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B2D20065H1 B2D20065H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA1EFBEB21E93E0D3&compId=B2D20065H1.pdf?ci_sign=3f7130369d03a0e405cfbe19a8192968486d052c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.62 EUR
15+5.05 EUR
19+3.88 EUR
20+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065H1 B2D20065H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA1EFBEB21E93E0D3&compId=B2D20065H1.pdf?ci_sign=3f7130369d03a0e405cfbe19a8192968486d052c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.62 EUR
15+5.05 EUR
19+3.88 EUR
20+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 B2D20065HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84C6F7D7C200D2&compId=B2D20065HC1.pdf?ci_sign=d9d03831b0695c8387f9193ed0da42ce5eb3b37e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.62 EUR
18+4.06 EUR
19+3.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 B2D20065HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84C6F7D7C200D2&compId=B2D20065HC1.pdf?ci_sign=d9d03831b0695c8387f9193ed0da42ce5eb3b37e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.62 EUR
18+4.06 EUR
19+3.85 EUR
150+3.75 EUR
600+3.7 EUR
Mindestbestellmenge: 13
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B2D20065K1 B2D20065K1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF812E876BF640D4&compId=B2D20065K1.pdf?ci_sign=8b5226dfbf0093784f47eca6bdc9a4f5cb95ea40 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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B2D20065TF B2D20065TF BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84EAF4FEB3A0D2&compId=B2D20065TF.pdf?ci_sign=7faef75d967d88e2d11712941bd33c77327e625a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
20+3.6 EUR
30+3.58 EUR
Mindestbestellmenge: 18
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B2D20065TF B2D20065TF BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84EAF4FEB3A0D2&compId=B2D20065TF.pdf?ci_sign=7faef75d967d88e2d11712941bd33c77327e625a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.06 EUR
20+3.6 EUR
30+3.58 EUR
Mindestbestellmenge: 18
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B2D20120F1 B2D20120F1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBA875B859580D2&compId=B2D20120F1.pdf?ci_sign=b1f92f48404f256f8dae64c0102f2808dab8d7a7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Produkt ist nicht verfügbar
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B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBB1744AD29C0D2&compId=B2D20120H1.pdf?ci_sign=9996b158ed0f0661fafedcb227755d043c3cb319 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
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B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBB1744AD29C0D2&compId=B2D20120H1.pdf?ci_sign=9996b158ed0f0661fafedcb227755d043c3cb319 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
150+4.52 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120HC1 B2D20120HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84CDECC7A560D2&compId=B2D20120HC1.pdf?ci_sign=7ef6b9f7b4e3dfac520a94a47c61277ac8e0cdd9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120HC1 B2D20120HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84CDECC7A560D2&compId=B2D20120HC1.pdf?ci_sign=7ef6b9f7b4e3dfac520a94a47c61277ac8e0cdd9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
150+4.38 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D30065H1 BASiC SEMICONDUCTOR B2D30065H1 THT Schottky diodes
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.52 EUR
11+6.54 EUR
Mindestbestellmenge: 8
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B2D30065HC1 BASiC SEMICONDUCTOR B2D30065HC1 THT Schottky diodes
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.89 EUR
13+5.51 EUR
Mindestbestellmenge: 9
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B2D30120H1 B2D30120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD33CF1371400D4&compId=B2D30120H1.pdf?ci_sign=3e5f4686db216ef232c83cfa22c4a14232a09301 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.69 EUR
7+10.34 EUR
8+9.77 EUR
Mindestbestellmenge: 6
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B2D30120H1 B2D30120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD33CF1371400D4&compId=B2D30120H1.pdf?ci_sign=3e5f4686db216ef232c83cfa22c4a14232a09301 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.69 EUR
7+10.34 EUR
8+9.77 EUR
30+9.74 EUR
Mindestbestellmenge: 6
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B2D30120HC1 B2D30120HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84D7211E0640D2&compId=B2D30120HC1.pdf?ci_sign=4283c8b23356ac0f9d48f687212f9ca29a232644 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.5 EUR
10+7.45 EUR
11+7.05 EUR
Mindestbestellmenge: 7
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B2D30120HC1 B2D30120HC1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84D7211E0640D2&compId=B2D30120HC1.pdf?ci_sign=4283c8b23356ac0f9d48f687212f9ca29a232644 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.5 EUR
10+7.45 EUR
11+7.05 EUR
150+6.99 EUR
600+6.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
B2D40065H1 BASiC SEMICONDUCTOR B2D40065H1 THT Schottky diodes
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.11 EUR
8+9.44 EUR
30+9.37 EUR
Mindestbestellmenge: 6
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B2D40120H1 BASiC SEMICONDUCTOR B2D40120H1 THT Schottky diodes
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.89 EUR
5+14.34 EUR
6+13.57 EUR
30+13.48 EUR
Mindestbestellmenge: 4
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B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1 THT Schottky diodes
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.73 EUR
8+9.44 EUR
Mindestbestellmenge: 5
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B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC995F9210C0D5&compId=B2D60120H1.pdf?ci_sign=a79feabe1bc83a0b768a3cf6a1d58dacb379e46e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.3 EUR
10+16.2 EUR
Mindestbestellmenge: 4
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B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC995F9210C0D5&compId=B2D60120H1.pdf?ci_sign=a79feabe1bc83a0b768a3cf6a1d58dacb379e46e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.3 EUR
10+16.2 EUR
30+15.66 EUR
Mindestbestellmenge: 4
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B2M032120Y B2M032120Y BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84BCAD4237CA60D6&compId=B2M032120Y.pdf?ci_sign=1e5850dfec555eb311743ad15e73b4d072ace078 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.52 EUR
5+14.69 EUR
Mindestbestellmenge: 4
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B2M032120Y B2M032120Y BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84BCAD4237CA60D6&compId=B2M032120Y.pdf?ci_sign=1e5850dfec555eb311743ad15e73b4d072ace078 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
4+20.52 EUR
5+14.69 EUR
Mindestbestellmenge: 4
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B2M065120H BASiC SEMICONDUCTOR B2M065120H THT N channel transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.99 EUR
7+10.42 EUR
8+9.85 EUR
Mindestbestellmenge: 6
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B2M065120R B2M065120R BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.62 EUR
7+10.24 EUR
Mindestbestellmenge: 5
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B2M065120R B2M065120R BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.62 EUR
7+10.24 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.48 EUR
8+9.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.48 EUR
8+9.58 EUR
30+9.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.11 EUR
8+10.01 EUR
10+8.85 EUR
30+7.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.11 EUR
8+10.01 EUR
10+8.85 EUR
30+7.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
150+9.97 EUR
600+9.88 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.24 EUR
30+10.81 EUR
150+10.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Collector current: 50A
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Collector current: 50A
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.01 EUR
7+10.81 EUR
30+9.55 EUR
150+9.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Gate charge: 398nC
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.77 EUR
7+11.55 EUR
10+10.21 EUR
30+9.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Gate charge: 398nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.77 EUR
7+11.55 EUR
10+10.21 EUR
30+9.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.54 EUR
30+12.8 EUR
150+10.72 EUR
600+10.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA1EFBEB21E93E0D3&compId=B2D20065H1.pdf?ci_sign=3f7130369d03a0e405cfbe19a8192968486d052c
B2D20065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
15+5.05 EUR
19+3.88 EUR
20+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA1EFBEB21E93E0D3&compId=B2D20065H1.pdf?ci_sign=3f7130369d03a0e405cfbe19a8192968486d052c
B2D20065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.62 EUR
15+5.05 EUR
19+3.88 EUR
20+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84C6F7D7C200D2&compId=B2D20065HC1.pdf?ci_sign=d9d03831b0695c8387f9193ed0da42ce5eb3b37e
B2D20065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
18+4.06 EUR
19+3.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84C6F7D7C200D2&compId=B2D20065HC1.pdf?ci_sign=d9d03831b0695c8387f9193ed0da42ce5eb3b37e
B2D20065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.62 EUR
18+4.06 EUR
19+3.85 EUR
150+3.75 EUR
600+3.7 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065K1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF812E876BF640D4&compId=B2D20065K1.pdf?ci_sign=8b5226dfbf0093784f47eca6bdc9a4f5cb95ea40
B2D20065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065TF pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84EAF4FEB3A0D2&compId=B2D20065TF.pdf?ci_sign=7faef75d967d88e2d11712941bd33c77327e625a
B2D20065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.6 EUR
30+3.58 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065TF pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84EAF4FEB3A0D2&compId=B2D20065TF.pdf?ci_sign=7faef75d967d88e2d11712941bd33c77327e625a
B2D20065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.6 EUR
30+3.58 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120F1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBA875B859580D2&compId=B2D20120F1.pdf?ci_sign=b1f92f48404f256f8dae64c0102f2808dab8d7a7
B2D20120F1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBB1744AD29C0D2&compId=B2D20120H1.pdf?ci_sign=9996b158ed0f0661fafedcb227755d043c3cb319
B2D20120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBB1744AD29C0D2&compId=B2D20120H1.pdf?ci_sign=9996b158ed0f0661fafedcb227755d043c3cb319
B2D20120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
150+4.52 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84CDECC7A560D2&compId=B2D20120HC1.pdf?ci_sign=7ef6b9f7b4e3dfac520a94a47c61277ac8e0cdd9
B2D20120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84CDECC7A560D2&compId=B2D20120HC1.pdf?ci_sign=7ef6b9f7b4e3dfac520a94a47c61277ac8e0cdd9
B2D20120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
150+4.38 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D30065H1
Hersteller: BASiC SEMICONDUCTOR
B2D30065H1 THT Schottky diodes
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.52 EUR
11+6.54 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
B2D30065HC1
Hersteller: BASiC SEMICONDUCTOR
B2D30065HC1 THT Schottky diodes
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.89 EUR
13+5.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
B2D30120H1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD33CF1371400D4&compId=B2D30120H1.pdf?ci_sign=3e5f4686db216ef232c83cfa22c4a14232a09301
B2D30120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.69 EUR
7+10.34 EUR
8+9.77 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2D30120H1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD33CF1371400D4&compId=B2D30120H1.pdf?ci_sign=3e5f4686db216ef232c83cfa22c4a14232a09301
B2D30120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.69 EUR
7+10.34 EUR
8+9.77 EUR
30+9.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2D30120HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84D7211E0640D2&compId=B2D30120HC1.pdf?ci_sign=4283c8b23356ac0f9d48f687212f9ca29a232644
B2D30120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.5 EUR
10+7.45 EUR
11+7.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
B2D30120HC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8C84D7211E0640D2&compId=B2D30120HC1.pdf?ci_sign=4283c8b23356ac0f9d48f687212f9ca29a232644
B2D30120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.5 EUR
10+7.45 EUR
11+7.05 EUR
150+6.99 EUR
600+6.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
B2D40065H1
Hersteller: BASiC SEMICONDUCTOR
B2D40065H1 THT Schottky diodes
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.11 EUR
8+9.44 EUR
30+9.37 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2D40120H1
Hersteller: BASiC SEMICONDUCTOR
B2D40120H1 THT Schottky diodes
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.89 EUR
5+14.34 EUR
6+13.57 EUR
30+13.48 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2D40120HC1
Hersteller: BASiC SEMICONDUCTOR
B2D40120HC1 THT Schottky diodes
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.73 EUR
8+9.44 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
B2D60120H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC995F9210C0D5&compId=B2D60120H1.pdf?ci_sign=a79feabe1bc83a0b768a3cf6a1d58dacb379e46e
B2D60120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.3 EUR
10+16.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2D60120H1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC995F9210C0D5&compId=B2D60120H1.pdf?ci_sign=a79feabe1bc83a0b768a3cf6a1d58dacb379e46e
B2D60120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.3 EUR
10+16.2 EUR
30+15.66 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2M032120Y pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84BCAD4237CA60D6&compId=B2M032120Y.pdf?ci_sign=1e5850dfec555eb311743ad15e73b4d072ace078
B2M032120Y
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.52 EUR
5+14.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2M032120Y pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84BCAD4237CA60D6&compId=B2M032120Y.pdf?ci_sign=1e5850dfec555eb311743ad15e73b4d072ace078
B2M032120Y
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+20.52 EUR
5+14.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120H
Hersteller: BASiC SEMICONDUCTOR
B2M065120H THT N channel transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.99 EUR
7+10.42 EUR
8+9.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120R pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0
B2M065120R
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.62 EUR
7+10.24 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120R pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0
B2M065120R
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.62 EUR
7+10.24 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
8+9.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.48 EUR
8+9.58 EUR
30+9.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF
BGH40N120HF
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.11 EUR
8+10.01 EUR
10+8.85 EUR
30+7.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Collector current: 40A
Case: TO247-3
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.11 EUR
8+10.01 EUR
10+8.85 EUR
30+7.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
150+9.97 EUR
600+9.88 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.24 EUR
30+10.81 EUR
150+10.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Collector current: 50A
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Collector current: 50A
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.01 EUR
7+10.81 EUR
30+9.55 EUR
150+9.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Gate charge: 398nC
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.77 EUR
7+11.55 EUR
10+10.21 EUR
30+9.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Gate charge: 398nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.77 EUR
7+11.55 EUR
10+10.21 EUR
30+9.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd
BGH75N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.54 EUR
30+12.8 EUR
150+10.72 EUR
600+10.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTD21520SAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTD21520SBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOP16
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Number of channels: 2
Supply voltage: 3...18V DC
Case: SOW14
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...4A
Insulation voltage: 5kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW8
Output current: 10A
Number of channels: 1
Supply voltage: 3...18V DC
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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