V8P22HM3/H Vishay General Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.44 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.65 EUR |
| 1500+ | 0.61 EUR |
| 3000+ | 0.55 EUR |
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Technische Details V8P22HM3/H Vishay General Semiconductor
Description: DIODE SCHOTTKY 200V 2.9A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 440pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.9A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote V8P22HM3/H nach Preis ab 1.44 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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V8P22HM3/H | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 200V 2.9A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 440pF @ 4V, 1MHz Current - Average Rectified (Io): 2.9A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| V8P22HM3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.9A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.9A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 15+ | 1.44 EUR |