Produkte > IPG
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPG-22211 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-11) .2 to .39" | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22211 | Bud Industries | Description: CABLE GLAND 5-10MM PG11 NYLON Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG11 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.730" (18.5mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.390" (9.91mm) Outside Cable Diameter (Min): 0.200" (5.08mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 3257 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22211 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22211 - CABLE GLAND, NYLON, 9.9MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG11 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 0 Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 0 Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (23-Jan-2024) | auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-22211-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips CBL GLAND/BEND PROOF WIRE DIA 0.2- 0.39" | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22211-BPG | Bud Industries | Description: CABLE GLAND 5-10MM PG11 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG11 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.730" (18.5mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.390" (9.91mm) Outside Cable Diameter (Min): 0.200" (5.08mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22211-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.2- 0.39" | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22211-G | Bud Industries | Description: CABLE GLAND 5-10MM PG11 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG11 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.730" (18.5mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.390" (9.91mm) Outside Cable Diameter (Min): 0.200" (5.08mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222114-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall (PG-11) .2 to .39" | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222114-G | Bud Industries | Description: CABLE GLAND 5.08-9.91MM PG11 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG11 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.710" (18.0mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.390" (9.91mm) Outside Cable Diameter (Min): 0.200" (5.08mm) Thread Length: 0.590" (14.99mm) | auf Bestellung 3623 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222135 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-13.5) .24 to .47" | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222135 | Bud Industries | Description: CABLE GLAND 6.1-11.94MM PG13.5 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG13.5 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.800" (20.3mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.470" (11.94mm) Outside Cable Diameter (Min): 0.240" (6.10mm) Thread Length: 0.350" (8.89mm) | auf Bestellung 18537 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-222135 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-222135 - CABLE GLAND, NYLON, 11.9MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG13.5 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 0 Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 0 Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (23-Jan-2024) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-222135-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-13.5) .24 to .47" | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222135-BPG | Bud Industries | Description: CABLE GLAND 6-12MM PG13.5 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG13.5 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.800" (20.3mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.470" (11.94mm) Outside Cable Diameter (Min): 0.240" (6.10mm) Thread Length: 0.350" (8.89mm) | auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222135-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.24- 0.47" | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-222135-G | Bud Industries | Description: CABLE GLAND 6.1-11.94MM PG13.5 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG13.5 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.800" (20.3mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.470" (11.94mm) Outside Cable Diameter (Min): 0.240" (6.10mm) Thread Length: 0.350" (8.89mm) | auf Bestellung 6686 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-2221354-G | BUD Industries | Cable Accessories Gland Nylon Light Gray | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-2221354-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips CABLE GLAND/LNG THRD WIRE DIA 0.24- 0.47 | auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-2221354-G | Bud Industries | Description: CABLE GLAND 6.1-11.94MM PG13.5 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG13.5 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.790" (20.1mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.470" (11.94mm) Outside Cable Diameter (Min): 0.240" (6.10mm) Thread Length: 0.590" (14.99mm) | auf Bestellung 462 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22216 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22216 - CABLE GLAND, NYLON, 14MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG16 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 0 Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 0 Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (23-Jan-2024) | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-22216 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-16) .39 to .55" | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22216 | Bud Industries | Description: CABLE GLAND 9.91-13.97MM PG16 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG16 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.890" (22.6mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.550" (13.97mm) Outside Cable Diameter (Min): 0.390" (9.91mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 6269 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22216-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-16) .39 to .55" | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22216-BPG | Bud Industries | Description: CABLE GLAND 10-14MM PG16 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG16 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.890" (22.6mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.550" (13.97mm) Outside Cable Diameter (Min): 0.390" (9.91mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22216-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-16) .39 to .55" | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22216-G | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22216-G - CABLE GLAND, NYLON, 14MM, GREY Gewindemaß - Imperial: PG16 Material der Kabelverschraubung: Nylon (Polyamide) Kabeldurchmesser, min.: 9.9 Gewindemaß - Metrisch: - IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Grey Kabeldurchmesser, max.: 14 Produktpalette: - SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22216-G | Bud Industries | Description: CABLE GLAND 10-14MM PG16 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG16 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.890" (22.6mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.550" (13.97mm) Outside Cable Diameter (Min): 0.390" (9.91mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222164-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-16) .39 to .55" | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-222164-G | Bud Industries | Description: CABLE GLAND 10-14MM PG16 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG16 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.870" (22.1mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.550" (13.97mm) Outside Cable Diameter (Min): 0.390" (9.91mm) Thread Length: 0.590" (14.99mm) | auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22219 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-19) 0.47 to 0.59 | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22219 | Bud Industries | Description: CABLE GLAND 11.94-14.99MM PG19 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG19 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.930" (23.6mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.590" (14.99mm) Outside Cable Diameter (Min): 0.470" (11.94mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 11656 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22219-G | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22219-G - CABLE GLAND, NYLON, 15MM, GREY tariffCode: 85472000 Gewindemaß - Imperial: PG19 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 0 Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Grey usEccn: EAR99 Kabeldurchmesser, max.: 0 Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (23-Jan-2024) | auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-22219-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-19) 0.47 to 0.59 | auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22219-G | Bud Industries | Description: CABLE GLAND 12-15MM PG19 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG19 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.930" (23.6mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.590" (14.99mm) Outside Cable Diameter (Min): 0.470" (11.94mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22221 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22221 - CABLE GLAND, NYLON, 18MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG21 productTraceability: No Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 12.9mm Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 18mm Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-22221 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-21) .51 to .7" | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22221 | Bud Industries | Description: CABLE GLAND 12.95-18.03MM PG21 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG21 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.110" (28.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.710" (18.03mm) Outside Cable Diameter (Min): 0.510" (12.95mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22221-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-21) .51 to .7" | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22221-BPG | Bud Industries | Description: CABLE GLAND 13-17.8MM PG21 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG21 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.110" (28.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.700" (17.78mm) Outside Cable Diameter (Min): 0.510" (12.95mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 737 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22221-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-21) .51 to .7" | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22221-G | Bud Industries | Description: CABLE GLAND 13-18MM PG21 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG21 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.110" (28.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.710" (18.03mm) Outside Cable Diameter (Min): 0.510" (12.95mm) Thread Length: 0.390" (9.91mm) | auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22225 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-25) 0.59 to 0.75 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22225 | Bud Industries | Description: CABLE GLAND 14.99-19.05MM PG25 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG25 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.160" (29.5mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Outside Cable Diameter (Max): 0.750" (19.05mm) Outside Cable Diameter (Min): 0.590" (14.99mm) Thread Length: 0.430" (10.92mm) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22225 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-22225 - CABLE GLAND, NYLON, 19MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG25 productTraceability: No Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 0 Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 0 Produktpalette: Multicomp Pro RJ45 Adapter SVHC: No SVHC (23-Jan-2024) | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-22225-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-25) 0.59 to 0.75 | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22225-G | Bud Industries | Description: CABLE GLAND 14.99-19.05MM PG25 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG25 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.160" (29.5mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.750" (19.05mm) Outside Cable Diameter (Min): 0.590" (14.99mm) Thread Length: 0.430" (10.92mm) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22229 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.71- 0.98" | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22229 | Bud Industries | Description: CABLE GLAND 18-25MM PG29 NYLON Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG29 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.460" (37.1mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Outside Cable Diameter (Max): 0.980" (24.89mm) Outside Cable Diameter (Min): 0.710" (18.03mm) Thread Length: 0.470" (11.94mm) | auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22229-G | Bud Industries | Description: CABLE GLAND 18-25MM PG29 NYLON | auf Bestellung 1469 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22229-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.71- 0.98" | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22236 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.87-1.26" | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22236 | Bud Industries | Description: CABLE GLAND 22-32MM PG36 NYLON Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG36 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 1.850" (47.0mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Outside Cable Diameter (Max): 1.260" (32.00mm) Outside Cable Diameter (Min): 0.870" (22.10mm) Thread Length: 0.530" (13.46mm) | auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22236-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-36) 0.87 to 1.26 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22236-G | Bud Industries | Description: CABLE GLAND 22-32MM PG36 NYLON | auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22242 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-42) 1.18 to 1.50 | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22242 | Bud Industries | Description: CABLE GLAND 30-38MM PG42 NYLON | auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22242-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-42) 1.18 to 1.50 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22242-G | Bud Industries | Description: CABLE GLAND 30-38MM PG42 NYLON | auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22248 | Bud Industries | Description: CABLE GLAND 34-44MM PG48 NYLON Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG48 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 2.320" (58.9mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 1.730" (43.94mm) Outside Cable Diameter (Min): 1.340" (34.04mm) Thread Length: 0.550" (13.97mm) | auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22248 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-48) 1.34 to 1.73 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22248-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-48) 1.34 to 1.73 | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22248-G | Bud Industries | Description: CABLE GLAND 34-44MM PG48 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG48 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 2.320" (58.9mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 1.730" (43.94mm) Outside Cable Diameter (Min): 1.340" (34.04mm) Thread Length: 0.550" (13.97mm) | auf Bestellung 1958 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22263 | Bud Industries | Cable Mounting & Accessories NYLON CABLE GLAND WIRE DIA 1.65-1.97" | Produkt ist nicht verfügbar | |||||||||||||||||
IPG-22263-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 1.65-1.97" | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-2227 | Bud Industries | Description: CABLE GLAND 3.05-6.1MM PG7 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG7 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.490" (12.4mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.240" (6.10mm) Outside Cable Diameter (Min): 0.120" (3.05mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 8633 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2227 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-7) .12 to .24" | auf Bestellung 904 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2227 | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-2227 - CABLE GLAND, NYLON, 6MM, BLACK tariffCode: 85472000 Gewindemaß - Imperial: PG7 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 3mm Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Black usEccn: EAR99 Kabeldurchmesser, max.: 6mm Produktpalette: - SVHC: No SVHC (14-Jun-2023) | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-2227-BPG | Bud Industries | Description: CABLE GLAND 3-6MM PG7 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG7 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.490" (12.4mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.240" (6.10mm) Outside Cable Diameter (Min): 0.120" (3.05mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 531 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2227-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-7) .12 to .24" | auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2227-G | BUD INDUSTRIES | Description: BUD INDUSTRIES - IPG-2227-G - CABLE GLAND, NYLON, 6MM, GREY tariffCode: 85472000 Gewindemaß - Imperial: PG7 productTraceability: Yes-Date/Lot Code Material der Kabelverschraubung: Nylon (Polyamide) rohsCompliant: YES Kabeldurchmesser, min.: 3mm Gewindemaß - Metrisch: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 IP- / NEMA-Schutzart: IP66 Farbe d. Kabelverschraubung: Grey usEccn: EAR99 Kabeldurchmesser, max.: 6mm Produktpalette: - SVHC: No SVHC (14-Jun-2023) | auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG-2227-G | Bud Industries | Description: CABLE GLAND 3.05-6.1MM PG7 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG7 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.490" (12.4mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.240" (6.10mm) Outside Cable Diameter (Min): 0.120" (3.05mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 1601 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2227-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-7) .12 to .24" | auf Bestellung 1803 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22274-G | Bud Industries | Description: CABLE GLAND 3-6MM PG7 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG7 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.470" (11.9mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.240" (6.10mm) Outside Cable Diameter (Min): 0.120" (3.05mm) Thread Length: 0.590" (14.99mm) | auf Bestellung 3759 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22274-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-7) .12 to .24" | auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2229 | Bud Industries | Description: CABLE GLAND 4.06-7.87MM PG9 Packaging: Bulk Color: Black Material: Polyamide (PA), Nylon Thread Size: PG9 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.600" (15.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.310" (7.87mm) Outside Cable Diameter (Min): 0.160" (4.06mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2229 | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.16- 0.31" | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-2229-BPG | Bud Industries | Description: CABLE GLAND 4.1-7.9MM PG9 NYLON Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG9 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.600" (15.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.310" (7.87mm) Outside Cable Diameter (Min): 0.160" (4.06mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2229-BPG | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips CBL GLAND/BEND PROOF WIRE DIA 0.16- 0.31 | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-2229-G | Bud Industries | Description: CABLE GLAND 4.06-7.87MM PG9 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG9 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.600" (15.2mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Part Status: Active Outside Cable Diameter (Max): 0.310" (7.87mm) Outside Cable Diameter (Min): 0.160" (4.06mm) Thread Length: 0.320" (8.13mm) | auf Bestellung 9061 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-2229-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.16- 0.31" | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG-22294-G | Bud Industries | Description: CABLE GLAND 4.06-7.87MM PG9 Packaging: Bulk Color: Gray Material: Polyamide (PA), Nylon Thread Size: PG9 Type: Cable Gland Operating Temperature: -20°C ~ 65°C Panel Hole Size: 0.630" (16.0mm) Includes: Gasket Ingress Protection: IP66 - Dust Tight, Water Resistant Outside Cable Diameter (Max): 0.310" (7.87mm) Outside Cable Diameter (Min): 0.160" (4.06mm) Thread Length: 0.590" (14.99mm) | auf Bestellung 33424 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG-22294-G | Bud Industries | Cable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-9) .16 to .31" | auf Bestellung 10601 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG1-25828-1 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPG1-25828-3 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPG1-25828-6 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPG1-30037-1 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Number of Poles: 1 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG15N06S3L-45 | Infineon Technologies | Description: MOSFET 2N-CH 55V 15A TDSON-8 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S4-61 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 8373 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S4-61 Produktcode: 177704 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPG16N10S461AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9349 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461AATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | auf Bestellung 4455 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461AATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG16N10S461AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S461AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S461AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 Produktcode: 155670 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 19831 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 | INFINEON | Description: INFINEON - IPG16N10S461ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.053 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: TDSON Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.053ohm | auf Bestellung 4579 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | N-канальний ПТ; Udss, В = 100; Id = 16 А; Ciss, пФ @ Uds, В = 490 @ 25; Qg, нКл = 7; Rds = 61 @ 16 А; 10 В мОм; Ugs(th) = 3,5 В; Р, Вт = 29; Тексп, °C = -55...+175; Тип монт. = smd; PowerVDFN-8 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R | auf Bestellung 3875 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 | INFINEON | Description: INFINEON - IPG16N10S461ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.053 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: TDSON Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.053ohm | auf Bestellung 4579 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 14418 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R | auf Bestellung 3875 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 90µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | auf Bestellung 7190 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 16A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 90µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 14019 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG16N10S4L61AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG2-2020A5P167 | SICK, Inc. | Description: IP-HOUSING Packaging: Bulk For Use With/Related Products: Sensor Accessory Type: Pipe | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4-08 | Infineon Technologies | Description: IPG20N04 - 20V-40V N-CHANNEL AUT | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4-08 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 9871 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4-09 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 10000 Stücke: Lieferzeit 374-378 Tag (e) |
| ||||||||||||||||
IPG20N04S4-12 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 27816 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 322 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4071 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408ATMA1 | INFINEON | Description: INFINEON - IPG20N04S408ATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.007 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S408ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 65W Gate charge: 28nC Drain-source voltage: 40V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 On-state resistance: 7.6mΩ Drain current: 20A Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 14164 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408ATMA1 | INFINEON | Description: INFINEON - IPG20N04S408ATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.007 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 175°C productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm Anzahl der Pins: 8Pin(s) Dauer-Drainstrom Id, p-Kanal: 20A Dauer-Drainstrom Id, n-Kanal: 20A MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Produktpalette: OptiMOS T2 Series Bauform - Transistor: TDSON Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 65W Drain-Source-Spannung Vds: 40V Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 40V Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm Dauer-Drainstrom Id: 20A rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.007ohm Qualifizierungsstandard der Automobilindustrie: AEC-Q101 usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 65W SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 65W Gate charge: 28nC Drain-source voltage: 40V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 On-state resistance: 7.6mΩ Drain current: 20A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4998 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies | IPG20N04S408BATMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies | SP001200172 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 2900 Stücke: Lieferzeit 374-378 Tag (e) |
| ||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Description: MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W Mounting: SMD Case: PG-TDSON-8 Polarisation: unipolar Gate charge: 21.7nC Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 20A On-state resistance: 8.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 54W | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Description: MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W Mounting: SMD Case: PG-TDSON-8 Polarisation: unipolar Gate charge: 21.7nC Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 20A On-state resistance: 8.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 54W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Description: MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S409ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 460000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S412AATMA1 | INFINEON | Description: INFINEON - IPG20N04S412AATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.011 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.011ohm Verlustleistung, p-Kanal: 41W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 41W Betriebstemperatur, max.: 175°C | auf Bestellung 3927 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S412AATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 28559 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 28955 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S412AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S412ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N04S418AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 4V @ 8µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S418AATMA1 | Infineon Technologies | IPG20N04S418AATMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S418AATMA1 | Infineon Technologies | SP003127446 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S418AATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | auf Bestellung 4994 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L-07 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 3396 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L-08 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 16701 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L-11 | Infineon | auf Bestellung 105000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N04S4L-11 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 23360 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L-11A | Infineon Technologies | MOSFET MOSFET_(20V 40V) | auf Bestellung 3590 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L07AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07AATMA1 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | auf Bestellung 14651 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L07AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L07ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4230 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L08AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 39648 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L08ATMA1 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 13647 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | auf Bestellung 4830 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11AATMA1 Produktcode: 158575 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N04S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Case: PG-TDSON-8-4 Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 13069 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N04S4L11ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Case: PG-TDSON-8-4 Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L18AATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L18AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L18AATMA1 | Infineon Technologies | SP003127442 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N04S4L18AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 4770 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L-35 | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L-35AATMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L-50 | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | auf Bestellung 3557 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L-65 | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | auf Bestellung 4118 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 4850 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 14710 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L35ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S2L35ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 23580 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L35ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 23580 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L35ATMA1 | Infineon Technologies | IPG20N06S2L35ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 55V 20A Automotive 8-Pin TDSON EP T/R - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50AATMA1 | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | auf Bestellung 4998 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L50AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 13998 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L65AATMA1 | Infineon Technologies | MOSFET MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L65AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L65AAUMA1 | Infineon Technologies | IPG20N06S2L-65A | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65AAUMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 26886 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N06S2L65ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4265 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S2L65ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4265 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S2L65ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S2L65AUMA1 | Infineon Technologies | Description: MOSFET Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S3L-23 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 45W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Rds On (Max) @ Id, Vgs: 23mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S3L-35 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 30W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S3L23XT | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4-15 | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 2674 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6405 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S415AATMA1 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | auf Bestellung 663 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S415ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415ATMA2 | INFINEON | Description: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20 Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60 euEccn: NLR Bauform - Transistor: PG-TDSON Anzahl der Pins: 8 Produktpalette: OptiMOS -T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129 productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 50 Betriebstemperatur, max.: 175 SVHC: Lead (17-Jan-2023) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S415ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S415ATMA2 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 5858 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S415ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4679 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S415ATMA2 | INFINEON | Description: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20 Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60 euEccn: NLR Bauform - Transistor: PG-TDSON Anzahl der Pins: 8 Produktpalette: OptiMOS -T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129 productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 50 Betriebstemperatur, max.: 175 SVHC: Lead (17-Jan-2023) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S415ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L-11 | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 7055 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L-14 | Infineon | auf Bestellung 95092 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S4L-26 | Infineon | auf Bestellung 55000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S4L-26 | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 24070 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L-26A | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | auf Bestellung 14984 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11AATMA1 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | auf Bestellung 3056 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 1737 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 4714 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 42089 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11ATMA2 | Infineon Technologies | SP001404020 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L11ATMA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | auf Bestellung 5040 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L11ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L14AATMA1 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | auf Bestellung 2597 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L14AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 31287 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG20N06S4L14AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N06S4L14AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPG20N06S4L14AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L14ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L14ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L14ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L14ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9552 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L14ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L14ATMA2 | Infineon Technologies | MOSFET MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L14ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | auf Bestellung 2525 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2082 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26ATMA1 | INFINEON | Description: INFINEON - IPG20N06S4L26ATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.021 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 175°C productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Anzahl der Pins: 8Pin(s) Dauer-Drainstrom Id, p-Kanal: 20A Dauer-Drainstrom Id, n-Kanal: 20A MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Produktpalette: - Bauform - Transistor: TDSON Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 33W Drain-Source-Spannung Vds: 60V Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 60V Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm Dauer-Drainstrom Id: 20A rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.021ohm Qualifizierungsstandard der Automobilindustrie: AEC-Q101 usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 33W SVHC: No SVHC (17-Jan-2023) | auf Bestellung 19896 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 17312 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 85438 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N06S4L26ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | MOSFET N-CHANNEL 100+ | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S436AATMA1 | INFINEON | Description: INFINEON - IPG20N10S436AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.031 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.031ohm Verlustleistung, p-Kanal: 43W euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.031ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 37720 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S436AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S436AATMA1 | INFINEON | Description: INFINEON - IPG20N10S436AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.031 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.031ohm Verlustleistung, p-Kanal: 43W euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.031ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L-22 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L-22A | Infineon | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPG20N10S4L-22A | Infineon Technologies | MOSFET MOSFET_(75V 120V( | auf Bestellung 5065 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L-35 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 7950 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22AATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L22AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 60W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 60W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10429 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L22AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L22AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L22AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active | auf Bestellung 21797 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22AATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L22AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 60W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 60W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10429 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L22AATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | auf Bestellung 4278 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | auf Bestellung 11276 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L22ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 60W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 60W Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 54518 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 5557 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 6648 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L22ATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L22ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 60W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 60W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 51756 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L22ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35AATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L35AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 43W euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: Produktreihe OptiMOS T2 Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 3095 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35AATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35AATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L35AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 43W euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: Produktreihe OptiMOS T2 Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 37259 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35ATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L35ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 8114 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 80A Power dissipation: 43W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 31698 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35ATMA1 | INFINEON | Description: INFINEON - IPG20N10S4L35ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12273 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPG20N10S4L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
IPG20N10S4L35ATMA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 80A Power dissipation: 43W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPG6-27390-1 | Sensata Technologies/Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH11-20845-2-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH11-28676-25-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH11-30036-1-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Number of Poles: 2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH11-30036-7 | Sensata-Airpax | Description: CIR BRKR MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH111-25450-1-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH1111-23259-1-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 4 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH1111-28676-2-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 4 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH266-20628-2 | Sensata Technologies/Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH66-20788-1-V | Sensata Technologies/Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH66-20788-2-V | Sensata Technologies/Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH66-20788-3-V | Sensata Technologies/Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGH666-1REC4-23578-1-V | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Part Status: Active Number of Poles: 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGHB111-22761-1 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER Packaging: Bulk Mounting Type: Panel Mount Actuator Type: Lever Breaker Type: Magnetic (Hydraulic Delay) Number of Poles: 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPGHF666-32689-30 | Sensata-Airpax | Description: CIRCUIT BREAKER MAG-HYDR LEVER | Produkt ist nicht verfügbar | |||||||||||||||||
IPGSK-1316 | Sure-Seal | Description: GASKET CIRCULAR 13/16 10PK Packaging: Box Accessory Type: Gasket Part Status: Active | auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
|