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AB2M040120R BASiC SEMICONDUCTOR AB2M040120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
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B1D05120E B1D05120E BASiC SEMICONDUCTOR B1D05120E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 53W
Leakage current: 10µA
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B1D06065F B1D06065F BASiC SEMICONDUCTOR B1D06065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.73V
Leakage current: 20µA
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 38W
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B1D06065KS B1D06065KS BASiC SEMICONDUCTOR B1D06065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B1D08065F B1D08065F BASiC SEMICONDUCTOR B1D08065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 10µA
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 48W
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B1D08065K B1D08065K BASiC SEMICONDUCTOR B1D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
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B1D08065KS B1D08065KS BASiC SEMICONDUCTOR B1D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
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B1D10065H B1D10065H BASiC SEMICONDUCTOR B1D10065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 68W
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B1D10065KS B1D10065KS BASiC SEMICONDUCTOR B1D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B1D10120E B1D10120E BASiC SEMICONDUCTOR B1D10120E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 62W
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B1D15065K B1D15065K BASiC SEMICONDUCTOR B1D15065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
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B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 16A
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
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B1D20065HC B1D20065HC BASiC SEMICONDUCTOR B1D20065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
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B1D40065H B1D40065H BASiC SEMICONDUCTOR B1D40065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 185W
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B1M080120HC B1M080120HC BASiC SEMICONDUCTOR B1M080120HC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of channel: enhancement
Pulsed drain current: 80A
Kind of package: tube
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B1M080120HK B1M080120HK BASiC SEMICONDUCTOR B1M080120HK.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Power dissipation: 241W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of channel: enhancement
Pulsed drain current: 80A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
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B2D02120E1 B2D02120E1 BASiC SEMICONDUCTOR B2D02120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 34W
Technology: SiC
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B2D02120K1 B2D02120K1 BASiC SEMICONDUCTOR B2D02120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 20A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 35W
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B2D04065D BASiC SEMICONDUCTOR B2D04065D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
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B2D04065D1 BASiC SEMICONDUCTOR B2D04065D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Leakage current: 20µA
Max. forward impulse current: 33A
Kind of package: reel; tape
Power dissipation: 19W
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B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Max. forward impulse current: 31A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO252-2
Type of diode: Schottky rectifying
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B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Mounting: THT
Max. forward impulse current: 34A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO220-2
Type of diode: Schottky rectifying
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B2D05120E1 BASiC SEMICONDUCTOR B2D05120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 47A
Kind of package: reel; tape
Power dissipation: 53W
Leakage current: 15µA
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B2D05120K1 B2D05120K1 BASiC SEMICONDUCTOR B2D05120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
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B2D06065E1 B2D06065E1 BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Max. forward impulse current: 38A
Kind of package: reel; tape
Power dissipation: 50W
Technology: SiC
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B2D06065K1 B2D06065K1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 11µA
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 48A
Power dissipation: 58W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D06065KF1 B2D06065KF1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 11uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 59A
Leakage current: 11µA
Power dissipation: 23W
Kind of package: tube
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B2D06065KS BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
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B2D08065K B2D08065K BASiC SEMICONDUCTOR B2D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
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B2D08065K1 B2D08065K1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
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B2D08065KS B2D08065KS BASiC SEMICONDUCTOR B2D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
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B2D10065F B2D10065F BASiC SEMICONDUCTOR B2D10065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.67V
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 54W
Max. forward impulse current: 75A
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B2D10065F1 BASiC SEMICONDUCTOR B2D10065F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 63W
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B2D10065K1 B2D10065K1 BASiC SEMICONDUCTOR B2D10065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Mounting: THT
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Power dissipation: 62W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO220-2
Type of diode: Schottky rectifying
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B2D10065KS B2D10065KS BASiC SEMICONDUCTOR B2D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Power dissipation: 47W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 10µA
Case: TO220ISO
Type of diode: Schottky rectifying
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B2D10120E1 BASiC SEMICONDUCTOR B2D10120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
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B2D10120H1 B2D10120H1 BASiC SEMICONDUCTOR B2D10120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 90A
Power dissipation: 62W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D10120HC1 B2D10120HC1 BASiC SEMICONDUCTOR B2D10120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Mounting: THT
Max. forward impulse current: 55A
Max. forward voltage: 1.8V
Power dissipation: 64W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 20µA
Case: TO247-3
Type of diode: Schottky rectifying
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B2D15120H1 B2D15120H1 BASiC SEMICONDUCTOR B2D15120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA
Mounting: THT
Max. forward impulse current: 135A
Max. forward voltage: 1.9V
Power dissipation: 123W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: TO247-2
Type of diode: Schottky rectifying
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B2D16120HC1 B2D16120HC1 BASiC SEMICONDUCTOR B2D16120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 74W
Technology: SiC
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B2D20065F1 B2D20065F1 BASiC SEMICONDUCTOR B2D20065F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 13µA
Max. forward voltage: 1.67V
Load current: 20A
Max. forward impulse current: 140A
Power dissipation: 100W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D20065H1 B2D20065H1 BASiC SEMICONDUCTOR B2D20065H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
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B2D20065HC1 B2D20065HC1 BASiC SEMICONDUCTOR B2D20065HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 20A
Max. forward impulse current: 70A
Leakage current: 30µA
Power dissipation: 74W
Kind of package: tube
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B2D20065TF B2D20065TF BASiC SEMICONDUCTOR B2D20065TF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3PF
Max. forward voltage: 1.62V
Max. load current: 20A
Max. forward impulse current: 70A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 33W
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B2D20120F1 B2D20120F1 BASiC SEMICONDUCTOR B2D20120F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Power dissipation: 122W
Leakage current: 33µA
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B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR B2D20120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Leakage current: 40µA
Kind of package: tube
Power dissipation: 159W
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B2D20120HC1 B2D20120HC1 BASiC SEMICONDUCTOR B2D20120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 60W
Leakage current: 40µA
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B2D30065H1 B2D30065H1 BASiC SEMICONDUCTOR B2D30065H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.82V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 15µA
Power dissipation: 216W
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B2D30065HC1 B2D30065HC1 BASiC SEMICONDUCTOR B2D30065HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Kind of package: tube
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B2D30120H1 B2D30120H1 BASiC SEMICONDUCTOR B2D30120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 225A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 185W
Technology: SiC
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 38µA
Type of diode: Schottky rectifying
Mounting: THT
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B2D30120HC1 B2D30120HC1 BASiC SEMICONDUCTOR B2D30120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.75V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 135A
Power dissipation: 95W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
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B2D40065H1 B2D40065H1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 26µA
Max. forward voltage: 1.76V
Load current: 40A
Max. forward impulse current: 180A
Power dissipation: 240W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D40120HC1 B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
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B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Leakage current: 70µA
Kind of package: tube
Power dissipation: 361W
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B2DM100120N1 BASiC SEMICONDUCTOR B2DM100120N1.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Case: SOT227
Kind of package: tube
Max. forward impulse current: 540A
Type of semiconductor module: diode
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A x2
Max. load current: 200A
Semiconductor structure: double independent
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B2M032120Y B2M032120Y BASiC SEMICONDUCTOR B2M032120Y.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Pulsed drain current: 190A
Power dissipation: 375W
Gate charge: 40nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO247PLUS-4
On-state resistance: 50mΩ
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B2M040120R BASiC SEMICONDUCTOR B2M040120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Pulsed drain current: 85A
Kind of package: tube
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B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Mounting: SMD
Pulsed drain current: 85A
Power dissipation: 150W
Gate charge: 60nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO263-7
On-state resistance: 65mΩ
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B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Pulsed drain current: 85A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
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AB2M040120R AB2M040120R.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Produkt ist nicht verfügbar
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B1D05120E B1D05120E.pdf
B1D05120E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 53W
Leakage current: 10µA
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B1D06065F B1D06065F.pdf
B1D06065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.73V
Leakage current: 20µA
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 38W
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B1D06065KS B1D06065KS.pdf
B1D06065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B1D08065F B1D08065F.pdf
B1D08065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 10µA
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 48W
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B1D08065K B1D08065K.pdf
B1D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
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B1D08065KS B1D08065KS.pdf
B1D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
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B1D10065H B1D10065H.pdf
B1D10065H
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 68W
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B1D10065KS B1D10065KS.pdf
B1D10065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B1D10120E B1D10120E.pdf
B1D10120E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 62W
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B1D15065K B1D15065K.pdf
B1D15065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
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B1D16065HC B1D16065HC.pdf
B1D16065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 16A
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
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B1D20065HC B1D20065HC.pdf
B1D20065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 24 Stücke:
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B1D40065H B1D40065H.pdf
B1D40065H
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 185W
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B1M080120HC B1M080120HC.pdf
B1M080120HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of channel: enhancement
Pulsed drain current: 80A
Kind of package: tube
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B1M080120HK B1M080120HK.pdf
B1M080120HK
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Power dissipation: 241W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of channel: enhancement
Pulsed drain current: 80A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
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B2D02120E1 B2D02120E1.pdf
B2D02120E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 34W
Technology: SiC
auf Bestellung 3261 Stücke:
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B2D02120K1 B2D02120K1.pdf
B2D02120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 20A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 35W
Produkt ist nicht verfügbar
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B2D04065D B2D04065D.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Produkt ist nicht verfügbar
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B2D04065D1 B2D04065D1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Leakage current: 20µA
Max. forward impulse current: 33A
Kind of package: reel; tape
Power dissipation: 19W
Produkt ist nicht verfügbar
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B2D04065E1 B2D04065E1.pdf
B2D04065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Max. forward impulse current: 31A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO252-2
Type of diode: Schottky rectifying
auf Bestellung 2419 Stücke:
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B2D04065K1 B2D04065K1.pdf
B2D04065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Mounting: THT
Max. forward impulse current: 34A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO220-2
Type of diode: Schottky rectifying
auf Bestellung 25 Stücke:
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B2D05120E1 B2D05120E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 47A
Kind of package: reel; tape
Power dissipation: 53W
Leakage current: 15µA
Produkt ist nicht verfügbar
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B2D05120K1 B2D05120K1.pdf
B2D05120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 275 Stücke:
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B2D06065E1
B2D06065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Max. forward impulse current: 38A
Kind of package: reel; tape
Power dissipation: 50W
Technology: SiC
auf Bestellung 2428 Stücke:
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B2D06065K1
B2D06065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 11µA
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 48A
Power dissipation: 58W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D06065KF1
B2D06065KF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 11uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 59A
Leakage current: 11µA
Power dissipation: 23W
Kind of package: tube
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B2D06065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
Produkt ist nicht verfügbar
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B2D08065K B2D08065K.pdf
B2D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
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B2D08065K1
B2D08065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 79 Stücke:
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B2D08065KS B2D08065KS.pdf
B2D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
auf Bestellung 41 Stücke:
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B2D10065F B2D10065F.pdf
B2D10065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.67V
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 54W
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
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B2D10065F1 B2D10065F1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 63W
Produkt ist nicht verfügbar
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B2D10065K1 B2D10065K1.pdf
B2D10065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Mounting: THT
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Power dissipation: 62W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO220-2
Type of diode: Schottky rectifying
auf Bestellung 95 Stücke:
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B2D10065KS B2D10065KS.pdf
B2D10065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Power dissipation: 47W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 10µA
Case: TO220ISO
Type of diode: Schottky rectifying
auf Bestellung 60 Stücke:
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B2D10120E1 B2D10120E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
Produkt ist nicht verfügbar
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B2D10120H1 B2D10120H1.pdf
B2D10120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 90A
Power dissipation: 62W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 20 Stücke:
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B2D10120HC1 B2D10120HC1.pdf
B2D10120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Mounting: THT
Max. forward impulse current: 55A
Max. forward voltage: 1.8V
Power dissipation: 64W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 20µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 4 Stücke:
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B2D15120H1 B2D15120H1.pdf
B2D15120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA
Mounting: THT
Max. forward impulse current: 135A
Max. forward voltage: 1.9V
Power dissipation: 123W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 19 Stücke:
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B2D16120HC1 B2D16120HC1.pdf
B2D16120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 74W
Technology: SiC
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B2D20065F1 B2D20065F1.pdf
B2D20065F1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 13µA
Max. forward voltage: 1.67V
Load current: 20A
Max. forward impulse current: 140A
Power dissipation: 100W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 387 Stücke:
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B2D20065H1 B2D20065H1.pdf
B2D20065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
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B2D20065HC1 B2D20065HC1.pdf
B2D20065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 20A
Max. forward impulse current: 70A
Leakage current: 30µA
Power dissipation: 74W
Kind of package: tube
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B2D20065TF B2D20065TF.pdf
B2D20065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3PF
Max. forward voltage: 1.62V
Max. load current: 20A
Max. forward impulse current: 70A
Kind of package: tube
Leakage current: 20µA
Power dissipation: 33W
auf Bestellung 26 Stücke:
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B2D20120F1 B2D20120F1.pdf
B2D20120F1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Power dissipation: 122W
Leakage current: 33µA
Produkt ist nicht verfügbar
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B2D20120H1 B2D20120H1.pdf
B2D20120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Leakage current: 40µA
Kind of package: tube
Power dissipation: 159W
auf Bestellung 29 Stücke:
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B2D20120HC1 B2D20120HC1.pdf
B2D20120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 60W
Leakage current: 40µA
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B2D30065H1 B2D30065H1.pdf
B2D30065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.82V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 15µA
Power dissipation: 216W
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B2D30065HC1 B2D30065HC1.pdf
B2D30065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Kind of package: tube
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B2D30120H1 B2D30120H1.pdf
B2D30120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 225A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 185W
Technology: SiC
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 38µA
Type of diode: Schottky rectifying
Mounting: THT
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B2D30120HC1 B2D30120HC1.pdf
B2D30120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 1.75V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 135A
Power dissipation: 95W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
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B2D40065H1
B2D40065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 26µA
Max. forward voltage: 1.76V
Load current: 40A
Max. forward impulse current: 180A
Power dissipation: 240W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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B2D40120HC1 B2D40120HC1.pdf
B2D40120HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
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B2D60120H1 B2D60120H1.pdf
B2D60120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Leakage current: 70µA
Kind of package: tube
Power dissipation: 361W
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B2DM100120N1 B2DM100120N1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Case: SOT227
Kind of package: tube
Max. forward impulse current: 540A
Type of semiconductor module: diode
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A x2
Max. load current: 200A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Mindestbestellmenge: 108 Stücke
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B2M032120Y B2M032120Y.pdf
B2M032120Y
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Pulsed drain current: 190A
Power dissipation: 375W
Gate charge: 40nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO247PLUS-4
On-state resistance: 50mΩ
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B2M040120R B2M040120R.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 238W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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B2M065120H B2M065120H.pdf
B2M065120H
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Pulsed drain current: 85A
Kind of package: tube
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B2M065120R B2M065120R.pdf
B2M065120R
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Mounting: SMD
Pulsed drain current: 85A
Power dissipation: 150W
Gate charge: 60nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO263-7
On-state resistance: 65mΩ
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B2M065120Z B2M065120Z.pdf
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Pulsed drain current: 85A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
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