Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI2312BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5A; Idm: 15A; 1.25W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 47mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2312BDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 15A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 31mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2312CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3057 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2314EDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2314EDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2315BDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; 1.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3A Power dissipation: 1.19W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3285 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2315BDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2730 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2316BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2316BDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 20A Power dissipation: 1.66W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2316DS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.3A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 0.45W Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2520 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2316DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 16A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2318CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4472 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2318DS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 3A Pulsed drain current: 16A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2318DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 2.4A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2540 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2319CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.4A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2319CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.5A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7128 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2319DDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.6A Pulsed drain current: -15A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1326 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2319DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.4A Pulsed drain current: -12A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3549 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2319DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1963 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2323CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2323CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 39mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2493 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2323DDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 68mΩ Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 13.6nC Drain current: -3.8A Drain-source voltage: -20V Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Power dissipation: 1.1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2986 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2323DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 68mΩ Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 19nC Drain current: -3.8A Drain-source voltage: -20V Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2413 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2323DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 68mΩ Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 19nC Drain current: -3.8A Drain-source voltage: -20V Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2625 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2324DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 234mΩ Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Drain current: 1.8A Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11537 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
Si2325DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W Case: SOT23 Mounting: SMD On-state resistance: 1.2Ω Kind of package: reel; tape Power dissipation: 0.48W Drain current: -530mA Drain-source voltage: -150V Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1.6A Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2325DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; 0.48W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 1.3Ω Kind of package: reel; tape Power dissipation: 0.48W Drain current: -0.43A Drain-source voltage: -150V Polarisation: unipolar Gate charge: 7.7nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2328DS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2328DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; 0.47W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.92A Power dissipation: 0.47W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2360 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2329DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 11.8nC Kind of channel: enhanced Gate-source voltage: ±5V Drain-source voltage: -8V Drain current: -6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2333CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A Kind of package: reel; tape Power dissipation: 2.5W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -7.1A On-state resistance: 59mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2488 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2333CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.7A On-state resistance: 35mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2604 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2333DDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.2A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2560 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2333DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.3A On-state resistance: 59mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2333DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.3A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2334DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.9A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 44mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2336DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.1A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2625 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2337DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -2.2A; Idm: -7A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -2.2A Pulsed drain current: -7A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2337DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -1.75A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4717 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2338DS-T1-BE3 | VISHAY | SI2338DS-T1-BE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2338DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.6W On-state resistance: 28mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2342DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate charge: 15.8nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 30A Power dissipation: 1.6W Drain-source voltage: 8V Drain current: 6A On-state resistance: 17mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2951 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2343CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Pulsed drain current: -25A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2907 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2343DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A Technology: TrenchFET® Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 86mΩ Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 21nC Drain current: -4A Drain-source voltage: -30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -15A Power dissipation: 1.25W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2343DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A Technology: TrenchFET® Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 86mΩ Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 21nC Drain current: -4A Drain-source voltage: -30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -15A Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2347DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3035 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2356DS-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.3A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2356DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.3A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5776 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2365EDS-T1-BE3 | VISHAY | SI2365EDS-T1-BE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2365EDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5190 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2366DS-T1-BE3 | VISHAY | SI2366DS-T1-BE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2366DS-T1-GE3 | VISHAY | SI2366DS-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
+1 |
SI2367DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 66mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
SI2369BDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A Drain-source voltage: -30V Drain current: -7.5A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.5nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: -50A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2369DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23 Drain-source voltage: -30V Drain current: -7.6A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1789 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2371EDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.8A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2374DS-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.9A; Idm: 25A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 5.9A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 25A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI2374DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 4.7A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 7.7nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2720 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2377EDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 61mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2891 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI2387DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Case: SOT23 Drain-source voltage: -80V Drain current: -3A On-state resistance: 242mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
SI2312BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5A; Idm: 15A; 1.25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5A; Idm: 15A; 1.25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2312BDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 15A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 15A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2312CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3057 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
143+ | 0.5 EUR |
197+ | 0.36 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
3000+ | 0.17 EUR |
SI2314EDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2314EDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2315BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; 1.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Power dissipation: 1.19W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; 1.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Power dissipation: 1.19W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3285 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
117+ | 0.61 EUR |
136+ | 0.53 EUR |
178+ | 0.4 EUR |
220+ | 0.33 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
SI2315BDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 0.76 EUR |
111+ | 0.65 EUR |
256+ | 0.28 EUR |
271+ | 0.26 EUR |
SI2316BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316DS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.3A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.3A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
132+ | 0.54 EUR |
151+ | 0.47 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
SI2316DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2318CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4472 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
136+ | 0.53 EUR |
171+ | 0.42 EUR |
257+ | 0.28 EUR |
383+ | 0.19 EUR |
405+ | 0.18 EUR |
SI2318DS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2318DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2540 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
171+ | 0.42 EUR |
190+ | 0.38 EUR |
244+ | 0.29 EUR |
258+ | 0.28 EUR |
SI2319CDS-T1-BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2319CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7128 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
112+ | 0.64 EUR |
130+ | 0.55 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
500+ | 0.3 EUR |
SI2319DDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1326 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
132+ | 0.54 EUR |
162+ | 0.44 EUR |
194+ | 0.37 EUR |
214+ | 0.33 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
SI2319DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3549 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 1.26 EUR |
98+ | 0.74 EUR |
108+ | 0.66 EUR |
142+ | 0.51 EUR |
150+ | 0.48 EUR |
SI2319DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1963 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
81+ | 0.89 EUR |
96+ | 0.75 EUR |
123+ | 0.58 EUR |
161+ | 0.45 EUR |
170+ | 0.42 EUR |
3000+ | 0.41 EUR |
SI2323CDS-T1-BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2323CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2493 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
82+ | 0.87 EUR |
97+ | 0.74 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
SI2323DDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 13.6nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.1W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 13.6nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2986 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
145+ | 0.5 EUR |
218+ | 0.33 EUR |
231+ | 0.31 EUR |
500+ | 0.3 EUR |
SI2323DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 19nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 19nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2413 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 0.76 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
3000+ | 0.52 EUR |
SI2323DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 19nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 68mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 19nC
Drain current: -3.8A
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
79+ | 0.91 EUR |
89+ | 0.81 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
3000+ | 0.43 EUR |
SI2324DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 234mΩ
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 1.8A
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 234mΩ
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 1.8A
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11537 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
97+ | 0.74 EUR |
130+ | 0.55 EUR |
223+ | 0.32 EUR |
236+ | 0.3 EUR |
500+ | 0.29 EUR |
Si2325DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W
Case: SOT23
Mounting: SMD
On-state resistance: 1.2Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -530mA
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1.6A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W
Case: SOT23
Mounting: SMD
On-state resistance: 1.2Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -530mA
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1.6A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2325DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; 0.48W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 1.3Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -0.43A
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; 0.48W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 1.3Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -0.43A
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; 0.47W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.92A
Power dissipation: 0.47W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; 0.47W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.92A
Power dissipation: 0.47W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2360 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
99+ | 0.73 EUR |
132+ | 0.54 EUR |
239+ | 0.3 EUR |
250+ | 0.29 EUR |
SI2329DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Drain-source voltage: -8V
Drain current: -6A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Drain-source voltage: -8V
Drain current: -6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
500+ | 0.36 EUR |
SI2333CDS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -7.1A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -7.1A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2488 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
88+ | 0.82 EUR |
100+ | 0.72 EUR |
124+ | 0.58 EUR |
180+ | 0.4 EUR |
190+ | 0.38 EUR |
1000+ | 0.37 EUR |
3000+ | 0.36 EUR |
SI2333CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.7A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.7A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2604 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 0.69 EUR |
120+ | 0.6 EUR |
136+ | 0.53 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
SI2333DDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.2A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.2A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2560 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
157+ | 0.46 EUR |
176+ | 0.41 EUR |
210+ | 0.34 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
SI2333DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.3A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.3A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
82+ | 0.88 EUR |
93+ | 0.78 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
1000+ | 0.49 EUR |
SI2333DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.3A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.3A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2334DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
221+ | 0.32 EUR |
358+ | 0.2 EUR |
404+ | 0.18 EUR |
466+ | 0.15 EUR |
SI2337DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -2.2A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.2A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -2.2A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.2A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4717 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.03 EUR |
104+ | 0.69 EUR |
117+ | 0.61 EUR |
132+ | 0.54 EUR |
139+ | 0.51 EUR |
SI2338DS-T1-BE3 |
Hersteller: VISHAY
SI2338DS-T1-BE3 SMD N channel transistors
SI2338DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2338DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 25A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2342DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2951 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
122+ | 0.59 EUR |
147+ | 0.49 EUR |
165+ | 0.43 EUR |
285+ | 0.25 EUR |
302+ | 0.24 EUR |
1000+ | 0.23 EUR |
SI2343CDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2907 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
121+ | 0.59 EUR |
137+ | 0.52 EUR |
154+ | 0.46 EUR |
291+ | 0.25 EUR |
307+ | 0.23 EUR |
SI2343DS-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Technology: TrenchFET®
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 86mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 21nC
Drain current: -4A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Technology: TrenchFET®
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 86mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 21nC
Drain current: -4A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2343DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Technology: TrenchFET®
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 86mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 21nC
Drain current: -4A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Technology: TrenchFET®
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 86mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Gate charge: 21nC
Drain current: -4A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2347DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3035 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
315+ | 0.23 EUR |
350+ | 0.21 EUR |
395+ | 0.18 EUR |
455+ | 0.16 EUR |
485+ | 0.15 EUR |
SI2356DS-T1-BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.3A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.3A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2356DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.3A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.3A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5776 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
209+ | 0.34 EUR |
261+ | 0.27 EUR |
371+ | 0.19 EUR |
491+ | 0.15 EUR |
516+ | 0.14 EUR |
3000+ | 0.13 EUR |
SI2365EDS-T1-BE3 |
Hersteller: VISHAY
SI2365EDS-T1-BE3 SMD P channel transistors
SI2365EDS-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI2365EDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5190 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
380+ | 0.19 EUR |
495+ | 0.15 EUR |
550+ | 0.13 EUR |
635+ | 0.11 EUR |
SI2366DS-T1-BE3 |
Hersteller: VISHAY
SI2366DS-T1-BE3 SMD N channel transistors
SI2366DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2366DS-T1-GE3 |
Hersteller: VISHAY
SI2366DS-T1-GE3 SMD N channel transistors
SI2366DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2367DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369BDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1789 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
205+ | 0.35 EUR |
288+ | 0.25 EUR |
305+ | 0.23 EUR |
SI2371EDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.9A; Idm: 25A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.9A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.9A; Idm: 25A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.9A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.7A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.7A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
215+ | 0.33 EUR |
338+ | 0.21 EUR |
410+ | 0.17 EUR |
435+ | 0.16 EUR |
SI2377EDS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
224+ | 0.32 EUR |
292+ | 0.25 EUR |
308+ | 0.23 EUR |
SI2387DS-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar