| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI7121DN-T1-GE3 | VISHAY |
 SI7121DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7129DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -60A Power dissipation: 52.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7135DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 250nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7137DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7139DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -70A Power dissipation: 30W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 146nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7141DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 400nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7143DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -60A Power dissipation: 35.7W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 18.6mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7145DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A Drain current: -60A On-state resistance: 3.75mΩ Type of transistor: P-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 413nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -100A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: -30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7148DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 96W Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 75V Drain current: 28A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7148DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 61W Gate charge: 0.1µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 75V Drain current: 28A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7149ADP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8 Drain current: -50A On-state resistance: 9.5mΩ Type of transistor: P-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43.1nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: -30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3361 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI7149DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -70A Power dissipation: 44.4W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7153DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -100A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5354 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI7155DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -100A Pulsed drain current: -200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 330nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7157DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 625nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 60A On-state resistance: 6.25mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7172ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SI7172DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 76mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7174DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 60A Pulsed drain current: 80A Power dissipation: 66.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7178DP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7190ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 14.4A Pulsed drain current: 30A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 22.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SI7190DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 18.4A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7192DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7212DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 2.6W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 39mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7212DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 2.6W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 39mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7216DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 20A Power dissipation: 20.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7216DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 20A Power dissipation: 20.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7220DN-T1-E3 | VISHAY |
SI7220DN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7220DN-T1-GE3 | VISHAY |
SI7220DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7223DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -6A On-state resistance: 37.2mΩ Type of transistor: P-MOSFET x2 Power dissipation: 23W Polarisation: unipolar Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SI7232DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 25A On-state resistance: 24mΩ Type of transistor: N-MOSFET x2 Power dissipation: 23W Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 40A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7234DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 46W Drain-source voltage: 12V Drain current: 60A On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7252ADP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 70A Power dissipation: 21.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SI7252DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7272DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 60A Power dissipation: 22W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7288DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Pulsed drain current: 50A Power dissipation: 15.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2939 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI7308DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 19.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 20A Power dissipation: 19.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7308DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 20A Power dissipation: 12.7W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7309DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7309DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7315DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -10A; 33W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 33W Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -10A Type of transistor: P-MOSFET On-state resistance: 315mΩ Drain current: -8.9A Drain-source voltage: -150V Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7317DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A Mounting: SMD Case: PowerPAK® 1212-8 Polarisation: unipolar Power dissipation: 19.8W Kind of package: reel; tape Gate charge: 9.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -2A Drain-source voltage: -150V Drain current: -2.8A On-state resistance: 1.3Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7322ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7322DN-T1-GE3 | VISHAY |
SI7322DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7326DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 3.5W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7326DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 3.5W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7328DN-T1-E3 | VISHAY |
SI7328DN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7328DN-T1-GE3 | VISHAY |
SI7328DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7336ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7336ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7370DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.8A Pulsed drain current: 50A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7370DP-T1-GE3 | VISHAY |
SI7370DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7374DP-T1-E3 | VISHAY |
SI7374DP-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7386DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 5W On-state resistance: 9.5mΩ Drain current: 19A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7386DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 5W On-state resistance: 9.5mΩ Drain current: 19A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7390DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 30V Drain current: 15A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 15nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7390DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 30V Drain current: 15A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 15nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7414DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.6A; Idm: 30A; 0.8W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.6A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7414DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.7A; Idm: 30A Kind of package: reel; tape Drain-source voltage: 60V Drain current: 8.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7415DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.7A; Idm: -30A Kind of package: reel; tape Power dissipation: 3.8W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: -60V Drain current: -5.7A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
| SI7121DN-T1-GE3 |
|
Hersteller: VISHAY
SI7121DN-T1-GE3 SMD P channel transistors
SI7121DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7129DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7135DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7137DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7139DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7141DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7143DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7145DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Drain current: -60A
On-state resistance: 3.75mΩ
Type of transistor: P-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 413nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Drain current: -60A
On-state resistance: 3.75mΩ
Type of transistor: P-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 413nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7148DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 96W
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 96W
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7148DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 61W
Gate charge: 0.1µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 61W
Gate charge: 0.1µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7149ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3361 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.03 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| 500+ | 0.51 EUR |
| SI7149DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7153DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5354 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 159+ | 0.45 EUR |
| 199+ | 0.36 EUR |
| 210+ | 0.34 EUR |
| 3000+ | 0.33 EUR |
| SI7155DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7157DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7164DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7172ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SI7172DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7174DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7178DP-T1-GE3 | |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7190ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SI7190DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7192DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7212DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7212DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7216DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7216DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7220DN-T1-E3 |
|
Hersteller: VISHAY
SI7220DN-T1-E3 SMD N channel transistors
SI7220DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7220DN-T1-GE3 |
|
Hersteller: VISHAY
SI7220DN-T1-GE3 SMD N channel transistors
SI7220DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7223DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 37.2mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Anzahl je Verpackung: 6000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 37.2mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SI7232DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 25A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 40A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 25A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7234DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7252ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SI7252DP-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7272DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7288DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2939 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.76 EUR |
| 56+ | 1.29 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.93 EUR |
| 3000+ | 0.9 EUR |
| SI7308DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 19.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 19.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 19.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 19.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7308DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7309DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7309DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7315DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -10A; 33W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -10A
Type of transistor: P-MOSFET
On-state resistance: 315mΩ
Drain current: -8.9A
Drain-source voltage: -150V
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -10A; 33W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -10A
Type of transistor: P-MOSFET
On-state resistance: 315mΩ
Drain current: -8.9A
Drain-source voltage: -150V
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7317DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A
Mounting: SMD
Case: PowerPAK® 1212-8
Polarisation: unipolar
Power dissipation: 19.8W
Kind of package: reel; tape
Gate charge: 9.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -2.8A
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A
Mounting: SMD
Case: PowerPAK® 1212-8
Polarisation: unipolar
Power dissipation: 19.8W
Kind of package: reel; tape
Gate charge: 9.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -2.8A
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7322ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7322DN-T1-GE3 |
|
Hersteller: VISHAY
SI7322DN-T1-GE3 SMD N channel transistors
SI7322DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7326DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7326DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 10A; Idm: 40A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7328DN-T1-E3 |
|
Hersteller: VISHAY
SI7328DN-T1-E3 SMD N channel transistors
SI7328DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7328DN-T1-GE3 |
|
Hersteller: VISHAY
SI7328DN-T1-GE3 SMD N channel transistors
SI7328DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7336ADP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7336ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7370DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7370DP-T1-GE3 |
|
Hersteller: VISHAY
SI7370DP-T1-GE3 SMD N channel transistors
SI7370DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7374DP-T1-E3 |
|
Hersteller: VISHAY
SI7374DP-T1-E3 SMD N channel transistors
SI7374DP-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7386DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7386DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7390DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 15A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 15A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7390DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 15A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 15A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7414DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.6A; Idm: 30A; 0.8W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 5.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.6A; Idm: 30A; 0.8W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 5.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7414DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.7A; Idm: 30A
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 8.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.7A; Idm: 30A
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 8.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7415DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.7A; Idm: -30A
Kind of package: reel; tape
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -60V
Drain current: -5.7A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.7A; Idm: -30A
Kind of package: reel; tape
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -60V
Drain current: -5.7A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar