Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AC05000003908JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9Ω; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Resistance: 3.9Ω Conform to the norm: AEC Q200 Type of resistor: wire-wound Tolerance: ±5% |
Produkt ist nicht verfügbar |
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AC05000003909JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 39Ω; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Resistance: 39Ω Conform to the norm: AEC Q200 Type of resistor: wire-wound Tolerance: ±5% |
Produkt ist nicht verfügbar |
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AC05000005609JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 56Ω; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Conform to the norm: AEC Q200 Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Tolerance: ±5% Resistance: 56Ω Type of resistor: wire-wound |
Produkt ist nicht verfügbar |
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AC05000006807JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 680mΩ; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Resistance: 0.68Ω Conform to the norm: AEC Q200 Type of resistor: wire-wound Tolerance: ±5% |
Produkt ist nicht verfügbar |
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AC05000008207JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 820mΩ; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Resistance: 0.82Ω Conform to the norm: AEC Q200 Type of resistor: wire-wound Tolerance: ±5% |
Produkt ist nicht verfügbar |
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AC05000008208JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 8.2Ω; 5W; ±5%; Ø7.5x18mm; axial Power: 5W Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Resistance: 8.2Ω Conform to the norm: AEC Q200 Type of resistor: wire-wound Tolerance: ±5% |
Produkt ist nicht verfügbar |
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AC04000004707JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 470mΩ; 4W; ±5%; Ø5.5x16.5mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 0.47Ω Power: 4W Tolerance: ±5% Body dimensions: Ø5.5x16.5mm Leads: axial Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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DF02S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DF02S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 2174 Stücke: Lieferzeit 14-21 Tag (e) |
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DF02SA-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 30A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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EDF1DS-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ17A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ17D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 19.2V; 22.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 19.2V Max. forward impulse current: 22.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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FEP30DP-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: tube Max. forward impulse current: 300A Case: TO247AD-3 Max. forward voltage: 0.95V Reverse recovery time: 35ns |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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FEP30FP-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 300A; TO247AD-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 175pF Kind of package: tube Max. forward impulse current: 300A Case: TO247AD-3 Max. forward voltage: 1.3V Leakage current: 0.5mA Reverse recovery time: 50ns |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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FEP30GP-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 300A; TO247AD-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 175pF Kind of package: tube Max. forward impulse current: 300A Case: TO247AD-3 Max. forward voltage: 1.3V Leakage current: 0.5mA Reverse recovery time: 50ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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S1M-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 6245 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040C2200FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 220Ω; 250mW; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 220Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040C2201FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.2kΩ; 250mW; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 2.2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4153EY-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 2.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 8.32mΩ Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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TR3D107K020C0100 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 100uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Case: D Mounting: SMD ESR value: 100mΩ Type of capacitor: tantalum Capacitors series: TR3 Capacitance: 100µF Operating voltage: 20V DC Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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593D227X0010E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; E; 2917; ±20%; 100mΩ Case: E Mounting: SMD ESR value: 100mΩ Type of capacitor: tantalum Capacitors series: Tantamount Capacitance: 220µF Operating voltage: 10V DC Case - inch: 2917 Case - mm: 7343 Tolerance: ±20% Kind of capacitor: low ESR Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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SI4126DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 39A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 7.8W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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MBB02070C5602FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 56kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 56kΩ Tolerance: ±1% Power: 0.6W Operating temperature: -55...155°C Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Leads: axial |
auf Bestellung 4650 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C5603FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 560kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 560kΩ |
auf Bestellung 3350 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C5604FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 5.6MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Operating temperature: -55...155°C Body dimensions: Ø2.5x6.5mm Tolerance: ±1% Resistance: 5.6MΩ Leads: axial Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm Type of resistor: metal film |
Produkt ist nicht verfügbar |
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MBB02070C5608FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 5.6Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Operating temperature: -55...155°C Body dimensions: Ø2.5x6.5mm Tolerance: ±1% Resistance: 5.6Ω Leads: axial Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm Type of resistor: metal film |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C5620FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 562Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Operating temperature: -55...155°C Body dimensions: Ø2.5x6.5mm Tolerance: ±1% Resistance: 562Ω Leads: axial Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm Type of resistor: metal film |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C5621FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 5.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 5.62kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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MBB02070C5622FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 56.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 56.2kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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TDSR0760 | VISHAY |
Category: 7-segment LED displays Description: Display: LED; 7-segment; 7mm; 0.28"; No.char: 1; red; 0.18÷2.2mcd Type of display: LED Kind of display: 7-segment Digit height: 7mm; 0.28" Number of characters: 1 Colour: red Luminosity: 0.18...2.2mcd Common electrode: cathode Dimensions: 7.4x9.9x7mm Mounting: THT Wavelength: 640nm Operating current: 1mA Operating voltage: 1.8...2.4V |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHG33N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 101A; 313W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 101A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 173nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SiHG44N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 154A; 417W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 154A Power dissipation: 417W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 278nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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VS-70HFR30 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 300V; 1.35V; 70A; anode to stud; DO203AB,DO5 Kind of package: bulk Manufacturer series: VS-7xHF(R) Fastening thread: 1/4"-28UNF-2A Max. off-state voltage: 300V Max. load current: 110A Max. forward voltage: 1.35V Load current: 70A Semiconductor structure: anode to stud Max. forward impulse current: 1kA Type of diode: rectifying Mounting: screw type Case: DO5; DO203AB |
Produkt ist nicht verfügbar |
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VJ1206A472GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 4.7nF; 50V; C0G (NP0); ±2%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 4.7nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ1206A472GXBAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7nF; 100V; C0G (NP0); ±2%; SMD; 1206 Type of capacitor: ceramic Capacitance: 4.7nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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SI4943BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8.4A On-state resistance: 31mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PB5010-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 45A; Ifsm: 450A Electrical mounting: THT Kind of package: tube Case: PB Leads: flat pin Version: flat Features of semiconductor devices: glass passivated Technology: isoCink+™ Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 45A Max. forward impulse current: 0.45kA |
auf Bestellung 2308 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1023X-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -390mA Pulsed drain current: -0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBRF745-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220FP-2; tube Case: TO220FP-2 Mounting: THT Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.84V Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Type of diode: Schottky rectifying |
auf Bestellung 359 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Pulsed drain current: -25A Power dissipation: 3.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI7465DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -25A; 0.94W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -25A Power dissipation: 0.94W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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VJ1206V225MXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2uF; 16V; Y5V; ±20%; SMD; 1206 Type of capacitor: ceramic Capacitance: 2.2µF Operating voltage: 16V Dielectric: Y5V Tolerance: ±20% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -25...85°C |
Produkt ist nicht verfügbar |
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S1B-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 4969 Stücke: Lieferzeit 14-21 Tag (e) |
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S1D-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 10704 Stücke: Lieferzeit 14-21 Tag (e) |
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S1FLB-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1.5A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 4pF Case: SMF Max. forward voltage: 1.1V Max. forward impulse current: 22A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S1FLD-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.5A; SMF; Ufmax: 1.1V; Ifsm: 22A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMF Max. forward voltage: 1.1V Max. forward impulse current: 22A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S1G-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 40A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 3710 Stücke: Lieferzeit 14-21 Tag (e) |
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S1G-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 7770 Stücke: Lieferzeit 14-21 Tag (e) |
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S1GHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 40A Leakage current: 50µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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S1J-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 12808 Stücke: Lieferzeit 14-21 Tag (e) |
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S1JHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 40A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 2365 Stücke: Lieferzeit 14-21 Tag (e) |
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S1JHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 7400 Stücke: Lieferzeit 14-21 Tag (e) |
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S1PB-M3/84A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 2356 Stücke: Lieferzeit 14-21 Tag (e) |
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S1PDHM3/84A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S1PG-M3/84A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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ES1C-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 150V Kind of package: reel; tape Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Leakage current: 0.1mA Capacitance: 10pF Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching |
Produkt ist nicht verfügbar |
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ES1C-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape Mounting: SMD Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode |
auf Bestellung 6711 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1D-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: DO214AC Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 5174 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1DHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 7405 Stücke: Lieferzeit 14-21 Tag (e) |
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AC05000003908JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 3.9Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 3.9Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Produkt ist nicht verfügbar
AC05000003909JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 39Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 39Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Produkt ist nicht verfügbar
AC05000005609JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 56Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Conform to the norm: AEC Q200
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Tolerance: ±5%
Resistance: 56Ω
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 56Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Conform to the norm: AEC Q200
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Tolerance: ±5%
Resistance: 56Ω
Type of resistor: wire-wound
Produkt ist nicht verfügbar
AC05000006807JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 680mΩ; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 0.68Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Category: Power resistors
Description: Resistor: wire-wound; THT; 680mΩ; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 0.68Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Produkt ist nicht verfügbar
AC05000008207JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 820mΩ; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 0.82Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Category: Power resistors
Description: Resistor: wire-wound; THT; 820mΩ; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 0.82Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Produkt ist nicht verfügbar
AC05000008208JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 8.2Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 8.2Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Category: Power resistors
Description: Resistor: wire-wound; THT; 8.2Ω; 5W; ±5%; Ø7.5x18mm; axial
Power: 5W
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Resistance: 8.2Ω
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Tolerance: ±5%
Produkt ist nicht verfügbar
AC04000004707JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 470mΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.47Ω
Power: 4W
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads: axial
Conform to the norm: AEC Q200
Category: Power resistors
Description: Resistor: wire-wound; THT; 470mΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.47Ω
Power: 4W
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads: axial
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
DF02S-E3/45 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DF02S-E3/77 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2174 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
181+ | 0.4 EUR |
201+ | 0.36 EUR |
270+ | 0.27 EUR |
285+ | 0.25 EUR |
DF02SA-E3/77 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
EDF1DS-E3/45 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMBJ17A-E3/52 |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.25 EUR |
495+ | 0.15 EUR |
560+ | 0.13 EUR |
SMBJ17D-M3/H |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.2V; 22.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.2V
Max. forward impulse current: 22.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.2V; 22.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.2V
Max. forward impulse current: 22.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
FEP30DP-E3/45 |
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 0.95V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 0.95V
Reverse recovery time: 35ns
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.75 EUR |
23+ | 3.17 EUR |
30+ | 2.46 EUR |
31+ | 2.32 EUR |
120+ | 2.29 EUR |
FEP30FP-E3/45 |
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 175pF
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 1.3V
Leakage current: 0.5mA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 175pF
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 1.3V
Leakage current: 0.5mA
Reverse recovery time: 50ns
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.77 EUR |
29+ | 2.49 EUR |
35+ | 2.04 EUR |
38+ | 1.93 EUR |
120+ | 1.86 EUR |
FEP30GP-E3/45 |
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 175pF
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 1.3V
Leakage current: 0.5mA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 175pF
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AD-3
Max. forward voltage: 1.3V
Leakage current: 0.5mA
Reverse recovery time: 50ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
S1M-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 6245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1238+ | 0.058 EUR |
1386+ | 0.052 EUR |
1743+ | 0.041 EUR |
1846+ | 0.039 EUR |
SMM02040C2200FB300 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 220Ω; 250mW; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 220Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 220Ω; 250mW; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 220Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.047 EUR |
SMM02040C2201FB300 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.2kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.2kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1700+ | 0.043 EUR |
3200+ | 0.023 EUR |
3500+ | 0.02 EUR |
SQ4153EY-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.45 EUR |
33+ | 2.23 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
TR3D107K020C0100 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Case: D
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: TR3
Capacitance: 100µF
Operating voltage: 20V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Case: D
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: TR3
Capacitance: 100µF
Operating voltage: 20V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
593D227X0010E2TE3 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; E; 2917; ±20%; 100mΩ
Case: E
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 220µF
Operating voltage: 10V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Kind of capacitor: low ESR
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; E; 2917; ±20%; 100mΩ
Case: E
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 220µF
Operating voltage: 10V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Kind of capacitor: low ESR
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
SI4126DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
MBB02070C5602FCT00 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 56kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 56kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 56kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 56kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
auf Bestellung 4650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
620+ | 0.12 EUR |
1770+ | 0.041 EUR |
1970+ | 0.036 EUR |
MBB02070C5603FCT00 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 560kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 560kΩ
Category: THT Resistors
Description: Resistor: metal film; THT; 560kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 560kΩ
auf Bestellung 3350 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
650+ | 0.11 EUR |
1800+ | 0.04 EUR |
2480+ | 0.029 EUR |
2620+ | 0.027 EUR |
MBB02070C5604FCT00 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 5.6MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 5.6MΩ
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
Category: THT Resistors
Description: Resistor: metal film; THT; 5.6MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 5.6MΩ
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
Produkt ist nicht verfügbar
MBB02070C5608FC100 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 5.6Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 5.6Ω
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
Category: THT Resistors
Description: Resistor: metal film; THT; 5.6Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 5.6Ω
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
380+ | 0.19 EUR |
800+ | 0.089 EUR |
MBB02070C5620FC100 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 562Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 562Ω
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
Category: THT Resistors
Description: Resistor: metal film; THT; 562Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Body dimensions: Ø2.5x6.5mm
Tolerance: ±1%
Resistance: 562Ω
Leads: axial
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Type of resistor: metal film
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
600+ | 0.12 EUR |
MBB02070C5621FC100 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 5.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 5.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 5.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 5.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Produkt ist nicht verfügbar
MBB02070C5622FC100 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 56.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 56.2kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 56.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 56.2kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.39 EUR |
TDSR0760 |
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 7mm; 0.28"; No.char: 1; red; 0.18÷2.2mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 7mm; 0.28"
Number of characters: 1
Colour: red
Luminosity: 0.18...2.2mcd
Common electrode: cathode
Dimensions: 7.4x9.9x7mm
Mounting: THT
Wavelength: 640nm
Operating current: 1mA
Operating voltage: 1.8...2.4V
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 7mm; 0.28"; No.char: 1; red; 0.18÷2.2mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 7mm; 0.28"
Number of characters: 1
Colour: red
Luminosity: 0.18...2.2mcd
Common electrode: cathode
Dimensions: 7.4x9.9x7mm
Mounting: THT
Wavelength: 640nm
Operating current: 1mA
Operating voltage: 1.8...2.4V
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 1.28 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
SiHG33N65E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 101A; 313W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 101A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 101A; 313W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 101A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SiHG44N65EF-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 154A; 417W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 154A
Power dissipation: 417W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 278nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 154A; 417W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 154A
Power dissipation: 417W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 278nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
VS-70HFR30 |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; anode to stud; DO203AB,DO5
Kind of package: bulk
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 300V
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: anode to stud
Max. forward impulse current: 1kA
Type of diode: rectifying
Mounting: screw type
Case: DO5; DO203AB
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; anode to stud; DO203AB,DO5
Kind of package: bulk
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 300V
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: anode to stud
Max. forward impulse current: 1kA
Type of diode: rectifying
Mounting: screw type
Case: DO5; DO203AB
Produkt ist nicht verfügbar
VJ1206A472GXACW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 50V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 50V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
VJ1206A472GXBAT |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 100V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 100V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
SI4943BDY-T1-E3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
PB5010-E3/45 |
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 45A; Ifsm: 450A
Electrical mounting: THT
Kind of package: tube
Case: PB
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 45A
Max. forward impulse current: 0.45kA
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 45A; Ifsm: 450A
Electrical mounting: THT
Kind of package: tube
Case: PB
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 45A
Max. forward impulse current: 0.45kA
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.36 EUR |
22+ | 3.33 EUR |
23+ | 3.15 EUR |
1200+ | 3.13 EUR |
SI1023X-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
MBRF745-E3/45 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220FP-2; tube
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220FP-2; tube
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.66 EUR |
49+ | 1.49 EUR |
55+ | 1.32 EUR |
66+ | 1.09 EUR |
71+ | 1.02 EUR |
SI7465DP-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Pulsed drain current: -25A
Power dissipation: 3.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Pulsed drain current: -25A
Power dissipation: 3.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI7465DP-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -25A; 0.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -25A
Power dissipation: 0.94W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -25A; 0.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -25A
Power dissipation: 0.94W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
VJ1206V225MXJTW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 16V; Y5V; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -25...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 16V; Y5V; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -25...85°C
Produkt ist nicht verfügbar
S1B-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 4969 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
608+ | 0.12 EUR |
1356+ | 0.053 EUR |
1806+ | 0.04 EUR |
1909+ | 0.037 EUR |
S1D-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 10704 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1230+ | 0.058 EUR |
1365+ | 0.052 EUR |
1780+ | 0.04 EUR |
1880+ | 0.038 EUR |
S1FLB-GS08 |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
S1FLD-GS08 |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; SMF; Ufmax: 1.1V; Ifsm: 22A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; SMF; Ufmax: 1.1V; Ifsm: 22A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Kind of package: reel; tape
Produkt ist nicht verfügbar
S1G-E3/5AT |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 3710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
720+ | 0.1 EUR |
1260+ | 0.057 EUR |
1400+ | 0.051 EUR |
1920+ | 0.037 EUR |
2030+ | 0.035 EUR |
S1G-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 7770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1230+ | 0.058 EUR |
1365+ | 0.052 EUR |
1745+ | 0.041 EUR |
1850+ | 0.039 EUR |
S1GHE3_A/H |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
855+ | 0.084 EUR |
950+ | 0.076 EUR |
1250+ | 0.057 EUR |
1320+ | 0.054 EUR |
S1J-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 12808 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1225+ | 0.058 EUR |
1370+ | 0.052 EUR |
1875+ | 0.038 EUR |
1985+ | 0.036 EUR |
S1JHE3_A/H |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
855+ | 0.084 EUR |
950+ | 0.076 EUR |
1295+ | 0.055 EUR |
1370+ | 0.052 EUR |
S1JHE3_A/I |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 7400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
855+ | 0.084 EUR |
950+ | 0.076 EUR |
1300+ | 0.055 EUR |
1375+ | 0.052 EUR |
S1PB-M3/84A |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
530+ | 0.14 EUR |
720+ | 0.1 EUR |
985+ | 0.073 EUR |
1040+ | 0.069 EUR |
S1PDHM3/84A |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
S1PG-M3/84A |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
ES1C-E3/5AT |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 150V
Kind of package: reel; tape
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Capacitance: 10pF
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 150V
Kind of package: reel; tape
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Capacitance: 10pF
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Produkt ist nicht verfügbar
ES1C-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
auf Bestellung 6711 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
203+ | 0.35 EUR |
329+ | 0.22 EUR |
391+ | 0.18 EUR |
432+ | 0.17 EUR |
1137+ | 0.063 EUR |
1191+ | 0.06 EUR |
RS1D-E3/61T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 5174 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
527+ | 0.14 EUR |
697+ | 0.1 EUR |
908+ | 0.079 EUR |
960+ | 0.075 EUR |
RS1DHE3_A/I |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 7405 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
265+ | 0.27 EUR |
295+ | 0.24 EUR |
385+ | 0.19 EUR |
405+ | 0.18 EUR |