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VS-50WQ03FNTR-M3 VS-50WQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 50wq03fn.pdf Description: DIODE SCHOTTKY 30V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
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100+0.73 EUR
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VS-8EWH02FNTR-M3 VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewh02fn.pdf Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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VS-30BQ060-M3/9AT VS-30BQ060-M3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060m.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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VS-5ECU06-M3/9AT VS-5ECU06-M3/9AT Vishay General Semiconductor - Diodes Division vs-5ecu06-m3.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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1.5KE22CAHE3_A/C 1.5KE22CAHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 18.8VWM 30.6VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBRS340-M3/9AT VS-MBRS340-M3/9AT Vishay General Semiconductor - Diodes Division vs-mbrs340m3.pdf Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-10BQ100-M3/5BT VS-10BQ100-M3/5BT Vishay General Semiconductor - Diodes Division vs-10bq100m.pdf Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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VS-6CWQ03FNTR-M3 VS-6CWQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 6cwq03fn.pdf Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VS-30BQ060HM3/9AT VS-30BQ060HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060hm3.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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VS-30WQ03FNTR-M3 VS-30WQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 30wq03fn.pdf Description: DIODE SCHOTTKY 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VCAN16A2-03GHE3-08 Vishay General Semiconductor - Diodes Division vcan16a2-03g.pdf Description: TVS DIODE 16VWM 28VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VCAN16A2-03GHE3-08 Vishay General Semiconductor - Diodes Division vcan16a2-03g.pdf Description: TVS DIODE 16VWM 28VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-32CTQ030STRL-M3 VS-32CTQ030STRL-M3 Vishay General Semiconductor - Diodes Division vs-32ctqs-m3series.pdf Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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1N4004GPE-E3/54 1N4004GPE-E3/54 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BYW52-TR BYW52-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1094 Stücke:
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BZT03C180-TR BZT03C180-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 150VWM 249VC SOD57
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
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BZT03C47-TR BZT03C47-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 47V 1.3W SOD57
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
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BZT03C51-TR BZT03C51-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 43VWM 70.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZT03C43-TR BZT03C43-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 36VWM 60.7VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.98%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZT03C82-TR BZT03C82-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 82V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.1%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
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BZT03C36-TR BZT03C36-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 30VWM 50.1VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZT03C130-TR BZT03C130-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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VS-15MQ040-M3/5AT VS-15MQ040-M3/5AT Vishay General Semiconductor - Diodes Division vs-15mq040m.pdf Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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BZX84C3V3-E3-18 BZX84C3V3-E3-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5222B-TR 1N5222B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 17825 Stücke:
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1N4001-E3/53 1N4001-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2467 Stücke:
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1N5233B-TAP 1N5233B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
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1N5225B-TAP 1N5225B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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VS-42CTQ030STRL-M3 VS-42CTQ030STRL-M3 Vishay General Semiconductor - Diodes Division vs-42ctq030s-m3.pdf Description: DIODE ARR SCHOTT 30V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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VS-16CTQ100STRL-M3 VS-16CTQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARR SCHOTT 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Qualification: AEC-Q101
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VS-8TQ100STRL-M3 VS-8TQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 4872 Stücke:
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VS-10ETS08STRL-M3 VS-10ETS08STRL-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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RS07D-M-08 RS07D-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE GP 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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RS07D-M-08 RS07D-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73792 Stücke:
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MBR2060CT-E3/45 MBR2060CT-E3/45 Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CTHE3/45 MBR2060CTHE3/45 Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S15A-002HE3_A/I SM8S15A-002HE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 270A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 MMSZ5245C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 MMSZ5245C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2419 Stücke:
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TZM5257B-GS08 TZM5257B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 33V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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TZM5257B-GS08 TZM5257B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 33V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 12247 Stücke:
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TZM5251B-GS08 TZM5251B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TZM5251B-GS08 TZM5251B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TZM5256B-GS08 TZM5256B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 30V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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TZM5256B-GS08 TZM5256B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 30V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
auf Bestellung 87 Stücke:
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84+0.21 EUR
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VS-6CWQ03FNTR-M3 VS-6CWQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 6cwq03fn.pdf Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 2000 Stücke:
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2000+0.48 EUR
Mindestbestellmenge: 2000
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SMBJ30CD-M3/I SMBJ30CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 30VWM 47.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.8V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ30CD-M3/I SMBJ30CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 30VWM 47.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.8V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3263 Stücke:
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31+0.58 EUR
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500+0.21 EUR
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V3FM12HM3/H V3FM12HM3/H Vishay General Semiconductor - Diodes Division v3fm12.pdf Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.16 EUR
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V3FM12HM3/H V3FM12HM3/H Vishay General Semiconductor - Diodes Division v3fm12.pdf Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 4724 Stücke:
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25+0.72 EUR
35+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
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VSS8D2M12HM3/H VSS8D2M12HM3/H Vishay General Semiconductor - Diodes Division vss8d2m12.pdf Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
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VSS8D2M12HM3/H VSS8D2M12HM3/H Vishay General Semiconductor - Diodes Division vss8d2m12.pdf Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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SMAJ20AHE3_A/I SMAJ20AHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ110CD-M3/I SMBJ110CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ110CD-M3/I SMBJ110CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 10848 Stücke:
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SMBJ110CD-M3/H SMBJ110CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ110CD-M3/H SMBJ110CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 5515 Stücke:
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SMBJ110D-M3/I SMBJ110D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Produkt ist nicht verfügbar
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SMBJ110D-M3/I SMBJ110D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
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SMBJ11D-M3/I SMBJ11D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 11V 17.9V DO214AA
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VS-50WQ03FNTR-M3 50wq03fn.pdf
VS-50WQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
auf Bestellung 5963 Stücke:
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13+1.41 EUR
19+0.93 EUR
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VS-8EWH02FNTR-M3 vs-8ewh02fn.pdf
VS-8EWH02FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5418 Stücke:
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12+1.48 EUR
21+0.88 EUR
100+0.85 EUR
500+0.69 EUR
1000+0.63 EUR
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VS-30BQ060-M3/9AT vs-30bq060m.pdf
VS-30BQ060-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 6110 Stücke:
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11+1.62 EUR
16+1.17 EUR
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VS-5ECU06-M3/9AT vs-5ecu06-m3.pdf
VS-5ECU06-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 30102 Stücke:
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Anzahl Preis
13+1.43 EUR
16+1.17 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.63 EUR
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1.5KE22CAHE3_A/C 15ke.pdf
1.5KE22CAHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBRS340-M3/9AT vs-mbrs340m3.pdf
VS-MBRS340-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 17371 Stücke:
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Anzahl Preis
22+0.81 EUR
35+0.51 EUR
100+0.40 EUR
500+0.31 EUR
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VS-10BQ100-M3/5BT vs-10bq100m.pdf
VS-10BQ100-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 4695 Stücke:
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28+0.63 EUR
39+0.46 EUR
100+0.34 EUR
500+0.28 EUR
1000+0.24 EUR
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VS-6CWQ03FNTR-M3 6cwq03fn.pdf
VS-6CWQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 3402 Stücke:
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Anzahl Preis
18+1.02 EUR
22+0.81 EUR
100+0.75 EUR
500+0.61 EUR
1000+0.56 EUR
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VS-30BQ060HM3/9AT vs-30bq060hm3.pdf
VS-30BQ060HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 18489 Stücke:
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Anzahl Preis
17+1.06 EUR
26+0.68 EUR
100+0.56 EUR
500+0.43 EUR
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VS-30WQ03FNTR-M3 30wq03fn.pdf
VS-30WQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 4110 Stücke:
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18+1.02 EUR
20+0.88 EUR
100+0.61 EUR
500+0.51 EUR
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VCAN16A2-03GHE3-08 vcan16a2-03g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.10 EUR
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VCAN16A2-03GHE3-08 vcan16a2-03g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
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VS-32CTQ030STRL-M3 vs-32ctqs-m3series.pdf
VS-32CTQ030STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
auf Bestellung 3806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.21 EUR
100+1.77 EUR
Mindestbestellmenge: 6
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1N4004GPE-E3/54 1n4001gp.pdf
1N4004GPE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BYW52-TR byw52.pdf
BYW52-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.93 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
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BZT03C180-TR bzt03.pdf
BZT03C180-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 249VC SOD57
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
auf Bestellung 8260 Stücke:
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15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.38 EUR
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BZT03C47-TR bzt03.pdf
BZT03C47-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 1.3W SOD57
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
auf Bestellung 32956 Stücke:
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25+0.70 EUR
30+0.61 EUR
100+0.42 EUR
500+0.35 EUR
1000+0.33 EUR
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BZT03C51-TR bzt03.pdf
BZT03C51-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 70.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 24623 Stücke:
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16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.60 EUR
1000+0.48 EUR
2000+0.46 EUR
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BZT03C43-TR bzt03.pdf
BZT03C43-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 60.7VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.98%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 8328 Stücke:
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Anzahl Preis
16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.60 EUR
1000+0.48 EUR
2000+0.46 EUR
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BZT03C82-TR bzt03.pdf
BZT03C82-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.1%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
auf Bestellung 17029 Stücke:
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Anzahl Preis
17+1.04 EUR
23+0.80 EUR
100+0.59 EUR
500+0.47 EUR
1000+0.39 EUR
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BZT03C36-TR bzt03.pdf
BZT03C36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 50.1VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 30140 Stücke:
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25+0.70 EUR
30+0.61 EUR
100+0.42 EUR
500+0.35 EUR
1000+0.33 EUR
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BZT03C130-TR bzt03.pdf
BZT03C130-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 23822 Stücke:
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19+0.97 EUR
22+0.83 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.41 EUR
2000+0.36 EUR
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VS-15MQ040-M3/5AT vs-15mq040m.pdf
VS-15MQ040-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 4902 Stücke:
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31+0.58 EUR
50+0.35 EUR
100+0.30 EUR
500+0.26 EUR
1000+0.22 EUR
2000+0.21 EUR
Mindestbestellmenge: 31
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BZX84C3V3-E3-18 bzx84_series.pdf
BZX84C3V3-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 14984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
124+0.14 EUR
285+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
2000+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 91
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1N5222B-TR 1n5221.pdf
1N5222B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 17825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
139+0.13 EUR
259+0.07 EUR
500+0.06 EUR
1000+0.06 EUR
2000+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 91
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1N4001-E3/53 1n4001.pdf
1N4001-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
74+0.24 EUR
142+0.12 EUR
500+0.11 EUR
Mindestbestellmenge: 50
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1N5233B-TAP 1n5221.pdf
1N5233B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
139+0.13 EUR
372+0.05 EUR
500+0.04 EUR
1000+0.04 EUR
2000+0.04 EUR
5000+0.04 EUR
Mindestbestellmenge: 100
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1N5225B-TAP 1n5221.pdf
1N5225B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
114+0.15 EUR
284+0.06 EUR
500+0.06 EUR
1000+0.06 EUR
2000+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 91
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VS-42CTQ030STRL-M3 vs-42ctq030s-m3.pdf
VS-42CTQ030STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.73 EUR
100+2.05 EUR
Mindestbestellmenge: 5
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VS-16CTQ100STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.91 EUR
100+1.74 EUR
Mindestbestellmenge: 7
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VS-8TQ100STRL-M3 vs-8tqs-m3.pdf
VS-8TQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 4872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.73 EUR
100+1.42 EUR
Mindestbestellmenge: 7
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VS-10ETS08STRL-M3 vs-10ets08s.pdf
VS-10ETS08STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 9209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.21 EUR
100+1.72 EUR
Mindestbestellmenge: 7
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RS07D-M-08 rs07bm.pdf
RS07D-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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RS07D-M-08 rs07bm.pdf
RS07D-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.19 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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MBR2060CT-E3/45 mbr20xxct.pdf
MBR2060CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CTHE3/45 mbr20xxct.pdf
MBR2060CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S15A-002HE3_A/I sm8s.pdf
SM8S15A-002HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 270A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5245C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5245C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
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TZM5257B-GS08 tzm5221.pdf
TZM5257B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.07 EUR
5000+0.06 EUR
7500+0.05 EUR
Mindestbestellmenge: 2500
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TZM5257B-GS08 tzm5221.pdf
TZM5257B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 12247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
114+0.15 EUR
224+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 84
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TZM5251B-GS08 tzm5221.pdf
TZM5251B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.07 EUR
5000+0.06 EUR
7500+0.06 EUR
Mindestbestellmenge: 2500
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TZM5251B-GS08 tzm5221.pdf
TZM5251B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
auf Bestellung 9919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
114+0.15 EUR
239+0.07 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 84
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TZM5256B-GS08 tzm5221.pdf
TZM5256B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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TZM5256B-GS08 tzm5221.pdf
TZM5256B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
Mindestbestellmenge: 84
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VS-6CWQ03FNTR-M3 6cwq03fn.pdf
VS-6CWQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.48 EUR
Mindestbestellmenge: 2000
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SMBJ30CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ30CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 47.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.8V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.13 EUR
Mindestbestellmenge: 3200
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SMBJ30CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ30CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 47.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.8V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.40 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
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V3FM12HM3/H v3fm12.pdf
V3FM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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V3FM12HM3/H v3fm12.pdf
V3FM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 4724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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VSS8D2M12HM3/H vss8d2m12.pdf
VSS8D2M12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
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VSS8D2M12HM3/H vss8d2m12.pdf
VSS8D2M12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
31+0.58 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.22 EUR
Mindestbestellmenge: 25
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SMAJ20AHE3_A/I smaj50a.pdf
SMAJ20AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ110CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ110CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.19 EUR
6400+0.17 EUR
9600+0.16 EUR
Mindestbestellmenge: 3200
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SMBJ110CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ110CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 10848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21
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SMBJ110CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ110CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 5250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.15 EUR
1500+0.14 EUR
2250+0.13 EUR
Mindestbestellmenge: 750
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SMBJ110CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ110CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 5515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.28 EUR
Mindestbestellmenge: 29
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SMBJ110D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ110D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Produkt ist nicht verfügbar
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SMBJ110D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ110D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Produkt ist nicht verfügbar
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SMBJ11D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ11D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11V 17.9V DO214AA
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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