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SSC53L-E3/57T SSC53L-E3/57T VISHAY SSC5X-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2143 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
120+ 0.6 EUR
139+ 0.52 EUR
157+ 0.46 EUR
167+ 0.43 EUR
Mindestbestellmenge: 70
SSC53L-E3/9AT SSC53L-E3/9AT VISHAY SSC5X-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3189 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
173+ 0.41 EUR
186+ 0.39 EUR
Mindestbestellmenge: 76
SSC54-E3/57T SSC54-E3/57T VISHAY SSC5X-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4498 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
120+ 0.6 EUR
136+ 0.53 EUR
156+ 0.46 EUR
165+ 0.43 EUR
Mindestbestellmenge: 76
SSC54-E3/9AT VISHAY ssc53l.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Case: SMC
Kind of package: reel; tape
Leakage current: 60mA
Max. forward impulse current: 175A
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
SSC54HE3-A/I VISHAY Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD08P06-155L-GE3 VISHAY sud08p06-155l-ge3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD09P10-195-BE3 VISHAY SUD09P10.pdf SUD09P10-195-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD09P10-195-GE3 VISHAY sud09p10.pdf SUD09P10-195-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD15N15-95-E3 SUD15N15-95-E3 VISHAY sud15n15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 15A; Idm: 25A; 62W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 15A
Pulsed drain current: 25A
Power dissipation: 62W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD19N20-90-E3 SUD19N20-90-E3 VISHAY SUD19N20-90.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 136W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD19P06-60-E3 VISHAY sud19p06.pdf SUD19P06-60-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD19P06-60-GE3 SUD19P06-60-GE3 VISHAY SUD19P06-60.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
24+ 2.97 EUR
65+ 1.1 EUR
Mindestbestellmenge: 9
SUD19P06-60L-E3 VISHAY sud19p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -19A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19A
Pulsed drain current: -30A
Power dissipation: 46W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD20N10-66L-GE3 VISHAY sud20n10-66l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD23N06-31-GE3 SUD23N06-31-GE3 VISHAY SUD23N06-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17.1A; 31.25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1969 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
93+ 0.77 EUR
106+ 0.68 EUR
117+ 0.61 EUR
124+ 0.58 EUR
500+ 0.57 EUR
Mindestbestellmenge: 63
SUD25N15-52-E3 SUD25N15-52-E3 VISHAY sud25n15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-BE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-E3 VISHAY sud35n10-26p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-GE3 VISHAY sud35n10-26p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD40151EL-GE3 VISHAY sud40151el.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -42A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -100A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD40N08-16-E3 VISHAY 71323.pdf SUD40N08-16-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SUD40N10-25-E3 SUD40N10-25-E3 VISHAY sud40n10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 70A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD50N03-06AP-E3 VISHAY 73540.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 100A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD50N04-8M8P-4GE3 SUD50N04-8M8P-4GE3 VISHAY sud50n04.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 100A; 30.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 100A
Power dissipation: 30.8W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2498 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
59+ 1.22 EUR
66+ 1.09 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 50
SUD50N06-09L-E3 SUD50N06-09L-E3 VISHAY SUD50N06-09L-E3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2441 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
49+ 1.49 EUR
51+ 1.42 EUR
Mindestbestellmenge: 33
SUD50P04-08-GE3 SUD50P04-08-GE3 VISHAY sud50p04-08.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 73.5W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 159nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.46 EUR
55+ 1.3 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
SUD50P04-09L-E3 SUD50P04-09L-E3 VISHAY sud50p04.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD50P06-15-GE3 SUD50P06-15-GE3 VISHAY sud50p06-15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 113W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
26+ 2.79 EUR
58+ 1.24 EUR
61+ 1.17 EUR
Mindestbestellmenge: 23
SUD50P06-15L-E3 SUD50P06-15L-E3 VISHAY sud50p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1582 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.16 EUR
27+ 2.72 EUR
48+ 1.5 EUR
51+ 1.42 EUR
Mindestbestellmenge: 23
SUD50P08-25L-E3 VISHAY sud50p08.pdf SUD50P08-25L-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD50P10-43L-E3 SUD50P10-43L-E3 VISHAY sud50p10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD50P10-43L-GE3 SUD50P10-43L-GE3 VISHAY sud50p10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD70090E-GE3 VISHAY sud70090e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Power dissipation: 125W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD80460E-GE3 VISHAY sud80460e.pdf SUD80460E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUD90330E-GE3 VISHAY sud90330e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUG80050E-GE3 VISHAY sug80050e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUG90090E-GE3 VISHAY sug90090e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 395W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 129nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM10250E-GE3 SUM10250E-GE3 VISHAY sum10250e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 36.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 57.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM110N10-09-E3 SUM110N10-09-E3 VISHAY sum110n1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 799 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.79 EUR
22+ 3.3 EUR
23+ 3.12 EUR
Mindestbestellmenge: 15
SUM110P04-04L-E3 VISHAY sum110p0.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM110P04-05-E3 SUM110P04-05-E3 VISHAY SUM110P04-05-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -33A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 280nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 775 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.99 EUR
17+ 4.36 EUR
18+ 4.12 EUR
800+ 3.99 EUR
Mindestbestellmenge: 12
SUM110P06-07L-E3 SUM110P06-07L-E3 VISHAY sum110p06-07l.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -110A; Idm: -240A; 375W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 345nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1627 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.45 EUR
18+ 4 EUR
26+ 2.79 EUR
28+ 2.65 EUR
Mindestbestellmenge: 17
SUM110P06-08L-E3 VISHAY 73045.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM110P08-11L-E3 SUM110P08-11L-E3 VISHAY sum110p08-11l.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -110A
Pulsed drain current: -120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 796 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.69 EUR
17+ 4.38 EUR
18+ 4.15 EUR
Mindestbestellmenge: 11
SUM40010EL-GE3 VISHAY sum40010el.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM40012EL-GE3 VISHAY sum40012el.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 150A
On-state resistance: 2.24mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM40014M-GE3 VISHAY sum40014m.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 200A; Idm: 400A
Case: TO263-7
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 1.36mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM45N25-58-E3 VISHAY sum45n25.pdf SUM45N25-58-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM50010E-GE3 VISHAY sum50010e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM50020E-GE3 VISHAY sum50020e.pdf SUM50020E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM50020EL-GE3 VISHAY sum50020el.pdf SUM50020EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM55P06-19L-E3 SUM55P06-19L-E3 VISHAY SUM55P06-19L-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -31A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -31A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1013 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
38+ 1.93 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 36
SUM60020E-GE3 VISHAY sum60020e.pdf SUM60020E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM60061EL-GE3 VISHAY sum60061el.pdf SUM60061EL-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUM60N10-17-E3 VISHAY 72070.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM65N20-30-E3 SUM65N20-30-E3 VISHAY SUM65N20-30.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM70030E-GE3 VISHAY sum70030e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 150A
On-state resistance: 3.48mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 214nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70030M-GE3 VISHAY sum70030m.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 150A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 214nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: TO263-7
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70040E-GE3 SUM70040E-GE3 VISHAY sum70040e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 76nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
SUM70040M-GE3 VISHAY sum70040m.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SSC53L-E3/57T SSC5X-DTE.pdf
SSC53L-E3/57T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2143 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
120+ 0.6 EUR
139+ 0.52 EUR
157+ 0.46 EUR
167+ 0.43 EUR
Mindestbestellmenge: 70
SSC53L-E3/9AT SSC5X-DTE.pdf
SSC53L-E3/9AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3189 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
173+ 0.41 EUR
186+ 0.39 EUR
Mindestbestellmenge: 76
SSC54-E3/57T SSC5X-DTE.pdf
SSC54-E3/57T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
120+ 0.6 EUR
136+ 0.53 EUR
156+ 0.46 EUR
165+ 0.43 EUR
Mindestbestellmenge: 76
SSC54-E3/9AT ssc53l.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Case: SMC
Kind of package: reel; tape
Leakage current: 60mA
Max. forward impulse current: 175A
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
SSC54HE3-A/I
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 175A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD08P06-155L-GE3 sud08p06-155l-ge3.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD09P10-195-BE3 SUD09P10.pdf
Hersteller: VISHAY
SUD09P10-195-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD09P10-195-GE3 sud09p10.pdf
Hersteller: VISHAY
SUD09P10-195-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD15N15-95-E3 sud15n15.pdf
SUD15N15-95-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 15A; Idm: 25A; 62W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 15A
Pulsed drain current: 25A
Power dissipation: 62W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD19N20-90-E3 SUD19N20-90.pdf
SUD19N20-90-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 136W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD19P06-60-E3 sud19p06.pdf
Hersteller: VISHAY
SUD19P06-60-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD19P06-60-GE3 SUD19P06-60.pdf
SUD19P06-60-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
24+ 2.97 EUR
65+ 1.1 EUR
Mindestbestellmenge: 9
SUD19P06-60L-E3 sud19p06.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -19A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19A
Pulsed drain current: -30A
Power dissipation: 46W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD20N10-66L-GE3 sud20n10-66l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD23N06-31-GE3 SUD23N06-DTE.pdf
SUD23N06-31-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17.1A; 31.25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1969 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
93+ 0.77 EUR
106+ 0.68 EUR
117+ 0.61 EUR
124+ 0.58 EUR
500+ 0.57 EUR
Mindestbestellmenge: 63
SUD25N15-52-E3 sud25n15.pdf
SUD25N15-52-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-BE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-E3 sud35n10-26p.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD35N10-26P-GE3 sud35n10-26p.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 40A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD40151EL-GE3 sud40151el.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -42A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -100A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD40N08-16-E3 71323.pdf
Hersteller: VISHAY
SUD40N08-16-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SUD40N10-25-E3 sud40n10.pdf
SUD40N10-25-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 70A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD50N03-06AP-E3 73540.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 100A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD50N04-8M8P-4GE3 sud50n04.pdf
SUD50N04-8M8P-4GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 100A; 30.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 100A
Power dissipation: 30.8W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
59+ 1.22 EUR
66+ 1.09 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 50
SUD50N06-09L-E3 SUD50N06-09L-E3.pdf
SUD50N06-09L-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2441 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
49+ 1.49 EUR
51+ 1.42 EUR
Mindestbestellmenge: 33
SUD50P04-08-GE3 sud50p04-08.pdf
SUD50P04-08-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 73.5W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 159nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
55+ 1.3 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
SUD50P04-09L-E3 sud50p04.pdf
SUD50P04-09L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD50P06-15-GE3 sud50p06-15.pdf
SUD50P06-15-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 113W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
26+ 2.79 EUR
58+ 1.24 EUR
61+ 1.17 EUR
Mindestbestellmenge: 23
SUD50P06-15L-E3 sud50p06.pdf
SUD50P06-15L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1582 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.16 EUR
27+ 2.72 EUR
48+ 1.5 EUR
51+ 1.42 EUR
Mindestbestellmenge: 23
SUD50P08-25L-E3 sud50p08.pdf
Hersteller: VISHAY
SUD50P08-25L-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SUD50P10-43L-E3 sud50p10.pdf
SUD50P10-43L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD50P10-43L-GE3 sud50p10.pdf
SUD50P10-43L-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUD70090E-GE3 sud70090e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Power dissipation: 125W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD80460E-GE3 sud80460e.pdf
Hersteller: VISHAY
SUD80460E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUD90330E-GE3 sud90330e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUG80050E-GE3 sug80050e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUG90090E-GE3 sug90090e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 395W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 129nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM10250E-GE3 sum10250e.pdf
SUM10250E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 36.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 57.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM110N10-09-E3 sum110n1.pdf
SUM110N10-09-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 799 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.79 EUR
22+ 3.3 EUR
23+ 3.12 EUR
Mindestbestellmenge: 15
SUM110P04-04L-E3 sum110p0.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM110P04-05-E3 SUM110P04-05-E3.pdf
SUM110P04-05-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -33A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 280nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 775 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+5.99 EUR
17+ 4.36 EUR
18+ 4.12 EUR
800+ 3.99 EUR
Mindestbestellmenge: 12
SUM110P06-07L-E3 sum110p06-07l.pdf
SUM110P06-07L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -110A; Idm: -240A; 375W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 345nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1627 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.45 EUR
18+ 4 EUR
26+ 2.79 EUR
28+ 2.65 EUR
Mindestbestellmenge: 17
SUM110P06-08L-E3 73045.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM110P08-11L-E3 sum110p08-11l.pdf
SUM110P08-11L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -110A
Pulsed drain current: -120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 796 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.69 EUR
17+ 4.38 EUR
18+ 4.15 EUR
Mindestbestellmenge: 11
SUM40010EL-GE3 sum40010el.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM40012EL-GE3 sum40012el.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 150A
On-state resistance: 2.24mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM40014M-GE3 sum40014m.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 200A; Idm: 400A
Case: TO263-7
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 1.36mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM45N25-58-E3 sum45n25.pdf
Hersteller: VISHAY
SUM45N25-58-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM50010E-GE3 sum50010e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM50020E-GE3 sum50020e.pdf
Hersteller: VISHAY
SUM50020E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM50020EL-GE3 sum50020el.pdf
Hersteller: VISHAY
SUM50020EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM55P06-19L-E3 SUM55P06-19L-E3.pdf
SUM55P06-19L-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -31A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -31A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1013 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
38+ 1.93 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 36
SUM60020E-GE3 sum60020e.pdf
Hersteller: VISHAY
SUM60020E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SUM60061EL-GE3 sum60061el.pdf
Hersteller: VISHAY
SUM60061EL-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SUM60N10-17-E3 72070.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM65N20-30-E3 SUM65N20-30.pdf
SUM65N20-30-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM70030E-GE3 sum70030e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 150A
On-state resistance: 3.48mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 214nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70030M-GE3 sum70030m.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 150A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 214nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: TO263-7
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70040E-GE3 sum70040e.pdf
SUM70040E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 76nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
SUM70040M-GE3 sum70040m.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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