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B1D06065KS B1D06065KS BASiC SEMICONDUCTOR B1D06065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Mounting: THT
Case: TO220ISO
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Power dissipation: 30W
Max. forward impulse current: 45A
Max. off-state voltage: 650V
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
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B1D08065F B1D08065F BASiC SEMICONDUCTOR B1D08065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Produkt ist nicht verfügbar
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B1D08065K B1D08065K BASiC SEMICONDUCTOR B1D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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B1D08065KS B1D08065KS BASiC SEMICONDUCTOR B1D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
auf Bestellung 19 Stücke:
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19+3.76 EUR
Mindestbestellmenge: 19
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B1D15065K B1D15065K BASiC SEMICONDUCTOR B1D15065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. off-state voltage: 650V
Case: TO220-2
auf Bestellung 7 Stücke:
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7+10.21 EUR
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B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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B1M080120HK B1M080120HK BASiC SEMICONDUCTOR B1M080120HK.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 13 Stücke:
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3+25.17 EUR
5+22.65 EUR
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B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
77+0.93 EUR
88+0.82 EUR
100+0.73 EUR
Mindestbestellmenge: 70
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B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
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27+2.65 EUR
Mindestbestellmenge: 27
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B2D06065E1 B2D06065E1 BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Mounting: SMD
Case: TO252-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Max. forward voltage: 1.7V
Load current: 6A
Power dissipation: 50W
Max. forward impulse current: 38A
Max. off-state voltage: 650V
Kind of package: reel; tape
auf Bestellung 2434 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 51
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B2D08065K B2D08065K BASiC SEMICONDUCTOR B2D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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B2D08065K1 B2D08065K1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 79 Stücke:
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40+1.82 EUR
44+1.63 EUR
50+1.44 EUR
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B2D08065KS B2D08065KS BASiC SEMICONDUCTOR B2D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
auf Bestellung 41 Stücke:
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37+1.94 EUR
41+1.74 EUR
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B2D10065E1 BASiC SEMICONDUCTOR B2D10065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.55V
Max. forward impulse current: 65A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 52W
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B2D10065KS B2D10065KS BASiC SEMICONDUCTOR B2D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 10µA
Power dissipation: 47W
Kind of package: tube
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.6 EUR
31+2.35 EUR
35+2.06 EUR
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B2D10120E1 BASiC SEMICONDUCTOR B2D10120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
Produkt ist nicht verfügbar
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B2D10120H1 B2D10120H1 BASiC SEMICONDUCTOR B2D10120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Power dissipation: 62W
Kind of package: tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
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B2D16065HC1 B2D16065HC1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
19+3.92 EUR
21+3.46 EUR
30+3.33 EUR
Mindestbestellmenge: 17
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B2D20120F1 B2D20120F1 BASiC SEMICONDUCTOR B2D20120F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
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B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR B2D20120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.63 EUR
Mindestbestellmenge: 12
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B2D20120HC1 B2D20120HC1 BASiC SEMICONDUCTOR B2D20120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 60W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
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B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.1 EUR
10+16.02 EUR
Mindestbestellmenge: 4
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B2DM100120N1 BASiC SEMICONDUCTOR B2DM100120N1.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 540A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
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B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.2 EUR
7+11.01 EUR
10+9.75 EUR
30+9.48 EUR
Mindestbestellmenge: 6
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B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.94 EUR
10+11.44 EUR
30+10.24 EUR
Mindestbestellmenge: 6
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B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.67 EUR
10+11.15 EUR
Mindestbestellmenge: 6
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B3D08065E BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-3; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-3
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 91W
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B3D08065K BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 94W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 56A
Kind of package: tube
Power dissipation: 94W
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B3D08065KS BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; 75W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 60A
Kind of package: tube
Power dissipation: 75W
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B3D20120F BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
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B3D20120H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
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B3D20120HC BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
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B3DM060065N BASiC SEMICONDUCTOR B3DM060065N.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
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B3DM060120N BASiC SEMICONDUCTOR B3DM060120N.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
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B3DM100120N BASiC SEMICONDUCTOR B3DM100120N.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3M025065L BASiC SEMICONDUCTOR B3M025065L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.07 EUR
8+9.98 EUR
10+8.82 EUR
30+7.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Case: TO247-4
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Turn-on time: 54ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Turn-on time: 84ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524R BTL27524R BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
72+1.01 EUR
81+0.88 EUR
100+0.79 EUR
250+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3843DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B1D06065KS B1D06065KS.pdf
B1D06065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Mounting: THT
Case: TO220ISO
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Power dissipation: 30W
Max. forward impulse current: 45A
Max. off-state voltage: 650V
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B1D08065F B1D08065F.pdf
B1D08065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B1D08065K B1D08065K.pdf
B1D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
B1D08065KS B1D08065KS.pdf
B1D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
B1D15065K B1D15065K.pdf
B1D15065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. off-state voltage: 650V
Case: TO220-2
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
B1D16065HC B1D16065HC.pdf
B1D16065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
B1M080120HK B1M080120HK.pdf
B1M080120HK
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.17 EUR
5+22.65 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065E1 B2D04065E1.pdf
B2D04065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
77+0.93 EUR
88+0.82 EUR
100+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065K1 B2D04065K1.pdf
B2D04065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
B2D06065E1
B2D06065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Mounting: SMD
Case: TO252-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Max. forward voltage: 1.7V
Load current: 6A
Power dissipation: 50W
Max. forward impulse current: 38A
Max. off-state voltage: 650V
Kind of package: reel; tape
auf Bestellung 2434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
B2D08065K B2D08065K.pdf
B2D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
B2D08065K1
B2D08065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.63 EUR
50+1.44 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
B2D08065KS B2D08065KS.pdf
B2D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
41+1.74 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
B2D10065E1 B2D10065E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.55V
Max. forward impulse current: 65A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 52W
Produkt ist nicht verfügbar
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B2D10065KS B2D10065KS.pdf
B2D10065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 10µA
Power dissipation: 47W
Kind of package: tube
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
31+2.35 EUR
35+2.06 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
B2D10120E1 B2D10120E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
Produkt ist nicht verfügbar
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B2D10120H1 B2D10120H1.pdf
B2D10120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Power dissipation: 62W
Kind of package: tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
B2D16065HC1
B2D16065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
19+3.92 EUR
21+3.46 EUR
30+3.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120F1 B2D20120F1.pdf
B2D20120F1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120H1 B2D20120H1.pdf
B2D20120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120HC1 B2D20120HC1.pdf
B2D20120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 60W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
30+4.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.1 EUR
10+16.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
B2DM100120N1 B2DM100120N1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 540A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120H B2M065120H.pdf
B2M065120H
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.2 EUR
7+11.01 EUR
10+9.75 EUR
30+9.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120R B2M065120R.pdf
B2M065120R
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Drain-source voltage: 1.2kV
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.94 EUR
10+11.44 EUR
30+10.24 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z.pdf
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.67 EUR
10+11.15 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B3D08065E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-3; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-3
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 91W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 94W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 56A
Kind of package: tube
Power dissipation: 94W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; 75W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 60A
Kind of package: tube
Power dissipation: 75W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3D20120F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3D20120H
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3D20120HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3DM060065N B3DM060065N.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3DM060120N B3DM060120N.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3DM100120N B3DM100120N.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B3M025065L B3M025065L.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF
BGH40N120HF
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.07 EUR
8+9.98 EUR
10+8.82 EUR
30+7.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Case: TO247-4
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Turn-on time: 54ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Turn-on time: 84ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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BTD21520MBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520SAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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BTD21520SBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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BTL27524R
BTL27524R
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
72+1.01 EUR
81+0.88 EUR
100+0.79 EUR
250+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 61
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BTP2845DR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTP2845DSR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTP3843DR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Produkt ist nicht verfügbar
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BTP3845DR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DSR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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