| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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RCS1206150RFKEA | VISHAY |
Description: VISHAY - RCS1206150RFKEA - Chipwiderstand, Oberflächenmontage, 150 ohm, ± 1%, 500 mW, 1206 [Metrisch 3216]tariffCode: 85332100 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 4190 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL215099101E3 | VISHAY |
Description: VISHAY - MAL215099101E3 - Aluminium-Elektrolytkondensatoren, SMD, Becher, radial - SMD, 100 µF, 50 VtariffCode: 85322200 Produkthöhe: 10mm Bauform / Gehäuse des Kondensators: Becher, radial - SMD Polarität: Polarisiert euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kapazitätstoleranz: ± 20% Qualifikation: AEC-Q200 isCanonical: N MSL: - Lebensdauer bei Temperatur: 2500 Stunden bei 105°C Betriebstemperatur, min.: -55°C Äquivalenter Serienwiderstand (ESR): - Produktlänge: - SVHC: No SVHC (25-Jun-2025) Kapazität: 100µF Spannung (DC): 50V Rippelstrom: 490mA Produktpalette: 150 CRZ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Produktdurchmesser: 10mm Betriebstemperatur, max.: 105°C Kondensatoranschlüsse: Lötanschlüsse Produktbreite: - |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08050000Z0EBC | VISHAY |
Description: VISHAY - CRCW08050000Z0EBC - Null-Ohm-Widerstand, Jumper, 0805 [Metrisch 2012], Dickschichtwiderstand, 250 mW, 2.5 AtariffCode: 85332100 Produkthöhe: 0.5mm euEccn: NLR rohsCompliant: Y-EX Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012] Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Widerstandsmontage: Oberflächenmontage Nennleistung: 250mW isCanonical: Y Betriebstemperatur, min.: -55°C Nennstrom: 2.5A Produktlänge: 2mm Produktpalette: CRCW e3 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 155°C Produktbreite: 1.25mm |
auf Bestellung 49900 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | VISHAY |
Description: VISHAY - SIS443DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.0117 ohm, PowerPAK 1212, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 52W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0117ohm |
auf Bestellung 1071 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA35DN-T1-GE3 | VISHAY |
Description: VISHAY - SISA35DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 16 A, 0.019 ohm, PowerPAK 1212, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.2V Verlustleistung: 24W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.019ohm |
auf Bestellung 4120 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS73DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 16.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 65.8W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.125ohm |
auf Bestellung 2796 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS73DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 16.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 65.8W Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 65.8W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal usEccn: EAR99 Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.1ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.125ohm |
auf Bestellung 2796 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW1206392RFKEA. | VISHAY |
Description: VISHAY - CRCW1206392RFKEA. - Chipwiderstand, Oberflächenmontage, 392 ohm, ± 1%, 250 mW, 1206 [Metrisch 3216]tariffCode: 85332100 euEccn: NLR rohsCompliant: Y-EX Bauform/Gehäuse des Widerstands: 1206 [Metrisch 3216] Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q200 Nennleistung: 250mW Widerstandstyp: Universell isCanonical: N Widerstand: 392ohm Betriebstemperatur, min.: -55°C Widerstandstoleranz: ± 1% Temperaturkoeffizient: ± 100ppm/K Produktlänge: 3.2mm SVHC: No SVHC (04-Feb-2026) Produktpalette: CRCW e3 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Nennspannung: 200V Betriebstemperatur, max.: 155°C Produktbreite: 1.6mm |
auf Bestellung 3524 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54C-E3-08 | VISHAY |
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °CtariffCode: 85411000 Bauform - Diode: SOT-23 Durchlassstoßstrom: 600mA euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - isCanonical: Y Durchlassspannung, max.: 800mV Sperrverzögerungszeit: 5ns Durchschnittlicher Durchlassstrom: 200mA SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Periodische Spitzensperrspannung: 30V Betriebstemperatur, max.: 125°C |
auf Bestellung 89372 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54C-E3-08 | VISHAY |
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °CtariffCode: 85411000 Bauform - Diode: SOT-23 Durchlassstoßstrom: 600mA euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - isCanonical: N Durchlassspannung, max.: 800mV Sperrverzögerungszeit: 5ns Durchschnittlicher Durchlassstrom: 200mA SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Periodische Spitzensperrspannung: 30V Betriebstemperatur, max.: 125°C |
auf Bestellung 89372 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC238330304 | VISHAY |
Description: VISHAY - BFC238330304 - Leistungs-Folienkondensator, Doppelt metallisiertes PP, Radiales Gehäuse, 2 Pins, 0.3 µF, ± 5%tariffCode: 85322500 Betriebstemperatur, max.: 105°C Anschlussabstand: 27.5mm Ausgang (kvar): - productTraceability: Yes-Date/Lot Code Betriebstemperatur, min.: -55°C Produktlänge: 31mm Produkthöhe: 25mm Spannung (AC): 350V Kapazitätstoleranz: ± 5% hazardous: false Kapazität: 0.3µF Typische Anwendungen: Hochstrom, Impuls Feuchtigkeitsklasse: GRADE II (Testbedingung A) Produktpalette: MMKP383 Series usEccn: EAR99 Bauform / Gehäuse des Kondensators: Radiales Gehäuse, 2 Pins Dielektrikum: Doppelt metallisiertes PP Kondensatormontage: Durchsteckmontage rohsCompliant: YES SVHC: No SVHC (04-Feb-2026) Kondensatoranschlüsse: PC-Pin dv/dt: 900V/µs Produktdurchmesser: - Qualifikation: - Spannung (DC): 1kV Produktbreite: 15mm Äquivalenter Serienwiderstand (ESR): - RMS-Strom Irms: - Rippelstrom: - Spitzenstrom: - rohsPhthalatesCompliant: YES isCanonical: Y euEccn: NLR |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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VOM618A-8X001T | VISHAY |
Description: VISHAY - VOM618A-8X001T - Optokoppler, Transistorausgang, 1 Kanal, SOP, 4 Pin(s), 60 mA, 3.75 kV, 130 %tariffCode: 85414900 euEccn: NLR rohsCompliant: YES Anzahl der Kanäle: 1 Kanal hazardous: false rohsPhthalatesCompliant: YES CTR, min.: 130% isCanonical: Y Isolationsspannung: 3.75kV Durchlassstrom If, max.: 60mA SVHC: No SVHC (25-Jun-2025) Kollektor-Emitter-Spannung V(br)ceo: 80V Bauform - Optokoppler: SOP Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 |
auf Bestellung 2371 Stücke: Lieferzeit 14-21 Tag (e) |
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PLZ20D-HG3_A/H | VISHAY |
Description: VISHAY - PLZ20D-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, OberflächenmontagetariffCode: 85411000 Bauform - Diode: DO-219AC (MicroSMF) euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Verlustleistung: 500mW SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 2Pin(s) Produktpalette: PLZ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 150°C Zener-Spannung, nom.: 20V |
auf Bestellung 21985 Stücke: Lieferzeit 14-21 Tag (e) |
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PLZ20A-HG3_A/H | VISHAY |
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, OberflächenmontagetariffCode: 85411000 Bauform - Diode: DO-219AC (MicroSMF) euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Verlustleistung: 500mW SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 2Pin(s) Produktpalette: PLZ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 150°C Zener-Spannung, nom.: 20V |
auf Bestellung 22285 Stücke: Lieferzeit 14-21 Tag (e) |
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PLZ20A-HG3_A/H | VISHAY |
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, OberflächenmontagetariffCode: 85411000 Bauform - Diode: DO-219AC (MicroSMF) euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Verlustleistung: 500mW SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 2Pin(s) Produktpalette: PLZ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 150°C Zener-Spannung, nom.: 20V |
auf Bestellung 22285 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.5kV; 2.5A; Ifsm: 50A; DO201AD; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 2.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Max. forward impulse current: 50A Case: DO201AD Kind of package: 13 inch reel Reverse recovery time: 20µs Manufacturer standard package: 1400pcs. Max. forward voltage: 1.6V Max. load current: 10A Leakage current: 0.2mA Capacitance: 40pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SIHF18N50D-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 53A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRFZ48RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 291A |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1556 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1480 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1610 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF520PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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6N137-X007T | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Collector-emitter voltage: 7V Case: Gull wing 8 Turn-on time: 27ns Turn-off time: 7ns Output voltage: 7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS14-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. |
auf Bestellung 4767 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. |
auf Bestellung 5069 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MB6S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 4520 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06034K70FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V Type of resistor: thick film Resistance: 4.7kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Manufacturer series: CRCW0603 |
auf Bestellung 665700 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE100CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 10.9A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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SS24HE3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 7 inch reel Manufacturer standard package: 750pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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HRC00FE1002WTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 10uF; 450VDC; ±20%; 10000h; -25÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 450V DC Tolerance: ±20% Service life: 10000h Operating temperature: -25...105°C Dimensions: 12.5x20mm |
auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL204217109E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Service life: 10000h Operating temperature: -40...85°C Height: 30mm Diameter: 12.5mm Leads: axial |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL204272109E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm Tolerance: ±20% Diameter: 12.5mm Mounting: THT Kind of capacitor: low ESR Service life: 10000h Operating temperature: -40...105°C Leads: axial Body dimensions: Ø12.5x30mm Type of capacitor: electrolytic Capacitance: 10µF Height: 30mm Operating voltage: 450V DC |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS54DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Case: PowerPAK® 1212-8 Mounting: SMD Pulsed drain current: 300A Power dissipation: 42W Gate charge: 72nC Polarisation: unipolar Technology: TrenchFET® Drain current: 148.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -12...16V Kind of package: reel; tape On-state resistance: 1.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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CRCW120610K0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...125°C |
auf Bestellung 18857 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 191300 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...125°C |
auf Bestellung 7749 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4001-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: 13 inch reel Max. forward voltage: 1.1V Capacitance: 15pF Manufacturer standard package: 5500pcs. |
auf Bestellung 1939 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54WS-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. Max. load current: 0.3A |
auf Bestellung 2178 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: 13 inch reel Max. forward voltage: 1.1V Capacitance: 15pF Manufacturer standard package: 5500pcs. |
auf Bestellung 10528 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ammo Pack Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: Ammo Pack Max. forward voltage: 1.1V Capacitance: 15pF |
auf Bestellung 25616 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: 13 inch reel Max. forward voltage: 1.1V Capacitance: 8pF Reverse recovery time: 2µs Manufacturer standard package: 5500pcs. Features of semiconductor devices: glass passivated |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Leakage current: 2µA Manufacturer standard package: 3000pcs. |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Leakage current: 2µA Manufacturer standard package: 3000pcs. Application: automotive industry |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.24V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. Power dissipation: 0.23W Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Kind of package: 7 inch reel Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Manufacturer standard package: 3000pcs. Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Leakage current: 2µA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Mounting: THT Manufacturer series: T63XB Type of potentiometer: mounting Number of electrical turns: 13 ±2 Track material: cermet Characteristics: linear Potentiometer standard - inch: 1/4" Kind of potentiometer: multiturn Temperature coefficient: 100ppm/°C Number of mechanical turns: 15 ±5 Torque: 1Ncm Operating voltage: 250V IP rating: IP67 Terminal pitch: 2.5x2.5mm |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Mounting: THT Manufacturer series: T63YB Type of potentiometer: mounting Number of electrical turns: 13 ±2 Track material: cermet Characteristics: linear Potentiometer standard - inch: 1/4" Kind of potentiometer: multiturn Temperature coefficient: 100ppm/°C Number of mechanical turns: 15 ±5 Torque: 1Ncm Operating voltage: 250V IP rating: IP67 Terminal pitch: 2.5x2.5mm |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Terminal pitch: 2.5x2.5mm Mounting: THT Manufacturer series: T93XB Type of potentiometer: mounting Number of electrical turns: 19 ±2 Track material: cermet Engineering PN: 64Z; 67Z; 3296Z Characteristics: linear Potentiometer standard - inch: 3/8" Kind of potentiometer: multiturn Temperature coefficient: 100ppm/°C Number of mechanical turns: 22 ±5 Torque: 1.5Ncm Operating voltage: 250V IP rating: IP67 |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Terminal pitch: 2.5x2.5mm Mounting: THT Manufacturer series: T93YB Type of potentiometer: mounting Number of electrical turns: 19 ±2 Track material: cermet Engineering PN: 64Y; 67Y; 3296Y Characteristics: linear Potentiometer standard - inch: 3/8" Kind of potentiometer: multiturn Temperature coefficient: 100ppm/°C Number of mechanical turns: 22 ±5 Torque: 1.5Ncm Operating voltage: 250V IP rating: IP67 |
auf Bestellung 2693 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Electrical mounting: THT Leads: connectors FASTON Max. off-state voltage: 0.6kV Load current: 35A Kind of package: bulk Leads dimensions: 6.3x0.8mm Case: D-63 Type of bridge rectifier: three-phase Max. forward impulse current: 475A Max. forward voltage: 1.19V Version: square |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RCS1206150RFKEA |
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Hersteller: VISHAY
Description: VISHAY - RCS1206150RFKEA - Chipwiderstand, Oberflächenmontage, 150 ohm, ± 1%, 500 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - RCS1206150RFKEA - Chipwiderstand, Oberflächenmontage, 150 ohm, ± 1%, 500 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 4190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1395+ | 0.18 EUR |
| 1877+ | 0.12 EUR |
| 2156+ | 0.1 EUR |
| 2353+ | 0.09 EUR |
| 2526+ | 0.084 EUR |
| MAL215099101E3 |
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Hersteller: VISHAY
Description: VISHAY - MAL215099101E3 - Aluminium-Elektrolytkondensatoren, SMD, Becher, radial - SMD, 100 µF, 50 V
tariffCode: 85322200
Produkthöhe: 10mm
Bauform / Gehäuse des Kondensators: Becher, radial - SMD
Polarität: Polarisiert
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kapazitätstoleranz: ± 20%
Qualifikation: AEC-Q200
isCanonical: N
MSL: -
Lebensdauer bei Temperatur: 2500 Stunden bei 105°C
Betriebstemperatur, min.: -55°C
Äquivalenter Serienwiderstand (ESR): -
Produktlänge: -
SVHC: No SVHC (25-Jun-2025)
Kapazität: 100µF
Spannung (DC): 50V
Rippelstrom: 490mA
Produktpalette: 150 CRZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Produktdurchmesser: 10mm
Betriebstemperatur, max.: 105°C
Kondensatoranschlüsse: Lötanschlüsse
Produktbreite: -
Description: VISHAY - MAL215099101E3 - Aluminium-Elektrolytkondensatoren, SMD, Becher, radial - SMD, 100 µF, 50 V
tariffCode: 85322200
Produkthöhe: 10mm
Bauform / Gehäuse des Kondensators: Becher, radial - SMD
Polarität: Polarisiert
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kapazitätstoleranz: ± 20%
Qualifikation: AEC-Q200
isCanonical: N
MSL: -
Lebensdauer bei Temperatur: 2500 Stunden bei 105°C
Betriebstemperatur, min.: -55°C
Äquivalenter Serienwiderstand (ESR): -
Produktlänge: -
SVHC: No SVHC (25-Jun-2025)
Kapazität: 100µF
Spannung (DC): 50V
Rippelstrom: 490mA
Produktpalette: 150 CRZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Produktdurchmesser: 10mm
Betriebstemperatur, max.: 105°C
Kondensatoranschlüsse: Lötanschlüsse
Produktbreite: -
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.4 EUR |
| 200+ | 2.36 EUR |
| CRCW08050000Z0EBC |
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Hersteller: VISHAY
Description: VISHAY - CRCW08050000Z0EBC - Null-Ohm-Widerstand, Jumper, 0805 [Metrisch 2012], Dickschichtwiderstand, 250 mW, 2.5 A
tariffCode: 85332100
Produkthöhe: 0.5mm
euEccn: NLR
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Widerstandsmontage: Oberflächenmontage
Nennleistung: 250mW
isCanonical: Y
Betriebstemperatur, min.: -55°C
Nennstrom: 2.5A
Produktlänge: 2mm
Produktpalette: CRCW e3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
Description: VISHAY - CRCW08050000Z0EBC - Null-Ohm-Widerstand, Jumper, 0805 [Metrisch 2012], Dickschichtwiderstand, 250 mW, 2.5 A
tariffCode: 85332100
Produkthöhe: 0.5mm
euEccn: NLR
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Widerstandsmontage: Oberflächenmontage
Nennleistung: 250mW
isCanonical: Y
Betriebstemperatur, min.: -55°C
Nennstrom: 2.5A
Produktlänge: 2mm
Produktpalette: CRCW e3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
auf Bestellung 49900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3746+ | 0.067 EUR |
| 4609+ | 0.05 EUR |
| 8475+ | 0.025 EUR |
| 10990+ | 0.019 EUR |
| 12821+ | 0.017 EUR |
| 14926+ | 0.014 EUR |
| SIS443DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SIS443DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.0117 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 52W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0117ohm
Description: VISHAY - SIS443DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.0117 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 52W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0117ohm
auf Bestellung 1071 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 6.27 EUR |
| 63+ | 3.71 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.77 EUR |
| SISA35DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SISA35DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 16 A, 0.019 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung: 24W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.019ohm
Description: VISHAY - SISA35DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 16 A, 0.019 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung: 24W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.019ohm
auf Bestellung 4120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 126+ | 2 EUR |
| 276+ | 0.84 EUR |
| 314+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1500+ | 0.51 EUR |
| SISS73DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 5.62 EUR |
| 70+ | 3.34 EUR |
| 103+ | 2.08 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.57 EUR |
| SISS73DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 65.8W
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.1ohm
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
Description: VISHAY - SISS73DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 16.2 A, 0.125 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 65.8W
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.1ohm
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.34 EUR |
| 103+ | 2.08 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.57 EUR |
| CRCW1206392RFKEA. |
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Hersteller: VISHAY
Description: VISHAY - CRCW1206392RFKEA. - Chipwiderstand, Oberflächenmontage, 392 ohm, ± 1%, 250 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
euEccn: NLR
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 1206 [Metrisch 3216]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 250mW
Widerstandstyp: Universell
isCanonical: N
Widerstand: 392ohm
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 1%
Temperaturkoeffizient: ± 100ppm/K
Produktlänge: 3.2mm
SVHC: No SVHC (04-Feb-2026)
Produktpalette: CRCW e3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Nennspannung: 200V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.6mm
Description: VISHAY - CRCW1206392RFKEA. - Chipwiderstand, Oberflächenmontage, 392 ohm, ± 1%, 250 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
euEccn: NLR
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 1206 [Metrisch 3216]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 250mW
Widerstandstyp: Universell
isCanonical: N
Widerstand: 392ohm
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 1%
Temperaturkoeffizient: ± 100ppm/K
Produktlänge: 3.2mm
SVHC: No SVHC (04-Feb-2026)
Produktpalette: CRCW e3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Nennspannung: 200V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.6mm
auf Bestellung 3524 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1835+ | 0.13 EUR |
| 2950+ | 0.079 EUR |
| 3390+ | 0.063 EUR |
| BAT54C-E3-08 |
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Hersteller: VISHAY
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
tariffCode: 85411000
Bauform - Diode: SOT-23
Durchlassstoßstrom: 600mA
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 800mV
Sperrverzögerungszeit: 5ns
Durchschnittlicher Durchlassstrom: 200mA
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 30V
Betriebstemperatur, max.: 125°C
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
tariffCode: 85411000
Bauform - Diode: SOT-23
Durchlassstoßstrom: 600mA
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 800mV
Sperrverzögerungszeit: 5ns
Durchschnittlicher Durchlassstrom: 200mA
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 30V
Betriebstemperatur, max.: 125°C
auf Bestellung 89372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 303+ | 0.83 EUR |
| 667+ | 0.35 EUR |
| 863+ | 0.25 EUR |
| 1165+ | 0.18 EUR |
| 7500+ | 0.13 EUR |
| BAT54C-E3-08 |
![]() |
Hersteller: VISHAY
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
tariffCode: 85411000
Bauform - Diode: SOT-23
Durchlassstoßstrom: 600mA
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
isCanonical: N
Durchlassspannung, max.: 800mV
Sperrverzögerungszeit: 5ns
Durchschnittlicher Durchlassstrom: 200mA
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 30V
Betriebstemperatur, max.: 125°C
Description: VISHAY - BAT54C-E3-08 - Kleinsignal-Schottky-Diode, Zweifach, gemeinsame Kathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
tariffCode: 85411000
Bauform - Diode: SOT-23
Durchlassstoßstrom: 600mA
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
isCanonical: N
Durchlassspannung, max.: 800mV
Sperrverzögerungszeit: 5ns
Durchschnittlicher Durchlassstrom: 200mA
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 30V
Betriebstemperatur, max.: 125°C
auf Bestellung 89372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.83 EUR |
| 667+ | 0.35 EUR |
| 863+ | 0.25 EUR |
| 1165+ | 0.18 EUR |
| 7500+ | 0.13 EUR |
| BFC238330304 |
![]() |
Hersteller: VISHAY
Description: VISHAY - BFC238330304 - Leistungs-Folienkondensator, Doppelt metallisiertes PP, Radiales Gehäuse, 2 Pins, 0.3 µF, ± 5%
tariffCode: 85322500
Betriebstemperatur, max.: 105°C
Anschlussabstand: 27.5mm
Ausgang (kvar): -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, min.: -55°C
Produktlänge: 31mm
Produkthöhe: 25mm
Spannung (AC): 350V
Kapazitätstoleranz: ± 5%
hazardous: false
Kapazität: 0.3µF
Typische Anwendungen: Hochstrom, Impuls
Feuchtigkeitsklasse: GRADE II (Testbedingung A)
Produktpalette: MMKP383 Series
usEccn: EAR99
Bauform / Gehäuse des Kondensators: Radiales Gehäuse, 2 Pins
Dielektrikum: Doppelt metallisiertes PP
Kondensatormontage: Durchsteckmontage
rohsCompliant: YES
SVHC: No SVHC (04-Feb-2026)
Kondensatoranschlüsse: PC-Pin
dv/dt: 900V/µs
Produktdurchmesser: -
Qualifikation: -
Spannung (DC): 1kV
Produktbreite: 15mm
Äquivalenter Serienwiderstand (ESR): -
RMS-Strom Irms: -
Rippelstrom: -
Spitzenstrom: -
rohsPhthalatesCompliant: YES
isCanonical: Y
euEccn: NLR
Description: VISHAY - BFC238330304 - Leistungs-Folienkondensator, Doppelt metallisiertes PP, Radiales Gehäuse, 2 Pins, 0.3 µF, ± 5%
tariffCode: 85322500
Betriebstemperatur, max.: 105°C
Anschlussabstand: 27.5mm
Ausgang (kvar): -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, min.: -55°C
Produktlänge: 31mm
Produkthöhe: 25mm
Spannung (AC): 350V
Kapazitätstoleranz: ± 5%
hazardous: false
Kapazität: 0.3µF
Typische Anwendungen: Hochstrom, Impuls
Feuchtigkeitsklasse: GRADE II (Testbedingung A)
Produktpalette: MMKP383 Series
usEccn: EAR99
Bauform / Gehäuse des Kondensators: Radiales Gehäuse, 2 Pins
Dielektrikum: Doppelt metallisiertes PP
Kondensatormontage: Durchsteckmontage
rohsCompliant: YES
SVHC: No SVHC (04-Feb-2026)
Kondensatoranschlüsse: PC-Pin
dv/dt: 900V/µs
Produktdurchmesser: -
Qualifikation: -
Spannung (DC): 1kV
Produktbreite: 15mm
Äquivalenter Serienwiderstand (ESR): -
RMS-Strom Irms: -
Rippelstrom: -
Spitzenstrom: -
rohsPhthalatesCompliant: YES
isCanonical: Y
euEccn: NLR
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 32.76 EUR |
| 9+ | 26.75 EUR |
| 11+ | 21.29 EUR |
| 20+ | 19.6 EUR |
| 40+ | 17.93 EUR |
| 100+ | 16.23 EUR |
| VOM618A-8X001T |
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Hersteller: VISHAY
Description: VISHAY - VOM618A-8X001T - Optokoppler, Transistorausgang, 1 Kanal, SOP, 4 Pin(s), 60 mA, 3.75 kV, 130 %
tariffCode: 85414900
euEccn: NLR
rohsCompliant: YES
Anzahl der Kanäle: 1 Kanal
hazardous: false
rohsPhthalatesCompliant: YES
CTR, min.: 130%
isCanonical: Y
Isolationsspannung: 3.75kV
Durchlassstrom If, max.: 60mA
SVHC: No SVHC (25-Jun-2025)
Kollektor-Emitter-Spannung V(br)ceo: 80V
Bauform - Optokoppler: SOP
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Description: VISHAY - VOM618A-8X001T - Optokoppler, Transistorausgang, 1 Kanal, SOP, 4 Pin(s), 60 mA, 3.75 kV, 130 %
tariffCode: 85414900
euEccn: NLR
rohsCompliant: YES
Anzahl der Kanäle: 1 Kanal
hazardous: false
rohsPhthalatesCompliant: YES
CTR, min.: 130%
isCanonical: Y
Isolationsspannung: 3.75kV
Durchlassstrom If, max.: 60mA
SVHC: No SVHC (25-Jun-2025)
Kollektor-Emitter-Spannung V(br)ceo: 80V
Bauform - Optokoppler: SOP
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 188+ | 1.33 EUR |
| 273+ | 0.86 EUR |
| 301+ | 0.71 EUR |
| 336+ | 0.64 EUR |
| 379+ | 0.57 EUR |
| 500+ | 0.46 EUR |
| PLZ20D-HG3_A/H |
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Hersteller: VISHAY
Description: VISHAY - PLZ20D-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
Description: VISHAY - PLZ20D-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
auf Bestellung 21985 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 337+ | 0.74 EUR |
| 447+ | 0.52 EUR |
| 807+ | 0.26 EUR |
| 1183+ | 0.18 EUR |
| 1330+ | 0.17 EUR |
| 5000+ | 0.11 EUR |
| PLZ20A-HG3_A/H |
![]() |
Hersteller: VISHAY
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
auf Bestellung 22285 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 355+ | 0.7 EUR |
| 538+ | 0.43 EUR |
| 855+ | 0.25 EUR |
| 1265+ | 0.17 EUR |
| 1600+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
| PLZ20A-HG3_A/H |
![]() |
Hersteller: VISHAY
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
Description: VISHAY - PLZ20A-HG3_A/H - Zener-Diode, 20 V, 500 mW, DO-219AC (MicroSMF), 2 Pin(s), 150 °C, Oberflächenmontage
tariffCode: 85411000
Bauform - Diode: DO-219AC (MicroSMF)
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 2Pin(s)
Produktpalette: PLZ Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Zener-Spannung, nom.: 20V
auf Bestellung 22285 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.7 EUR |
| 538+ | 0.43 EUR |
| 855+ | 0.25 EUR |
| 1265+ | 0.17 EUR |
| 1600+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
| BY228GP-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.5kV; 2.5A; Ifsm: 50A; DO201AD; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.5kV
Load current: 2.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 50A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 20µs
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.6V
Max. load current: 10A
Leakage current: 0.2mA
Capacitance: 40pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.5kV; 2.5A; Ifsm: 50A; DO201AD; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.5kV
Load current: 2.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 50A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 20µs
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.6V
Max. load current: 10A
Leakage current: 0.2mA
Capacitance: 40pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF18N50D-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFZ48RPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 291A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 291A
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.52 EUR |
| 24+ | 3.57 EUR |
| 28+ | 3.15 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.11 EUR |
| 250+ | 1.87 EUR |
| IRFP460APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1556 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 7.04 EUR |
| 15+ | 5.93 EUR |
| 17+ | 5.24 EUR |
| 25+ | 4.36 EUR |
| 50+ | 3.81 EUR |
| 100+ | 3.39 EUR |
| 200+ | 3.08 EUR |
| 500+ | 2.81 EUR |
| 750+ | 2.73 EUR |
| IRFP460LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.62 EUR |
| 11+ | 7.91 EUR |
| 13+ | 6.64 EUR |
| 25+ | 5.11 EUR |
| 50+ | 4.55 EUR |
| 100+ | 4.36 EUR |
| IRFP460PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.76 EUR |
| 13+ | 6.64 EUR |
| 15+ | 6.01 EUR |
| 25+ | 5.31 EUR |
| 50+ | 4.91 EUR |
| 100+ | 4.66 EUR |
| 125+ | 4.58 EUR |
| 150+ | 4.52 EUR |
| 500+ | 4.31 EUR |
| IRF510PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.55 EUR |
| 83+ | 1.04 EUR |
| 90+ | 0.95 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.77 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| IRF510SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.42 EUR |
| 75+ | 1.14 EUR |
| 85+ | 1.01 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.89 EUR |
| IRF510STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF520PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 6N137-X007T |
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Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Collector-emitter voltage: 7V
Case: Gull wing 8
Turn-on time: 27ns
Turn-off time: 7ns
Output voltage: 7V
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Collector-emitter voltage: 7V
Case: Gull wing 8
Turn-on time: 27ns
Turn-off time: 7ns
Output voltage: 7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS14-E3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
auf Bestellung 4767 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 305+ | 0.27 EUR |
| 339+ | 0.25 EUR |
| 407+ | 0.21 EUR |
| 526+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| SS14-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
auf Bestellung 5069 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 262+ | 0.32 EUR |
| 380+ | 0.23 EUR |
| 449+ | 0.19 EUR |
| 665+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 1800+ | 0.092 EUR |
| 3600+ | 0.084 EUR |
| SS14-M3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB6S-E3/80 |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.76 EUR |
| 167+ | 0.51 EUR |
| 204+ | 0.42 EUR |
| 224+ | 0.38 EUR |
| 500+ | 0.3 EUR |
| 3000+ | 0.19 EUR |
| CRCW06034K70FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Manufacturer series: CRCW0603
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Manufacturer series: CRCW0603
auf Bestellung 665700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3732+ | 0.023 EUR |
| 15016+ | 0.0057 EUR |
| 23475+ | 0.0036 EUR |
| 27323+ | 0.0031 EUR |
| 31056+ | 0.0027 EUR |
| 50000+ | 0.0024 EUR |
| 75000+ | 0.0023 EUR |
| 1.5KE100CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 211+ | 0.4 EUR |
| 230+ | 0.37 EUR |
| SS24HE3_A/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Manufacturer standard package: 750pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Manufacturer standard package: 750pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HRC00FE1002WTNL |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; ±20%; 10000h; -25÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...105°C
Dimensions: 12.5x20mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; ±20%; 10000h; -25÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...105°C
Dimensions: 12.5x20mm
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| 98+ | 0.88 EUR |
| 135+ | 0.63 EUR |
| 161+ | 0.52 EUR |
| 300+ | 0.49 EUR |
| MAL204217109E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Leads: axial
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.05 EUR |
| 17+ | 5.15 EUR |
| 19+ | 4.62 EUR |
| 21+ | 4.11 EUR |
| 60+ | 3.44 EUR |
| 100+ | 3.2 EUR |
| MAL204272109E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Tolerance: ±20%
Diameter: 12.5mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø12.5x30mm
Type of capacitor: electrolytic
Capacitance: 10µF
Height: 30mm
Operating voltage: 450V DC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Tolerance: ±20%
Diameter: 12.5mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø12.5x30mm
Type of capacitor: electrolytic
Capacitance: 10µF
Height: 30mm
Operating voltage: 450V DC
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.6 EUR |
| 16+ | 5.45 EUR |
| 17+ | 5.18 EUR |
| 25+ | 4.94 EUR |
| 50+ | 4.78 EUR |
| 100+ | 4.66 EUR |
| 200+ | 4.55 EUR |
| SISS54DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Case: PowerPAK® 1212-8
Mounting: SMD
Pulsed drain current: 300A
Power dissipation: 42W
Gate charge: 72nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 148.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
Kind of package: reel; tape
On-state resistance: 1.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Case: PowerPAK® 1212-8
Mounting: SMD
Pulsed drain current: 300A
Power dissipation: 42W
Gate charge: 72nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 148.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
Kind of package: reel; tape
On-state resistance: 1.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW120610K0FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
auf Bestellung 18857 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 794+ | 0.11 EUR |
| 1765+ | 0.049 EUR |
| 2916+ | 0.03 EUR |
| 4119+ | 0.02 EUR |
| 4785+ | 0.018 EUR |
| 6822+ | 0.012 EUR |
| 10000+ | 0.011 EUR |
| 15000+ | 0.0098 EUR |
| CRCW120610K0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 191300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6926+ | 0.012 EUR |
| 8362+ | 0.01 EUR |
| 9542+ | 0.0089 EUR |
| 11738+ | 0.0073 EUR |
| 14368+ | 0.006 EUR |
| 16892+ | 0.005 EUR |
| 17606+ | 0.0049 EUR |
| 18657+ | 0.0045 EUR |
| 50000+ | 0.0044 EUR |
| CRCW120610K0JNEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...125°C
auf Bestellung 7749 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 658+ | 0.13 EUR |
| 1378+ | 0.062 EUR |
| 1799+ | 0.048 EUR |
| 2193+ | 0.039 EUR |
| 2674+ | 0.032 EUR |
| 4202+ | 0.02 EUR |
| 5051+ | 0.017 EUR |
| 5495+ | 0.015 EUR |
| CRCW120610K0JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2400+ | 0.036 EUR |
| 7300+ | 0.012 EUR |
| 12500+ | 0.0068 EUR |
| 1N4001-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
auf Bestellung 1939 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.39 EUR |
| 642+ | 0.13 EUR |
| 760+ | 0.11 EUR |
| BAT54WS-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Max. load current: 0.3A
auf Bestellung 2178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 407+ | 0.21 EUR |
| 649+ | 0.13 EUR |
| 854+ | 0.1 EUR |
| 1000+ | 0.09 EUR |
| 1N4004-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
auf Bestellung 10528 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 432+ | 0.2 EUR |
| 555+ | 0.15 EUR |
| 689+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.098 EUR |
| 5500+ | 0.082 EUR |
| 1N4004-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 25616 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 400+ | 0.21 EUR |
| 587+ | 0.14 EUR |
| 765+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.083 EUR |
| 6000+ | 0.075 EUR |
| 9000+ | 0.07 EUR |
| 24000+ | 0.06 EUR |
| 1N4004GP-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Manufacturer standard package: 5500pcs.
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Manufacturer standard package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 228+ | 0.37 EUR |
| 596+ | 0.14 EUR |
| IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT54A-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| BAT54A-HE3-08 |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Application: automotive industry
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 550+ | 0.15 EUR |
| BAT54S-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54S-HE3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 2µA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.66 EUR |
| IRFP240PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T63XB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Mounting: THT
Manufacturer series: T63XB
Type of potentiometer: mounting
Number of electrical turns: 13 ±2
Track material: cermet
Characteristics: linear
Potentiometer standard - inch: 1/4"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Torque: 1Ncm
Operating voltage: 250V
IP rating: IP67
Terminal pitch: 2.5x2.5mm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Mounting: THT
Manufacturer series: T63XB
Type of potentiometer: mounting
Number of electrical turns: 13 ±2
Track material: cermet
Characteristics: linear
Potentiometer standard - inch: 1/4"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Torque: 1Ncm
Operating voltage: 250V
IP rating: IP67
Terminal pitch: 2.5x2.5mm
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| T63YB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Mounting: THT
Manufacturer series: T63YB
Type of potentiometer: mounting
Number of electrical turns: 13 ±2
Track material: cermet
Characteristics: linear
Potentiometer standard - inch: 1/4"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Torque: 1Ncm
Operating voltage: 250V
IP rating: IP67
Terminal pitch: 2.5x2.5mm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Mounting: THT
Manufacturer series: T63YB
Type of potentiometer: mounting
Number of electrical turns: 13 ±2
Track material: cermet
Characteristics: linear
Potentiometer standard - inch: 1/4"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Torque: 1Ncm
Operating voltage: 250V
IP rating: IP67
Terminal pitch: 2.5x2.5mm
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.62 EUR |
| 25+ | 3.53 EUR |
| 27+ | 3.25 EUR |
| 50+ | 3.06 EUR |
| 100+ | 2.88 EUR |
| 250+ | 2.74 EUR |
| T93XB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Mounting: THT
Manufacturer series: T93XB
Type of potentiometer: mounting
Number of electrical turns: 19 ±2
Track material: cermet
Engineering PN: 64Z; 67Z; 3296Z
Characteristics: linear
Potentiometer standard - inch: 3/8"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Torque: 1.5Ncm
Operating voltage: 250V
IP rating: IP67
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Mounting: THT
Manufacturer series: T93XB
Type of potentiometer: mounting
Number of electrical turns: 19 ±2
Track material: cermet
Engineering PN: 64Z; 67Z; 3296Z
Characteristics: linear
Potentiometer standard - inch: 3/8"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Torque: 1.5Ncm
Operating voltage: 250V
IP rating: IP67
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 2.01 EUR |
| 57+ | 1.5 EUR |
| 61+ | 1.39 EUR |
| 100+ | 1.34 EUR |
| T93YB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Mounting: THT
Manufacturer series: T93YB
Type of potentiometer: mounting
Number of electrical turns: 19 ±2
Track material: cermet
Engineering PN: 64Y; 67Y; 3296Y
Characteristics: linear
Potentiometer standard - inch: 3/8"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Torque: 1.5Ncm
Operating voltage: 250V
IP rating: IP67
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Mounting: THT
Manufacturer series: T93YB
Type of potentiometer: mounting
Number of electrical turns: 19 ±2
Track material: cermet
Engineering PN: 64Y; 67Y; 3296Y
Characteristics: linear
Potentiometer standard - inch: 3/8"
Kind of potentiometer: multiturn
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Torque: 1.5Ncm
Operating voltage: 250V
IP rating: IP67
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.18 EUR |
| 46+ | 1.87 EUR |
| 51+ | 1.69 EUR |
| 59+ | 1.45 EUR |
| 61+ | 1.39 EUR |
| 65+ | 1.31 EUR |
| 100+ | 1.21 EUR |
| VS-36MT60 |
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Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Electrical mounting: THT
Leads: connectors FASTON
Max. off-state voltage: 0.6kV
Load current: 35A
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Case: D-63
Type of bridge rectifier: three-phase
Max. forward impulse current: 475A
Max. forward voltage: 1.19V
Version: square
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Electrical mounting: THT
Leads: connectors FASTON
Max. off-state voltage: 0.6kV
Load current: 35A
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Case: D-63
Type of bridge rectifier: three-phase
Max. forward impulse current: 475A
Max. forward voltage: 1.19V
Version: square
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.36 EUR |
| 5+ | 19.52 EUR |
| SIHB12N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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