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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| B3DM100120N | BASiC SEMICONDUCTOR |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227 Max. forward impulse current: 700A Electrical mounting: screw Max. load current: 600A Mechanical mounting: screw Technology: SiC Features of semiconductor devices: Schottky Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3M025065L | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL Mounting: SMD Case: TOLL Kind of package: reel; tape Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -5...18V Gate charge: 98nC On-state resistance: 25mΩ Power dissipation: 375W Drain-source voltage: 650V Drain current: 76A Pulsed drain current: 166A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3M040120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 44A Pulsed drain current: 108A Power dissipation: 300W Case: TO263-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Collector current: 40A |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 476ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 443ns Gate-emitter voltage: ±20V Power dissipation: 568W Collector current: 75A Pulsed collector current: 200A Collector-emitter voltage: 1.2kV Technology: Field Stop; SiC SBD; Trench Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 140ns Gate charge: 398nC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-3 Mounting: THT Gate charge: 444nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 104ns Turn-off time: 376ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-4 Mounting: THT Gate charge: 444nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 84ns Turn-off time: 565ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Type of integrated circuit: driver Case: SOP8 Mounting: SMD Kind of integrated circuit: gate driver; low-side Kind of output: non-inverting Kind of package: reel; tape Operating temperature: -40...140°C Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC |
auf Bestellung 2343 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTP3843DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Case: SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Kind of package: reel; tape Mounting: SMD Operating temperature: 0...70°C Output current: 1A Frequency: 0.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTP3844DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTP3845DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTP3845DSR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: MSOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| B3DM100120N |
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Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B3M025065L |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B3M040120R |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGH40N120HF |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 11.15 EUR |
| 8+ | 10.05 EUR |
| 10+ | 8.89 EUR |
| 30+ | 7.98 EUR |
| BGH50N65HF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.93 EUR |
| 6+ | 13.51 EUR |
| 30+ | 11.9 EUR |
| BGH50N65HS1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.24 EUR |
| 30+ | 10.81 EUR |
| BGH50N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.01 EUR |
| 7+ | 10.81 EUR |
| BGH75N120HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 443ns
Gate-emitter voltage: ±20V
Power dissipation: 568W
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 140ns
Gate charge: 398nC
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 443ns
Gate-emitter voltage: ±20V
Power dissipation: 568W
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 140ns
Gate charge: 398nC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| BGH75N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH75N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.54 EUR |
| BTD21520EAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTL27524R |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Case: SOP8
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Case: SOP8
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 71+ | 1.02 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| BTP3843DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTP3844DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTP3845DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTP3845DSR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
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