Produkte > BASIC SEMICONDUCTOR > Alle Produkte des Herstellers BASIC SEMICONDUCTOR (78) > Seite 2 nach 2
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
BGH50N65HF1 | BASiC SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench Anzahl je Verpackung: 1 Stücke |
auf Bestellung 57 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
 |
BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 476ns Technology: Field Stop; SiC SBD; Trench |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 476ns Technology: Field Stop; SiC SBD; Trench Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| BGH75N120HF1 | BASiC SEMICONDUCTOR | BGH75N120HF1 THT IGBT transistors |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
|
BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-3 Mounting: THT Gate charge: 444nC Kind of package: tube Turn-off time: 376ns Turn-on time: 104ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-4 Mounting: THT Gate charge: 444nC Kind of package: tube Turn-off time: 565ns Turn-on time: 84ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-4 Mounting: THT Gate charge: 444nC Kind of package: tube Turn-off time: 565ns Turn-on time: 84ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
 |
BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Case: SOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...140°C Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver Kind of output: non-inverting |
auf Bestellung 2344 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Case: SOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...140°C Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver Kind of output: non-inverting Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2344 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| BTP3843DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Case: SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Kind of package: reel; tape Mounting: SMD Operating temperature: 0...70°C Output current: 1A Frequency: 0.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTP3845DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTP3845DSR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: MSOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BGH40N120HF |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.14 EUR |
| 8+ | 10.05 EUR |
| 10+ | 8.88 EUR |
| 30+ | 7.98 EUR |
| BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.14 EUR |
| 8+ | 10.05 EUR |
| 10+ | 8.88 EUR |
| 30+ | 7.98 EUR |
| BGH50N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.93 EUR |
| 6+ | 13.51 EUR |
| 30+ | 11.9 EUR |
| BGH50N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.93 EUR |
| 6+ | 13.51 EUR |
| 30+ | 11.9 EUR |
| 150+ | 9.97 EUR |
| 600+ | 9.88 EUR |
| BGH50N65HS1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.32 EUR |
| 6+ | 13.77 EUR |
| 30+ | 12.17 EUR |
| BGH50N65HS1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.32 EUR |
| 6+ | 13.77 EUR |
| 30+ | 12.17 EUR |
| 150+ | 10.4 EUR |
| BGH50N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.16 EUR |
| BGH50N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.16 EUR |
| 30+ | 10.75 EUR |
| 150+ | 9.3 EUR |
| BGH75N120HF1 |
Hersteller: BASiC SEMICONDUCTOR
BGH75N120HF1 THT IGBT transistors
BGH75N120HF1 THT IGBT transistors
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 14.13 EUR |
| 8+ | 9.58 EUR |
| BGH75N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH75N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.54 EUR |
| BGH75N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.54 EUR |
| 30+ | 12.8 EUR |
| 150+ | 10.72 EUR |
| 600+ | 10.71 EUR |
| BTL27524R |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 71+ | 1.02 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| BTL27524R |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2344 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 71+ | 1.02 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| BTP3843DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTP3845DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTP3845DSR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2