| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRL620SPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| IRL620STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IL217AT | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8 Mounting: SMD Case: SO8 Turn-on time: 3µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3kV CTR@If: 13%@1mA Type of optocoupler: optocoupler Collector-emitter voltage: 70V |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitors series: Tantamount Capacitance: 4.7µF Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Operating voltage: 6.3V DC Case - inch: 1206 Case: A Case - mm: 3216 |
Produkt ist nicht verfügbar |
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BZT03C24-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode Type of diode: Zener Power dissipation: 3.25W Zener voltage: 24V Kind of package: Ammo Pack Case: SOD57 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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P6SMB16CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB16CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB16CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB16CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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| SI7806ADN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |
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| SI7806ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |
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| IRFI740GLCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Pulsed drain current: 23A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBA02040C6808FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 6.8Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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MBB02070C6808FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 6.8Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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MMB02070C6808FB200 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm Operating temperature: -55...155°C Mounting: SMD Max. operating voltage: 300V Conform to the norm: AEC Q200 Type of resistor: thin film Case: 0207 MELF Power: 0.4W Resistance: 6.8Ω Tolerance: ±1% Body dimensions: Ø2.2x5.8mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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P600G-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 0.9V Reverse recovery time: 2.5µs |
auf Bestellung 1396 Stücke: Lieferzeit 14-21 Tag (e) |
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P600G-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 22A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 1.3V Leakage current: 1mA Reverse recovery time: 2.5µs |
auf Bestellung 2078 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2387DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Case: SOT23 Drain-source voltage: -80V Drain current: -3A On-state resistance: 242mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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PR01000104700JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 470Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000104709JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial Type of resistor: power metal Mounting: THT Resistance: 47Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000104308FA500 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Leads: axial Mounting: THT Type of resistor: power metal Power: 1W Resistance: 4.3Ω Tolerance: ±5% Body dimensions: Ø2.5x8mm Temperature coefficient: 250ppm/°C Max. operating voltage: 350V Resistor features: high power and small dimension |
auf Bestellung 857 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000104708JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 4.7Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFR014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR014TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR014PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFR014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Drain-source voltage: 60V Drain current: 4.9A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Mounting: SMD Case: DPAK; TO252 |
Produkt ist nicht verfügbar |
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| VO1263AAC | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV Case: Gull wing 8 |
Produkt ist nicht verfügbar |
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| RGL34D-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RGL34G-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 400V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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RGL34J-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RGL34KHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 800V Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SIZ340ADT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISH472DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 20A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |
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VJ1206A102JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206Y104KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| SISH101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 33W Kind of package: reel; tape Polarisation: unipolar Gate charge: 102nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -35A On-state resistance: 13mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SS33-E3/57T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
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| SS33-E3/9AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
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| GSIB2580N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Version: flat Load current: 25A Max. forward impulse current: 350A Kind of package: tube Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: GSIB-5S Leads: flat pin Max. off-state voltage: 0.8kV Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
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SMBJ10CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.3V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 3227 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ12CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.5V Max. forward impulse current: 30.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 1209 Stücke: Lieferzeit 14-21 Tag (e) |
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K827PH | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@60mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ14CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.8V Max. forward impulse current: 26.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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ES2G-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMB Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 3890 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2GHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMB Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 737 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C Power: 0.125W Resistance: 620kΩ Tolerance: ±5% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film |
auf Bestellung 3699 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C Power: 0.125W Resistance: 620Ω Tolerance: ±1% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film |
auf Bestellung 7900 Stücke: Lieferzeit 14-21 Tag (e) |
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| GSC00AD3301EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 33µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 6.3x5.7mm Height: 5.7mm |
Produkt ist nicht verfügbar |
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593D336X0025E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: E Case - inch: 2917 Case - mm: 7343 Tolerance: ±20% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
Produkt ist nicht verfügbar |
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593D336X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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593D336X9025E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: E Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
Produkt ist nicht verfügbar |
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GRC00PB3302ATNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Operating voltage: 100V DC Dimensions: 8x11.5mm Type of capacitor: electrolytic Capacitance: 33µF Service life: 2000h |
auf Bestellung 4700 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL203859339E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 33µF Operating voltage: 100V DC Body dimensions: Ø8x11.5mm Terminal pitch: 3.5mm Tolerance: ±20% Service life: 2500h Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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ZSC00AG3302AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 33µF Operating voltage: 100V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9610SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9610STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9620SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W Kind of package: reel; tape Drain-source voltage: -200V Drain current: -3.5A On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Mounting: SMD Case: D2PAK; TO263 |
Produkt ist nicht verfügbar |
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| IRF9630STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W Kind of package: reel; tape Drain-source voltage: -200V Drain current: -6.5A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD Case: D2PAK; TO263 |
Produkt ist nicht verfügbar |
| IRL620SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IRL620STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IL217AT | |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 112+ | 0.64 EUR |
| 125+ | 0.57 EUR |
| 139+ | 0.51 EUR |
| 166+ | 0.43 EUR |
| 173+ | 0.41 EUR |
| 500+ | 0.39 EUR |
| 293D475X96R3A2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 4.7µF
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Operating voltage: 6.3V DC
Case - inch: 1206
Case: A
Case - mm: 3216
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 4.7µF
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Operating voltage: 6.3V DC
Case - inch: 1206
Case: A
Case - mm: 3216
Produkt ist nicht verfügbar
| BZT03C24-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| P6SMB16CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB16CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB16CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB16CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| SI7806ADN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
| SI7806ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
| IRFI740GLCPBF | |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBA02040C6808FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| MBB02070C6808FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.21 EUR |
| MMB02070C6808FB200 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Max. operating voltage: 300V
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Max. operating voltage: 300V
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| P600G-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 76+ | 0.95 EUR |
| 88+ | 0.81 EUR |
| 96+ | 0.75 EUR |
| 161+ | 0.45 EUR |
| 170+ | 0.42 EUR |
| P600G-E3/73 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
auf Bestellung 2078 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 71+ | 1.02 EUR |
| 76+ | 0.95 EUR |
| 88+ | 0.82 EUR |
| 161+ | 0.45 EUR |
| 170+ | 0.42 EUR |
| SI2387DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| PR01000104700JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 610+ | 0.12 EUR |
| 1140+ | 0.063 EUR |
| 1330+ | 0.054 EUR |
| 1580+ | 0.045 EUR |
| 1670+ | 0.043 EUR |
| PR01000104709JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.2 EUR |
| PR01000104308FA500 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Leads: axial
Mounting: THT
Type of resistor: power metal
Power: 1W
Resistance: 4.3Ω
Tolerance: ±5%
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 350V
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Leads: axial
Mounting: THT
Type of resistor: power metal
Power: 1W
Resistance: 4.3Ω
Tolerance: ±5%
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 350V
Resistor features: high power and small dimension
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| PR01000104708JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 760+ | 0.095 EUR |
| 1030+ | 0.07 EUR |
| 1370+ | 0.052 EUR |
| 1590+ | 0.045 EUR |
| IRFR014TRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR014TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR014TRRPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRLR014PBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 82+ | 0.87 EUR |
| 138+ | 0.52 EUR |
| 188+ | 0.38 EUR |
| 199+ | 0.36 EUR |
| IRLR014TRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFR014TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Produkt ist nicht verfügbar
| VO1263AAC |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
Produkt ist nicht verfügbar
| RGL34D-E3/98 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RGL34G-E3/98 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 154+ | 0.47 EUR |
| 195+ | 0.37 EUR |
| 268+ | 0.27 EUR |
| 283+ | 0.25 EUR |
| RGL34J-E3/98 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RGL34KHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SIZ340ADT-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH472DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
| VJ1206A102JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 400+ | 0.17 EUR |
| VJ1206Y104KXXCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| SISH101DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SS33-E3/57T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| SS33-E3/9AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| GSIB2580N-M3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Version: flat
Load current: 25A
Max. forward impulse current: 350A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GSIB-5S
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Version: flat
Load current: 25A
Max. forward impulse current: 350A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GSIB-5S
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 1V
Produkt ist nicht verfügbar
| SMBJ10CD-M3/H |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 3227 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 243+ | 0.29 EUR |
| 516+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 674+ | 0.11 EUR |
| 713+ | 0.1 EUR |
| SMBJ12CD-M3/H |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 1209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 243+ | 0.29 EUR |
| 506+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 661+ | 0.11 EUR |
| 699+ | 0.1 EUR |
| K827PH |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 116+ | 0.62 EUR |
| 135+ | 0.53 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.38 EUR |
| 500+ | 0.37 EUR |
| SMBJ14CD-M3/H |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
| ES2G-E3/52T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 323+ | 0.22 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| ES2GHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.05 EUR |
| 119+ | 0.6 EUR |
| 135+ | 0.53 EUR |
| 157+ | 0.46 EUR |
| 167+ | 0.43 EUR |
| CRCW0805620KJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
auf Bestellung 3699 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2300+ | 0.032 EUR |
| CRCW0805620RFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
auf Bestellung 7900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4000+ | 0.018 EUR |
| 6500+ | 0.011 EUR |
| 7900+ | 0.009 EUR |
| GSC00AD3301EARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x5.7mm
Height: 5.7mm
Produkt ist nicht verfügbar
| 593D336X0025E2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Produkt ist nicht verfügbar
| 593D336X9025D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| 593D336X9025E2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Produkt ist nicht verfügbar
| GRC00PB3302ATNL |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Operating voltage: 100V DC
Dimensions: 8x11.5mm
Type of capacitor: electrolytic
Capacitance: 33µF
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Operating voltage: 100V DC
Dimensions: 8x11.5mm
Type of capacitor: electrolytic
Capacitance: 33µF
Service life: 2000h
auf Bestellung 4700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 790+ | 0.091 EUR |
| 1030+ | 0.07 EUR |
| 1280+ | 0.056 EUR |
| 1350+ | 0.053 EUR |
| MAL203859339E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø8x11.5mm
Terminal pitch: 3.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø8x11.5mm
Terminal pitch: 3.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| ZSC00AG3302AARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 0.47 EUR |
| 240+ | 0.3 EUR |
| 420+ | 0.17 EUR |
| 450+ | 0.16 EUR |
| IRF9610SPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9610STRRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9620SPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -3.5A
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Mounting: SMD
Case: D2PAK; TO263
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -3.5A
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Mounting: SMD
Case: D2PAK; TO263
Produkt ist nicht verfügbar
| IRF9630STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: D2PAK; TO263
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: D2PAK; TO263
Produkt ist nicht verfügbar