| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRFP26N60LPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 100A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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B40C800DM-E3/45 | VISHAY |
 Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM Max. off-state voltage: 65V Max. forward impulse current: 45A Case: DFM Kind of package: tube Features of semiconductor devices: glass passivated Electrical mounting: THT Max. forward voltage: 1V Load current: 0.9A Type of bridge rectifier: single-phase |
auf Bestellung 2729 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFP17N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 64A Power dissipation: 220W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IHLP6767GZER101M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 0.105Ω Tolerance: ±20% Body dimensions: 17.15x17.15x7mm Operating current: 5A Inductance: 0.1mH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
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GBU4A-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU4A-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF540STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF540STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| VJ0201G104KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...85°C |
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VJ0402Y104KXJPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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SA60A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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SA60A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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SA60CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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SA60CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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AC03000001007JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Operating temperature: -50...250°C Resistor features: non-flammable Temperature coefficient: 80ppm/°C Leads: axial |
auf Bestellung 1836 Stücke: Lieferzeit 14-21 Tag (e) |
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RTO020FR0100JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C Mounting: THT Case: TO220 Resistance: 0.1Ω Operating temperature: -55...155°C Tolerance: ±5% Type of resistor: thick film Max. operating voltage: 250V Resistor features: needs additional heatsink Recommended heatsink: thermal resistance 6,5K/W Power without heatsink: 2W Power: 20W |
Produkt ist nicht verfügbar |
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| VS-4ESH01HM3/86A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MAL205943331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20% Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø25x50mm Type of capacitor: electrolytic Capacitance: 330µF Operating voltage: 250V DC Service life: 10000h |
Produkt ist nicht verfügbar |
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| MAL205952151E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20% Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø22x30mm Type of capacitor: electrolytic Capacitance: 150µF Operating voltage: 200V DC Service life: 10000h |
Produkt ist nicht verfügbar |
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GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| GIB2404-E3/81 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 16A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 125A Max. forward voltage: 0.895V Leakage current: 0.5mA |
Produkt ist nicht verfügbar |
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4N32 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 500%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
auf Bestellung 973 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR9220TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9220TRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4056ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 29nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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VJ0603A151FXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A151JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ0603A151JXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A151JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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| VJ1111D100JXRAJ | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 25730 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R3300FEA | VISHAY |
Category: SMD resistors Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 1623 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF510STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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IRF830ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF830BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFP048PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF840BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
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| IRF840LCLPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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| IRF840LCSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF840STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Mounting: SMD Case: D2PAK; TO263 Polarisation: unipolar On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 88W Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -48A Drain-source voltage: -100V Drain current: -12A |
Produkt ist nicht verfügbar |
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| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Mounting: SMD Case: D2PAK; TO263 Polarisation: unipolar On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 88W Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -48A Drain-source voltage: -100V Drain current: -12A |
Produkt ist nicht verfügbar |
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| IRFB13N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| ZSC00AK1021VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 1mF Operating voltage: 35V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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SI4431BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 0.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1364 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233660222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm Operating voltage: 300V AC; 1kV DC Climate class: 55/105/56 Kind of capacitor: Y2 Mounting: THT Terminal pitch: 10mm Tolerance: ±20% Body dimensions: 4x10x12.5mm Leads dimensions: L 3.5mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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| BFC233663222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC Mounting: THT Type of capacitor: polypropylene Capacitance: 2.2nF Operating voltage: 300V AC; 1kV DC Body dimensions: 12.5x4x10mm Terminal pitch: 10mm Tolerance: ±20% |
Produkt ist nicht verfügbar |
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| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
Produkt ist nicht verfügbar |
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| SISS588DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36.3W Gate charge: 28.5nC Polarisation: unipolar Drain current: 46.5A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET On-state resistance: 9.3mΩ Gate-source voltage: ±20V Pulsed drain current: 150A |
Produkt ist nicht verfügbar |
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CRCW0402220RFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 220Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 38700 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP4040DZER330M8A | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP Mounting: SMD Resistance: 0.11Ω Tolerance: ±20% Body dimensions: 10.3x10.3x4mm Operating temperature: -55...125°C Manufacturer series: IHLP Operating current: 3.7A Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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| IHLP6767DZER330M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 64.4mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x4mm Operating current: 6A Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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| IHLP6767GZER330M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 35.1mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x7mm Operating current: 10.7A Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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| BZW04-188B-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape Type of diode: TVS Max. off-state voltage: 188V Breakdown voltage: 209...231V Max. forward impulse current: 1.4A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.4kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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PR03000202203JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 220kΩ Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
| IRFP26N60LPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| B40C800DM-E3/45 |
|
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM
Max. off-state voltage: 65V
Max. forward impulse current: 45A
Case: DFM
Kind of package: tube
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Max. forward voltage: 1V
Load current: 0.9A
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM
Max. off-state voltage: 65V
Max. forward impulse current: 45A
Case: DFM
Kind of package: tube
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Max. forward voltage: 1V
Load current: 0.9A
Type of bridge rectifier: single-phase
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 203+ | 0.35 EUR |
| 243+ | 0.29 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| IRFP17N50LPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IHLP6767GZER101M11 |
|
Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 0.105Ω
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 5A
Inductance: 0.1mH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 0.105Ω
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 5A
Inductance: 0.1mH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
| GBU4A-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| 61+ | 1.17 EUR |
| 79+ | 0.92 EUR |
| 83+ | 0.87 EUR |
| GBU4A-E3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 69+ | 1.05 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| 250+ | 0.77 EUR |
| IRF540STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF540STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| VJ0201G104KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
| VJ0402Y104KXJPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| SA60A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| SA60A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| SA60CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| SA60CA-E3/73 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| AC03000001007JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
auf Bestellung 1836 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 78+ | 0.92 EUR |
| 158+ | 0.45 EUR |
| 248+ | 0.29 EUR |
| 317+ | 0.23 EUR |
| 336+ | 0.21 EUR |
| RTO020FR0100JTE3 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C
Mounting: THT
Case: TO220
Resistance: 0.1Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 250V
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 6,5K/W
Power without heatsink: 2W
Power: 20W
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C
Mounting: THT
Case: TO220
Resistance: 0.1Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 250V
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 6,5K/W
Power without heatsink: 2W
Power: 20W
Produkt ist nicht verfügbar
| VS-4ESH01HM3/86A |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MAL205943331E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø25x50mm
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 250V DC
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø25x50mm
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 250V DC
Service life: 10000h
Produkt ist nicht verfügbar
| MAL205952151E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø22x30mm
Type of capacitor: electrolytic
Capacitance: 150µF
Operating voltage: 200V DC
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø22x30mm
Type of capacitor: electrolytic
Capacitance: 150µF
Operating voltage: 200V DC
Service life: 10000h
Produkt ist nicht verfügbar
| GSC00AF2211VARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 210+ | 0.35 EUR |
| 330+ | 0.22 EUR |
| 430+ | 0.17 EUR |
| 480+ | 0.14 EUR |
| GIB2404-E3/81 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 125A
Max. forward voltage: 0.895V
Leakage current: 0.5mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 125A
Max. forward voltage: 0.895V
Leakage current: 0.5mA
Produkt ist nicht verfügbar
| 4N32 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 500%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 500%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 156+ | 0.46 EUR |
| 211+ | 0.34 EUR |
| 223+ | 0.32 EUR |
| IRFR9220PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 102+ | 0.7 EUR |
| 116+ | 0.62 EUR |
| 130+ | 0.55 EUR |
| 137+ | 0.52 EUR |
| IRFR9220TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9220TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9220TRRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4056ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 29nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 29nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
| VJ0603A151FXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 260+ | 0.27 EUR |
| VJ0603A151JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A151JXBAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 640+ | 0.11 EUR |
| 1370+ | 0.052 EUR |
| 1450+ | 0.05 EUR |
| VJ0603A151JXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ1111D100JXRAJ |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| BZX55C3V0-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 25730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1050+ | 0.069 EUR |
| 2060+ | 0.035 EUR |
| 2570+ | 0.028 EUR |
| 2880+ | 0.025 EUR |
| 3040+ | 0.024 EUR |
| 10000+ | 0.023 EUR |
| WSL2512R3300FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1623 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 166+ | 0.43 EUR |
| 224+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| IRF510STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF830ALPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 54+ | 1.34 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| IRF830ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF830ASTRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF830BPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFP048PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840ASTRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840BPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840LCLPBF | |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840LCSPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9530STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Produkt ist nicht verfügbar
| IRF9530STRRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Produkt ist nicht verfügbar
| IRFB13N50APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZSC00AK1021VARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| SI4431BDY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| 76+ | 0.95 EUR |
| 94+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.71 EUR |
| BFC233660222 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm
Operating voltage: 300V AC; 1kV DC
Climate class: 55/105/56
Kind of capacitor: Y2
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm
Operating voltage: 300V AC; 1kV DC
Climate class: 55/105/56
Kind of capacitor: Y2
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 95+ | 0.76 EUR |
| 148+ | 0.49 EUR |
| 246+ | 0.29 EUR |
| BFC233663222 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Mounting: THT
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Terminal pitch: 10mm
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Mounting: THT
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Terminal pitch: 10mm
Tolerance: ±20%
Produkt ist nicht verfügbar
| SISS5808DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| SISS588DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Gate charge: 28.5nC
Polarisation: unipolar
Drain current: 46.5A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 9.3mΩ
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Gate charge: 28.5nC
Polarisation: unipolar
Drain current: 46.5A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 9.3mΩ
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| CRCW0402220RFKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 38700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3100+ | 0.023 EUR |
| 9400+ | 0.0077 EUR |
| 29500+ | 0.0024 EUR |
| IHLP4040DZER330M8A |
|
Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP
Mounting: SMD
Resistance: 0.11Ω
Tolerance: ±20%
Body dimensions: 10.3x10.3x4mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Operating current: 3.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP
Mounting: SMD
Resistance: 0.11Ω
Tolerance: ±20%
Body dimensions: 10.3x10.3x4mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Operating current: 3.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
| IHLP6767DZER330M11 |
|
Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 64.4mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 6A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 64.4mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 6A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
| IHLP6767GZER330M11 |
|
Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 35.1mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 10.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 35.1mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 10.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
| BZW04-188B-E3/73 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape
Type of diode: TVS
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape
Type of diode: TVS
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| PR03000202203JAC00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar