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SMBJ18CA-E3/52 SMBJ18CA-E3/52 VISHAY smbjA-CA_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷22.1V; 20.5A; bidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Tolerance: ±5%
auf Bestellung 2326 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
253+0.28 EUR
304+0.24 EUR
506+0.14 EUR
610+0.12 EUR
750+0.11 EUR
Mindestbestellmenge: 179
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1N5408-E3/54 1N5408-E3/54 VISHAY 1n5400_08.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 2778 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
156+0.46 EUR
215+0.33 EUR
249+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
1400+0.18 EUR
Mindestbestellmenge: 114
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2W10G-E4/51 2W10G-E4/51 VISHAY 2w005g.pdf Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
Electrical mounting: THT
Case: WOG
auf Bestellung 1315 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
99+0.73 EUR
122+0.59 EUR
162+0.44 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 63
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MAL214699111E3 MAL214699111E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB2BDF60CDE5640D2&compId=146cti.pdf?ci_sign=7361e4311647f31dd691c7d65b20961bca06ac21 Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
19+3.92 EUR
21+3.47 EUR
25+2.87 EUR
40+2.82 EUR
Mindestbestellmenge: 16
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MAL204831102E3 MAL204831102E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96824E7EB6A8C0CE&compId=048rml.pdf?ci_sign=c9eb3f4591df59e3ba5613458ae5164bdba13e28 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Manufacturer series: MAL2048
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.36 EUR
28+2.6 EUR
50+2.1 EUR
100+1.93 EUR
Mindestbestellmenge: 22
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MAL204861102E3 MAL204861102E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96824E7EB6A8C0CE&compId=048rml.pdf?ci_sign=c9eb3f4591df59e3ba5613458ae5164bdba13e28 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
29+2.49 EUR
50+2.09 EUR
100+1.77 EUR
250+1.7 EUR
Mindestbestellmenge: 19
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GRC00JE1021H00L GRC00JE1021H00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
93+0.77 EUR
Mindestbestellmenge: 49
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MAL215031102E3 MAL215031102E3 VISHAY 150rmi.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
25+2.87 EUR
50+2.33 EUR
100+2.1 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
ZRC00JG1021H00L ZRC00JG1021H00L VISHAY ZRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
78+0.93 EUR
99+0.72 EUR
Mindestbestellmenge: 49
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SI7852DP-T1-GE3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS26-E3/52T SS26-E3/52T VISHAY SS24-E3-52T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Kind of package: 7 inch reel
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 10001 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
222+0.32 EUR
309+0.23 EUR
363+0.2 EUR
455+0.16 EUR
544+0.13 EUR
750+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 173
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SS26HE3_A/H SS26HE3_A/H VISHAY ss22.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Kind of package: 7 inch reel
Application: automotive industry
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
129+0.56 EUR
145+0.49 EUR
177+0.4 EUR
215+0.33 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
SS26S-E3/5AT SS26S-E3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Kind of package: 13 inch reel
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SS26S-E3/61T SS26S-E3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Kind of package: 7 inch reel
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
296+0.24 EUR
334+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
SISS26DN-T1-GE3 VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 VISHAY siss26ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600 VISHAY TSSS2600.pdf Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 6065 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
168+0.43 EUR
187+0.38 EUR
205+0.35 EUR
223+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
53+1.37 EUR
100+1.32 EUR
250+1.22 EUR
Mindestbestellmenge: 48
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
47+1.54 EUR
53+1.37 EUR
57+1.27 EUR
100+1.19 EUR
250+1.1 EUR
500+1.07 EUR
Mindestbestellmenge: 31
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IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
52+1.4 EUR
56+1.29 EUR
68+1.06 EUR
100+1 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
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1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
159+0.45 EUR
189+0.38 EUR
500+0.34 EUR
Mindestbestellmenge: 129
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
290+0.25 EUR
350+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 200
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BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 1385 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
148+0.49 EUR
161+0.44 EUR
202+0.35 EUR
223+0.32 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 125
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BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
204+0.35 EUR
221+0.32 EUR
246+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C27-TAP BZX85C27-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 11354 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
455+0.16 EUR
538+0.13 EUR
815+0.088 EUR
966+0.074 EUR
1169+0.061 EUR
1309+0.055 EUR
1374+0.052 EUR
Mindestbestellmenge: 358
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1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
171+0.42 EUR
193+0.37 EUR
250+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 157
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IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
38+1.89 EUR
52+1.4 EUR
Mindestbestellmenge: 29
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IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Produkt ist nicht verfügbar
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IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
39+1.84 EUR
46+1.56 EUR
55+1.3 EUR
100+1.1 EUR
500+1.03 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
54+1.33 EUR
60+1.2 EUR
61+1.19 EUR
100+1.1 EUR
150+1.07 EUR
200+1.04 EUR
250+1.02 EUR
500+0.94 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
43+1.69 EUR
50+1.56 EUR
250+1.44 EUR
Mindestbestellmenge: 36
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IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
136+0.53 EUR
147+0.49 EUR
157+0.46 EUR
168+0.43 EUR
Mindestbestellmenge: 122
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1.5KE180A-E3/54 1.5KE180A-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
137+0.52 EUR
178+0.4 EUR
250+0.36 EUR
500+0.34 EUR
1400+0.31 EUR
Mindestbestellmenge: 114
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1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
123+0.58 EUR
154+0.46 EUR
500+0.39 EUR
1000+0.36 EUR
1400+0.35 EUR
Mindestbestellmenge: 93
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1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
146+0.49 EUR
175+0.41 EUR
190+0.38 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.3 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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1N4937-E3/54 1N4937-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
618+0.12 EUR
680+0.11 EUR
792+0.09 EUR
968+0.074 EUR
1064+0.067 EUR
2000+0.06 EUR
2500+0.058 EUR
Mindestbestellmenge: 500
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1N4937-E3/73 1N4937-E3/73 VISHAY 1n4933.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2758 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SB160-E3/54 SB160-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BBAD4A21F825C143&compId=sb110_ser.pdf?ci_sign=d834ab0ea5f85951bf9e0b991825f03ee59e397b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
auf Bestellung 6562 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
428+0.17 EUR
468+0.15 EUR
538+0.13 EUR
658+0.11 EUR
1000+0.097 EUR
2500+0.094 EUR
Mindestbestellmenge: 358
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IRLL110TRPBF IRLL110TRPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BFCAABFDBA469&compId=IRLL110PBF.pdf?ci_sign=ea4ae21d58897bca7902ff68bd6b60d7e49bab3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
98+0.74 EUR
104+0.69 EUR
250+0.62 EUR
500+0.57 EUR
Mindestbestellmenge: 84
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BZX55C3V6-TAP BZX55C3V6-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7561 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
848+0.084 EUR
1471+0.049 EUR
2326+0.031 EUR
Mindestbestellmenge: 500
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BZX85C3V6-TAP BZX85C3V6-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
550+0.13 EUR
1110+0.065 EUR
1240+0.058 EUR
1380+0.052 EUR
Mindestbestellmenge: 550
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1N5401-E3/54 1N5401-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BBE4B1BB419C8143&compId=1n5400_08.pdf?ci_sign=cf0a5773092091fe746c38bf047f240b5e11a226 Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
264+0.27 EUR
288+0.25 EUR
309+0.23 EUR
334+0.21 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 239
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1N5404-E3/54 1N5404-E3/54 VISHAY 1n5400_08.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Quantity in set/package: 1400pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Capacitance: 30pF
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: 13 inch reel
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
265+0.27 EUR
307+0.23 EUR
332+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 250
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1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
285+0.25 EUR
311+0.23 EUR
435+0.16 EUR
506+0.14 EUR
575+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7515 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
305+0.23 EUR
334+0.21 EUR
455+0.16 EUR
603+0.12 EUR
1000+0.1 EUR
2000+0.089 EUR
2500+0.086 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1N5819-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1608 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-E3-08
+1
 		BAV99-E3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 2516 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
705+0.1 EUR
788+0.091 EUR
1025+0.07 EUR
1363+0.052 EUR
1548+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 BAV99-HE3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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SI7850DP-T1-GE3 SI7850DP-T1-GE3 VISHAY 71625.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 2947 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
33+2.22 EUR
36+2 EUR
50+1.54 EUR
100+1.37 EUR
500+1.03 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/54 1N4007GP-E3/54 VISHAY 1n4001gp.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 12367 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
235+0.3 EUR
258+0.28 EUR
309+0.23 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 200
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P6KE15CA-E3/54 P6KE15CA-E3/54 VISHAY p6ke.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 4023 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
213+0.34 EUR
268+0.27 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 167
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IRF730PBF IRF730PBF VISHAY IRF730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
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SMBJ18CA-E3/52 smbjA-CA_ser.pdf
SMBJ18CA-E3/52
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷22.1V; 20.5A; bidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Tolerance: ±5%
auf Bestellung 2326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
253+0.28 EUR
304+0.24 EUR
506+0.14 EUR
610+0.12 EUR
750+0.11 EUR
Mindestbestellmenge: 179
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1N5408-E3/54 1n5400_08.pdf
1N5408-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 2778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
156+0.46 EUR
215+0.33 EUR
249+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
1400+0.18 EUR
Mindestbestellmenge: 114
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2W10G-E4/51 2w005g.pdf
2W10G-E4/51
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
Electrical mounting: THT
Case: WOG
auf Bestellung 1315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
99+0.73 EUR
122+0.59 EUR
162+0.44 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 63
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MAL214699111E3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB2BDF60CDE5640D2&compId=146cti.pdf?ci_sign=7361e4311647f31dd691c7d65b20961bca06ac21
MAL214699111E3
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
19+3.92 EUR
21+3.47 EUR
25+2.87 EUR
40+2.82 EUR
Mindestbestellmenge: 16
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MAL204831102E3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96824E7EB6A8C0CE&compId=048rml.pdf?ci_sign=c9eb3f4591df59e3ba5613458ae5164bdba13e28
MAL204831102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Manufacturer series: MAL2048
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
28+2.6 EUR
50+2.1 EUR
100+1.93 EUR
Mindestbestellmenge: 22
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MAL204861102E3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96824E7EB6A8C0CE&compId=048rml.pdf?ci_sign=c9eb3f4591df59e3ba5613458ae5164bdba13e28
MAL204861102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
29+2.49 EUR
50+2.09 EUR
100+1.77 EUR
250+1.7 EUR
Mindestbestellmenge: 19
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GRC00JE1021H00L GRC.pdf
GRC00JE1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
93+0.77 EUR
Mindestbestellmenge: 49
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MAL215031102E3 150rmi.pdf
MAL215031102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
25+2.87 EUR
50+2.33 EUR
100+2.1 EUR
Mindestbestellmenge: 18
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ZRC00JG1021H00L ZRC.pdf
ZRC00JG1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
78+0.93 EUR
99+0.72 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SI7852DP-T1-GE3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS26-E3/52T SS24-E3-52T.pdf
SS26-E3/52T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Kind of package: 7 inch reel
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 10001 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
222+0.32 EUR
309+0.23 EUR
363+0.2 EUR
455+0.16 EUR
544+0.13 EUR
750+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
SS26HE3_A/H ss22.pdf
SS26HE3_A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Kind of package: 7 inch reel
Application: automotive industry
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
129+0.56 EUR
145+0.49 EUR
177+0.4 EUR
215+0.33 EUR
Mindestbestellmenge: 109
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SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Kind of package: 13 inch reel
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Kind of package: 7 inch reel
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
296+0.24 EUR
334+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 228
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SISS26DN-T1-GE3 siss26dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 siss26ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600.pdf
TSSS2600
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 6065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
168+0.43 EUR
187+0.38 EUR
205+0.35 EUR
223+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 117
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IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
53+1.37 EUR
100+1.32 EUR
250+1.22 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
47+1.54 EUR
53+1.37 EUR
57+1.27 EUR
100+1.19 EUR
250+1.1 EUR
500+1.07 EUR
Mindestbestellmenge: 31
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IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
52+1.4 EUR
56+1.29 EUR
68+1.06 EUR
100+1 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
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1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
159+0.45 EUR
189+0.38 EUR
500+0.34 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
290+0.25 EUR
350+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 1385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
148+0.49 EUR
161+0.44 EUR
202+0.35 EUR
223+0.32 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
204+0.35 EUR
221+0.32 EUR
246+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C27-TAP BZX85C10-TAP.pdf
BZX85C27-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 11354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
455+0.16 EUR
538+0.13 EUR
815+0.088 EUR
966+0.074 EUR
1169+0.061 EUR
1309+0.055 EUR
1374+0.052 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
171+0.42 EUR
193+0.37 EUR
250+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
38+1.89 EUR
52+1.4 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
39+1.84 EUR
46+1.56 EUR
55+1.3 EUR
100+1.1 EUR
500+1.03 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
54+1.33 EUR
60+1.2 EUR
61+1.19 EUR
100+1.1 EUR
150+1.07 EUR
200+1.04 EUR
250+1.02 EUR
500+0.94 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
43+1.69 EUR
50+1.56 EUR
250+1.44 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
136+0.53 EUR
147+0.49 EUR
157+0.46 EUR
168+0.43 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180A-E3/54 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282
1.5KE180A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
137+0.52 EUR
178+0.4 EUR
250+0.36 EUR
500+0.34 EUR
1400+0.31 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
123+0.58 EUR
154+0.46 EUR
500+0.39 EUR
1000+0.36 EUR
1400+0.35 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
146+0.49 EUR
175+0.41 EUR
190+0.38 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.3 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/54 1n400x.pdf
1N4937-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
618+0.12 EUR
680+0.11 EUR
792+0.09 EUR
968+0.074 EUR
1064+0.067 EUR
2000+0.06 EUR
2500+0.058 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2758 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SB160-E3/54 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BBAD4A21F825C143&compId=sb110_ser.pdf?ci_sign=d834ab0ea5f85951bf9e0b991825f03ee59e397b
SB160-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
auf Bestellung 6562 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
428+0.17 EUR
468+0.15 EUR
538+0.13 EUR
658+0.11 EUR
1000+0.097 EUR
2500+0.094 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IRLL110TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BFCAABFDBA469&compId=IRLL110PBF.pdf?ci_sign=ea4ae21d58897bca7902ff68bd6b60d7e49bab3e
IRLL110TRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
98+0.74 EUR
104+0.69 EUR
250+0.62 EUR
500+0.57 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C3V6-TAP BZX55C10-TAP.pdf
BZX55C3V6-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
848+0.084 EUR
1471+0.049 EUR
2326+0.031 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C3V6-TAP BZX85C10-TAP.pdf
BZX85C3V6-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
550+0.13 EUR
1110+0.065 EUR
1240+0.058 EUR
1380+0.052 EUR
Mindestbestellmenge: 550
Im Einkaufswagen  Stück im Wert von  UAH
1N5401-E3/54 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BBE4B1BB419C8143&compId=1n5400_08.pdf?ci_sign=cf0a5773092091fe746c38bf047f240b5e11a226
1N5401-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
264+0.27 EUR
288+0.25 EUR
309+0.23 EUR
334+0.21 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
1N5404-E3/54 1n5400_08.pdf
1N5404-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Quantity in set/package: 1400pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Capacitance: 30pF
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: 13 inch reel
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
265+0.27 EUR
307+0.23 EUR
332+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
285+0.25 EUR
311+0.23 EUR
435+0.16 EUR
506+0.14 EUR
575+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
334+0.21 EUR
455+0.16 EUR
603+0.12 EUR
1000+0.1 EUR
2000+0.089 EUR
2500+0.086 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1n5817-19.pdf
1N5819-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-E3-08 bav99.pdf
BAV99-E3-08
+1
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 2516 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
705+0.1 EUR
788+0.091 EUR
1025+0.07 EUR
1363+0.052 EUR
1548+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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SI7850DP-T1-GE3 71625.pdf
SI7850DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 2947 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
33+2.22 EUR
36+2 EUR
50+1.54 EUR
100+1.37 EUR
500+1.03 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
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1N4007GP-E3/54 1n4001gp.pdf
1N4007GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 12367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
235+0.3 EUR
258+0.28 EUR
309+0.23 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
P6KE15CA-E3/54 p6ke.pdf
P6KE15CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 4023 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
213+0.34 EUR
268+0.27 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRF730PBF IRF730PBF.pdf
IRF730PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
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