| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SISF06DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 81A Pulsed drain current: 190A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 6.95mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISF20DN-T1-GE3 | VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 100A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 13mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 15.6A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 17.6A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±16V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH110DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISH112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISH114ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 60A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 13.1A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH129DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Pulsed drain current: -60A Power dissipation: 33.3W Gate charge: 71nC Polarisation: unipolar Drain current: -35A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH402DN-T1-GE3 | VISHAY |
SISH402DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SISH407DN-T1-GE3 | VISHAY |
SISH407DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SISH410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH434DN-T1-GE3 | VISHAY |
SISH434DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SISH472DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 20A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Gate charge: 30nC Mounting: SMD Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH536DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 54A Pulsed drain current: 200A Power dissipation: 17W Case: PowerPAK® 1212-8 Gate-source voltage: -12...16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH615ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Mounting: SMD Kind of package: reel; tape Gate charge: 183nC Polarisation: unipolar Technology: TrenchFET® Drain current: -35A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Case: PowerPAK® 1212-8 On-state resistance: 9.8mΩ Pulsed drain current: -80A Power dissipation: 33W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH617DN-T1-GE3 | VISHAY |
SISH617DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SISH625DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH892BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 18.6W Polarisation: unipolar Gate charge: 26.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V Drain current: 16A On-state resistance: 34.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISHA04DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 80A Power dissipation: 43W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISHA10DN-T1-GE3 | VISHAY | SISHA10DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SISHA12ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 80A Power dissipation: 18W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISHA14DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 80A Power dissipation: 17W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS02DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 42W Pulsed drain current: 300A Gate charge: 83nC Polarisation: unipolar Drain current: 80A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: -12...16V On-state resistance: 1.83mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS04DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W Mounting: SMD Case: PowerPAK® 1212-8 Drain current: 80A On-state resistance: 1.85mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 93nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISS05DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W Mounting: SMD Kind of package: reel; tape On-state resistance: 5.8mΩ Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Drain current: -86.6A Drain-source voltage: -30V Gate charge: 115nC Case: PowerPAK® 1212-8 Kind of channel: enhanced Gate-source voltage: -20...16V Pulsed drain current: -300A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2765 Stücke: Lieferzeit 7-14 Tag (e) |
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| SISS06DN-T1-GE3 | VISHAY |
SISS06DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SISS08DN-T1-GE3 | VISHAY |
SISS08DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SISS10ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 86.8A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.95mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS10DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS12DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Case: PowerPAK® 1212-8 Drain-source voltage: 40V Drain current: 60A On-state resistance: 2.74mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 89nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS22DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 72.5A; Idm: 150A Mounting: SMD Kind of package: reel; tape Gate charge: 44nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 72.5A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS22LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 74A; Idm: 150A; 42W Mounting: SMD Kind of package: reel; tape Gate charge: 56nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 74A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS23DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -50A; Idm: -200A; 36W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 300nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -200A Drain-source voltage: -20V Drain current: -50A On-state resistance: 4.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS26DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS26LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS27ADN-T1-GE3 | VISHAY |
SISS27ADN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SISS27DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SiSS28DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 36W Mounting: SMD Drain-source voltage: 25V Drain current: 60A On-state resistance: 2.24mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS30ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Mounting: SMD Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS30DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Mounting: SMD Power dissipation: 36W Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS30LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 80V Drain current: 44A On-state resistance: 12.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 50nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS32ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 36nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS32DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 42nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS32LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 57nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS40DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 29A; Idm: 60A; 33W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 33W Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 100V Drain current: 29A On-state resistance: 26mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS42DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 100V Drain current: 32.4A On-state resistance: 17mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS42LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 31.2A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 100V Drain current: 31.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS46DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36.2A Pulsed drain current: 100A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 14.6mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS50DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W Mounting: SMD Polarisation: unipolar Drain-source voltage: 45V Drain current: 86A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 42W Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 300A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS5108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SISS54DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 148.5A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SISS588DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36.3W Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 46.5A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.5nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS60DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 145.4A Pulsed drain current: 200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: -12...16V On-state resistance: 2.01mΩ Mounting: SMD Gate charge: 85.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS61DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -89.6A Pulsed drain current: -200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5939 Stücke: Lieferzeit 7-14 Tag (e) |
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| SISS63DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -102A Pulsed drain current: -200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 236nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS64DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 2.86mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS65DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A Mounting: SMD Kind of package: reel; tape Pulsed drain current: -120A Type of transistor: P-MOSFET Power dissipation: 42.1W Polarisation: unipolar Drain current: 75.2A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Gate charge: 138nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 7.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| SISF06DN-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISF20DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH101DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH106DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH108DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH110DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH112DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH114ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH116DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH129DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 33.3W
Gate charge: 71nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 33.3W
Gate charge: 71nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH402DN-T1-GE3 |
|
Hersteller: VISHAY
SISH402DN-T1-GE3 SMD N channel transistors
SISH402DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SISH407DN-T1-GE3 |
|
Hersteller: VISHAY
SISH407DN-T1-GE3 SMD P channel transistors
SISH407DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SISH410DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH434DN-T1-GE3 |
|
Hersteller: VISHAY
SISH434DN-T1-GE3 SMD N channel transistors
SISH434DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SISH472DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Gate charge: 30nC
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Gate charge: 30nC
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH536DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH615ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 183nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PowerPAK® 1212-8
On-state resistance: 9.8mΩ
Pulsed drain current: -80A
Power dissipation: 33W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 183nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PowerPAK® 1212-8
On-state resistance: 9.8mΩ
Pulsed drain current: -80A
Power dissipation: 33W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH617DN-T1-GE3 |
|
Hersteller: VISHAY
SISH617DN-T1-GE3 SMD P channel transistors
SISH617DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SISH625DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISH892BDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 18.6W
Polarisation: unipolar
Gate charge: 26.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 34.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 18.6W
Polarisation: unipolar
Gate charge: 26.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 34.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISHA04DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISHA10DN-T1-GE3 |
Hersteller: VISHAY
SISHA10DN-T1-GE3 SMD N channel transistors
SISHA10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SISHA12ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISHA14DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS02DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 42W
Pulsed drain current: 300A
Gate charge: 83nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 42W
Pulsed drain current: 300A
Gate charge: 83nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS04DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 80A
On-state resistance: 1.85mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 80A
On-state resistance: 1.85mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS05DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Drain current: -86.6A
Drain-source voltage: -30V
Gate charge: 115nC
Case: PowerPAK® 1212-8
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -300A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Drain current: -86.6A
Drain-source voltage: -30V
Gate charge: 115nC
Case: PowerPAK® 1212-8
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2765 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.56 EUR |
| 52+ | 1.39 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 500+ | 1.09 EUR |
| SISS06DN-T1-GE3 |
|
Hersteller: VISHAY
SISS06DN-T1-GE3 SMD N channel transistors
SISS06DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SISS08DN-T1-GE3 |
|
Hersteller: VISHAY
SISS08DN-T1-GE3 SMD N channel transistors
SISS08DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SISS10ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS10DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS12DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Case: PowerPAK® 1212-8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.74mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 89nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Case: PowerPAK® 1212-8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.74mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 89nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS22DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 72.5A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 72.5A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 72.5A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 72.5A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS22LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 74A; Idm: 150A; 42W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 74A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 74A; Idm: 150A; 42W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 74A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS23DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -50A; Idm: -200A; 36W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 300nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -200A
Drain-source voltage: -20V
Drain current: -50A
On-state resistance: 4.5mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -50A; Idm: -200A; 36W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 300nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -200A
Drain-source voltage: -20V
Drain current: -50A
On-state resistance: 4.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS26DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS26LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 65A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 65A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS27ADN-T1-GE3 |
|
Hersteller: VISHAY
SISS27ADN-T1-GE3 SMD P channel transistors
SISS27ADN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SISS27DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SiSS28DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.24mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.24mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS30ADN-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 43.5A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 43.5A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS30DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A
Mounting: SMD
Power dissipation: 36W
Drain-source voltage: 80V
Drain current: 43.5A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A
Mounting: SMD
Power dissipation: 36W
Drain-source voltage: 80V
Drain current: 43.5A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS30LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 44A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 44A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS32ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS32DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS32LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 57nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 57nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS40DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 29A; Idm: 60A; 33W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Drain current: 29A
On-state resistance: 26mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 29A; Idm: 60A; 33W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Drain current: 29A
On-state resistance: 26mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS42DN-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 100V
Drain current: 32.4A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 100V
Drain current: 32.4A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS42LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 31.2A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 100V
Drain current: 31.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 31.2A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 100V
Drain current: 31.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS46DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36.2A
Pulsed drain current: 100A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 14.6mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36.2A
Pulsed drain current: 100A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 14.6mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS50DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 86A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 86A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS5108DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 55.9A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 55.9A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SISS54DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 148.5A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 148.5A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS5808DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SISS588DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 46.5A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 46.5A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS60DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 145.4A
Pulsed drain current: 200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 2.01mΩ
Mounting: SMD
Gate charge: 85.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 145.4A
Pulsed drain current: 200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 2.01mΩ
Mounting: SMD
Gate charge: 85.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS61DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5939 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 76+ | 0.95 EUR |
| 96+ | 0.75 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| 3000+ | 0.59 EUR |
| SISS63DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -102A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 236nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -102A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 236nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS64DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 2.86mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 2.86mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS65DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -120A
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Drain current: 75.2A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Gate charge: 138nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -120A
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Drain current: 75.2A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Gate charge: 138nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 1 Stücke
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