Produkte > IPU
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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IPU039N03L | INF | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU039N03LAG | auf Bestellung 43200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPU039N03LGXK | Infineon Technologies | Description: MOSFET N-CH 30V 50A IPAK | auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU04N03LA | infineon | 05+ | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU04N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: P-TO251-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU04N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: P-TO251-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU04N03LAG | INFINEON | 07+ 251 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU04N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: P-TO251-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU050N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3-21 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU05N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU05N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU060N03L | INF | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU060N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU060N03LG | INFINEON | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU06N03LA | infineon | 03+ | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU06N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LA G (Transistor) Produktcode: 47339 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||
IPU06N03LAG | auf Bestellung 54300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPU06N03LAG | Infineon Technologies | MOSFET N-Ch 25V 50A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LAGBKMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LAGXK | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: P-TO251-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LANK | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LBG | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LZ | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LZ | INF | 07+; | auf Bestellung 76500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU06N03LZG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V | auf Bestellung 171000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU06N03LZG | Infineon Technologies | MOSFET N-Ch 25V 50A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU06N03LZNK | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU075N03L | INF | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU075N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU075N03LAG | auf Bestellung 25300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPU07N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: P-TO251-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU090N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 40A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LA | Infineon | 0339+ | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU09N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LA G | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LAG | INF | 07+; | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU09N03LAG | INF | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU09N03LAG | infineon | 06+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU09N03LAGBKMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LANK | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LB | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPU09N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU09N03LBG | auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPU103N08N3 G | Infineon Technologies | Description: MOSFET N-CH 80V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 46A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU103N80N3 | Infineon | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU105N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 35A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU10N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU10N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU10N03LANK | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU12N03L | infineon | 03+ | auf Bestellung 1451 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU135N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU135N08N3 G | Infineon Technologies | Description: MOSFET N-CH 80V 50A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU135N08N3G | Infineon | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU135N08N3GBKMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU13N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
IPU13N03LA | infineon | 03+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU13N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: P-TO251-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU13N03LA G | Infineon Technologies | MOSFET N-Ch 25V 30A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU13N03LAG | INFINEON | TO251 06+ | auf Bestellung 3800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU13N03LANK | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU20N03L G | Infineon Technologies | Description: MOSFET N-CH 30V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: P-TO251-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU3004 | IOR | O1 | auf Bestellung 75 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU50R1K4CE | Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | auf Bestellung 1280 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU50R1K4CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 3.1A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V | auf Bestellung 416723 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R1K4CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R1K4CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 3.1A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R1K4CEBKMA1 | Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | auf Bestellung 1319 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.1A Power dissipation: 25W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.1A Power dissipation: 25W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R1K4CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 3.1A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R2K0CE | Infineon Technologies | Description: N-CHANNEL POWER MOSFET CE Packaging: Bulk | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R2K0CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R2K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R2K0CEBKMA1 | Infineon Technologies | MOSFET N-Ch 500V 2.4A IPAK-3 | auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU50R2K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R3K0CE | Infineon Technologies | Description: N-CHANNEL POWER MOSFET CE Packaging: Bulk | auf Bestellung 250540 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R3K0CE | Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU50R3K0CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R3K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 1.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R3K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 1.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R3K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 1.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V | auf Bestellung 25539 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R950CE | Infineon Technologies | Trans MOSFET N-CH 500V 4.3A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU50R950CE | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | auf Bestellung 235740 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R950CE | Infineon Technologies | MOSFET N-Ch 500V 12.8A IPAK-3 | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU50R950CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | auf Bestellung 163349 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R950CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 500V 4.3A 3-Pin(3+Tab) TO-251 | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEAKMA2 | Infineon Technologies | Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEAKMA2 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEBKMA1 | Infineon Technologies | Trans MOSFET N-CH 500V 4.3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | auf Bestellung 34000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU50R950CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU50R950CEBTMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3-345 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V | auf Bestellung 4380 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R1K0CE | Infineon technologies | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU60R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R1K0CEAKMA2 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R1K0CEAKMA2 | Infineon Technologies | Description: MOSFET N-CH 600V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R1K0CEAKMA2 | Infineon Technologies | Trans MOSFET N-CH 600V 4.3A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU60R1K0CEBKMA1 | Infineon Technologies | MOSFET N-Ch 600V 4.3A IPAK-3 | auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K4C6 | Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K4C6 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO-251-3-341 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V | auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R1K4C6AKMA1 | Infineon Technologies | Description: PFET, 600V, 1.4OHM, 1-ELEMENT, N | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K4C6BKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R1K4C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.2A TO251-3 | auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K4C6BKMA1 | Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K5CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R1K5CEAKMA2 | Infineon Technologies | MOSFET CONSUMER | auf Bestellung 2971 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R1K5CEAKMA2 | Infineon Technologies | Description: MOSFET N-CH 600V 3.1A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R1K5CEBKMA1 | Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R1K5CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.1A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: TO-251 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K0C6 | Infineon Technologies | MOSFET N-Ch 650V 2.4A IPAK-3 | auf Bestellung 1351 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R2K0C6AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K0C6AKMA1 | Infineon Technologies | MOSFET | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R2K0C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | auf Bestellung 47296 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R2K0C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K0C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO-251 | auf Bestellung 1261 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R2K0C6BKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K1CE | Infineon technologies | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IPU60R2K1CEAKMA1 | INFINEON | Description: INFINEON - IPU60R2K1CEAKMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 3.7 A, 1.8 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 3.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 38W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS CE productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.8ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU60R2K1CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 3.7A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K1CEAKMA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R2K1CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | auf Bestellung 4389 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R2K1CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | auf Bestellung 6512 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R2K1CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R3K4CEAKMA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R3K4CEAKMA1 | Infineon Technologies | MOSFET | auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R3K4CEAKMA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V | auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU60R600C6 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R600C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 7.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R600C6AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R600C6BKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R600C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 7.3A TO251-3 | auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R950C6 | Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R950C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 4.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R950C6AKMA1 | Infineon Technologies | MOSFET LOW POWER_LEGACY | auf Bestellung 1265 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU60R950C6AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R950C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 4.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R950C6BKMA1 | Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU60R950C6BKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU64CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 17A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU78CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 13A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 12µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K0CE | Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | auf Bestellung 1356 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K0CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPU80R1K0CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | auf Bestellung 124500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K0CEBKMA1 | Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K0CEBKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced | auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K0CEBKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 948 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R1K2P7AKMA1 | Infineon Technologies | 800V CoolMOS P7 Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K2P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K2P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K2P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 443 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R1K2P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K2P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4.5A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V | auf Bestellung 1425 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4CEBKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V | auf Bestellung 19000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K4P7; 4A; 800V; 1,4R; 32W; N-канальный; Корпус: IPAK; INFINEON | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPU80R1K4P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1203 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1368 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R1K4P7AKMA1 | INFINEON | Description: INFINEON - IPU80R1K4P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 4 A, 1.2 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 32W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3540 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU80R1K4P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 1203 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7 | Infineon Technologies | Infineon LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7AKMA1 | INFINEON | Description: INFINEON - IPU80R2K0P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 3 A, 1.7 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 24W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU80R2K0P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R2K0P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K4P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1157 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R2K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K4P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: THT Gate charge: 8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 2.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V | auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R2K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K4P7AKMA1 | INFINEON | Description: INFINEON - IPU80R2K4P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 2.5 A, 2 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 22W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1234 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU80R2K4P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: THT Gate charge: 8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CE | Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V | auf Bestellung 14499 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R2K8CEBKMA1 Produktcode: 105297 | Infineon | Transistoren > MOSFET N-CH Uds,V: 800 V Idd,A: 1,9 A Rds(on), Ohm: 2,8 Ohm Ciss, pF/Qg, nC: 290/12 JHGF: THT ZCODE: 8541290010 | auf Bestellung 1 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IPU80R2K8CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CEBKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R2K8CEBKMA1 | Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R3K3P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R3K3P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R3K3P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R3K3P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R3K3P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R3K3P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R4K5P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R4K5P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R4K5P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 2.6A Power dissipation: 13W Case: IPAK Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 1469 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R4K5P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Power Dissipation (Max): 13W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V | auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R4K5P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R4K5P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 2.6A Power dissipation: 13W Case: IPAK Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R4K5P7AKMA1 | INFINEON | Description: INFINEON - IPU80R4K5P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 1.5 A, 3.8 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 13W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.8ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 806 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU80R4K5P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R4K5P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R600P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R600P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R600P7AKMA1 | Infineon Technologies | 800V CoolMOS P7 Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R600P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R600P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R600P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R600P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 8A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V | auf Bestellung 1456 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R750P7 | Infineon Technologies | Infineon LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | Infineon Technologies | 800V CoolMOS P7 Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R750P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R750P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1498 Stücke: Lieferzeit 129-133 Tag (e) |
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IPU80R750P7AKMA1-ND | Infineon Technologies | Description: COOLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO-251-3-341 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V | auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R900P7AKMA1 | INFINEON | Description: INFINEON - IPU80R900P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 6 A, 0.77 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.77ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R900P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R900P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R900P7AKMA1 | Infineon Technologies | P7 Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R900P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 110µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V | auf Bestellung 1485 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R900P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 344 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU95R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 6A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R1K2P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V | auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R1K2P7AKMA1 | INFINEON TECHNOLOGIES | IPU95R1K2P7 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R1K2P7AKMA1 | INFINEON | Description: INFINEON - IPU95R1K2P7AKMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pins Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.03ohm | auf Bestellung 1748 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU95R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R1K2P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1282 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R2K0P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK Type of transistor: N-MOSFET Case: IPAK Mounting: THT Power dissipation: 37W Technology: CoolMOS™ P7 Features of semiconductor devices: ESD protected gate Kind of package: tube Gate charge: 10nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 950V On-state resistance: 2Ω Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1271 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU95R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R2K0P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 3000 Stücke: Lieferzeit 610-614 Tag (e) |
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IPU95R2K0P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK Type of transistor: N-MOSFET Case: IPAK Mounting: THT Power dissipation: 37W Technology: CoolMOS™ P7 Features of semiconductor devices: ESD protected gate Kind of package: tube Gate charge: 10nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 950V On-state resistance: 2Ω Gate-source voltage: ±20V | auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R2K0P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R3K7P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R3K7P7AKMA1 | INFINEON | Description: INFINEON - IPU95R3K7P7AKMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 2 A, 3.11 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 22W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.11ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1154 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU95R3K7P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 2A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R3K7P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V | auf Bestellung 797 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R3K7P7AKMA1 | INFINEON TECHNOLOGIES | IPU95R3K7P7 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R3K7P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1255 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R450P7 | Infineon Technologies | Infineon LOW POWER_NEW | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R450P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R450P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 14A TO251-3 | auf Bestellung 972 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R450P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK Mounting: THT Drain-source voltage: 950V Drain current: 8.6A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 35nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: IPAK Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R450P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R450P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R450P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK Mounting: THT Drain-source voltage: 950V Drain current: 8.6A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 35nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: IPAK | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R450P7AKMA1 | INFINEON | Description: INFINEON - IPU95R450P7AKMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 14 A, 0.38 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 104W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pins Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm | auf Bestellung 1358 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU95R450P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R750P7AKMA1 | INFINEON | Description: INFINEON - IPU95R750P7AKMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 9 A, 0.64 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 73W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.64ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IPU95R750P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 2332 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R750P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R750P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 9A TO251-3 | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R750P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK Mounting: THT Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: IPAK Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IPU95R750P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 2274 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R750P7AKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK Mounting: THT Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: IPAK Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
IPUH6N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A IPAK | Produkt ist nicht verfügbar | |||||||||||||||
IPUH6N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB-180029-01A | ITT Cannon, LLC | Description: CUSTOM IPUSB | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-180029-02A | ITT Cannon, LLC | Description: CUSTOM IPUSB | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2AABHD | ITT Cannon, LLC | Description: ADAPTER USB A RCPT TO USB A RCPT Packaging: Bulk Mounting Type: Panel Mount, Bulkhead - Front Side Nut Convert From (Adapter End): USB-A (USB TYPE-A), Receptacle Convert To (Adapter End): USB-A (USB TYPE-A), Receptacle Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB-2BABHD | ITT Cannon, LLC | Description: ADAPTER USB B RCPT TO USB A RCPT Packaging: Bulk Mounting Type: Panel Mount, Bulkhead - Front Side Nut Convert From (Adapter End): USB-B (USB TYPE-B), Receptacle Convert To (Adapter End): USB-A (USB TYPE-A), Receptacle Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB-2JAFL | PEI-Genesis | Description: JACK, PNL USB W 2.0 A/0.5M FL | auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2JAFL | ITT Cannon, LLC | Description: JACK, PNL USB W 2.0 A/0.5M FL | auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2JAPC | Sure-Seal | Description: JACK, PNL USB W 2.0 A/PC TAIL Packaging: Box Features: Circular Threaded Coupling Voltage - Rated: 30V Number of Contacts: 4 Connector Type: USB-A (USB TYPE-A) Gender: Receptacle Current Rating (Amps): 1.5A Mounting Type: Panel Mount, Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 80°C Specifications: USB 2.0 Termination: Solder Ingress Protection: IP67 - Dust Tight, Waterproof Mounting Feature: Bulkhead - Front Side Nut; Vertical Mating Cycles: 1000 Part Status: Active Number of Ports: 1 | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB-2JBFL | PEI-Genesis | Description: JACK, PNL USB W 2.0 B/0.5M FL | auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2JBPC | Sure-Seal | Description: JACK, PNL USB W 2.0 B/PC TAIL Features: Circular Threaded Coupling Packaging: Box Voltage - Rated: 30V Number of Contacts: 4 Connector Type: USB-B (USB TYPE-B) Gender: Receptacle Current Rating (Amps): 1.5A Mounting Type: Panel Mount, Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 80°C Specifications: USB 2.0 Termination: Solder Ingress Protection: IP67 - Dust Tight, Waterproof Mounting Feature: Bulkhead - Front Side Nut; Vertical Mating Cycles: 1000 Part Status: Active Number of Ports: 1 | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB-2WJAPA-05M | PEI-Genesis | Description: CA, USB A W PNL / A STD 0.5M | auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJAPA-1M | ITT Cannon, LLC | Description: CA, USB A W PNL / A STD 1M | auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJAPA-1M | PEI-Genesis | Description: CA, USB A W PNL / A STD 1M | auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJAPA-3M | PEI-Genesis | Description: CA, USB A W PNL / A STD 3M | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJAPA-5M | ITT Cannon, LLC | Description: CA, USB A W PNL / A STD 5M Features: Data Transfer and Charge, Industrial Environments - IP67, Panel Mount Packaging: Bulk Color: Black Length: 16.40' (5.00m) Wire Gauge: 24 AWG, 28 AWG Shielding: Shielded Configuration: A Female to A Male (Circular Coupling) Specifications: USB 2.0 Transfer Rate: 480Mbps | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB-2WJBPA-05M | ITT Cannon, LLC | Description: CA, USB B W PNL / A STD 0.5M | auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-05M | PEI-Genesis | Description: CA, USB B W PNL / A STD 0.5M | auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-1M | ITT Cannon, LLC | Description: CA, USB B W PNL / A STD 1M | auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-1M | PEI-Genesis | Description: CA, USB B W PNL / A STD 1M | auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-2M | PEI-Genesis | Description: CA, USB B W PNL / A STD 2M | auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-2M | ITT Cannon, LLC | Description: CA, USB B W PNL / A STD 2M | auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WJBPA-3M | PEI-Genesis | Description: CA, USB B W PNL / A STD 3M | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAPB-1M | ITT Cannon, LLC | Description: CA, USB AP W / B STD 1M | auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAPB-1M | PEI-Genesis | Description: CA, USB AP W / B STD 1M | auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAPB-2M | PEI-Genesis | Description: CA, USB AP W / B STD 2M | auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAPB-2M | ITT Cannon, LLC | Description: CA, USB AP W / B STD 2M | auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAWPB-1M | PEI-Genesis | Description: CA, USB AP W / BP W 1M | auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAWPB-1M | ITT Cannon, LLC | Description: CA, USB AP W / BP W 1M | auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAWPB-2M | ITT Cannon, LLC | Description: CA, USB AP W / BP W 2M | auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPAWPB-2M | PEI-Genesis | Description: CA, USB AP W / BP W 2M | auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPBPB-1M | ITT Cannon, LLC | Description: CA, USB BP W / B STD 1M | auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPBPB-1M | PEI-Genesis | Description: CA, USB BP W / B STD 1M | auf Bestellung 247 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPBPB-2M | ITT Cannon, LLC | Description: CA, USB BP W / B STD 2M | auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPBPB-2M | PEI-Genesis | Description: CA, USB BP W / B STD 2M | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-2WPBPB-5M | PEI-Genesis | Description: CA, USB BP W / B STD 5M | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSB-31JCPC | Sure-Seal | Description: JACK, PNL USB W 3.1 A/PC TAIL Features: Circular Bayonet Coupling Packaging: Box Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Mounting Type: Panel Mount, Through Hole Shielding: Unshielded Operating Temperature: -40°C ~ 85°C Specifications: USB 3.2 Gen 2 (USB 3.1 Gen 2, Superspeed + (USB 3.1)) Termination: Solder Ingress Protection: IP67 - Dust Tight, Waterproof Mounting Feature: Bulkhead - Front Side Nut; Vertical Part Status: Active Number of Ports: 1 | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB1CS | Phihong USA | Description: CBL A PLUG TO MINI B PLUG 4.92' Packaging: Box Color: Black Length: 4.92' (1.50m) Configuration: A Male to Mini B Male Part Status: Active | auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1CS-RW | Phihong | USB Cables / IEEE 1394 Cables USBA to Mini-B USB USB Cable 1.5M | auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1M5LD-R | Phihong USA | Description: CABLE A PLUG TO MCR B PLUG 4.92' | auf Bestellung 7278 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1M5LD-RW | Phihong | USB Cables / IEEE 1394 Cables USBA to MicroB 24AWG Low Drop 1.5 meter | auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1M5LD-RW Produktcode: 183208 | Kabel, Draht, Flachbandkabel, Netzkabel > Kabel | Produkt ist nicht verfügbar | ||||||||||||||||
IPUSB1MS | Phihong USA | Description: CABLE A PLUG TO MCR B PLUG 4.92' Packaging: Box Color: Black Length: 4.92' (1.50m) Configuration: A Male to Micro B Male | auf Bestellung 8614 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1MS-RW | Phihong | USB Cables / IEEE 1394 Cables USBA to Micro-B USB USB Cable 1.5M | auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1MSW | Phihong USA | Description: USB CABLE A TO MICRO B 1.5M WHT | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB1MSW | Phihong | USB Cables / IEEE 1394 Cables USBA to Micro B USB Cable 1.5m white | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB1P5 | Phihong USA | Description: CABLE A PLUG TO MCR B PLUG 4.92' Packaging: Bulk Color: Black Length: 4.92' (1.50m) Configuration: A Male to Micro B Male | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB1P5-RW | Phihong | USB Cables / IEEE 1394 Cables USBA to Micro B USB Cable 1.5m AWG24 blk | auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSB1P5W | Phihong USA | Description: CABLE A PLUG TO MCR B PLUG 4.92' Packaging: Bulk Color: Black Length: 4.92' (1.50m) Configuration: A Male to Micro B Male | Produkt ist nicht verfügbar | |||||||||||||||
IPUSB1P5W | Phihong | USB Cables / IEEE 1394 Cables USBA to Micro B USB Cable 1.5m AWG24 wht | Produkt ist nicht verfügbar | |||||||||||||||
IPUSBM-2AABHD | ITT Cannon, LLC | Description: ADAPTER USB A RCPT TO USB A RCPT Packaging: Bulk Mounting Type: Panel Mount, Bulkhead - Front Side Nut Convert From (Adapter End): USB-A (USB TYPE-A), Receptacle Convert To (Adapter End): USB-A (USB TYPE-A), Receptacle Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
IPUSBM-2ASTB | Sure-Seal | Description: JACK PNL USB 2.0 A MTL / STB Packaging: Box Features: Circular Threaded Coupling Voltage - Rated: 30V Number of Contacts: 4 Connector Type: USB-A (USB TYPE-A) Gender: Receptacle Current Rating (Amps): 1.5A Mounting Type: Panel Mount Shielding: Unshielded Operating Temperature: -20°C ~ 80°C Specifications: USB 2.0 Termination: Terminal Block Ingress Protection: IP67 - Dust Tight, Waterproof Mounting Feature: Bulkhead - Front Side Nut; Vertical Mating Cycles: 1000 Part Status: Active Number of Ports: 1 | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSBM-2JAFL | Sure-Seal | Description: CBL USB2.0 A RCPT-OPEN W/COUPL | auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2JAPC | Sure-Seal | Description: JACK PNL USB 2.0 A MTL/PC TAIL Packaging: Box Features: Circular Threaded Coupling Voltage - Rated: 30V Number of Contacts: 4 Connector Type: USB-A (USB TYPE-A) Gender: Receptacle Current Rating (Amps): 1.5A Mounting Type: Panel Mount, Through Hole Shielding: Unshielded Operating Temperature: -40°C ~ 85°C Specifications: USB 2.0 Termination: Solder Ingress Protection: IP67 - Dust Tight, Waterproof Mounting Feature: Bulkhead - Front Side Nut; Vertical Mating Cycles: 1000 Part Status: Active Number of Ports: 1 | auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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IPUSBM-2WJAPA-05M | Sure-Seal | Description: CBL USB2.0 A RCPT-A PLUG W/COUPL | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WJAPA-1M | Sure-Seal | Description: CBL USB2.0 A RCPT-A PLUG W/COUPL | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WJAPA-2M | PEI-Genesis | Description: CA, USB A PNL MTL / A STD 2M | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WJAPA-2M | ITT Cannon, LLC | Description: CA, USB A PNL MTL / A STD 2M | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WJAPA-3M | PEI-Genesis | Description: CA, USB A PNL MTL / A STD 3M | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WJAPA-5M | Sure-Seal | Description: CBL USB2.0 A RCPT-A PLUG W/COUPL | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAPB-1M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAPB-2M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAPB-5M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAWPB-1M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAWPB-2M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IPUSBM-2WPAWPB-5M | Sure-Seal | Description: CBL USB2.0 A PLUG-B PLUG W/COUPL | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |