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AC05000003900JAC00 AC05000003900JAC00 VISHAY 74.pdf Category: THT Resistors
Description: Resistor: wire-wound; 390Ω; THT; 5W; ±5%; Ø7.5x18mm; -55÷200°C
Type of resistor: wire-wound
Resistance: 390Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Operating temperature: -55...200°C
Conform to the norm: AEC-Q200
Height: 18mm
Quantity in set/package: 500pcs.
Diameter: 7.5mm
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AC05000002208JAC00 AC05000002208JAC00 VISHAY VISHAY_ac_series.pdf Category: Power resistors
Description: Resistor: wire-wound; 2.2Ω; THT; 5W; ±5%; Ø0.8x25mm; Ø7.5x18mm
Type of resistor: wire-wound
Resistance: 2.2Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Operating temperature: -50...250°C
Length: 18mm
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads dimensions: Ø0.8x25mm
Diameter: 7.5mm
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DG333ADW-E3 DG333ADW-E3 VISHAY DG333ADW-E3.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 4; SO20; 5÷36V,7÷22V; tube
Mounting: SMD
Type of integrated circuit: analog switch
Case: SO20
Output configuration: SPDT
Kind of package: tube
Number of channels: 4
Supply voltage: 5...36V; 7...22V
Resistance: 45Ω
auf Bestellung 95 Stücke:
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15+5.89 EUR
19+4.59 EUR
25+4.36 EUR
35+4.27 EUR
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DG333ADQ-T1-E3 VISHAY dg333a.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 4; TSSOP20; 4÷22V
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: analog switch
Case: TSSOP20
Output configuration: SPDT
Number of channels: 4
Supply voltage: 4...22V
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DG202BDJ-E3 DG202BDJ-E3 VISHAY dg201b_2b.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Number of channels: 4
Supply voltage: 7...22V; 13...36V
Mounting: THT
Output configuration: SPST-NO
Kind of package: tube
Resistance: 50Ω
Type of integrated circuit: analog switch
Case: DIP16
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SQD40131EL_GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 62W; DPAK,TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 62W
Case: DPAK; TO252AA
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 76nC
Kind of channel: enhancement
Application: automotive industry
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CRCW0805620KJNTABC CRCW0805620KJNTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 620kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 3500 Stücke:
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2700+0.032 EUR
3500+0.024 EUR
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CRCW120662K0FKEA CRCW120662K0FKEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; 62kΩ; SMD; 1206; 250mW; ±1%; 3.2x1.6mm
Type of resistor: thick film
Resistance: 62kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 3.2x1.6mm
Max. operating voltage: 200V
auf Bestellung 34500 Stücke:
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15000+0.0077 EUR
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VS-40TPS16-M3 VS-40TPS16-M3 VISHAY vs-40tps16-m3.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AC-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AC-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
auf Bestellung 195 Stücke:
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9+9.92 EUR
10+8.64 EUR
11+8.07 EUR
25+7.37 EUR
50+6.88 EUR
100+6.44 EUR
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VS-40TPS16LHM3 VISHAY VS-40TPS16LHM3.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Application: automotive industry
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VS-40TPS16L-M3 VISHAY VS-40TPS16L-M3.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
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TSOP4856 TSOP4856 VISHAY TSOP4856.pdf description Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 45°; 4.5÷5.5V
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 4.5...5.5V
Connector variant: straight
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IRF710PBF IRF710PBF VISHAY IRF710PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
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65+1.31 EUR
77+1.11 EUR
91+0.94 EUR
103+0.83 EUR
250+0.73 EUR
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IRF710STRLPBF IRF710STRLPBF VISHAY sihf710s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 626 Stücke:
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49+1.77 EUR
76+1.13 EUR
100+0.89 EUR
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IRF710SPBF IRF710SPBF VISHAY irf710s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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38+2.28 EUR
58+1.49 EUR
70+1.21 EUR
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MAL213837221E3 MAL213837221E3 VISHAY 138aml.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 220uF; 40VDC; Ø10x25mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 220µF
Operating voltage: 40V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 2000h
Operating temperature: -40...105°C
Height: 25mm
Diameter: 10mm
auf Bestellung 72 Stücke:
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18+4.9 EUR
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D2TO020CR6800FRE3 VISHAY d2to20.pdf Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 680mΩ; 25W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Case: TO263
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 0.68Ω
Power: 25W
Conform to the norm: AEC-Q200
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MAL211890513E3 MAL211890513E3 VISHAY 118AHT.PDF Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 63VDC; Ø10x25mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Operating temperature: -40...125°C
Height: 25mm
Diameter: 10mm
Kind of capacitor: low ESR
Service life: 4000h
Leads: axial
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IRLL110TRPBF IRLL110TRPBF VISHAY IRLL110PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Case: SOT223
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 760mΩ
Power dissipation: 3.1W
Gate charge: 6.1nC
Polarisation: unipolar
Drain current: 0.93A
Kind of channel: enhancement
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IRFL110TRPBF IRFL110TRPBF VISHAY IRFL110PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Mounting: SMD
Polarisation: unipolar
Case: SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 0.96A
Gate charge: 8.3nC
Power dissipation: 3.1W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
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SIHLL110TR-GE3 SIHLL110TR-GE3 VISHAY sihll110.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE12A-E3/54 1.5KE12A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.87 EUR
122+0.7 EUR
166+0.51 EUR
250+0.44 EUR
500+0.39 EUR
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1.5KE120A-E3/54 1.5KE120A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 501 Stücke:
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103+0.83 EUR
124+0.69 EUR
174+0.49 EUR
250+0.42 EUR
500+0.37 EUR
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WSC452768R00JEA WSC452768R00JEA VISHAY 112.pdf Category: SMD resistors
Description: Resistor: wire-wound; 68Ω; SMD; 4527; 2W; ±5%; 11.56x6.98x4.24mm
Type of resistor: wire-wound
Resistance: 68Ω
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±5%
Body dimensions: 11.56x6.98x4.24mm
Operating temperature: -65...275°C
Temperature coefficient: 20ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1200pcs.
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WSC45271K000FEA VISHAY wscwsn.pdf Category: SMD resistors
Description: WSC45271K000FEA
auf Bestellung 2400 Stücke:
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1200+1.99 EUR
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SI7315DN-T1-GE3 VISHAY si7315dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -10A
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -10A
Drain current: -8.9A
Gate charge: 30nC
Power dissipation: 33W
On-state resistance: 315mΩ
Gate-source voltage: ±30V
Kind of package: reel; tape
Kind of channel: enhancement
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SI4455DY-T1-E3 VISHAY si4455dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -15A
Drain current: -2.3A
Gate charge: 23.2nC
Power dissipation: 3.8W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
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SI4455DY-T1-GE3 SI4455DY-T1-GE3 VISHAY SI4455DY.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -15A
Drain current: -2.3A
Gate charge: 23.2nC
Power dissipation: 3.8W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
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SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 VISHAY sq2361aees.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -11A
Drain current: -2.8A
Gate charge: 15nC
Power dissipation: 0.67W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFI9Z24GPBF IRFI9Z24GPBF VISHAY 91171.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
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SMCJ33CA-E3/57T SMCJ33CA-E3/57T VISHAY smcjA-CA_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1915 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
217+0.39 EUR
247+0.35 EUR
500+0.27 EUR
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SMCJ33CA-E3/9AT VISHAY smcj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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MCT06030C1210DP500 MCT06030C1210DP500 VISHAY mcx0x0xpre.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 121Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
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IRLU110PBF IRLU110PBF VISHAY IRLR110.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.54Ω
Pulsed drain current: 17A
Gate charge: 6.1nC
Gate-source voltage: ±10V
Kind of package: tube
auf Bestellung 1409 Stücke:
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59+1.45 EUR
72+1.19 EUR
77+1.11 EUR
82+1.05 EUR
87+0.99 EUR
91+0.94 EUR
150+0.87 EUR
1050+0.76 EUR
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IRLU014PBF IRLU014PBF VISHAY IRLU014.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1770 Stücke:
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86+1 EUR
94+0.92 EUR
111+0.77 EUR
118+0.73 EUR
150+0.68 EUR
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M32159B06MS2 VISHAY 274.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 20mΩ; 150mW; 2.03x1.27x0.51mm; 500pcs.
Operating temperature: -65...150°C
Body dimensions: 2.03x1.27x0.51mm
Resistance: 20mΩ
Power: 0.15W
Quantity in set/package: 500pcs.
Type of resistor: thick film
Mounting: SMD
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MCT06030F7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MCT06030F7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT06030F7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT0603MF7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT0603MF7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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MCT0603MF7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20000 Stücke
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SI8424CDB-T1-E1 VISHAY si8424cdb.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Power dissipation: 1.8W
Gate charge: 40nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: reel; tape
On-state resistance: 20mΩ
Pulsed drain current: 25A
Produkt ist nicht verfügbar
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GBPC3506W-E4/51 GBPC3506W-E4/51 VISHAY gbpc12.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
auf Bestellung 158 Stücke:
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12+7.33 EUR
20+4.39 EUR
50+3.25 EUR
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GBPC3508-E4/51 GBPC3508-E4/51 VISHAY GBPC3506-E4-51.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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13+6.85 EUR
17+5.06 EUR
50+3.64 EUR
100+3.52 EUR
200+3.4 EUR
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GBPC3506-E4/51 GBPC3506-E4/51 VISHAY GBPC3506-E4-51.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
auf Bestellung 112 Stücke:
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13+6.62 EUR
19+4.52 EUR
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1N5242B-TR VISHAY 1n5221.pdf Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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1N5246B-TR VISHAY 1n5221.pdf Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
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BAS386-TR BAS386-TR VISHAY BAS386-TR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Case: MicroMELF
Capacitance: 8pF
Type of diode: Schottky switching
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Load current: 0.2A
Max. load current: 0.5A
Kind of package: 7 inch reel
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200+0.43 EUR
300+0.29 EUR
518+0.17 EUR
723+0.12 EUR
1000+0.1 EUR
2500+0.087 EUR
5000+0.079 EUR
7500+0.077 EUR
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BAS385-TR BAS385-TR VISHAY bas385.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2.3µA
Case: MicroMELF
Capacitance: 10pF
Type of diode: Schottky switching
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: 7 inch reel
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186+0.46 EUR
338+0.25 EUR
560+0.15 EUR
673+0.13 EUR
925+0.092 EUR
1013+0.084 EUR
1300+0.081 EUR
2500+0.077 EUR
5000+0.074 EUR
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BAS383-TR BAS383-TR VISHAY bas381.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Capacitance: 1.6pF
Type of diode: Schottky switching
Max. forward impulse current: 0.5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Load current: 30mA
Max. load current: 0.15A
Kind of package: 7 inch reel
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710+0.12 EUR
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VS-42CTQ030S-M3 VS-42CTQ030S-M3 VISHAY vs-42ctq030x.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Max. load current: 40A
Max. forward impulse current: 360A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 1576 Stücke:
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44+1.94 EUR
50+1.74 EUR
52+1.67 EUR
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SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 VISHAY si2308cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 VISHAY SI2307CDS-T1-GE3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.2nC
auf Bestellung 7897 Stücke:
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129+0.67 EUR
172+0.5 EUR
232+0.37 EUR
257+0.33 EUR
500+0.27 EUR
1000+0.25 EUR
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 129 Stücke
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SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
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85+1 EUR
158+0.54 EUR
205+0.42 EUR
227+0.38 EUR
500+0.3 EUR
1000+0.27 EUR
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SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 VISHAY SI2304DDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI2306BDS-T1-E3 SI2306BDS-T1-E3 VISHAY SI2306BDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 4.5nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 65mΩ
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80+1.07 EUR
108+0.8 EUR
152+0.56 EUR
175+0.49 EUR
500+0.43 EUR
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SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 VISHAY si2306bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SI2303CDS-T1-BE3 SI2303CDS-T1-BE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SI2303CDS-T1-E3 SI2303CDS-T1-E3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AC05000003900JAC00 74.pdf
AC05000003900JAC00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: wire-wound; 390Ω; THT; 5W; ±5%; Ø7.5x18mm; -55÷200°C
Type of resistor: wire-wound
Resistance: 390Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Operating temperature: -55...200°C
Conform to the norm: AEC-Q200
Height: 18mm
Quantity in set/package: 500pcs.
Diameter: 7.5mm
Produkt ist nicht verfügbar
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AC05000002208JAC00 VISHAY_ac_series.pdf
AC05000002208JAC00
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; 2.2Ω; THT; 5W; ±5%; Ø0.8x25mm; Ø7.5x18mm
Type of resistor: wire-wound
Resistance: 2.2Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Operating temperature: -50...250°C
Length: 18mm
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads dimensions: Ø0.8x25mm
Diameter: 7.5mm
Produkt ist nicht verfügbar
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DG333ADW-E3 DG333ADW-E3.pdf
DG333ADW-E3
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 4; SO20; 5÷36V,7÷22V; tube
Mounting: SMD
Type of integrated circuit: analog switch
Case: SO20
Output configuration: SPDT
Kind of package: tube
Number of channels: 4
Supply voltage: 5...36V; 7...22V
Resistance: 45Ω
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.89 EUR
19+4.59 EUR
25+4.36 EUR
35+4.27 EUR
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DG333ADQ-T1-E3 dg333a.pdf
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 4; TSSOP20; 4÷22V
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: analog switch
Case: TSSOP20
Output configuration: SPDT
Number of channels: 4
Supply voltage: 4...22V
Produkt ist nicht verfügbar
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DG202BDJ-E3 dg201b_2b.pdf
DG202BDJ-E3
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Number of channels: 4
Supply voltage: 7...22V; 13...36V
Mounting: THT
Output configuration: SPST-NO
Kind of package: tube
Resistance: 50Ω
Type of integrated circuit: analog switch
Case: DIP16
Produkt ist nicht verfügbar
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SQD40131EL_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 62W; DPAK,TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 62W
Case: DPAK; TO252AA
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 76nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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CRCW0805620KJNTABC Data Sheet CRCW_BCe3.pdf
CRCW0805620KJNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 620kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 3500 Stücke:
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2700+0.032 EUR
3500+0.024 EUR
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CRCW120662K0FKEA dcrcwe3.pdf
CRCW120662K0FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 62kΩ; SMD; 1206; 250mW; ±1%; 3.2x1.6mm
Type of resistor: thick film
Resistance: 62kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 3.2x1.6mm
Max. operating voltage: 200V
auf Bestellung 34500 Stücke:
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AnzahlPrivatkunde
15000+0.0077 EUR
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VS-40TPS16-M3 vs-40tps16-m3.pdf
VS-40TPS16-M3
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AC-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AC-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
auf Bestellung 195 Stücke:
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9+9.92 EUR
10+8.64 EUR
11+8.07 EUR
25+7.37 EUR
50+6.88 EUR
100+6.44 EUR
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VS-40TPS16LHM3 VS-40TPS16LHM3.pdf
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Application: automotive industry
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VS-40TPS16L-M3 VS-40TPS16L-M3.pdf
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Produkt ist nicht verfügbar
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TSOP4856 description TSOP4856.pdf
TSOP4856
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 45°; 4.5÷5.5V
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 4.5...5.5V
Connector variant: straight
Produkt ist nicht verfügbar
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IRF710PBF IRF710PBF.pdf
IRF710PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
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AnzahlPrivatkunde
65+1.31 EUR
77+1.11 EUR
91+0.94 EUR
103+0.83 EUR
250+0.73 EUR
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IRF710STRLPBF sihf710s.pdf
IRF710STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 626 Stücke:
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49+1.77 EUR
76+1.13 EUR
100+0.89 EUR
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IRF710SPBF irf710s.pdf
IRF710SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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38+2.28 EUR
58+1.49 EUR
70+1.21 EUR
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MAL213837221E3 138aml.pdf
MAL213837221E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 220uF; 40VDC; Ø10x25mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 220µF
Operating voltage: 40V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 2000h
Operating temperature: -40...105°C
Height: 25mm
Diameter: 10mm
auf Bestellung 72 Stücke:
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18+4.9 EUR
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D2TO020CR6800FRE3 d2to20.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 680mΩ; 25W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Case: TO263
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 0.68Ω
Power: 25W
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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MAL211890513E3 118AHT.PDF
MAL211890513E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 63VDC; Ø10x25mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Operating temperature: -40...125°C
Height: 25mm
Diameter: 10mm
Kind of capacitor: low ESR
Service life: 4000h
Leads: axial
Produkt ist nicht verfügbar
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IRLL110TRPBF IRLL110PBF.pdf
IRLL110TRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Case: SOT223
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 760mΩ
Power dissipation: 3.1W
Gate charge: 6.1nC
Polarisation: unipolar
Drain current: 0.93A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFL110TRPBF IRFL110PBF.pdf
IRFL110TRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Mounting: SMD
Polarisation: unipolar
Case: SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 0.96A
Gate charge: 8.3nC
Power dissipation: 3.1W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SIHLL110TR-GE3 sihll110.pdf
SIHLL110TR-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE12A-E3/54 15ke_Ser.pdf
1.5KE12A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
99+0.87 EUR
122+0.7 EUR
166+0.51 EUR
250+0.44 EUR
500+0.39 EUR
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1.5KE120A-E3/54 15ke_Ser.pdf
1.5KE120A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 501 Stücke:
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AnzahlPrivatkunde
103+0.83 EUR
124+0.69 EUR
174+0.49 EUR
250+0.42 EUR
500+0.37 EUR
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WSC452768R00JEA 112.pdf
WSC452768R00JEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: wire-wound; 68Ω; SMD; 4527; 2W; ±5%; 11.56x6.98x4.24mm
Type of resistor: wire-wound
Resistance: 68Ω
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±5%
Body dimensions: 11.56x6.98x4.24mm
Operating temperature: -65...275°C
Temperature coefficient: 20ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1200pcs.
Produkt ist nicht verfügbar
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WSC45271K000FEA wscwsn.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: WSC45271K000FEA
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1200+1.99 EUR
Mindestbestellmenge: 1200 Stücke
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SI7315DN-T1-GE3 si7315dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -10A
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -10A
Drain current: -8.9A
Gate charge: 30nC
Power dissipation: 33W
On-state resistance: 315mΩ
Gate-source voltage: ±30V
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI4455DY-T1-E3 si4455dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -15A
Drain current: -2.3A
Gate charge: 23.2nC
Power dissipation: 3.8W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI4455DY-T1-GE3 SI4455DY.pdf
SI4455DY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -15A
Drain current: -2.3A
Gate charge: 23.2nC
Power dissipation: 3.8W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQ2361AEES-T1_GE3 sq2361aees.pdf
SQ2361AEES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -11A
Drain current: -2.8A
Gate charge: 15nC
Power dissipation: 0.67W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFI9Z24GPBF 91171.pdf
IRFI9Z24GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Produkt ist nicht verfügbar
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SMCJ33CA-E3/57T smcjA-CA_ser.pdf
SMCJ33CA-E3/57T
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1915 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
217+0.39 EUR
247+0.35 EUR
500+0.27 EUR
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SMCJ33CA-E3/9AT smcj.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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MCT06030C1210DP500 mcx0x0xpre.pdf
MCT06030C1210DP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 121Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Produkt ist nicht verfügbar
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IRLU110PBF IRLR110.pdf
IRLU110PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.54Ω
Pulsed drain current: 17A
Gate charge: 6.1nC
Gate-source voltage: ±10V
Kind of package: tube
auf Bestellung 1409 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.45 EUR
72+1.19 EUR
77+1.11 EUR
82+1.05 EUR
87+0.99 EUR
91+0.94 EUR
150+0.87 EUR
1050+0.76 EUR
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IRLU014PBF IRLU014.pdf
IRLU014PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
73+1.18 EUR
86+1 EUR
94+0.92 EUR
111+0.77 EUR
118+0.73 EUR
150+0.68 EUR
Mindestbestellmenge: 73 Stücke
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M32159B06MS2 274.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 20mΩ; 150mW; 2.03x1.27x0.51mm; 500pcs.
Operating temperature: -65...150°C
Body dimensions: 2.03x1.27x0.51mm
Resistance: 20mΩ
Power: 0.15W
Quantity in set/package: 500pcs.
Type of resistor: thick film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT06030F7159BP100
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT06030F7159BP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MCT06030F7159BPW00
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT0603MF7159BP100
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT0603MF7159BP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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MCT0603MF7159BPW00
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
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SI8424CDB-T1-E1 si8424cdb.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Power dissipation: 1.8W
Gate charge: 40nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: reel; tape
On-state resistance: 20mΩ
Pulsed drain current: 25A
Produkt ist nicht verfügbar
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GBPC3506W-E4/51 gbpc12.pdf
GBPC3506W-E4/51
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
auf Bestellung 158 Stücke:
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12+7.33 EUR
20+4.39 EUR
50+3.25 EUR
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GBPC3508-E4/51 GBPC3506-E4-51.pdf
GBPC3508-E4/51
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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13+6.85 EUR
17+5.06 EUR
50+3.64 EUR
100+3.52 EUR
200+3.4 EUR
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GBPC3506-E4/51 GBPC3506-E4-51.pdf
GBPC3506-E4/51
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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13+6.62 EUR
19+4.52 EUR
26+3.39 EUR
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1N5242B-TR 1n5221.pdf
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20000 Stücke:
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20000+0.046 EUR
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1N5246B-TR 1n5221.pdf
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
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20000+0.046 EUR
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BAS386-TR BAS386-TR.pdf
BAS386-TR
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Case: MicroMELF
Capacitance: 8pF
Type of diode: Schottky switching
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Load current: 0.2A
Max. load current: 0.5A
Kind of package: 7 inch reel
auf Bestellung 19204 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
300+0.29 EUR
518+0.17 EUR
723+0.12 EUR
1000+0.1 EUR
2500+0.087 EUR
5000+0.079 EUR
7500+0.077 EUR
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BAS385-TR bas385.pdf
BAS385-TR
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2.3µA
Case: MicroMELF
Capacitance: 10pF
Type of diode: Schottky switching
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: 7 inch reel
auf Bestellung 9408 Stücke:
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AnzahlPrivatkunde
186+0.46 EUR
338+0.25 EUR
560+0.15 EUR
673+0.13 EUR
925+0.092 EUR
1013+0.084 EUR
1300+0.081 EUR
2500+0.077 EUR
5000+0.074 EUR
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BAS383-TR bas381.pdf
BAS383-TR
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Capacitance: 1.6pF
Type of diode: Schottky switching
Max. forward impulse current: 0.5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Load current: 30mA
Max. load current: 0.15A
Kind of package: 7 inch reel
auf Bestellung 710 Stücke:
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AnzahlPrivatkunde
710+0.12 EUR
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VS-42CTQ030S-M3 vs-42ctq030x.pdf
VS-42CTQ030S-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Max. load current: 40A
Max. forward impulse current: 360A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 1576 Stücke:
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44+1.94 EUR
50+1.74 EUR
52+1.67 EUR
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SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2307CDS-T1-GE3 SI2307CDS-T1-GE3.pdf
SI2307CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.2nC
auf Bestellung 7897 Stücke:
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129+0.67 EUR
172+0.5 EUR
232+0.37 EUR
257+0.33 EUR
500+0.27 EUR
1000+0.25 EUR
3000+0.23 EUR
6000+0.21 EUR
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SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2925 Stücke:
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85+1 EUR
158+0.54 EUR
205+0.42 EUR
227+0.38 EUR
500+0.3 EUR
1000+0.27 EUR
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SI2304DDS-T1-GE3 SI2304DDS.pdf
SI2304DDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI2306BDS-T1-E3 SI2306BDS.pdf
SI2306BDS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 4.5nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 65mΩ
auf Bestellung 1503 Stücke:
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80+1.07 EUR
108+0.8 EUR
152+0.56 EUR
175+0.49 EUR
500+0.43 EUR
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SI2306BDS-T1-GE3 si2306bd.pdf
SI2306BDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SI2303CDS-T1-BE3 si2303cd.pdf
SI2303CDS-T1-BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SI2303CDS-T1-E3 si2303cd.pdf
SI2303CDS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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