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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| B3D120040HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 0.3kA Power dissipation: 417W Kind of package: tube Max. load current: 120A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape Power dissipation: 187W Case: TO263-3 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube Power dissipation: 268W Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 150A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube Power dissipation: 227W Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube Power dissipation: 65W Case: TO3PF Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 75A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20120F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward impulse current: 160A Kind of package: reel; tape Power dissipation: 273W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 160A Kind of package: tube Power dissipation: 259W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D20120HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 90A Kind of package: tube Power dissipation: 167W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3D60120H2 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W Power dissipation: 938W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 540A Load current: 60A Max. off-state voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3DM060065N | BASiC SEMICONDUCTOR |
 Category: Diode modulesDescription: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Max. off-state voltage: 650V Electrical mounting: screw Load current: 60A x2 Max. load current: 360A Kind of package: tube Semiconductor structure: double independent Case: SOT227 Max. forward impulse current: 420A Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| B3M040120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 44A Pulsed drain current: 108A Power dissipation: 300W Case: TO263-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 476ns Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Collector current: 75A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 568W Gate charge: 398nC Technology: Field Stop; SiC SBD; Trench Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO247-3 Turn-off time: 443ns Gate-emitter voltage: ±20V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 104ns Turn-off time: 376ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 405W Gate charge: 444nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-4 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 84ns Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 405W Gate charge: 444nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520EBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520MBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BTD21520SBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Operating temperature: -40...140°C Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Kind of package: reel; tape Case: SOP8 Kind of integrated circuit: gate driver; low-side Number of channels: 2 Mounting: SMD Supply voltage: 4.5...20V DC |
auf Bestellung 2297 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTP3844DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BTP3845DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| BTP3845DSR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: MSOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| B3D120040HC |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065F |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065H |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065HC |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
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| B3D20065K |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| B3D20065TF |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| B3D20120F |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20120H |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20120HC |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D60120H2 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3DM060065N |
|
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B3M040120R |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGH40N120HF |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.46 EUR |
| 8+ | 12.14 EUR |
| 10+ | 10.72 EUR |
| 30+ | 9.63 EUR |
| BGH50N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.77 EUR |
| 6+ | 16.08 EUR |
| 30+ | 14.16 EUR |
| BGH50N65HS1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.57 EUR |
| 30+ | 12.86 EUR |
| BGH50N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.29 EUR |
| 7+ | 12.86 EUR |
| BGH75N120HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 568W
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247-3
Turn-off time: 443ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 568W
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247-3
Turn-off time: 443ns
Gate-emitter voltage: ±20V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| BGH75N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGH75N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.3 EUR |
| BTD21520EAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520EBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520MBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SAPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520SAWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
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| BTD21520SBPR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTD21520SBWR |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Produkt ist nicht verfügbar
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| BTL27524R |
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Mounting: SMD
Supply voltage: 4.5...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Mounting: SMD
Supply voltage: 4.5...20V DC
auf Bestellung 2297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 70+ | 1.23 EUR |
| 79+ | 1.08 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.9 EUR |
| 1000+ | 0.88 EUR |
| BTP3844DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BTP3845DR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BTP3845DSR |
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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