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SIHFL9110TR-GE3 SIHFL9110TR-GE3 VISHAY sihfl911.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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CMB02070X1821FB700 CMB02070X1821FB700 VISHAY Category: SMD resistors
Description: Resistor: carbon film; 1.82kΩ; SMD; MELF; 0207; 1W; ±1%; 500V
Type of resistor: carbon film
Resistance: 1.82kΩ
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
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TNPW0402100KBXEP TNPW0402100KBXEP VISHAY tnpw_e3.pdf Category: SMD resistors
Description: Resistor: thin film; 100kΩ; 0402; 130mW; ±0.1%; ESD; 15ppm/°C
Type of resistor: thin film
Resistance: 100kΩ
Case - inch: 0402
Case - mm: 1005
Power: 130mW
Tolerance: ±0.1%
Version: ESD
Temperature coefficient: 15ppm/°C
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1000+0.43 EUR
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BAW56-G3-18 BAW56-G3-18 VISHAY 112_PdfFile_828878.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 250mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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BAW56-HE3_A-08 BAW56-HE3_A-08 VISHAY baw56.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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BAW56-HE3_A-18 BAW56-HE3_A-18 VISHAY baw56.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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SIHB150N60E-GE3 SIHB150N60E-GE3 VISHAY sihb150n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 43A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 43A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
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SIHP150N60E-GE3 SIHP150N60E-GE3 VISHAY sihp150n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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MAL211990502E3 VISHAY 119ahtdin.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 10VDC; 10x25mm; 4000h
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 470µF
Operating voltage: 10V DC
Body dimensions: 10x25mm
Tolerance: -10...50%
Service life: 4000h
Impedance: 0.49Ω
Operating temperature: -55...125°C
ESR value: 610mΩ
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500+2.02 EUR
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SM6T200CA-E3/52 SM6T200CA-E3/52 VISHAY sm6t.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 190V; 2.2A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
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CRCW06031R00JNTABC CRCW06031R00JNTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 1Ω; SMD; 0603; 0.1W; ±5%; CRCW0603; 75V
Type of resistor: thick film
Resistance:
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Manufacturer series: CRCW0603
Operating voltage: 75V
Operating temperature: -55...155°C
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P6KE6.8A-E3/73 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel
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P6KE6.8AHE3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel
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MCL103A-TR MCL103A-TR VISHAY MCL103A-TR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 15A
Manufacturer standard package: 2500pcs.
Features of semiconductor devices: small signal
Kind of package: 7 inch reel
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200+0.43 EUR
280+0.31 EUR
472+0.18 EUR
660+0.13 EUR
1000+0.11 EUR
2500+0.098 EUR
5000+0.089 EUR
7500+0.084 EUR
12500+0.083 EUR
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MCL103C-TR VISHAY mcl103a.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 20V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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MCL103A-TR3 VISHAY mcl103a.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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MCL103B-TR3 VISHAY mcl103a.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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BZT52C24-E3-08 BZT52C24-E3-08 VISHAY bzt52_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
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BZT52C24-E3-18 BZT52C24-E3-18 VISHAY bzt52_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
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BZT52C24-G3-08 BZT52C24-G3-08 VISHAY bzt52-g_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
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BZT52C24-G3-18 BZT52C24-G3-18 VISHAY bzt52-g_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
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MCL101A-TR MCL101A-TR VISHAY mcl101a.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1V
Max. off-state voltage: 60V
Load current: 30mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Type of diode: Schottky switching
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Lieferzeit 14-21 Tag (e)
417+0.2 EUR
736+0.12 EUR
787+0.11 EUR
823+0.1 EUR
852+0.1 EUR
1000+0.093 EUR
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MAL205847103E3 VISHAY 058059pll-si.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 10mF; 40VDC; Ø30x50mm; ±20%
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 10mF
Height: 50mm
Operating voltage: 40V DC
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MMU01020C9102FB300 MMU01020C9102FB300 VISHAY 33.pdf Category: SMD resistors
Description: Resistor: metal film; 91kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 91kΩ
Mounting: SMD
Power: 0.3W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: Ø1.1x2.2mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 3000pcs.
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UF4002-E3/54 UF4002-E3/54 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4003-E3/73 UF4003-E3/73 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4004-E3/73 UF4004-E3/73 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4004-M3/54 UF4004-M3/54 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4006-E3/73 UF4006-E3/73 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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UF4005-E3/73 UF4005-E3/73 VISHAY uf4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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SS16-M3/5AT SS16-M3/5AT VISHAY SS12-SS16.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
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SS16HM3_B/I SS16HM3_B/I VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
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ES2D-M3/52T ES2D-M3/52T VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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ES2D-M3/5BT ES2D-M3/5BT VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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ES2DHM3_A/I ES2DHM3_A/I VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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1.5KE22A-E3/54 1.5KE22A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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RCA0805620RFKEA RCA0805620RFKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 620Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Tolerance: ±1%
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
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CRCW0805620KFKEA CRCW0805620KFKEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620kΩ
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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CRCW0805620RFHEAP CRCW0805620RFHEAP VISHAY 56.pdf Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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CRCW0805620RJNEA CRCW0805620RJNEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±5%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±5%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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MBR10100-M3/4W MBR10100-M3/4W VISHAY mbr10100.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 6mA
Produkt ist nicht verfügbar
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MBR10100CT-E3/4W MBR10100CT-E3/4W VISHAY mbr1090c.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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SI7469DP-T1-GE3 VISHAY si7469dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -28A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -28A
Pulsed drain current: -40A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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V8PAL45-M3/I VISHAY v8pal45.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO221BC; SMD; 45V; 8A
Type of diode: Schottky rectifying
Case: DO221BC
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 1.85mA
Max. forward impulse current: 120A
Produkt ist nicht verfügbar
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SMAJ12CA-M3/5A SMAJ12CA-M3/5A VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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SMAJ12CA-M3/61 SMAJ12CA-M3/61 VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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SMAJ12CAHE3_A/H SMAJ12CAHE3_A/H VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SMAJ12CAHE3_A/I SMAJ12CAHE3_A/I VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
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SMBJ60CA-E3/5B SMBJ60CA-E3/5B VISHAY smbj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 67.7V; 6.2A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: SMBJ
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SMBJ60CA-M3/52 SMBJ60CA-M3/52 VISHAY smbj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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SMAJ54CA-E3/61 SMAJ54CA-E3/61 VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SMAJ54CAHE3_A/H SMAJ54CAHE3_A/H VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SMAJ54CAHE3_A/I SMAJ54CAHE3_A/I VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
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TZMC2V7-GS08 TZMC2V7-GS08 VISHAY TZMB22-GS08.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; MiniMELF,SOD80; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer standard package: 2500pcs.
auf Bestellung 36193 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
1137+0.075 EUR
1634+0.052 EUR
1859+0.045 EUR
2305+0.037 EUR
2578+0.033 EUR
2995+0.029 EUR
5000+0.025 EUR
7500+0.024 EUR
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BZT52C2V7-E3-08 BZT52C2V7-E3-08 VISHAY bzt52_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
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Lieferzeit 14-21 Tag (e)
500+0.17 EUR
705+0.12 EUR
807+0.11 EUR
1000+0.086 EUR
1292+0.065 EUR
1450+0.058 EUR
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BZT55C2V7-GS08 BZT55C2V7-GS08 VISHAY BZT55C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; QuadroMELF,SOD80; 7 inch reel; BZT55
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: QuadroMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer standard package: 2500pcs.
Manufacturer series: BZT55
auf Bestellung 2505 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
650+0.13 EUR
736+0.12 EUR
975+0.087 EUR
1235+0.069 EUR
1382+0.062 EUR
2500+0.051 EUR
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CRCW080533R0FKTABC CRCW080533R0FKTABC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 33Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 33Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2.2x1.4x0.5mm
Quantity in set/package: 5000pcs.
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D2TO020C100R0FRE3 D2TO020C100R0FRE3 VISHAY d2to20.pdf Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Quantity in set/package: 500pcs.
Mounting: SMD
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D2TO020C100R0FTE3 D2TO020C100R0FTE3 VISHAY d2to20.pdf Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Quantity in set/package: 50pcs.
Mounting: SMD
Produkt ist nicht verfügbar
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D2TO020C100R0JTE3 D2TO020C100R0JTE3 VISHAY d2to20.pdf Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±5%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
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SIHFL9110TR-GE3 sihfl911.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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CMB02070X1821FB700
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.82kΩ; SMD; MELF; 0207; 1W; ±1%; 500V
Type of resistor: carbon film
Resistance: 1.82kΩ
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
Produkt ist nicht verfügbar
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TNPW0402100KBXEP tnpw_e3.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 100kΩ; 0402; 130mW; ±0.1%; ESD; 15ppm/°C
Type of resistor: thin film
Resistance: 100kΩ
Case - inch: 0402
Case - mm: 1005
Power: 130mW
Tolerance: ±0.1%
Version: ESD
Temperature coefficient: 15ppm/°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.43 EUR
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BAW56-G3-18 112_PdfFile_828878.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 250mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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BAW56-HE3_A-08 baw56.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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BAW56-HE3_A-18 baw56.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
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SIHB150N60E-GE3 sihb150n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 43A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 43A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
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SIHP150N60E-GE3 sihp150n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MAL211990502E3 119ahtdin.pdf
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 10VDC; 10x25mm; 4000h
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 470µF
Operating voltage: 10V DC
Body dimensions: 10x25mm
Tolerance: -10...50%
Service life: 4000h
Impedance: 0.49Ω
Operating temperature: -55...125°C
ESR value: 610mΩ
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+2.02 EUR
Mindestbestellmenge: 500 Stücke
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SM6T200CA-E3/52 sm6t.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 190V; 2.2A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
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CRCW06031R00JNTABC Data Sheet CRCW_BCe3.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1Ω; SMD; 0603; 0.1W; ±5%; CRCW0603; 75V
Type of resistor: thick film
Resistance:
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Manufacturer series: CRCW0603
Operating voltage: 75V
Operating temperature: -55...155°C
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P6KE6.8A-E3/73 p6ke.pdf
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel
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P6KE6.8AHE3/54 p6ke.pdf
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel
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MCL103A-TR MCL103A-TR.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 15A
Manufacturer standard package: 2500pcs.
Features of semiconductor devices: small signal
Kind of package: 7 inch reel
auf Bestellung 18474 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
280+0.31 EUR
472+0.18 EUR
660+0.13 EUR
1000+0.11 EUR
2500+0.098 EUR
5000+0.089 EUR
7500+0.084 EUR
12500+0.083 EUR
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MCL103C-TR mcl103a.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 20V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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MCL103A-TR3 mcl103a.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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MCL103B-TR3 mcl103a.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
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BZT52C24-E3-08 bzt52_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
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BZT52C24-E3-18 bzt52_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
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BZT52C24-G3-08 bzt52-g_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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BZT52C24-G3-18 bzt52-g_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
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MCL101A-TR mcl101a.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1V
Max. off-state voltage: 60V
Load current: 30mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Type of diode: Schottky switching
auf Bestellung 2190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
736+0.12 EUR
787+0.11 EUR
823+0.1 EUR
852+0.1 EUR
1000+0.093 EUR
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MAL205847103E3 058059pll-si.pdf
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 10mF; 40VDC; Ø30x50mm; ±20%
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 10mF
Height: 50mm
Operating voltage: 40V DC
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MMU01020C9102FB300 33.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal film; 91kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 91kΩ
Mounting: SMD
Power: 0.3W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: Ø1.1x2.2mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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UF4002-E3/54 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4003-E3/73 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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UF4004-E3/73 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4004-M3/54 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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UF4006-E3/73 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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UF4005-E3/73 uf4001.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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SS16-M3/5AT SS12-SS16.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Produkt ist nicht verfügbar
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SS16HM3_B/I ss12.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Produkt ist nicht verfügbar
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ES2D-M3/52T es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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ES2D-M3/5BT es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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ES2DHM3_A/I es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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1.5KE22A-E3/54 15ke_Ser.pdf
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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RCA0805620RFKEA rcae3.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Tolerance: ±1%
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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CRCW0805620KFKEA 1.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620kΩ
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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CRCW0805620RFHEAP 56.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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CRCW0805620RJNEA 1.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±5%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±5%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MBR10100-M3/4W mbr10100.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 6mA
Produkt ist nicht verfügbar
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MBR10100CT-E3/4W mbr1090c.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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SI7469DP-T1-GE3 si7469dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -28A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -28A
Pulsed drain current: -40A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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V8PAL45-M3/I v8pal45.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO221BC; SMD; 45V; 8A
Type of diode: Schottky rectifying
Case: DO221BC
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 1.85mA
Max. forward impulse current: 120A
Produkt ist nicht verfügbar
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SMAJ12CA-M3/5A smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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SMAJ12CA-M3/61 smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SMAJ12CAHE3_A/H smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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SMAJ12CAHE3_A/I smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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SMBJ60CA-E3/5B smbj.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 67.7V; 6.2A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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SMBJ60CA-M3/52 smbj.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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SMAJ54CA-E3/61 smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ54CAHE3_A/H smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ54CAHE3_A/I smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TZMC2V7-GS08 TZMB22-GS08.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; MiniMELF,SOD80; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer standard package: 2500pcs.
auf Bestellung 36193 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
1137+0.075 EUR
1634+0.052 EUR
1859+0.045 EUR
2305+0.037 EUR
2578+0.033 EUR
2995+0.029 EUR
5000+0.025 EUR
7500+0.024 EUR
Mindestbestellmenge: 417 Stücke
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BZT52C2V7-E3-08 bzt52_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
705+0.12 EUR
807+0.11 EUR
1000+0.086 EUR
1292+0.065 EUR
1450+0.058 EUR
Mindestbestellmenge: 500 Stücke
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BZT55C2V7-GS08 BZT55C_ser.pdf
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; QuadroMELF,SOD80; 7 inch reel; BZT55
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: QuadroMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer standard package: 2500pcs.
Manufacturer series: BZT55
auf Bestellung 2505 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
650+0.13 EUR
736+0.12 EUR
975+0.087 EUR
1235+0.069 EUR
1382+0.062 EUR
2500+0.051 EUR
Mindestbestellmenge: 455 Stücke
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CRCW080533R0FKTABC Data+Sheet+CRCW_BCe3.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 33Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 33Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2.2x1.4x0.5mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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D2TO020C100R0FRE3 d2to20.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Quantity in set/package: 500pcs.
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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D2TO020C100R0FTE3 d2to20.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Quantity in set/package: 50pcs.
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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D2TO020C100R0JTE3 d2to20.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 100Ω; SMD; TO263; 25W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Power: 25W
Tolerance: ±5%
Operating temperature: -55...155°C
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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