Foto | Bezeichnung | Hersteller | Beschreibung |
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CRCW080522K0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 22kΩ; 0.125W; ±1%; CRCW0805 Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 22kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Manufacturer series: CRCW0805 Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120651R0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 51Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 51Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 19700 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120691R0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 91Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 91Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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MMA02040C3307JB300 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0204 MiniMELF; 330mΩ; 0.4W; ±5%; 50ppm/°C Type of resistor: thin film Mounting: SMD Resistance: 0.33Ω Power: 0.4W Tolerance: ±5% Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Case: 0204 MiniMELF Body dimensions: Ø1.5x3.6mm Max. operating voltage: 200V |
auf Bestellung 3225 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL213660222E3 | VISHAY |
![]() ![]() Description: Capacitor: electrolytic; low ESR; THT; 2200uF; 35VDC; Ø16x35mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 35V DC Body dimensions: Ø16x35mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Lead length: 5mm Kind of capacitor: low ESR Impedance: 22mΩ |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW080547R0FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; -55÷155°C Tolerance: ±1% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 47Ω |
auf Bestellung 5639 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW080547R0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; CRCW0805 Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 47Ω Power: 0.125W Tolerance: ±1% Manufacturer series: CRCW0805 Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 27300 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW080547R0JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±5%; CRCW0805 Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 47Ω Power: 0.125W Tolerance: ±5% Manufacturer series: CRCW0805 Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3502-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A Case: GBPC Kind of package: bulk Electrical mounting: THT Version: square Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Leads: connectors FASTON Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE120A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
auf Bestellung 512 Stücke: Lieferzeit 14-21 Tag (e) |
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BA159-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 20A; DO41; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO41 Reverse recovery time: 0.5µs Max. forward impulse current: 20A Kind of package: 13 inch reel Quantity in set/package: 5500pcs. Max. forward voltage: 1.3V |
auf Bestellung 6605 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ14PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7414DN-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 5.6A; Idm: 30A Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 5.6A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
VS-8EWF02S-M3 | VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 150A Leakage current: 3mA Kind of package: tube Type of diode: rectifying Quantity in set/package: 75pcs. Features of semiconductor devices: fast switching; glass passivated Mounting: SMD Case: DPAK Max. off-state voltage: 200V Max. forward voltage: 1.2V Load current: 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DF10M-E3/45 | VISHAY |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM Electrical mounting: THT Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Load current: 1A Max. forward impulse current: 50A Case: DFM Kind of package: tube |
auf Bestellung 1591 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV21-TAP | VISHAY |
![]() Description: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns Type of diode: switching Mounting: THT Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Kind of package: Ammo Pack Max. forward impulse current: 1A Case: DO35 Max. forward voltage: 1V Max. load current: 0.625A Reverse recovery time: 50ns |
auf Bestellung 5384 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2020BZER2R2M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm Type of inductor: wire Mounting: SMD Inductance: 2.2µH Operating current: 4.2A Resistance: 45.6mΩ Tolerance: ±20% Manufacturer series: IHLP Body dimensions: 5.18x5.18x2mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2020BZERR22M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.22uH; 15A; 4.9mΩ; ±20%; IHLP; 5.18x5.18x2mm Type of inductor: wire Mounting: SMD Inductance: 0.22µH Operating current: 15A Resistance: 4.9mΩ Tolerance: ±20% Manufacturer series: IHLP Body dimensions: 5.18x5.18x2mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF644PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Mounting: THT Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Case: TO220AB Drain-source voltage: 250V Drain current: 8.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF644SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Case: D2PAK; TO263 Drain-source voltage: 250V Drain current: 8.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4840 | VISHAY |
![]() Description: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: THT Supply voltage: 4.5...5.5V Viewing angle: 45° Connector variant: straight |
auf Bestellung 645 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4463BDY-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4463BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MAL213666102E3 | VISHAY |
![]() ![]() Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 25VDC; Ø12.5x25mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 25V DC Body dimensions: Ø12.5x25mm Terminal pitch: 5mm Tolerance: ±20% Service life: 10000h Impedance: 34mΩ Operating temperature: -55...105°C Lead length: 5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BPW77NB | VISHAY |
![]() Description: Phototransistor; THT; 850nm; 70V; 20°; Lens: transparent Type of photoelement: phototransistor Mounting: THT Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 20° LED lens: transparent |
auf Bestellung 1321 Stücke: Lieferzeit 14-21 Tag (e) |
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BPW85 | VISHAY |
![]() Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50° Type of photoelement: phototransistor Mounting: THT LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BPW85B | VISHAY |
![]() Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50° Type of photoelement: phototransistor Mounting: THT LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
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BPW85C | VISHAY |
![]() Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50° Type of photoelement: phototransistor Mounting: THT LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent |
auf Bestellung 4525 Stücke: Lieferzeit 14-21 Tag (e) |
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BPW96C | VISHAY |
![]() Description: Phototransistor; THT; 5mm; λp max: 850nm; 70V; 20° Type of photoelement: phototransistor Mounting: THT LED diameter: 5mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 20° LED lens: transparent |
auf Bestellung 5034 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C5V1-E3-08 | VISHAY |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C Quantity in set/package: 3000pcs. |
auf Bestellung 1508 Stücke: Lieferzeit 14-21 Tag (e) |
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TLMY1000-GS15 | VISHAY |
![]() Description: LED; yellow; SMD; 0603; 3.55÷7.5mcd; 1.8÷2.6VDC; 1.6x0.8x0.6mm; 80° Mounting: SMD Case: 0603 Operating voltage: 1.8...2.6V DC LED colour: yellow Wavelength: 580...595nm Luminosity: 3.55...7.5mcd LED current: 2mA Viewing angle: 80° Dimensions: 1.6x0.8x0.6mm Front: flat Type of diode: LED |
auf Bestellung 4004 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2B-E3/52T | VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; DO214AA,SMB; Ifsm: 50A; 750pcs. Case: DO214AA; SMB Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: 7 inch reel Type of diode: rectifying Quantity in set/package: 750pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2B-E3/5BT | VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 13 inch reel Type of diode: rectifying Quantity in set/package: 3200pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ES2B-M3/52T | VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 7 inch reel Type of diode: rectifying Quantity in set/package: 750pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ES2B-M3/5BT | VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 13 inch reel Type of diode: rectifying Quantity in set/package: 3200pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ES2BHE3_A/I | VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 13 inch reel Type of diode: rectifying Quantity in set/package: 3200pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DF04S-E3/45 | VISHAY |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.4kV Load current: 1A Case: DFS Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: tube Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
auf Bestellung 3138 Stücke: Lieferzeit 14-21 Tag (e) |
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DF04S-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.4kV Load current: 1A Case: DFS Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S-E3/45 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 2776 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 1146 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW040230K0FKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 62.5mW Resistance: 30kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 50V Case - mm: 1005 Case - inch: 0402 Mounting: SMD |
auf Bestellung 11400 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW251230K0FKTHBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; CRCW2512; -55÷155°C Type of resistor: thick film Power: 1W Resistance: 30kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V Manufacturer series: CRCW2512 Case - mm: 6332 Case - inch: 2512 Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
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M24S4FF1000T30 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 100Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 13500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU014PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 2648 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU110PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: tube Pulsed drain current: 17A |
auf Bestellung 663 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C7V5-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 22070 Stücke: Lieferzeit 14-21 Tag (e) |
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593D227X9010D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ Mounting: SMD Operating temperature: -55...125°C Case: D Tolerance: ±10% Type of capacitor: tantalum Capacitance: 220µF Operating voltage: 10V DC ESR value: 125mΩ Manufacturer series: Tantamount Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 |
auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ30A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Leakage current: 1µA Features of semiconductor devices: glass passivated Technology: TransZorb® |
auf Bestellung 4612 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHA15N60E-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHF15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SIHG15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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293D475X9035B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
auf Bestellung 1805 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9035C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 6032 Case - inch: 2312 Case: C |
auf Bestellung 1138 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9035D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C56-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 56V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 13909 Stücke: Lieferzeit 14-21 Tag (e) |
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TLLR5400 | VISHAY |
![]() Description: LED; red; 5mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC Type of diode: LED LED colour: red LED diameter: 5mm Luminosity: 0.63...1.2mcd Viewing angle: 25° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Operating voltage: 1.9...2.4V DC Number of terminals: 2 Terminal pitch: 2.54mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLLR5401 | VISHAY |
![]() ![]() Description: LED; red; 5mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2 Mounting: THT Operating voltage: 1.9...2.4V DC Number of terminals: 2 LED diameter: 5mm LED colour: red Wavelength: 612...625nm LED lens: diffused; red Luminosity: 1...2mcd LED current: 2mA Viewing angle: 50° Front: convex Type of diode: LED Terminal pitch: 2.54mm |
auf Bestellung 2959 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW080522K0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22kΩ; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22kΩ; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2200+ | 0.03 EUR |
6500+ | 0.01 EUR |
8200+ | 0.01 EUR |
15000+ | 0.00 EUR |
CRCW120651R0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 51Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 51Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 51Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 51Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 19700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.04 EUR |
3000+ | 0.03 EUR |
4600+ | 0.02 EUR |
9800+ | 0.01 EUR |
10800+ | 0.01 EUR |
CRCW120691R0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 91Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 91Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 91Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 91Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.04 EUR |
3000+ | 0.03 EUR |
4500+ | 0.02 EUR |
MMA02040C3307JB300 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 330mΩ; 0.4W; ±5%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 0.33Ω
Power: 0.4W
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Case: 0204 MiniMELF
Body dimensions: Ø1.5x3.6mm
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 330mΩ; 0.4W; ±5%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 0.33Ω
Power: 0.4W
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Case: 0204 MiniMELF
Body dimensions: Ø1.5x3.6mm
Max. operating voltage: 200V
auf Bestellung 3225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
455+ | 0.16 EUR |
629+ | 0.11 EUR |
717+ | 0.10 EUR |
811+ | 0.09 EUR |
951+ | 0.08 EUR |
1859+ | 0.04 EUR |
1961+ | 0.04 EUR |
MAL213660222E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 2200uF; 35VDC; Ø16x35mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 35V DC
Body dimensions: Ø16x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Lead length: 5mm
Kind of capacitor: low ESR
Impedance: 22mΩ
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 2200uF; 35VDC; Ø16x35mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 35V DC
Body dimensions: Ø16x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Lead length: 5mm
Kind of capacitor: low ESR
Impedance: 22mΩ
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.26 EUR |
31+ | 2.32 EUR |
33+ | 2.20 EUR |
CRCW080547R0FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 47Ω
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 47Ω
auf Bestellung 5639 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
2000+ | 0.04 EUR |
2660+ | 0.03 EUR |
3031+ | 0.02 EUR |
3572+ | 0.02 EUR |
4146+ | 0.02 EUR |
4874+ | 0.02 EUR |
5639+ | 0.01 EUR |
CRCW080547R0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 47Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 47Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 27300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2900+ | 0.03 EUR |
7700+ | 0.01 EUR |
9400+ | 0.01 EUR |
21700+ | 0.00 EUR |
22300+ | 0.00 EUR |
CRCW080547R0JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 47Ω
Power: 0.125W
Tolerance: ±5%
Manufacturer series: CRCW0805
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 47Ω; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 47Ω
Power: 0.125W
Tolerance: ±5%
Manufacturer series: CRCW0805
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2300+ | 0.03 EUR |
4500+ | 0.02 EUR |
5000+ | 0.01 EUR |
GBPC3502-E4/51 |
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Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Case: GBPC
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Leads: connectors FASTON
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Case: GBPC
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Leads: connectors FASTON
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.16 EUR |
24+ | 3.00 EUR |
26+ | 2.85 EUR |
1.5KE120A-E3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
125+ | 0.57 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
BA159-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 20A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
Max. forward impulse current: 20A
Kind of package: 13 inch reel
Quantity in set/package: 5500pcs.
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 20A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
Max. forward impulse current: 20A
Kind of package: 13 inch reel
Quantity in set/package: 5500pcs.
Max. forward voltage: 1.3V
auf Bestellung 6605 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
532+ | 0.13 EUR |
746+ | 0.10 EUR |
1200+ | 0.06 EUR |
1270+ | 0.06 EUR |
2500+ | 0.06 EUR |
5500+ | 0.05 EUR |
IRFZ14PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
69+ | 1.04 EUR |
86+ | 0.84 EUR |
154+ | 0.46 EUR |
163+ | 0.44 EUR |
SI7414DN-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 5.6A; Idm: 30A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 5.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 5.6A; Idm: 30A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 5.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VS-8EWF02S-M3 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
Type of diode: rectifying
Quantity in set/package: 75pcs.
Features of semiconductor devices: fast switching; glass passivated
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 1.2V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
Type of diode: rectifying
Quantity in set/package: 75pcs.
Features of semiconductor devices: fast switching; glass passivated
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 1.2V
Load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF10M-E3/45 | ![]() |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
auf Bestellung 1591 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
145+ | 0.50 EUR |
252+ | 0.28 EUR |
266+ | 0.27 EUR |
BAV21-TAP |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 5384 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
348+ | 0.21 EUR |
532+ | 0.13 EUR |
684+ | 0.10 EUR |
794+ | 0.09 EUR |
911+ | 0.08 EUR |
2416+ | 0.03 EUR |
2552+ | 0.03 EUR |
IHLP2020BZER2R2M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 2.2µH
Operating current: 4.2A
Resistance: 45.6mΩ
Tolerance: ±20%
Manufacturer series: IHLP
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 2.2µH
Operating current: 4.2A
Resistance: 45.6mΩ
Tolerance: ±20%
Manufacturer series: IHLP
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
74+ | 0.97 EUR |
75+ | 0.96 EUR |
IHLP2020BZERR22M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.22uH; 15A; 4.9mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 0.22µH
Operating current: 15A
Resistance: 4.9mΩ
Tolerance: ±20%
Manufacturer series: IHLP
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Category: Inductors
Description: Inductor: wire; SMD; 0.22uH; 15A; 4.9mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 0.22µH
Operating current: 15A
Resistance: 4.9mΩ
Tolerance: ±20%
Manufacturer series: IHLP
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF644PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: TO220AB
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: TO220AB
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
100+ | 0.72 EUR |
107+ | 0.67 EUR |
IRF644SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.35 EUR |
35+ | 2.10 EUR |
64+ | 1.13 EUR |
67+ | 1.07 EUR |
TSOP4840 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 645 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
76+ | 0.95 EUR |
90+ | 0.80 EUR |
163+ | 0.44 EUR |
172+ | 0.42 EUR |
SI4463BDY-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
SI4463BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAL213666102E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 25VDC; Ø12.5x25mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 25V DC
Body dimensions: Ø12.5x25mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 34mΩ
Operating temperature: -55...105°C
Lead length: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 25VDC; Ø12.5x25mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 25V DC
Body dimensions: Ø12.5x25mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 34mΩ
Operating temperature: -55...105°C
Lead length: 5mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BPW77NB |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; THT; 850nm; 70V; 20°; Lens: transparent
Type of photoelement: phototransistor
Mounting: THT
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; THT; 850nm; 70V; 20°; Lens: transparent
Type of photoelement: phototransistor
Mounting: THT
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.09 EUR |
30+ | 2.42 EUR |
32+ | 2.29 EUR |
500+ | 2.20 EUR |
BPW85 |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BPW85B |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
128+ | 0.56 EUR |
145+ | 0.49 EUR |
160+ | 0.45 EUR |
274+ | 0.26 EUR |
290+ | 0.25 EUR |
BPW85C |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
auf Bestellung 4525 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
117+ | 0.61 EUR |
140+ | 0.51 EUR |
160+ | 0.45 EUR |
283+ | 0.25 EUR |
298+ | 0.24 EUR |
BPW96C |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 850nm; 70V; 20°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 5mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 850nm; 70V; 20°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 5mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
auf Bestellung 5034 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
103+ | 0.70 EUR |
118+ | 0.61 EUR |
134+ | 0.53 EUR |
239+ | 0.30 EUR |
253+ | 0.28 EUR |
BZT52C5V1-E3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
auf Bestellung 1508 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
232+ | 0.31 EUR |
329+ | 0.22 EUR |
438+ | 0.16 EUR |
640+ | 0.11 EUR |
1025+ | 0.07 EUR |
1508+ | 0.05 EUR |
TLMY1000-GS15 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 3.55÷7.5mcd; 1.8÷2.6VDC; 1.6x0.8x0.6mm; 80°
Mounting: SMD
Case: 0603
Operating voltage: 1.8...2.6V DC
LED colour: yellow
Wavelength: 580...595nm
Luminosity: 3.55...7.5mcd
LED current: 2mA
Viewing angle: 80°
Dimensions: 1.6x0.8x0.6mm
Front: flat
Type of diode: LED
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 3.55÷7.5mcd; 1.8÷2.6VDC; 1.6x0.8x0.6mm; 80°
Mounting: SMD
Case: 0603
Operating voltage: 1.8...2.6V DC
LED colour: yellow
Wavelength: 580...595nm
Luminosity: 3.55...7.5mcd
LED current: 2mA
Viewing angle: 80°
Dimensions: 1.6x0.8x0.6mm
Front: flat
Type of diode: LED
auf Bestellung 4004 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
111+ | 0.65 EUR |
194+ | 0.37 EUR |
309+ | 0.23 EUR |
794+ | 0.09 EUR |
834+ | 0.09 EUR |
ES2B-E3/52T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; DO214AA,SMB; Ifsm: 50A; 750pcs.
Case: DO214AA; SMB
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 750pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; DO214AA,SMB; Ifsm: 50A; 750pcs.
Case: DO214AA; SMB
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 750pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
234+ | 0.31 EUR |
315+ | 0.23 EUR |
360+ | 0.20 EUR |
667+ | 0.11 EUR |
695+ | 0.10 EUR |
ES2B-E3/5BT |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES2B-M3/52T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 750pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 750pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES2B-M3/5BT |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES2BHE3_A/I |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: 13 inch reel
Type of diode: rectifying
Quantity in set/package: 3200pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF04S-E3/45 | ![]() |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 3138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1.00 EUR |
121+ | 0.59 EUR |
137+ | 0.52 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
DF04S-E3/77 |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
DF08S-E3/45 |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2776 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
176+ | 0.41 EUR |
202+ | 0.35 EUR |
295+ | 0.24 EUR |
311+ | 0.23 EUR |
DF08S-E3/77 |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
138+ | 0.52 EUR |
304+ | 0.24 EUR |
323+ | 0.22 EUR |
CRCW040230K0FKTDBC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
auf Bestellung 11400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4200+ | 0.02 EUR |
9400+ | 0.01 EUR |
11400+ | 0.01 EUR |
CRCW251230K0FKTHBC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; CRCW2512; -55÷155°C
Type of resistor: thick film
Power: 1W
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Manufacturer series: CRCW2512
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; CRCW2512; -55÷155°C
Type of resistor: thick film
Power: 1W
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Manufacturer series: CRCW2512
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
560+ | 0.13 EUR |
940+ | 0.08 EUR |
1550+ | 0.05 EUR |
1640+ | 0.04 EUR |
M24S4FF1000T30 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 100Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 100Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
775+ | 0.09 EUR |
1375+ | 0.05 EUR |
2550+ | 0.03 EUR |
3525+ | 0.02 EUR |
3750+ | 0.02 EUR |
IRLU014PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.20 EUR |
115+ | 0.63 EUR |
127+ | 0.56 EUR |
166+ | 0.43 EUR |
176+ | 0.41 EUR |
IRLU024PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
IRLU110PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Pulsed drain current: 17A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Pulsed drain current: 17A
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
132+ | 0.54 EUR |
147+ | 0.49 EUR |
191+ | 0.37 EUR |
202+ | 0.35 EUR |
BZX55C7V5-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 22070 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
870+ | 0.08 EUR |
1710+ | 0.04 EUR |
2130+ | 0.03 EUR |
2360+ | 0.03 EUR |
2490+ | 0.03 EUR |
10000+ | 0.03 EUR |
593D227X9010D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 220µF
Operating voltage: 10V DC
ESR value: 125mΩ
Manufacturer series: Tantamount
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 220µF
Operating voltage: 10V DC
ESR value: 125mΩ
Manufacturer series: Tantamount
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
68+ | 1.06 EUR |
127+ | 0.56 EUR |
135+ | 0.53 EUR |
SMBJ30A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
auf Bestellung 4612 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
248+ | 0.29 EUR |
332+ | 0.22 EUR |
432+ | 0.17 EUR |
556+ | 0.13 EUR |
910+ | 0.08 EUR |
962+ | 0.07 EUR |
SIHA15N60E-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
SIHB15N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHF15N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHG15N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.72 EUR |
17+ | 4.23 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
SIHP15N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
293D475X9035B2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
auf Bestellung 1805 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
113+ | 0.64 EUR |
132+ | 0.54 EUR |
191+ | 0.37 EUR |
338+ | 0.21 EUR |
358+ | 0.20 EUR |
293D475X9035C2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
auf Bestellung 1138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
172+ | 0.42 EUR |
220+ | 0.33 EUR |
327+ | 0.22 EUR |
345+ | 0.21 EUR |
500+ | 0.20 EUR |
293D475X9035D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
160+ | 0.45 EUR |
196+ | 0.37 EUR |
256+ | 0.28 EUR |
271+ | 0.26 EUR |
BZX85C56-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 13909 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
782+ | 0.09 EUR |
1073+ | 0.07 EUR |
1226+ | 0.06 EUR |
1737+ | 0.04 EUR |
1832+ | 0.04 EUR |
10000+ | 0.04 EUR |
TLLR5400 |
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Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 5mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 5mm
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 5mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 5mm
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
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TLLR5401 |
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Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 5mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Mounting: THT
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
LED diameter: 5mm
LED colour: red
Wavelength: 612...625nm
LED lens: diffused; red
Luminosity: 1...2mcd
LED current: 2mA
Viewing angle: 50°
Front: convex
Type of diode: LED
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 5mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Mounting: THT
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
LED diameter: 5mm
LED colour: red
Wavelength: 612...625nm
LED lens: diffused; red
Luminosity: 1...2mcd
LED current: 2mA
Viewing angle: 50°
Front: convex
Type of diode: LED
Terminal pitch: 2.54mm
auf Bestellung 2959 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
230+ | 0.31 EUR |
304+ | 0.24 EUR |
353+ | 0.20 EUR |
404+ | 0.18 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |