4748A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 3646 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4748A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.3W DO41
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Mounting Type: Through Hole
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 750 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5401-E3/73 1n5400.pdf
1N5401-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB560L-5705E3/72
SB560L-5705E3/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GENERAL PURPOSE
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB560L-6211E3/72
SB560L-6211E3/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GENERAL PURPOSE
Package / Case: DO-201AD, Axial
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60S-M3 vs-hfa25tb60s-m3.pdf
VS-HFA25TB60S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A D2PAK
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.94 EUR
10+ 4.44 EUR
100+ 3.57 EUR
500+ 2.93 EUR
VS-HFA25TB60-M3 vs-hfa25tb60-m3.pdf
VS-HFA25TB60-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED 600V 25A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 624 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.99 EUR
10+ 4.49 EUR
100+ 3.61 EUR
500+ 2.96 EUR
VS-HFA25TB60SL-M3 vs-hfa25tb60s-m3.pdf
VS-HFA25TB60SL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60SR-M3 vs-hfa25tb60s-m3.pdf
VS-HFA25TB60SR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A (DC)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148-P-TR 1n4148p.pdf
1N4148-P-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 2A DO35
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
auf Bestellung 61402 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.08 EUR
2000+ 0.068 EUR
5000+ 0.061 EUR
G5SBA60L-6088E3/51 G5SBA20,%20G5SBA60,%20G5SBA80%20Product%20Bundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Base Part Number: G5SBA60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR745-M3 vs-mbr735-m3.pdf
VS-MBR745-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1137 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.39 EUR
13+ 2.15 EUR
100+ 1.68 EUR
500+ 1.39 EUR
1000+ 1.09 EUR
P6SMB15AHE3_A/H p6smb.pdf
P6SMB15AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-214AA (SMBJ)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06-M3 vs-15eth06.pdf
VS-15ETH06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 29 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.02 EUR
10+ 2.7 EUR
VS-15ETH06-1-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06S-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06STRL-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06STRR-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH03S-M3 vs-15eth03s-m3.pdf
VS-15ETH03S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH03-M3 vs-15eth03-m3.pdf
VS-15ETH03-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.68 EUR
11+ 2.37 EUR
100+ 1.85 EUR
500+ 1.53 EUR
1000+ 1.21 EUR
VS-15ETH03-1-M3 vs-15eth03s-m3.pdf
VS-15ETH03-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO262
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Diode Type: Standard
Mounting Type: Through Hole
auf Bestellung 415 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.7 EUR
11+ 2.44 EUR
100+ 1.9 EUR
VS-15ETH03STRL-M3 vs-15eth03s-m3.pdf
VS-15ETH03STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH03STRR-M3 vs-15eth03s-m3.pdf
VS-15ETH03STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12S-M3 vs-20ets08s.pdf
VS-20ETS12S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08STRLPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS08STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12STRLPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS12STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 72888 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 72000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
RS1JHE3_A/I rs1a.pdf
RS1JHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.3 EUR
27+ 0.97 EUR
1N4733A-TAP 1n4728a.pdf
1N4733A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
auf Bestellung 3729 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25000 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4733A-T 1n4728a.pdf
1N4733A-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 550 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMSZ4704-E3-08 mmsz4681.pdf
MMSZ4704-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW SOD123
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Zener (Nom) (Vz): 17V
Tolerance: ±5%
Power - Max: 500mW
Current - Reverse Leakage @ Vr: 50nA @ 12.9V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: MMSZ4704
auf Bestellung 4659 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
P6SMB62CAHM3/I p6smb.pdf
P6SMB62CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB62CAHM3/H p6smb.pdf
P6SMB62CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB62CAHE3_A/H p6smb.pdf
P6SMB62CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 53VWM 85VC DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX85C12-TAP bzx85.pdf
BZX85C12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 175°C
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 91708 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.16 EUR
10000+ 0.13 EUR
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