| Foto | Bezeichnung | Hersteller | Beschreibung |
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SFH620A-3 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 4.5%@1mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2135 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH620A-3X006 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6286-2T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-200%@1mA Collector-emitter voltage: 55V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 959 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6286-3T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@1mA Collector-emitter voltage: 55V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3560 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6286-4 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-500%@50mA Collector-emitter voltage: 55V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1424 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6286-4T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-500%@50mA Collector-emitter voltage: 55V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 380 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH628A-3 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-300%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 3.5µs Turn-off time: 5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1811 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH628A-4 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1995 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH628A-4X016 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 6µs Turn-off time: 5.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 925 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6316T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Collector-emitter voltage: 25V Case: SO8 Turn-on time: 0.8µs Turn-off time: 0.8µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1298 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6343T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Collector-emitter voltage: 25V Case: SO8 Turn-on time: 0.8µs Turn-off time: 0.8µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1252 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH6345 | VISHAY |
SFH6345 Optocouplers - analog output |
auf Bestellung 2751 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH6345-X007 | VISHAY |
SFH6345-X007 Optocouplers - analog output |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH6345-X009T | VISHAY |
SFH6345-X009T Optocouplers - analog output |
auf Bestellung 538 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH6345-X016 | VISHAY |
SFH6345-X016 Optocouplers - analog output |
auf Bestellung 1536 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH690ABT | VISHAY |
SFH690ABT Optocouplers - analog output |
auf Bestellung 777 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH690BT | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Manufacturer series: SFH690 Case: SOP4 Mounting: SMD Type of optocoupler: optocoupler Number of channels: 1 Turn-off time: 3µs Turn-on time: 5µs Collector-emitter voltage: 70V CTR@If: 100-300%@5mA Insulation voltage: 3.75kV Kind of output: transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4339 Stücke: Lieferzeit 7-14 Tag (e) |
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SFH6916 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Case: SOP16 Number of channels: 4 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 4µs CTR@If: 300%@5mA Collector-emitter voltage: 70V Insulation voltage: 3.75kV Kind of output: transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 551 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH691AT | VISHAY |
SFH691AT Optocouplers - analog output |
auf Bestellung 884 Stücke: Lieferzeit 7-14 Tag (e) |
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SG3R2200JR18 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 220mΩ; 3W; ±5%; 100V; Ø0.8x25mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 0.22Ω Power: 3W Tolerance: ±5% Operating voltage: 100V Body dimensions: Ø4.8x13mm Operating temperature: -55...250°C Temperature coefficient: 150ppm/°C Length: 13mm Diameter: 4.8mm Leads dimensions: Ø0.8x25mm Resistor features: non-flammable Leads: axial Anzahl je Verpackung: 1 Stücke |
auf Bestellung 384 Stücke: Lieferzeit 7-14 Tag (e) |
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SG347R00JR18 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; 100V; Ø0.8x25mm; Ø4.8x13mm Type of resistor: wire-wound Resistance: 47Ω Power: 3W Tolerance: ±5% Operating voltage: 100V Temperature coefficient: 150ppm/°C Body dimensions: Ø4.8x13mm Length: 13mm Leads: axial Resistor features: non-flammable Mounting: THT Operating temperature: -55...250°C Leads dimensions: Ø0.8x25mm Diameter: 4.8mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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SGL41-20-E3/96 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 20V Type of diode: Schottky rectifying Case: DO213AB; GL41; MELF plastic Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: 7 inch reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1254 Stücke: Lieferzeit 7-14 Tag (e) |
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SGL41-40-E3/96 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 40V Type of diode: Schottky rectifying Case: DO213AB; GL41; MELF plastic Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: 7 inch reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 903 Stücke: Lieferzeit 7-14 Tag (e) |
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SGL41-60-E3/96 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 60V Type of diode: Schottky rectifying Case: DO213AB; GL41; MELF plastic Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 588 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1012CR-T1-GE3 | VISHAY |
SI1012CR-T1-GE3 SMD N channel transistors |
auf Bestellung 2859 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1012R-T1-GE3 | VISHAY |
SI1012R-T1-GE3 SMD N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1013CX-T1-GE3 | VISHAY |
SI1013CX-T1-GE3 SMD P channel transistors |
auf Bestellung 955 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1016CX-T1-GE3 | VISHAY |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair Kind of transistor: complementary pair Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: SC89; SOT563 Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 2/2.5nC Power dissipation: 0.14W On-state resistance: 396/756mΩ Drain current: 0.49/-0.49A Pulsed drain current: 2A Gate-source voltage: ±8V Drain-source voltage: 20/-20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2330 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1022R-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A; ESD Version: ESD Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SC75A Gate charge: 0.6nC Power dissipation: 0.13W Drain current: 0.24A On-state resistance: 1.25Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3230 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1032R-T1-GE3 | VISHAY |
SI1032R-T1-GE3 SMD N channel transistors |
auf Bestellung 2843 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1036X-T1-GE3 | VISHAY |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Case: SC89; SOT563 Technology: TrenchFET® Gate charge: 2nC Power dissipation: 0.22W Drain current: 0.61A On-state resistance: 1.1Ω Pulsed drain current: 2A Gate-source voltage: ±8V Drain-source voltage: 30V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1967 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1062X-T1-GE3 | VISHAY |
SI1062X-T1-GE3 SMD N channel transistors |
auf Bestellung 4844 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1302DL-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.48A Pulsed drain current: 1.5A Power dissipation: 0.18W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 0.48Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1308EDL-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SC70; SOT323 Gate charge: 4.1nC On-state resistance: 132mΩ Power dissipation: 0.3W Drain current: 1.4A Pulsed drain current: 6A Gate-source voltage: ±12V Drain-source voltage: 30V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1840 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI1317DL-T1-GE3 | VISHAY |
SI1317DL-T1-GE3 SMD P channel transistors |
auf Bestellung 1836 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1442DH-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Polarisation: unipolar Case: SC70-6; SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 33nC On-state resistance: 30mΩ Power dissipation: 2.8W Drain current: 4A Gate-source voltage: ±8V Drain-source voltage: 12V Pulsed drain current: 20A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2720 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1443EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD Case: SC70; SOT323 Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Drain-source voltage: -30V Pulsed drain current: -15A Drain current: -4A Gate charge: 28nC On-state resistance: 54mΩ Power dissipation: 1.8W Gate-source voltage: ±12V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1850 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1902CDL-T1-GE3 | VISHAY |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.27W Case: SC70-6; SOT363 Gate-source voltage: ±12V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2340 Stücke: Lieferzeit 7-14 Tag (e) |
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Si2300DS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Pulsed drain current: 15A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 68mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 861 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2301BDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2301CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3519 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2302CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1395 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2302DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2377 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2303CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 930 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2304DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 2.1nC On-state resistance: 75mΩ Power dissipation: 1.1W Drain current: 3.3A Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1705 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2305CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3376 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2306BDS-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2002 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Gate charge: 6.2nC On-state resistance: 138mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
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SI2308BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Gate charge: 6.8nC On-state resistance: 192mΩ Power dissipation: 1.06W Drain current: 1.8A Pulsed drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2308CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Gate charge: 4nC On-state resistance: 144mΩ Power dissipation: 1W Drain current: 2.6A Pulsed drain current: 6A Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8999 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2309CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -8A Drain current: -1.3A Gate charge: 4.1nC On-state resistance: 0.45Ω Power dissipation: 1.7W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12310 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2312CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 369 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2315BDS-T1-E3 | VISHAY |
SI2315BDS-T1-E3 SMD P channel transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2315BDS-T1-GE3 | VISHAY |
SI2315BDS-T1-GE3 SMD P channel transistors |
auf Bestellung 2260 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1553 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318DS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1397 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.5A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4062 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319DDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.6A Pulsed drain current: -15A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI2319DS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.4A Pulsed drain current: -12A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2141 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319DS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.4A Pulsed drain current: -12A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1928 Stücke: Lieferzeit 7-14 Tag (e) |
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| SFH620A-3 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 4.5%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 4.5%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 116+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 161+ | 0.45 EUR |
| 184+ | 0.39 EUR |
| 207+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| SFH620A-3X006 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 153 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 106+ | 0.68 EUR |
| 116+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 133+ | 0.54 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| SFH6286-2T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 959 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 78+ | 0.92 EUR |
| 104+ | 0.69 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.46 EUR |
| 2000+ | 0.38 EUR |
| SFH6286-3T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3560 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 70+ | 1.02 EUR |
| 88+ | 0.82 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.48 EUR |
| SFH6286-4 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-500%@50mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-500%@50mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1424 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 96+ | 0.75 EUR |
| 113+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 140+ | 0.51 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.38 EUR |
| SFH6286-4T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-500%@50mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-500%@50mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 75+ | 0.97 EUR |
| 102+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.44 EUR |
| 3000+ | 0.41 EUR |
| SFH628A-3 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 3.5µs
Turn-off time: 5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 3.5µs
Turn-off time: 5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1811 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 133+ | 0.54 EUR |
| 138+ | 0.52 EUR |
| 145+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| 166+ | 0.43 EUR |
| 500+ | 0.38 EUR |
| SFH628A-4 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1995 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 76+ | 0.94 EUR |
| 94+ | 0.76 EUR |
| 102+ | 0.7 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.56 EUR |
| 2000+ | 0.53 EUR |
| SFH628A-4X016 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 925 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 72+ | 1 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.58 EUR |
| 4000+ | 0.55 EUR |
| SFH6316T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 25V
Case: SO8
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 25V
Case: SO8
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 72+ | 1 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.64 EUR |
| SFH6343T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 25V
Case: SO8
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; Uce: 25V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 25V
Case: SO8
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1252 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.14 EUR |
| 42+ | 1.71 EUR |
| 54+ | 1.34 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.78 EUR |
| SFH6345 |
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Hersteller: VISHAY
SFH6345 Optocouplers - analog output
SFH6345 Optocouplers - analog output
auf Bestellung 2751 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 1000+ | 0.75 EUR |
| SFH6345-X007 |
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Hersteller: VISHAY
SFH6345-X007 Optocouplers - analog output
SFH6345-X007 Optocouplers - analog output
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.43 EUR |
| 93+ | 0.77 EUR |
| 99+ | 0.73 EUR |
| SFH6345-X009T |
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Hersteller: VISHAY
SFH6345-X009T Optocouplers - analog output
SFH6345-X009T Optocouplers - analog output
auf Bestellung 538 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.49 EUR |
| 99+ | 0.73 EUR |
| 105+ | 0.69 EUR |
| SFH6345-X016 |
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Hersteller: VISHAY
SFH6345-X016 Optocouplers - analog output
SFH6345-X016 Optocouplers - analog output
auf Bestellung 1536 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 87+ | 0.83 EUR |
| 92+ | 0.78 EUR |
| 6000+ | 0.76 EUR |
| SFH690ABT |
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Hersteller: VISHAY
SFH690ABT Optocouplers - analog output
SFH690ABT Optocouplers - analog output
auf Bestellung 777 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.72 EUR |
| 304+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| SFH690BT |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Manufacturer series: SFH690
Case: SOP4
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Turn-off time: 3µs
Turn-on time: 5µs
Collector-emitter voltage: 70V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
Kind of output: transistor
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Manufacturer series: SFH690
Case: SOP4
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Turn-off time: 3µs
Turn-on time: 5µs
Collector-emitter voltage: 70V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
Kind of output: transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4339 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 136+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 305+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| SFH6916 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP16
Number of channels: 4
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 4µs
CTR@If: 300%@5mA
Collector-emitter voltage: 70V
Insulation voltage: 3.75kV
Kind of output: transistor
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP16
Number of channels: 4
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 4µs
CTR@If: 300%@5mA
Collector-emitter voltage: 70V
Insulation voltage: 3.75kV
Kind of output: transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 551 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 50+ | 1.43 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.17 EUR |
| 80+ | 1.07 EUR |
| 120+ | 1.02 EUR |
| SFH691AT |
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Hersteller: VISHAY
SFH691AT Optocouplers - analog output
SFH691AT Optocouplers - analog output
auf Bestellung 884 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 173+ | 0.41 EUR |
| 182+ | 0.39 EUR |
| 500+ | 0.38 EUR |
| SG3R2200JR18 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 220mΩ; 3W; ±5%; 100V; Ø0.8x25mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 100V
Body dimensions: Ø4.8x13mm
Operating temperature: -55...250°C
Temperature coefficient: 150ppm/°C
Length: 13mm
Diameter: 4.8mm
Leads dimensions: Ø0.8x25mm
Resistor features: non-flammable
Leads: axial
Anzahl je Verpackung: 1 Stücke
Category: Power resistors
Description: Resistor: wire-wound; THT; 220mΩ; 3W; ±5%; 100V; Ø0.8x25mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 100V
Body dimensions: Ø4.8x13mm
Operating temperature: -55...250°C
Temperature coefficient: 150ppm/°C
Length: 13mm
Diameter: 4.8mm
Leads dimensions: Ø0.8x25mm
Resistor features: non-flammable
Leads: axial
Anzahl je Verpackung: 1 Stücke
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 53+ | 1.36 EUR |
| 63+ | 1.14 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.97 EUR |
| SG347R00JR18 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; 100V; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 100V
Temperature coefficient: 150ppm/°C
Body dimensions: Ø4.8x13mm
Length: 13mm
Leads: axial
Resistor features: non-flammable
Mounting: THT
Operating temperature: -55...250°C
Leads dimensions: Ø0.8x25mm
Diameter: 4.8mm
Anzahl je Verpackung: 1 Stücke
Category: Power resistors
Description: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; 100V; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 100V
Temperature coefficient: 150ppm/°C
Body dimensions: Ø4.8x13mm
Length: 13mm
Leads: axial
Resistor features: non-flammable
Mounting: THT
Operating temperature: -55...250°C
Leads dimensions: Ø0.8x25mm
Diameter: 4.8mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 42+ | 1.72 EUR |
| 55+ | 1.32 EUR |
| 200+ | 0.92 EUR |
| SGL41-20-E3/96 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 20V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 20V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1254 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 122+ | 0.59 EUR |
| 135+ | 0.53 EUR |
| 162+ | 0.44 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.33 EUR |
| SGL41-40-E3/96 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 40V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 40V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 903 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 140+ | 0.51 EUR |
| 185+ | 0.39 EUR |
| 205+ | 0.35 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| SGL41-60-E3/96 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 60V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO213AB,GL41,MELF plastic; SMD; 60V
Type of diode: Schottky rectifying
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 588 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 177+ | 0.41 EUR |
| 186+ | 0.39 EUR |
| 195+ | 0.37 EUR |
| 206+ | 0.35 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.28 EUR |
| SI1012CR-T1-GE3 |
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Hersteller: VISHAY
SI1012CR-T1-GE3 SMD N channel transistors
SI1012CR-T1-GE3 SMD N channel transistors
auf Bestellung 2859 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 527+ | 0.14 EUR |
| 538+ | 0.13 EUR |
| SI1012R-T1-GE3 |
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Hersteller: VISHAY
SI1012R-T1-GE3 SMD N channel transistors
SI1012R-T1-GE3 SMD N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 58+ | 1.23 EUR |
| 158+ | 0.46 EUR |
| 3000+ | 0.27 EUR |
| SI1013CX-T1-GE3 |
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Hersteller: VISHAY
SI1013CX-T1-GE3 SMD P channel transistors
SI1013CX-T1-GE3 SMD P channel transistors
auf Bestellung 955 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 194+ | 0.37 EUR |
| 782+ | 0.092 EUR |
| 820+ | 0.087 EUR |
| 6000+ | 0.086 EUR |
| SI1016CX-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SC89; SOT563
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 2/2.5nC
Power dissipation: 0.14W
On-state resistance: 396/756mΩ
Drain current: 0.49/-0.49A
Pulsed drain current: 2A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SC89; SOT563
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 2/2.5nC
Power dissipation: 0.14W
On-state resistance: 396/756mΩ
Drain current: 0.49/-0.49A
Pulsed drain current: 2A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2330 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 171+ | 0.42 EUR |
| 239+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| SI1022R-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A; ESD
Version: ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC75A
Gate charge: 0.6nC
Power dissipation: 0.13W
Drain current: 0.24A
On-state resistance: 1.25Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A; ESD
Version: ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC75A
Gate charge: 0.6nC
Power dissipation: 0.13W
Drain current: 0.24A
On-state resistance: 1.25Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3230 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 161+ | 0.45 EUR |
| 188+ | 0.38 EUR |
| 204+ | 0.35 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 1500+ | 0.24 EUR |
| SI1032R-T1-GE3 |
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Hersteller: VISHAY
SI1032R-T1-GE3 SMD N channel transistors
SI1032R-T1-GE3 SMD N channel transistors
auf Bestellung 2843 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.52 EUR |
| 309+ | 0.23 EUR |
| 327+ | 0.22 EUR |
| 1500+ | 0.21 EUR |
| SI1036X-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SC89; SOT563
Technology: TrenchFET®
Gate charge: 2nC
Power dissipation: 0.22W
Drain current: 0.61A
On-state resistance: 1.1Ω
Pulsed drain current: 2A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SC89; SOT563
Technology: TrenchFET®
Gate charge: 2nC
Power dissipation: 0.22W
Drain current: 0.61A
On-state resistance: 1.1Ω
Pulsed drain current: 2A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1967 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 183+ | 0.39 EUR |
| 206+ | 0.35 EUR |
| 345+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| SI1062X-T1-GE3 |
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Hersteller: VISHAY
SI1062X-T1-GE3 SMD N channel transistors
SI1062X-T1-GE3 SMD N channel transistors
auf Bestellung 4844 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 234+ | 0.31 EUR |
| 798+ | 0.09 EUR |
| 844+ | 0.085 EUR |
| 6000+ | 0.082 EUR |
| SI1302DL-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 150+ | 0.48 EUR |
| 168+ | 0.43 EUR |
| 350+ | 0.2 EUR |
| 371+ | 0.19 EUR |
| SI1308EDL-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Gate charge: 4.1nC
On-state resistance: 132mΩ
Power dissipation: 0.3W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Gate charge: 4.1nC
On-state resistance: 132mΩ
Power dissipation: 0.3W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1840 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 205+ | 0.35 EUR |
| 242+ | 0.3 EUR |
| 277+ | 0.26 EUR |
| 315+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| SI1317DL-T1-GE3 |
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Hersteller: VISHAY
SI1317DL-T1-GE3 SMD P channel transistors
SI1317DL-T1-GE3 SMD P channel transistors
auf Bestellung 1836 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| SI1442DH-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Case: SC70-6; SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Gate charge: 33nC
On-state resistance: 30mΩ
Power dissipation: 2.8W
Drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Case: SC70-6; SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Gate charge: 33nC
On-state resistance: 30mΩ
Power dissipation: 2.8W
Drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 272+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 439+ | 0.16 EUR |
| 538+ | 0.13 EUR |
| SI1443EDH-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD
Case: SC70; SOT323
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -4A
Gate charge: 28nC
On-state resistance: 54mΩ
Power dissipation: 1.8W
Gate-source voltage: ±12V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD
Case: SC70; SOT323
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -4A
Gate charge: 28nC
On-state resistance: 54mΩ
Power dissipation: 1.8W
Gate-source voltage: ±12V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 173+ | 0.41 EUR |
| 211+ | 0.34 EUR |
| 246+ | 0.29 EUR |
| 283+ | 0.25 EUR |
| 336+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| SI1902CDL-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70-6; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70-6; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 281+ | 0.25 EUR |
| 327+ | 0.22 EUR |
| 477+ | 0.15 EUR |
| Si2300DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 861 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 313+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| 353+ | 0.2 EUR |
| 374+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| SI2301BDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| SI2301CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3519 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 174+ | 0.41 EUR |
| 200+ | 0.36 EUR |
| 275+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| SI2302CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1395 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 172+ | 0.42 EUR |
| 218+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| SI2302DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2377 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 211+ | 0.34 EUR |
| 237+ | 0.3 EUR |
| 296+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.13 EUR |
| SI2303CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 930 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 142+ | 0.5 EUR |
| 188+ | 0.38 EUR |
| 214+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.17 EUR |
| SI2304DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1705 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 254+ | 0.28 EUR |
| 343+ | 0.21 EUR |
| 388+ | 0.18 EUR |
| 511+ | 0.14 EUR |
| SI2305CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3376 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 286+ | 0.25 EUR |
| 311+ | 0.23 EUR |
| 345+ | 0.21 EUR |
| 374+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| SI2306BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2002 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 189+ | 0.38 EUR |
| 200+ | 0.36 EUR |
| SI2307CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
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| SI2308BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 192mΩ
Power dissipation: 1.06W
Drain current: 1.8A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 192mΩ
Power dissipation: 1.06W
Drain current: 1.8A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.22 EUR |
| SI2308CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 144mΩ
Power dissipation: 1W
Drain current: 2.6A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 144mΩ
Power dissipation: 1W
Drain current: 2.6A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8999 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 258+ | 0.28 EUR |
| 311+ | 0.23 EUR |
| 407+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| SI2309CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -8A
Drain current: -1.3A
Gate charge: 4.1nC
On-state resistance: 0.45Ω
Power dissipation: 1.7W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -8A
Drain current: -1.3A
Gate charge: 4.1nC
On-state resistance: 0.45Ω
Power dissipation: 1.7W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12310 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 140+ | 0.51 EUR |
| 183+ | 0.39 EUR |
| 208+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 1500+ | 0.2 EUR |
| SI2312CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 151+ | 0.47 EUR |
| 171+ | 0.42 EUR |
| 266+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| SI2315BDS-T1-E3 |
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Hersteller: VISHAY
SI2315BDS-T1-E3 SMD P channel transistors
SI2315BDS-T1-E3 SMD P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| 52+ | 1.37 EUR |
| 142+ | 0.5 EUR |
| 3000+ | 0.3 EUR |
| SI2315BDS-T1-GE3 |
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Hersteller: VISHAY
SI2315BDS-T1-GE3 SMD P channel transistors
SI2315BDS-T1-GE3 SMD P channel transistors
auf Bestellung 2260 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 257+ | 0.28 EUR |
| 271+ | 0.26 EUR |
| SI2318CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1553 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 210+ | 0.34 EUR |
| 244+ | 0.29 EUR |
| 348+ | 0.21 EUR |
| 397+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| SI2318DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 171+ | 0.42 EUR |
| 190+ | 0.38 EUR |
| 243+ | 0.29 EUR |
| 257+ | 0.28 EUR |
| SI2319CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4062 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 139+ | 0.52 EUR |
| 200+ | 0.36 EUR |
| 500+ | 0.31 EUR |
| SI2319DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| SI2319DS-T1-E3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2141 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 106+ | 0.68 EUR |
| 117+ | 0.61 EUR |
| 132+ | 0.54 EUR |
| 500+ | 0.49 EUR |
| SI2319DS-T1-GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1928 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 104+ | 0.69 EUR |
| 133+ | 0.54 EUR |
| 146+ | 0.49 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.41 EUR |





















