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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| AB2M040120R | BASiC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 123A Power dissipation: 238W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 68W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 15A Max. forward impulse current: 112A Power dissipation: 84W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. load current: 16A Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D20065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 40A Max. forward impulse current: 310A Power dissipation: 185W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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B1M080120HC | BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 149nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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B1M080120HK | BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-4 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W |
auf Bestellung 3267 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065D | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B2D04065D1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.6V Leakage current: 20µA Max. forward impulse current: 33A Kind of package: reel; tape Power dissipation: 19W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 31A Power dissipation: 39W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 34A Power dissipation: 39W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 55A Leakage current: 30µA Power dissipation: 64W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 20µA Max. forward impulse current: 38A Kind of package: reel; tape Technology: SiC Power dissipation: 50W |
auf Bestellung 2434 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D06065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 11µA Max. forward voltage: 1.7V Load current: 6A Max. forward impulse current: 48A Power dissipation: 58W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1V Max. forward impulse current: 56A Leakage current: 11µA Kind of package: tube Power dissipation: 64W |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.55V Max. forward impulse current: 65A Leakage current: 20µA Kind of package: reel; tape Power dissipation: 52W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.7V Load current: 10A Max. forward impulse current: 85A Power dissipation: 62W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.7V Load current: 10A Max. forward impulse current: 85A Power dissipation: 47W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.95V Leakage current: 16µA Max. forward impulse current: 95A Kind of package: reel; tape Power dissipation: 72W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 2V Load current: 10A Max. forward impulse current: 90A Power dissipation: 62W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.8V Load current: 5A x2 Max. load current: 10A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.9V Load current: 15A Max. forward impulse current: 135A Power dissipation: 123W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. load current: 16A Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Power dissipation: 74W Technology: SiC |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Case: TO263-2 Mounting: SMD Kind of package: reel; tape Leakage current: 13µA Max. forward voltage: 1.67V Load current: 20A Max. forward impulse current: 140A Power dissipation: 100W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Power dissipation: 130W Kind of package: tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. load current: 20A Max. forward impulse current: 70A Leakage current: 30µA Power dissipation: 74W Kind of package: tube |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Case: TO3PF Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 70A Power dissipation: 33W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20120F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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B2D20120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 1.78V Load current: 20A Max. forward impulse current: 190A Power dissipation: 159W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 2V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Power dissipation: 60W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D30065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 15µA Max. forward voltage: 1.82V Load current: 30A Max. forward impulse current: 200A Power dissipation: 216W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D30065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D30120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 1.75V Load current: 15A x2 Max. load current: 30A Max. forward impulse current: 135A Power dissipation: 95W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D40065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 26µA Max. forward voltage: 1.76V Load current: 40A Max. forward impulse current: 180A Power dissipation: 240W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D40120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.92V Load current: 20A x2 Max. load current: 40A Max. forward impulse current: 180A Power dissipation: 112W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D60120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Kind of package: tube Technology: SiC Leakage current: 70µA Power dissipation: 361W |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2DM100120N1 | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw Case: SOT227 Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 540A Load current: 100A x2 Max. load current: 200A Max. off-state voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 108 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B2M040120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 123A Power dissipation: 238W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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B2M065120H | BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 85A Power dissipation: 250W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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B2M065120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Case: TO263-7 Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 60nC On-state resistance: 65mΩ Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Drain-source voltage: 1.2kV Kind of package: tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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B2M065120Z | BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Kind of channel: enhancement Mounting: THT Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Case: TO247-4 Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 60nC On-state resistance: 65mΩ Drain current: 33A Pulsed drain current: 85A Power dissipation: 250W Drain-source voltage: 1.2kV Kind of package: tube |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| B3D20065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape Power dissipation: 187W Case: TO263-3 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube Power dissipation: 268W Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 150A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube Power dissipation: 227W Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube Power dissipation: 65W Case: TO3PF Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 75A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20120F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W Power dissipation: 273W Case: TO263-2 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 160A Max. off-state voltage: 1.2kV Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W Power dissipation: 259W Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 160A Max. off-state voltage: 1.2kV Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D20120HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W Power dissipation: 167W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3D60120H2 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W Power dissipation: 938W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 540A Load current: 60A Max. off-state voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3DM060065N | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw Load current: 60A x2 Max. off-state voltage: 650V Max. load current: 360A Max. forward impulse current: 420A Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Case: SOT227 Technology: SiC Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| B3DM060120N | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227 Max. forward impulse current: 520A Electrical mounting: screw Max. load current: 360A Mechanical mounting: screw Technology: SiC Features of semiconductor devices: Schottky Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AB2M040120R |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B1D06065KS |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| B1D08065K |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| B1D08065KS |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| B1D10065H |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 68W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 68W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| B1D10065KS |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| B1D15065K |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Max. forward impulse current: 112A
Power dissipation: 84W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Max. forward impulse current: 112A
Power dissipation: 84W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| B1D16065HC |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 16A
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 16A
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| B1D20065HC |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.52 EUR |
| 15+ | 4.98 EUR |
| B1D40065H |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 9+ | 8.49 EUR |
| B1M080120HC |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 5+ | 22.65 EUR |
| 30+ | 20.01 EUR |
| B1M080120HK |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-4
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-4
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 5+ | 22.65 EUR |
| B2D02120E1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
auf Bestellung 3267 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 65+ | 1.1 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.84 EUR |
| B2D04065D |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D04065D1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Leakage current: 20µA
Max. forward impulse current: 33A
Kind of package: reel; tape
Power dissipation: 19W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Leakage current: 20µA
Max. forward impulse current: 33A
Kind of package: reel; tape
Power dissipation: 19W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D04065E1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 31A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 31A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 76+ | 0.94 EUR |
| 87+ | 0.83 EUR |
| 100+ | 0.74 EUR |
| B2D04065K1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| B2D05120K1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Power dissipation: 64W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Power dissipation: 64W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D06065E1 |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Max. forward impulse current: 38A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Max. forward impulse current: 38A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 50W
auf Bestellung 2434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| B2D06065K1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 11µA
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 48A
Power dissipation: 58W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 11µA
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 48A
Power dissipation: 58W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 48+ | 1.52 EUR |
| 54+ | 1.33 EUR |
| 60+ | 1.2 EUR |
| B2D08065K |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| B2D08065K1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 44+ | 1.63 EUR |
| 50+ | 1.44 EUR |
| B2D08065KS |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| B2D10065E1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.55V
Max. forward impulse current: 65A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 52W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.55V
Max. forward impulse current: 65A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 52W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D10065K1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 85A
Power dissipation: 62W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 85A
Power dissipation: 62W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 35+ | 2.04 EUR |
| 40+ | 1.82 EUR |
| B2D10065KS |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 85A
Power dissipation: 47W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 85A
Power dissipation: 47W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 31+ | 2.35 EUR |
| 35+ | 2.06 EUR |
| B2D10120E1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D10120H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 90A
Power dissipation: 62W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 90A
Power dissipation: 62W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| B2D10120HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.8V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.8V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| B2D15120H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.9V
Load current: 15A
Max. forward impulse current: 135A
Power dissipation: 123W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.9V
Load current: 15A
Max. forward impulse current: 135A
Power dissipation: 123W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.08 EUR |
| 14+ | 5.48 EUR |
| 15+ | 4.83 EUR |
| B2D16120HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 74W
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 74W
Technology: SiC
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.33 EUR |
| 30+ | 3.85 EUR |
| B2D20065F1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 13µA
Max. forward voltage: 1.67V
Load current: 20A
Max. forward impulse current: 140A
Power dissipation: 100W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 13µA
Max. forward voltage: 1.67V
Load current: 20A
Max. forward impulse current: 140A
Power dissipation: 100W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4 EUR |
| 20+ | 3.62 EUR |
| B2D20065H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Power dissipation: 130W
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |
| B2D20065HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 20A
Max. forward impulse current: 70A
Leakage current: 30µA
Power dissipation: 74W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 20A
Max. forward impulse current: 70A
Leakage current: 30µA
Power dissipation: 74W
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 5.03 EUR |
| 16+ | 4.52 EUR |
| B2D20065TF |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Case: TO3PF
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 70A
Power dissipation: 33W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Case: TO3PF
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 70A
Power dissipation: 33W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.6 EUR |
| B2D20120F1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2D20120H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.78V
Load current: 20A
Max. forward impulse current: 190A
Power dissipation: 159W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.78V
Load current: 20A
Max. forward impulse current: 190A
Power dissipation: 159W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.26 EUR |
| 13+ | 5.63 EUR |
| B2D20120HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 2V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 2V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.26 EUR |
| 13+ | 5.63 EUR |
| 30+ | 4.98 EUR |
| B2D30065H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 15µA
Max. forward voltage: 1.82V
Load current: 30A
Max. forward impulse current: 200A
Power dissipation: 216W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 15µA
Max. forward voltage: 1.82V
Load current: 30A
Max. forward impulse current: 200A
Power dissipation: 216W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.14 EUR |
| 10+ | 7.34 EUR |
| 12+ | 6.48 EUR |
| B2D30065HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.56 EUR |
| 11+ | 6.79 EUR |
| 30+ | 6.01 EUR |
| B2D30120HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.75V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 135A
Power dissipation: 95W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.75V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 135A
Power dissipation: 95W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.4 EUR |
| 9+ | 8.47 EUR |
| 30+ | 7.48 EUR |
| B2D40065H1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 26µA
Max. forward voltage: 1.76V
Load current: 40A
Max. forward impulse current: 180A
Power dissipation: 240W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 26µA
Max. forward voltage: 1.76V
Load current: 40A
Max. forward impulse current: 180A
Power dissipation: 240W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 11.23 EUR |
| 8+ | 10.08 EUR |
| 10+ | 9.07 EUR |
| B2D40120HC1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.51 EUR |
| 7+ | 11.3 EUR |
| 30+ | 10 EUR |
| B2D60120H1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.33 EUR |
| 10+ | 16.22 EUR |
| B2DM100120N1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Case: SOT227
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 540A
Load current: 100A x2
Max. load current: 200A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Case: SOT227
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 540A
Load current: 100A x2
Max. load current: 200A
Max. off-state voltage: 1.2kV
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 108 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B2M040120R |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| B2M065120H |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.36 EUR |
| 7+ | 11.17 EUR |
| 10+ | 9.88 EUR |
| 30+ | 9.48 EUR |
| B2M065120R |
|
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Drain-source voltage: 1.2kV
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.39 EUR |
| 6+ | 13.08 EUR |
| 10+ | 11.57 EUR |
| 30+ | 10.35 EUR |
| B2M065120Z |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.64 EUR |
| 10+ | 11.14 EUR |
| B3D20065F |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065H |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065HC |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065K |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20065TF |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20120F |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Power dissipation: 273W
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Power dissipation: 273W
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3D20120H |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Power dissipation: 259W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Power dissipation: 259W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
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| B3D20120HC |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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| B3D60120H2 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
Produkt ist nicht verfügbar
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| B3DM060065N |
|
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
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| B3DM060120N |
|
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
Im Einkaufswagen
Stück im Wert von UAH
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