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Si7111EDN-T1-GE3 VISHAY si7111edn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7112DN-T1-E3 VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7112DN-T1-GE3 VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113ADN-T1-GE3 VISHAY si7113adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Drain-source voltage: -100V
Drain current: -10.8A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET
Power dissipation: 17.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113DN-T1-E3 VISHAY si7113dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113DN-T1-GE3 SI7113DN-T1-GE3 VISHAY si7113dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -3.5A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2590 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.9 EUR
46+ 1.57 EUR
66+ 1.09 EUR
70+ 1.03 EUR
1000+ 1 EUR
Mindestbestellmenge: 38
SI7114ADN-T1-GE3 VISHAY si7114ad.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7114DN-T1-E3 VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7114DN-T1-GE3 VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7115DN-T1-E3 VISHAY si7115dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -15A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 52W
Kind of package: reel; tape
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Type of transistor: P-MOSFET
On-state resistance: 315mΩ
Drain current: -8.9A
Drain-source voltage: -150V
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7115DN-T1-GE3 VISHAY si7115dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
35+ 2.04 EUR
57+ 1.26 EUR
61+ 1.19 EUR
1000+ 1.17 EUR
3000+ 1.14 EUR
Mindestbestellmenge: 30
SI7116BDN-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7116DN-T1-E3 VISHAY si7116dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7116DN-T1-GE3 VISHAY si7116dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7117DN-T1-E3 VISHAY si7117dn.pdf SI7117DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7117DN-T1-GE3 VISHAY si7117dn.pdf SI7117DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7119DN-T1-E3 VISHAY si7119dn.pdf SI7119DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7119DN-T1-GE3 VISHAY si7119dn.pdf SI7119DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Si7120ADN-T1-GE3 VISHAY si7120ad.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7121ADN-T1-GE3 VISHAY si7121adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7121DN-T1-GE3 VISHAY si7121adn.pdf SI7121DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7129DN-T1-GE3 VISHAY si7129dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7135DP-T1-GE3 VISHAY si7135dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7137DP-T1-GE3 VISHAY si7137dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7139DP-T1-GE3 VISHAY si7139dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7141DP-T1-GE3 VISHAY si7141dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7143DP-T1-GE3 VISHAY si7143dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7145DP-T1-GE3 VISHAY si7145dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Drain current: -60A
On-state resistance: 3.75mΩ
Type of transistor: P-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 413nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7148DP-T1-E3 VISHAY 73314.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 96W
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7148DP-T1-GE3 VISHAY 73314.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 61W
Gate charge: 0.1µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7149ADP-T1-GE3 SI7149ADP-T1-GE3 VISHAY si7149adp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3361 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
129+ 0.56 EUR
136+ 0.53 EUR
500+ 0.51 EUR
Mindestbestellmenge: 70
SI7149DP-T1-GE3 VISHAY si7149dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7153DN-T1-GE3 SI7153DN-T1-GE3 VISHAY SI7153DN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5354 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
159+ 0.45 EUR
199+ 0.36 EUR
210+ 0.34 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 143
SI7155DP-T1-GE3 VISHAY si7155dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7157DP-T1-GE3 VISHAY si7157dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7164DP-T1-GE3 VISHAY si7164dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7172ADP-T1-RE3 VISHAY si7172adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7172DP-T1-GE3 VISHAY si7172dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7174DP-T1-GE3 VISHAY si7174dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.5W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7178DP-T1-GE3 VISHAY si7178dp.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7190ADP-T1-RE3 VISHAY si7190adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7190DP-T1-GE3 VISHAY si7190dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7192DP-T1-GE3 VISHAY si7192dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7212DN-T1-E3 VISHAY si7212dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7212DN-T1-GE3 VISHAY si7212dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7216DN-T1-E3 VISHAY si7216dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7216DN-T1-GE3 VISHAY si7216dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7220DN-T1-E3 VISHAY si7220dn.pdf SI7220DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7220DN-T1-GE3 VISHAY 73117.pdf SI7220DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7223DN-T1-GE3 VISHAY si7223dn.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 37.2mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7232DN-T1-GE3 VISHAY si7232dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 25A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7234DP-T1-GE3 VISHAY si7234dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7252ADP-T1-GE3 VISHAY si7252adp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7252DP-T1-GE3 VISHAY si7252dp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7272DP-T1-GE3 VISHAY si7272dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7288DP-T1-GE3 SI7288DP-T1-GE3 VISHAY si7288dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2939 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
56+ 1.29 EUR
74+ 0.97 EUR
77+ 0.93 EUR
3000+ 0.9 EUR
Mindestbestellmenge: 41
SI7308DN-T1-E3 VISHAY 73419.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 19.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 19.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7308DN-T1-GE3 VISHAY SI7308DN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7309DN-T1-E3 VISHAY si7309dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7309DN-T1-GE3 VISHAY si7309dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si7111EDN-T1-GE3 si7111edn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7112DN-T1-E3 si7112dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7112DN-T1-GE3 si7112dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113ADN-T1-GE3 si7113adn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Drain-source voltage: -100V
Drain current: -10.8A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET
Power dissipation: 17.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113DN-T1-E3 si7113dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7113DN-T1-GE3 si7113dn.pdf
SI7113DN-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -3.5A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2590 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
46+ 1.57 EUR
66+ 1.09 EUR
70+ 1.03 EUR
1000+ 1 EUR
Mindestbestellmenge: 38
SI7114ADN-T1-GE3 si7114ad.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7114DN-T1-E3 si7114dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7114DN-T1-GE3 si7114dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7115DN-T1-E3 si7115dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -15A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 52W
Kind of package: reel; tape
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A
Type of transistor: P-MOSFET
On-state resistance: 315mΩ
Drain current: -8.9A
Drain-source voltage: -150V
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7115DN-T1-GE3 si7115dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.45 EUR
35+ 2.04 EUR
57+ 1.26 EUR
61+ 1.19 EUR
1000+ 1.17 EUR
3000+ 1.14 EUR
Mindestbestellmenge: 30
SI7116BDN-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7116DN-T1-E3 si7116dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7116DN-T1-GE3 si7116dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7117DN-T1-E3 si7117dn.pdf
Hersteller: VISHAY
SI7117DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7117DN-T1-GE3 si7117dn.pdf
Hersteller: VISHAY
SI7117DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7119DN-T1-E3 si7119dn.pdf
Hersteller: VISHAY
SI7119DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7119DN-T1-GE3 si7119dn.pdf
Hersteller: VISHAY
SI7119DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Si7120ADN-T1-GE3 si7120ad.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7121ADN-T1-GE3 si7121adn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7121DN-T1-GE3 si7121adn.pdf
Hersteller: VISHAY
SI7121DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7129DN-T1-GE3 si7129dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7135DP-T1-GE3 si7135dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7137DP-T1-GE3 si7137dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7139DP-T1-GE3 si7139dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7141DP-T1-GE3 si7141dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7143DP-T1-GE3 si7143dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7145DP-T1-GE3 si7145dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Drain current: -60A
On-state resistance: 3.75mΩ
Type of transistor: P-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 413nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7148DP-T1-E3 73314.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 96W
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7148DP-T1-GE3 73314.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 61W
Gate charge: 0.1µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 28A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7149ADP-T1-GE3 si7149adp.pdf
SI7149ADP-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3361 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
129+ 0.56 EUR
136+ 0.53 EUR
500+ 0.51 EUR
Mindestbestellmenge: 70
SI7149DP-T1-GE3 si7149dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7153DN-T1-GE3 SI7153DN.pdf
SI7153DN-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5354 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
159+ 0.45 EUR
199+ 0.36 EUR
210+ 0.34 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 143
SI7155DP-T1-GE3 si7155dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7157DP-T1-GE3 si7157dp.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7164DP-T1-GE3 si7164dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7172ADP-T1-RE3 si7172adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7172DP-T1-GE3 si7172dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7174DP-T1-GE3 si7174dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.5W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7178DP-T1-GE3 description si7178dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7190ADP-T1-RE3 si7190adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7190DP-T1-GE3 si7190dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7192DP-T1-GE3 si7192dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7212DN-T1-E3 si7212dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7212DN-T1-GE3 si7212dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7216DN-T1-E3 si7216dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7216DN-T1-GE3 si7216dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 20.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7220DN-T1-E3 si7220dn.pdf
Hersteller: VISHAY
SI7220DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7220DN-T1-GE3 73117.pdf
Hersteller: VISHAY
SI7220DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7223DN-T1-GE3 si7223dn.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 37.2mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7232DN-T1-GE3 si7232dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 25A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7234DP-T1-GE3 si7234dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7252ADP-T1-GE3 si7252adp.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SI7252DP-T1-GE3 si7252dp.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7272DP-T1-GE3 si7272dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7288DP-T1-GE3 si7288dp.pdf
SI7288DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2939 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
56+ 1.29 EUR
74+ 0.97 EUR
77+ 0.93 EUR
3000+ 0.9 EUR
Mindestbestellmenge: 41
SI7308DN-T1-E3 73419.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 19.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 19.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7308DN-T1-GE3 SI7308DN.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 20A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7309DN-T1-E3 si7309dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7309DN-T1-GE3 si7309dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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