| Foto | Bezeichnung | Hersteller | Beschreibung |
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293D336X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2312 Case - mm: 6032 Case: C Manufacturer series: Tantamount |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 1045 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
auf Bestellung 13820 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CRCW040210K0FKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 580300 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR120TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.27Ω Gate charge: 12nC Gate-source voltage: ±10V |
auf Bestellung 1134 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL219826681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 400V DC Terminal pitch: 10mm Tolerance: ±20% Operating temperature: -40...85°C Diameter: 35mm Body dimensions: Ø35x60mm Height: 60mm Service life: 15000h |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHD180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHG080N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHG180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHH080N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHH180N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHP180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MAL219866151E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 150µF Operating voltage: 400V DC Body dimensions: Ø22x40mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C Height: 40mm Diameter: 22mm Terminal pitch: 10mm |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Technology: TransZorb® Leakage current: 0.8mA Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Tolerance: ±5% |
auf Bestellung 16380 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0D-M3/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 511 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233840105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±20% Mounting: THT Body dimensions: 26x12x22mm Operating voltage: 300V AC; 630V DC |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233910105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±10% Mounting: THT Body dimensions: 26x12x22mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233921105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 27.5mm Tolerance: ±20% Mounting: THT Body dimensions: 31x11x21mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233926105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±20% Mounting: THT Body dimensions: 26x10x19.5mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6206-3X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAT85S-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: Ammo Pack |
auf Bestellung 8247 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT85S-TR | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Case: DO35 Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: 14 inch reel Features of semiconductor devices: small signal |
auf Bestellung 2851 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL213651222E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Diameter: 18mm Body dimensions: Ø18x35mm Height: 35mm Terminal pitch: 7.5mm |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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ZRC00KL2221H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 18x35.5mm |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB12N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHF12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHP12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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293D226X9010A2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
auf Bestellung 8051 Stücke: Lieferzeit 14-21 Tag (e) |
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293D226X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
auf Bestellung 3873 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9520PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF9520SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF9520STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTCLE100E3474JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW Resistance: 470kΩ Power: 0.5W Type of sensor: NTC thermistor Mounting: THT Operating temperature: -40...125°C Material constant B: 4570K |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY70 | VISHAY |
Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Kind of optocoupler: reflective Kind of output: transistor Collector-emitter voltage: 32V |
auf Bestellung 3042 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE36A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE36CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 707 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate-source voltage: ±10V Kind of package: tube Gate charge: 66nC On-state resistance: 28mΩ |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08054R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 14162 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08054R70FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 Mounting: SMD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12064R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...125°C Mounting: SMD |
auf Bestellung 7979 Stücke: Lieferzeit 14-21 Tag (e) |
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P16NP105MAB15 | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered Resistance: 1MΩ Power: 1W Tolerance: ±20% Temperature coefficient: 150ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Mounting: soldered Operating temperature: -40...85°C Panel cutout diameter: 10mm Knob dimensions: Ø16x8mm Electrical rotation angle: 270° Leads: solder lugs Track material: cermet Potentiometer features: for industrial use; with knob Kind of potentiometer: single turn |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2374 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB8N50D-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHF8N50D-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SIHP8N50D-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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293D106X9063E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Operating temperature: -55...125°C Capacitance: 10µF Operating voltage: 63V DC Mounting: SMD Tolerance: ±10% Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BFC236855474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT Mounting: THT Type of capacitor: polyester Operating temperature: -55...85°C Capacitance: 0.47µF Lead length: 0.8mm Terminal pitch: 22.5mm Body dimensions: 8x20x26mm Tolerance: ±10% Operating voltage: 220V AC; 400V DC |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DJ-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Number of channels: 1 Case: DIP16 Supply voltage: 5...20V; 5...36V Mounting: THT Kind of package: tube Resistance: 100Ω Output configuration: 8:1 |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DQ-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Resistance: 100Ω Output configuration: 8:1 Application: automotive industry |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DY-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: tube Resistance: 100Ω Output configuration: 8:1 |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DY-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Resistance: 100Ω Output configuration: 8:1 |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT46-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW Type of diode: Schottky switching Max. off-state voltage: 100V Max. forward impulse current: 0.75A Semiconductor structure: single diode Case: DO35 Mounting: THT Leakage current: 20µA Kind of package: 14 inch reel Max. forward voltage: 1V Load current: 0.15A Capacitance: 10pF Features of semiconductor devices: small signal Power dissipation: 0.15W |
auf Bestellung 3995 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT46W-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel Type of diode: Schottky switching Max. off-state voltage: 100V Max. forward impulse current: 0.75A Semiconductor structure: single diode Case: SOD123 Mounting: SMD Kind of package: 7 inch reel Max. forward voltage: 0.25V Max. load current: 0.35A Load current: 0.1A Capacitance: 6pF Features of semiconductor devices: small signal Power dissipation: 0.15W Quantity in set/package: 3000pcs. |
auf Bestellung 7396 Stücke: Lieferzeit 14-21 Tag (e) |
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| 293D336X9016C2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 140+ | 0.51 EUR |
| 293D336X9016D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 202+ | 0.35 EUR |
| 247+ | 0.29 EUR |
| 268+ | 0.27 EUR |
| 500+ | 0.23 EUR |
| 293D336X9020D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 148+ | 0.48 EUR |
| 184+ | 0.39 EUR |
| 293D336X9025D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| BAW56-E3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 13820 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 834+ | 0.086 EUR |
| 1327+ | 0.054 EUR |
| 1755+ | 0.041 EUR |
| 1946+ | 0.037 EUR |
| 3000+ | 0.032 EUR |
| 6000+ | 0.03 EUR |
| 12000+ | 0.028 EUR |
| BAW56-G3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW040210K0FKTDBC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 580300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7300+ | 0.0099 EUR |
| 26800+ | 0.0027 EUR |
| 61000+ | 0.0012 EUR |
| 89300+ | 0.0008 EUR |
| 92600+ | 0.00077 EUR |
| 94400+ | 0.00076 EUR |
| 100000+ | 0.00073 EUR |
| 200000+ | 0.00072 EUR |
| IRLR120TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.27Ω
Gate charge: 12nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.27Ω
Gate charge: 12nC
Gate-source voltage: ±10V
auf Bestellung 1134 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 134+ | 0.53 EUR |
| 152+ | 0.47 EUR |
| 169+ | 0.42 EUR |
| 500+ | 0.41 EUR |
| MAL219826681E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...85°C
Diameter: 35mm
Body dimensions: Ø35x60mm
Height: 60mm
Service life: 15000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...85°C
Diameter: 35mm
Body dimensions: Ø35x60mm
Height: 60mm
Service life: 15000h
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| SIHA180N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB180N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHD180N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG080N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG180N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH080N60E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH180N60E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP180N60E-GE3 |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAL219866151E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 22mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 22mm
Terminal pitch: 10mm
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.08 EUR |
| 10+ | 8.02 EUR |
| SMBJ5.0A-E3/52 | ![]() |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Tolerance: ±5%
auf Bestellung 16380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 309+ | 0.23 EUR |
| 506+ | 0.14 EUR |
| 631+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 892+ | 0.08 EUR |
| 993+ | 0.072 EUR |
| 1500+ | 0.069 EUR |
| SMBJ5.0A-E3/5B |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 272+ | 0.26 EUR |
| 321+ | 0.22 EUR |
| 429+ | 0.17 EUR |
| 711+ | 0.1 EUR |
| 910+ | 0.079 EUR |
| SMBJ5.0D-M3/H |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 345+ | 0.21 EUR |
| 496+ | 0.14 EUR |
| BFC233840105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.93 EUR |
| 8+ | 9.4 EUR |
| 10+ | 8.55 EUR |
| 25+ | 7.56 EUR |
| 50+ | 6.94 EUR |
| 100+ | 6.46 EUR |
| 150+ | 6.35 EUR |
| BFC233910105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 151+ | 0.47 EUR |
| 157+ | 0.46 EUR |
| 164+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| 175+ | 0.41 EUR |
| BFC233921105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 27.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 27.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 100+ | 0.72 EUR |
| 122+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| 147+ | 0.49 EUR |
| BFC233926105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| SFH6206-3X001T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT85S-TAP |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
auf Bestellung 8247 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 918+ | 0.078 EUR |
| 1166+ | 0.061 EUR |
| 1289+ | 0.055 EUR |
| 2000+ | 0.05 EUR |
| BAT85S-TR |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 350+ | 0.2 EUR |
| 673+ | 0.11 EUR |
| 1005+ | 0.071 EUR |
| 1150+ | 0.062 EUR |
| 2000+ | 0.055 EUR |
| MAL213651222E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Diameter: 18mm
Body dimensions: Ø18x35mm
Height: 35mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Diameter: 18mm
Body dimensions: Ø18x35mm
Height: 35mm
Terminal pitch: 7.5mm
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.8 EUR |
| 100+ | 3.02 EUR |
| 200+ | 2.8 EUR |
| ZRC00KL2221H00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 34+ | 2.12 EUR |
| 50+ | 1.57 EUR |
| 100+ | 1.33 EUR |
| SIHB12N65E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF12N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP12N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 293D226X9010A2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 8051 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 321+ | 0.22 EUR |
| 432+ | 0.17 EUR |
| 477+ | 0.15 EUR |
| 538+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 293D226X9010B2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
auf Bestellung 3873 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 394+ | 0.18 EUR |
| 496+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| IRF9520PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9520SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9520STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTCLE100E3474JB0 |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 4570K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 4570K
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 165+ | 0.43 EUR |
| 174+ | 0.41 EUR |
| 300+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.34 EUR |
| CNY70 |
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Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
auf Bestellung 3042 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 128+ | 0.56 EUR |
| 129+ | 0.55 EUR |
| 1.5KE36A-E3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 152+ | 0.47 EUR |
| 169+ | 0.42 EUR |
| 179+ | 0.4 EUR |
| 500+ | 0.34 EUR |
| 1.5KE36CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 707 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 144+ | 0.5 EUR |
| 174+ | 0.41 EUR |
| 192+ | 0.37 EUR |
| 213+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| IRLZ44PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 47+ | 1.53 EUR |
| 53+ | 1.37 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.23 EUR |
| CRCW08054R70FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 14162 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1613+ | 0.044 EUR |
| 2315+ | 0.031 EUR |
| 2718+ | 0.026 EUR |
| 3788+ | 0.019 EUR |
| 4274+ | 0.017 EUR |
| 4951+ | 0.014 EUR |
| 5320+ | 0.013 EUR |
| CRCW08054R70FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 700+ | 0.11 EUR |
| 1500+ | 0.049 EUR |
| 1900+ | 0.038 EUR |
| CRCW12064R70FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Mounting: SMD
auf Bestellung 7979 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1429+ | 0.05 EUR |
| 2618+ | 0.027 EUR |
| 3572+ | 0.02 EUR |
| 3969+ | 0.018 EUR |
| 4465+ | 0.016 EUR |
| P16NP105MAB15 |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 22.89 EUR |
| SI2302CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 172+ | 0.42 EUR |
| 218+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| SI2302DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2374 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 211+ | 0.34 EUR |
| 237+ | 0.3 EUR |
| 296+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| SIHB8N50D-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF8N50D-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP8N50D-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 293D106X9063E2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Mounting: SMD
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Mounting: SMD
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFC236855474 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.87 EUR |
| 50+ | 1.5 EUR |
| 100+ | 1.39 EUR |
| 250+ | 1.26 EUR |
| DG408DJ-E3 | ![]() |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: DIP16
Supply voltage: 5...20V; 5...36V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: DIP16
Supply voltage: 5...20V; 5...36V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 125+ | 2.22 EUR |
| DG408DQ-T1-E3 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Application: automotive industry
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 38+ | 1.9 EUR |
| 100+ | 1.76 EUR |
| 250+ | 1.69 EUR |
| 500+ | 1.53 EUR |
| DG408DY-E3 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.1 EUR |
| 35+ | 2.09 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.69 EUR |
| 100+ | 1.54 EUR |
| DG408DY-T1-E3 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 42+ | 1.73 EUR |
| 45+ | 1.6 EUR |
| 50+ | 1.52 EUR |
| 100+ | 1.44 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.16 EUR |
| BAT46-TAP |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward impulse current: 0.75A
Semiconductor structure: single diode
Case: DO35
Mounting: THT
Leakage current: 20µA
Kind of package: 14 inch reel
Max. forward voltage: 1V
Load current: 0.15A
Capacitance: 10pF
Features of semiconductor devices: small signal
Power dissipation: 0.15W
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward impulse current: 0.75A
Semiconductor structure: single diode
Case: DO35
Mounting: THT
Leakage current: 20µA
Kind of package: 14 inch reel
Max. forward voltage: 1V
Load current: 0.15A
Capacitance: 10pF
Features of semiconductor devices: small signal
Power dissipation: 0.15W
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 995+ | 0.072 EUR |
| 1100+ | 0.065 EUR |
| 1245+ | 0.058 EUR |
| 2500+ | 0.053 EUR |
| BAT46W-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward impulse current: 0.75A
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.25V
Max. load current: 0.35A
Load current: 0.1A
Capacitance: 6pF
Features of semiconductor devices: small signal
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward impulse current: 0.75A
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.25V
Max. load current: 0.35A
Load current: 0.1A
Capacitance: 6pF
Features of semiconductor devices: small signal
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
auf Bestellung 7396 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 358+ | 0.2 EUR |
| 394+ | 0.18 EUR |
| 613+ | 0.12 EUR |
| 863+ | 0.083 EUR |
| 1003+ | 0.071 EUR |
| 3000+ | 0.061 EUR |
































