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WI62120 | Wise-Integration |
 Description: GANFET 650V 13A 14QFNPackaging: Tray Package / Case: 14-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A Input Capacitance (Ciss) (Max) @ Vds: 92.7pF @ 400V Gate Charge (Qg) (Max) @ Vgs: 2.75nC @ 6V Vgs(th) (Max) @ Id: 2.2V @ 10mA Supplier Device Package: 14-PQFN (6x8) |
auf Bestellung 1479 Stücke: Lieferzeit 10-14 Tag (e) |
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| WI62195 | Wise-Integration |
Description: GANFET 2P-CH 750V 9A 14QFN Packaging: Tray Package / Case: 14-PowerLDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 9A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V FET Feature: GaNFET (Gallium Nitride) Vgs(th) (Max) @ Id: 1.75V @ 10mA Supplier Device Package: 14-PQFN (6x8) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WI62120 |
|
Hersteller: Wise-Integration
Description: GANFET 650V 13A 14QFN
Packaging: Tray
Package / Case: 14-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 92.7pF @ 400V
Gate Charge (Qg) (Max) @ Vgs: 2.75nC @ 6V
Vgs(th) (Max) @ Id: 2.2V @ 10mA
Supplier Device Package: 14-PQFN (6x8)
Description: GANFET 650V 13A 14QFN
Packaging: Tray
Package / Case: 14-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 92.7pF @ 400V
Gate Charge (Qg) (Max) @ Vgs: 2.75nC @ 6V
Vgs(th) (Max) @ Id: 2.2V @ 10mA
Supplier Device Package: 14-PQFN (6x8)
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.36 EUR |
| 10+ | 11.45 EUR |
| 25+ | 10.66 EUR |
| 80+ | 9.54 EUR |
| 300+ | 8.98 EUR |
| 600+ | 8.41 EUR |
| 1200+ | 7.58 EUR |
| WI62195 |
|
Hersteller: Wise-Integration
Description: GANFET 2P-CH 750V 9A 14QFN
Packaging: Tray
Package / Case: 14-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V
FET Feature: GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id: 1.75V @ 10mA
Supplier Device Package: 14-PQFN (6x8)
Description: GANFET 2P-CH 750V 9A 14QFN
Packaging: Tray
Package / Case: 14-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V
FET Feature: GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id: 1.75V @ 10mA
Supplier Device Package: 14-PQFN (6x8)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH