Die Produkte vishay general semiconductor - diodes division

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1N4002GP-E3/54 1N4002GP-E3/54 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
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auf Bestellung 54995 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
23+ 1.13 EUR
100+ 0.85 EUR
500+ 0.67 EUR
1000+ 0.51 EUR
2000+ 0.47 EUR
1N4003GP-E3/54 1N4003GP-E3/54 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
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1N4247GP-E3/54 1N4247GP-E3/54 1n4245gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 160°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
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RS1K-E3/61T RS1K-E3/61T rs1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO214AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
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RS1A-E3/61T RS1A-E3/61T rs1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Base Part Number: RS1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Part Status: Active
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auf Bestellung 5400 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Diode Type: Standard
Packaging: Cut Tape (CT)
Part Status: Active
Base Part Number: RS1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150ns
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auf Bestellung 6712 Stücke
Lieferzeit 21-28 Tag (e)
RS1D-E3/61T RS1D-E3/61T rs1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214AC
Base Part Number: RS1D
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214AC
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
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auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
RS1B-E3/61T RS1B-E3/61T rs1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214AC
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214AC
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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auf Bestellung 1632 Stücke
Lieferzeit 21-28 Tag (e)
SS12-E3/61T SS12-E3/61T ss12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
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auf Bestellung 5400 Stücke
Lieferzeit 21-28 Tag (e)
1800+ 0.28 EUR
3600+ 0.25 EUR
5400+ 0.22 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6038 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
27+ 0.99 EUR
100+ 0.56 EUR
500+ 0.37 EUR
SS13-E3/61T SS13-E3/61T ss12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO214AC
Base Part Number: SS13
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 200µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
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auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO214AC
Base Part Number: SS13
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 200µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3190 Stücke
Lieferzeit 21-28 Tag (e)
RGP10M-E3/54 RGP10M-E3/54 rgp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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1N4936GP-E3/54 1N4936GP-E3/54 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Reverse Recovery Time (trr): 200 ns
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
5500+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
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auf Bestellung 7148 Stücke
Lieferzeit 21-28 Tag (e)
19+ 1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
2000+ 0.49 EUR
1N4937GP-E3/54 1N4937GP-E3/54 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4948GP-E3/54 1N4948GP-E3/54 1n4942gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N4948
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Base Part Number: 1N4948
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
1N4942GP-E3/54 1N4942GP-E3/54 1n4942gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Mounting Type: Through Hole
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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auf Bestellung 24 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
23+ 1.14 EUR
1N4934GP-E3/54 1N4934GP-E3/54 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
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auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
5500+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
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auf Bestellung 10470 Stücke
Lieferzeit 21-28 Tag (e)
19+ 1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
2000+ 0.49 EUR
SA2D-E3/61T SA2D-E3/61T sa2b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
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SA2M-E3/61T SA2M-E3/61T sa2b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 1000V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
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B140-E3/61T B140-E3/61T b120.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
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1800+ 0.23 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
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auf Bestellung 2363 Stücke
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25+ 1.07 EUR
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US1G-E3/5AT US1G-E3/5AT us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
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7500+ 0.28 EUR
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214AC
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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auf Bestellung 98298 Stücke
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25+ 1.04 EUR
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500+ 0.44 EUR
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2000+ 0.3 EUR
US1J-E3/5AT US1J-E3/5AT us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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2000+ 0.3 EUR
RGP10M-E3/73 RGP10M-E3/73 rgp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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auf Bestellung 40 Stücke
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GP10W-E3/54 GP10W-E3/54 gp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.5KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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auf Bestellung 33000 Stücke
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.5KV 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
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auf Bestellung 38975 Stücke
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1N4933GP-E3/73 1N4933GP-E3/73 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: 1N4933
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
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ES1C-E3/61T ES1C-E3/61T es1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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ES1B-E3/61T ES1B-E3/61T es1.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
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3600+ 0.25 EUR
5400+ 0.24 EUR
12600+ 0.22 EUR
45000+ 0.21 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
ES1A-E3/61T ES1A-E3/61T es1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
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SB040-E3/54 SB040-E3/54 SB020%20thru%20SB060.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 600MA MPG06
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -65°C ~ 125°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB040
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RGP10GE-E3/54 RGP10GE-E3/54 rgp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
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auf Bestellung 122 Stücke
Lieferzeit 21-28 Tag (e)
S2G-E3/52T S2G-E3/52T S2x.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO214AA
Base Part Number: S2G
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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auf Bestellung 750 Stücke
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO214AA
Base Part Number: S2G
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
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auf Bestellung 1235 Stücke
Lieferzeit 21-28 Tag (e)
SB150-E3/73 SB150-E3/73 sb110.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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auf Bestellung 2788 Stücke
Lieferzeit 21-28 Tag (e)
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30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
EGP10D-E3/54 EGP10D-E3/54 egp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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auf Bestellung 75 Stücke
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20+ 1.33 EUR
23+ 1.13 EUR
S07J-GS08 S07J-GS08 s07b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO219AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 700mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 700mA
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: S07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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S2M-E3/52T S2M-E3/52T S2x.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO214
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO214
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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S2J-E3/52T S2J-E3/52T S2x.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
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S2K-E3/52T S2K-E3/52T S2x.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1.5A DO214AA
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S2K
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
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GL41A-E3/97 GL41A-E3/97 bym10-xxx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO213AB
Base Part Number: GL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO213AB
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
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BYM10-1000-E3/96 BYM10-1000-E3/96 bym10-xxx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
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BYG23M-E3/TR3 BYG23M-E3/TR3 byg23m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 75 ns
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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SS2P4-M3/84A SS2P4-M3/84A ss2p2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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US1J-E3/61T US1J-E3/61T us1.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AC
Current - Average Rectified (Io): 1A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
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US1K-E3/61T US1K-E3/61T us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO214AC
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
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1800+ 0.33 EUR
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO214AC
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
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GP10Y-E3/54 GP10Y-E3/54 gp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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23+ 1.13 EUR
BA679-GS18 BA679-GS18 ba679ba.pdf Vishay General Semiconductor - Diodes Division Description: RF DIODE PIN 30V SOD80 MINIMELF
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Max: 50 mA
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Voltage - Peak Reverse (Max): 30V
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500+ 0.52 EUR
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BZG05C9V1-M3-08 BZG05C9V1-M3-08 bzg05c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
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BZG05C9V1-M3-18 BZG05C9V1-M3-18 bzg05c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
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BZG05C9V1-HM3-08 BZG05C9V1-HM3-08 bzg05c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
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BZG05C9V1-HM3-18 BZG05C9V1-HM3-18 bzg05c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
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MUR460-E3/73 MUR460-E3/73 mur440-e3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO201AD
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Reverse Recovery Time (trr): 75 ns
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR460-M3/73 MUR460-M3/73 mur440-e3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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MUR460-E3/54 MUR460-E3/54 mur440-e3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 546 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.42 EUR
13+ 2.13 EUR
100+ 1.63 EUR
500+ 1.29 EUR
BZG05C9V1-M3-08 BZG05C9V1-M3-08 bzg05c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ZPY100-TR ZPY100-TR zpy3v9.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 100V 1.3W DO41
Current - Reverse Leakage @ Vr: 500nA @ 75V
Impedance (Max) (Zzt): 130 Ohms
Power - Max: 1.3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ZPY100
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9230 Stücke
Lieferzeit 21-28 Tag (e)
SMAJ5.0AHE3_A/H SMAJ5.0AHE3_A/H smaj50a.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5VWM 9.2VC DO214AC
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
8TQ100 8TQ100 8TQ080-100(S)%20N0639%20REV.A.pdf 8TQ080-100(S)%20N0639%20REV.A.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 8A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAT54S-E3-08 BAT54S-E3-08 bat54.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 30V SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2439 Stücke
Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
1.5SMC30AHM3/I 15smc.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 36.2A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG03C10TR BZG03C10TR BZG03C_Series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 10V 1.25W DO214AC
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Obsolete
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4002GP-E3/54 1n4001gp.pdf
1N4002GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
auf Bestellung 54995 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49500 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
23+ 1.13 EUR
100+ 0.85 EUR
500+ 0.67 EUR
1000+ 0.51 EUR
2000+ 0.47 EUR
1N4003GP-E3/54 1n4001gp.pdf
1N4003GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4247GP-E3/54 1n4245gp.pdf
1N4247GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 160°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RS1K-E3/61T rs1a.pdf
RS1K-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26947 Stücke - Preis und Lieferfrist anzeigen
RS1A-E3/61T rs1a.pdf
RS1A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Base Part Number: RS1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Part Status: Active
auf Bestellung 5400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21037 Stücke - Preis und Lieferfrist anzeigen
RS1A-E3/61T rs1a.pdf
RS1A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Diode Type: Standard
Packaging: Cut Tape (CT)
Part Status: Active
Base Part Number: RS1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150ns
auf Bestellung 6712 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19725 Stücke - Preis und Lieferfrist anzeigen
RS1D-E3/61T rs1a.pdf
RS1D-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Base Part Number: RS1D
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
RS1D-E3/61T rs1a.pdf
RS1D-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
RS1B-E3/61T rs1a.pdf
RS1B-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1632 Stücke - Preis und Lieferfrist anzeigen
RS1B-E3/61T rs1a.pdf
RS1B-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1632 Stücke
Lieferzeit 21-28 Tag (e)
SS12-E3/61T ss12.pdf
SS12-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
auf Bestellung 5400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 229874 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.28 EUR
3600+ 0.25 EUR
5400+ 0.22 EUR
SS12-E3/61T ss12.pdf
SS12-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 6038 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 229236 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
27+ 0.99 EUR
100+ 0.56 EUR
500+ 0.37 EUR
SS13-E3/61T ss12.pdf
SS13-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AC
Base Part Number: SS13
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 200µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 161590 Stücke - Preis und Lieferfrist anzeigen
SS13-E3/61T ss12.pdf
SS13-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AC
Base Part Number: SS13
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 200µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3190 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 160200 Stücke - Preis und Lieferfrist anzeigen
RGP10M-E3/54 rgp10a.pdf
RGP10M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
1N4936GP-E3/54 1n4933gp.pdf
1N4936GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Reverse Recovery Time (trr): 200 ns
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7148 Stücke - Preis und Lieferfrist anzeigen
5500+ 0.48 EUR
1N4936GP-E3/54 1n4933gp.pdf
1N4936GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
auf Bestellung 7148 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5500 Stücke - Preis und Lieferfrist anzeigen
19+ 1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
2000+ 0.49 EUR
1N4937GP-E3/54 1n4933gp.pdf
1N4937GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4948GP-E3/54 1n4942gp.pdf
1N4948GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N4948
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 43 Stücke - Preis und Lieferfrist anzeigen
1N4948GP-E3/54 1n4942gp.pdf
1N4948GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Base Part Number: 1N4948
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
1N4942GP-E3/54 1n4942gp.pdf
1N4942GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24 Stücke - Preis und Lieferfrist anzeigen
1N4942GP-E3/54 1n4942gp.pdf
1N4942GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Mounting Type: Through Hole
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 24 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
23+ 1.14 EUR
1N4934GP-E3/54 1n4933gp.pdf
1N4934GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10470 Stücke - Preis und Lieferfrist anzeigen
5500+ 0.48 EUR
1N4934GP-E3/54 1n4933gp.pdf
1N4934GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
auf Bestellung 10470 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5500 Stücke - Preis und Lieferfrist anzeigen
19+ 1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
2000+ 0.49 EUR
SA2D-E3/61T sa2b.pdf
SA2D-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23328 Stücke - Preis und Lieferfrist anzeigen
SA2D-E3/61T sa2b.pdf
SA2D-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
auf Bestellung 128 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23200 Stücke - Preis und Lieferfrist anzeigen
SA2M-E3/61T sa2b.pdf
SA2M-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 1000V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SA2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19291 Stücke - Preis und Lieferfrist anzeigen
B140-E3/61T b120.pdf
B140-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2363 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.23 EUR
B140-E3/61T b120.pdf
B140-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 2363 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
25+ 1.07 EUR
33+ 0.81 EUR
100+ 0.46 EUR
500+ 0.3 EUR
US1G-E3/5AT us1.pdf
US1G-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
auf Bestellung 97500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 112453 Stücke - Preis und Lieferfrist anzeigen
7500+ 0.28 EUR
15000+ 0.27 EUR
US1G-E3/5AT us1.pdf
US1G-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 98298 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 111655 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
31+ 0.85 EUR
100+ 0.58 EUR
500+ 0.44 EUR
1000+ 0.33 EUR
2000+ 0.3 EUR
US1J-E3/5AT us1.pdf
US1J-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16205 Stücke - Preis und Lieferfrist anzeigen
US1J-E3/5AT us1.pdf
US1J-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 5525 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10680 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
31+ 0.85 EUR
100+ 0.58 EUR
500+ 0.44 EUR
1000+ 0.33 EUR
2000+ 0.3 EUR
RGP10M-E3/73 rgp10a.pdf
RGP10M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 212040 Stücke - Preis und Lieferfrist anzeigen
RGP10M-E3/73 rgp10a.pdf
RGP10M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 212000 Stücke - Preis und Lieferfrist anzeigen
GP10W-E3/54 gp10a.pdf
GP10W-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38975 Stücke - Preis und Lieferfrist anzeigen
GP10W-E3/54 gp10a.pdf
GP10W-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
auf Bestellung 38975 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
1N4933GP-E3/73 1n4933gp.pdf
1N4933GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: 1N4933
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1C-E3/61T es1.pdf
ES1C-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5544 Stücke - Preis und Lieferfrist anzeigen
ES1B-E3/61T техническая информация es1.pdf
ES1B-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
auf Bestellung 91800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 142392 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.28 EUR
3600+ 0.25 EUR
5400+ 0.24 EUR
12600+ 0.22 EUR
45000+ 0.21 EUR
ES1B-E3/61T техническая информация es1.pdf
ES1B-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 97306 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 136886 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
ES1A-E3/61T es1.pdf
ES1A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2535 Stücke - Preis und Lieferfrist anzeigen
SB040-E3/54 SB020%20thru%20SB060.pdf
SB040-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 600MA MPG06
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -65°C ~ 125°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB040
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP10GE-E3/54 rgp10a.pdf
RGP10GE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGP10GE-E3/54 rgp10a.pdf
RGP10GE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
auf Bestellung 122 Stücke
Lieferzeit 21-28 Tag (e)
S2G-E3/52T S2x.pdf
S2G-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO214AA
Base Part Number: S2G
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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S2G-E3/52T S2x.pdf
S2G-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO214AA
Base Part Number: S2G
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
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Lieferzeit 21-28 Tag (e)
auf Bestellung 750 Stücke - Preis und Lieferfrist anzeigen
SB150-E3/73 sb110.pdf
SB150-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2788 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.26 EUR
6000+ 0.24 EUR
15000+ 0.22 EUR
SB150-E3/73 sb110.pdf
SB150-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2788 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
EGP10D-E3/54 egp10a.pdf
EGP10D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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EGP10D-E3/54 egp10a.pdf
EGP10D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
23+ 1.13 EUR
S07J-GS08 s07b.pdf
S07J-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO219AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 700mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
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Lieferzeit 21-28 Tag (e)
auf Bestellung 135524 Stücke - Preis und Lieferfrist anzeigen
S07J-GS08 s07b.pdf
S07J-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 700mA
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: S07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 21230 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 135294 Stücke - Preis und Lieferfrist anzeigen
S2M-E3/52T S2x.pdf
S2M-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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S2M-E3/52T S2x.pdf
S2M-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 604 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3060 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
32+ 0.82 EUR
100+ 0.51 EUR
S2J-E3/52T S2x.pdf
S2J-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2984 Stücke - Preis und Lieferfrist anzeigen
S2K-E3/52T S2x.pdf
S2K-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO214AA
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S2K
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A
auf Bestellung 2490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4740 Stücke - Preis und Lieferfrist anzeigen
GL41A-E3/97 bym10-xxx.pdf
GL41A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Base Part Number: GL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 35000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 36128 Stücke - Preis und Lieferfrist anzeigen
GL41A-E3/97 bym10-xxx.pdf
GL41A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
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Lieferzeit 21-28 Tag (e)
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BYM10-1000-E3/96 bym10-xxx.pdf
BYM10-1000-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG23M-E3/TR3 byg23m.pdf
BYG23M-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
auf Bestellung 112500 Stücke
Lieferzeit 21-28 Tag (e)
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7500+ 0.31 EUR
15000+ 0.3 EUR
BYG23M-E3/TR3 byg23m.pdf
BYG23M-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 75 ns
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 125727 Stücke
Lieferzeit 21-28 Tag (e)
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23+ 1.17 EUR
28+ 0.93 EUR
100+ 0.64 EUR
500+ 0.48 EUR
1000+ 0.36 EUR
2000+ 0.33 EUR
SS2P4-M3/84A ss2p2.pdf
SS2P4-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 282000 Stücke
Lieferzeit 21-28 Tag (e)
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3000+ 0.35 EUR
6000+ 0.33 EUR
15000+ 0.32 EUR
SS2P4-M3/84A ss2p2.pdf
SS2P4-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 282151 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 282000 Stücke - Preis und Lieferfrist anzeigen
21+ 1.25 EUR
26+ 1 EUR
100+ 0.68 EUR
500+ 0.51 EUR
1000+ 0.38 EUR
US1J-E3/61T техническая информация us1.pdf
US1J-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
auf Bestellung 14400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28664 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.33 EUR
3600+ 0.3 EUR
5400+ 0.28 EUR
12600+ 0.27 EUR
US1J-E3/61T техническая информация us1.pdf
US1J-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Average Rectified (Io): 1A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 14777 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28287 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
31+ 0.85 EUR
100+ 0.58 EUR
500+ 0.44 EUR
US1K-E3/61T us1.pdf
US1K-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24656 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.33 EUR
3600+ 0.3 EUR
US1K-E3/61T us1.pdf
US1K-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 4444 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23812 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
31+ 0.85 EUR
100+ 0.58 EUR
500+ 0.44 EUR
GP10Y-E3/54 gp10a.pdf
GP10Y-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
GP10Y-E3/54 gp10a.pdf
GP10Y-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
23+ 1.13 EUR
BA679-GS18 ba679ba.pdf
BA679-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V SOD80 MINIMELF
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Max: 50 mA
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Voltage - Peak Reverse (Max): 30V
auf Bestellung 9461 Stücke
Lieferzeit 21-28 Tag (e)
21+ 1.27 EUR
26+ 1.02 EUR
100+ 0.69 EUR
500+ 0.52 EUR
1000+ 0.39 EUR
2000+ 0.36 EUR
5000+ 0.34 EUR
BZG05C9V1-M3-08 bzg05c-m-series.pdf
BZG05C9V1-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG05C9V1-M3-18 bzg05c-m-series.pdf
BZG05C9V1-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG05C9V1-HM3-08 bzg05c-m-series.pdf
BZG05C9V1-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG05C9V1-HM3-18 bzg05c-m-series.pdf
BZG05C9V1-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR460-E3/73 mur440-e3.pdf
MUR460-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 352 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 201000 Stücke - Preis und Lieferfrist anzeigen
13+ 2 EUR
15+ 1.78 EUR
100+ 1.36 EUR
MUR460-E3/73 mur440-e3.pdf
MUR460-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO201AD
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Reverse Recovery Time (trr): 75 ns
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200352 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.86 EUR
MUR460-M3/73 mur440-e3.pdf
MUR460-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 427 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.64 EUR
19+ 1.44 EUR
100+ 1.11 EUR
MUR460-E3/54 mur440-e3.pdf
MUR460-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 546 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 766 Stücke - Preis und Lieferfrist anzeigen
11+ 2.42 EUR
13+ 2.13 EUR
100+ 1.63 EUR
500+ 1.29 EUR
BZG05C9V1-M3-08 bzg05c-m-series.pdf
BZG05C9V1-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ZPY100-TR zpy3v9.pdf
ZPY100-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO41
Current - Reverse Leakage @ Vr: 500nA @ 75V
Impedance (Max) (Zzt): 130 Ohms
Power - Max: 1.3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ZPY100
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
auf Bestellung 9230 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
SMAJ5.0AHE3_A/H smaj50a.pdf
SMAJ5.0AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AC
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
8TQ100 техническая информация 8TQ080-100(S)%20N0639%20REV.A.pdf 8TQ080-100(S)%20N0639%20REV.A.pdf
8TQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
BAT54S-E3-08 bat54.pdf
BAT54S-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2439 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 65329 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
1.5SMC30AHM3/I 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 36.2A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG03C10TR BZG03C_Series.pdf
BZG03C10TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Obsolete
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
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