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| Foto | Bezeichnung | Hersteller | Beschreibung |
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B1D05120E | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Leakage current: 10µA Max. forward impulse current: 60A Kind of package: reel; tape Power dissipation: 53W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| B1D06065KS | BASiC SEMICONDUCTOR | B1D06065KS THT Schottky diodes |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D08065K | BASiC SEMICONDUCTOR | B1D08065K THT Schottky diodes |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D08065KS | BASiC SEMICONDUCTOR | B1D08065KS THT Schottky diodes |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10065E | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 50W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D10065KS | BASiC SEMICONDUCTOR | B1D10065KS THT Schottky diodes |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10120E | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 62W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Max. forward voltage: 1.75V Power dissipation: 73W Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Max. off-state voltage: 650V Case: TO247-3 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Max. forward voltage: 1.75V Power dissipation: 73W Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Max. off-state voltage: 650V Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D20065HC | BASiC SEMICONDUCTOR | B1D20065HC THT Schottky diodes |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Power dissipation: 185W Kind of package: tube |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Power dissipation: 185W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M080120HC | BASiC SEMICONDUCTOR | B1M080120HC THT N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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B1M080120HK | BASiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Technology: SiC Case: TO247-4 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Drain-source voltage: 1.2kV |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B1M080120HK | BASiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Technology: SiC Case: TO247-4 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W |
auf Bestellung 3279 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3279 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2451 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
auf Bestellung 2436 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2436 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065K | BASiC SEMICONDUCTOR | B2D08065K THT Schottky diodes |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | B2D08065K1 THT Schottky diodes |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065KS | BASiC SEMICONDUCTOR | B2D08065KS THT Schottky diodes |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | B2D10065K1 THT Schottky diodes |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10065KS | BASiC SEMICONDUCTOR | B2D10065KS THT Schottky diodes |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10120H1 | BASiC SEMICONDUCTOR | B2D10120H1 THT Schottky diodes |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | B2D10120HC1 THT Schottky diodes |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | B2D15120H1 THT Schottky diodes |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D16065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 650V Case: TO247-3 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D16065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 650V Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D16120HC1 | BASiC SEMICONDUCTOR | B2D16120HC1 THT Schottky diodes |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | B2D20065F1 SMD Schottky diodes |
auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | B2D20065H1 THT Schottky diodes |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | B2D20065HC1 THT Schottky diodes |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065TF | BASiC SEMICONDUCTOR | B2D20065TF THT Schottky diodes |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20120H1 | BASiC SEMICONDUCTOR | B2D20120H1 THT Schottky diodes |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | B2D20120HC1 THT Schottky diodes |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30065H1 | BASiC SEMICONDUCTOR | B2D30065H1 THT Schottky diodes |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30065HC1 | BASiC SEMICONDUCTOR | B2D30065HC1 THT Schottky diodes |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30120H1 | BASiC SEMICONDUCTOR | B2D30120H1 THT Schottky diodes |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | B2D30120HC1 THT Schottky diodes |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D40065H1 | BASiC SEMICONDUCTOR | B2D40065H1 THT Schottky diodes |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D40120H1 | BASiC SEMICONDUCTOR | B2D40120H1 THT Schottky diodes |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | B2D40120HC1 THT Schottky diodes |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | B2D60120H1 THT Schottky diodes |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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B2M032120Y | BASiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Case: TO247PLUS-4 Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -4...18V Gate charge: 40nC On-state resistance: 50mΩ Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Drain-source voltage: 1.2kV Polarisation: unipolar |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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B2M032120Y | BASiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Case: TO247PLUS-4 Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -4...18V Gate charge: 40nC On-state resistance: 50mΩ Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Drain-source voltage: 1.2kV Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M065120H | BASiC SEMICONDUCTOR | B2M065120H THT N channel transistors |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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B2M065120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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B2M065120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M065120Z | BASiC SEMICONDUCTOR | B2M065120Z THT N channel transistors |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D05120E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Leakage current: 10µA
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 53W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Leakage current: 10µA
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 53W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B1D06065KS |
Hersteller: BASiC SEMICONDUCTOR
B1D06065KS THT Schottky diodes
B1D06065KS THT Schottky diodes
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| 15+ | 4.76 EUR |
| 39+ | 1.83 EUR |
| 500+ | 1.26 EUR |
| B1D08065K |
Hersteller: BASiC SEMICONDUCTOR
B1D08065K THT Schottky diodes
B1D08065K THT Schottky diodes
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 11+ | 6.51 EUR |
| 29+ | 2.46 EUR |
| 500+ | 1.63 EUR |
| B1D08065KS |
Hersteller: BASiC SEMICONDUCTOR
B1D08065KS THT Schottky diodes
B1D08065KS THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| 29+ | 2.46 EUR |
| 500+ | 1.62 EUR |
| B1D10065E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B1D10065H |
Hersteller: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 9+ | 7.95 EUR |
| 23+ | 3.1 EUR |
| 600+ | 1.92 EUR |
| B1D10065KS |
Hersteller: BASiC SEMICONDUCTOR
B1D10065KS THT Schottky diodes
B1D10065KS THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 30+ | 2.39 EUR |
| 500+ | 2.04 EUR |
| B1D10120E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 62W
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Stück im Wert von UAH
| B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| B1D16065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| B1D16065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 30+ | 3.16 EUR |
| 150+ | 3.02 EUR |
| B1D20065HC |
Hersteller: BASiC SEMICONDUCTOR
B1D20065HC THT Schottky diodes
B1D20065HC THT Schottky diodes
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.91 EUR |
| 16+ | 4.66 EUR |
| 17+ | 4.4 EUR |
| B1D30065TF |
Hersteller: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.89 EUR |
| 12+ | 5.98 EUR |
| 13+ | 5.65 EUR |
| B1D40065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 9+ | 8.49 EUR |
| B1D40065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 9+ | 8.49 EUR |
| 30+ | 7.51 EUR |
| 150+ | 7.22 EUR |
| B1M080120HC |
Hersteller: BASiC SEMICONDUCTOR
B1M080120HC THT N channel transistors
B1M080120HC THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 4+ | 18.6 EUR |
| 600+ | 18.3 EUR |
| B1M080120HK |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Drain-source voltage: 1.2kV
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 5+ | 22.65 EUR |
| B1M080120HK |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 5+ | 22.65 EUR |
| 30+ | 20.01 EUR |
| 150+ | 18.95 EUR |
| B2D02120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
auf Bestellung 3279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 75+ | 0.96 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.83 EUR |
| B2D02120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3279 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 75+ | 0.96 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.83 EUR |
| B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 77+ | 0.93 EUR |
| 87+ | 0.83 EUR |
| 100+ | 0.73 EUR |
| B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2451 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 77+ | 0.93 EUR |
| 87+ | 0.83 EUR |
| 100+ | 0.73 EUR |
| B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| B2D06065E1 |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
auf Bestellung 2436 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| B2D06065E1 |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2436 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| B2D06065K1 |
Hersteller: BASiC SEMICONDUCTOR
B2D06065K1 THT Schottky diodes
B2D06065K1 THT Schottky diodes
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 56+ | 1.29 EUR |
| 59+ | 1.22 EUR |
| B2D08065K |
Hersteller: BASiC SEMICONDUCTOR
B2D08065K THT Schottky diodes
B2D08065K THT Schottky diodes
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 11+ | 6.51 EUR |
| 30+ | 2.39 EUR |
| 500+ | 1.59 EUR |
| B2D08065K1 |
Hersteller: BASiC SEMICONDUCTOR
B2D08065K1 THT Schottky diodes
B2D08065K1 THT Schottky diodes
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.13 EUR |
| 46+ | 1.57 EUR |
| 49+ | 1.49 EUR |
| B2D08065KS |
Hersteller: BASiC SEMICONDUCTOR
B2D08065KS THT Schottky diodes
B2D08065KS THT Schottky diodes
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.43 EUR |
| 41+ | 1.74 EUR |
| 500+ | 1.62 EUR |
| B2D10065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
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| B2D10065K1 |
Hersteller: BASiC SEMICONDUCTOR
B2D10065K1 THT Schottky diodes
B2D10065K1 THT Schottky diodes
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 41+ | 1.74 EUR |
| 44+ | 1.66 EUR |
| B2D10065KS |
Hersteller: BASiC SEMICONDUCTOR
B2D10065KS THT Schottky diodes
B2D10065KS THT Schottky diodes
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 36+ | 2.03 EUR |
| 38+ | 1.92 EUR |
| B2D10120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D10120H1 THT Schottky diodes
B2D10120H1 THT Schottky diodes
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.93 EUR |
| 26+ | 2.75 EUR |
| 600+ | 2.53 EUR |
| B2D10120HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D10120HC1 THT Schottky diodes
B2D10120HC1 THT Schottky diodes
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 7+ | 10.21 EUR |
| 19+ | 3.76 EUR |
| 600+ | 2.39 EUR |
| B2D15120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D15120H1 THT Schottky diodes
B2D15120H1 THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.12 EUR |
| 14+ | 5.22 EUR |
| 15+ | 4.93 EUR |
| B2D16065HC1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.3 EUR |
| 19+ | 3.86 EUR |
| 21+ | 3.42 EUR |
| 30+ | 3.36 EUR |
| B2D16065HC1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.3 EUR |
| 19+ | 3.86 EUR |
| 21+ | 3.42 EUR |
| 30+ | 3.36 EUR |
| B2D16120HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D16120HC1 THT Schottky diodes
B2D16120HC1 THT Schottky diodes
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.68 EUR |
| 20+ | 3.72 EUR |
| 21+ | 3.52 EUR |
| B2D20065F1 |
Hersteller: BASiC SEMICONDUCTOR
B2D20065F1 SMD Schottky diodes
B2D20065F1 SMD Schottky diodes
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 18+ | 4 EUR |
| 19+ | 3.79 EUR |
| 100+ | 3.65 EUR |
| B2D20065H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D20065H1 THT Schottky diodes
B2D20065H1 THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.92 EUR |
| 19+ | 3.76 EUR |
| B2D20065HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D20065HC1 THT Schottky diodes
B2D20065HC1 THT Schottky diodes
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.92 EUR |
| 18+ | 4.12 EUR |
| 19+ | 3.9 EUR |
| 600+ | 3.8 EUR |
| B2D20065TF |
Hersteller: BASiC SEMICONDUCTOR
B2D20065TF THT Schottky diodes
B2D20065TF THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.08 EUR |
| 18+ | 3.99 EUR |
| 19+ | 3.78 EUR |
| B2D20120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D20120H1 THT Schottky diodes
B2D20120H1 THT Schottky diodes
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.36 EUR |
| 15+ | 4.99 EUR |
| 16+ | 4.7 EUR |
| B2D20120HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D20120HC1 THT Schottky diodes
B2D20120HC1 THT Schottky diodes
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.36 EUR |
| 15+ | 4.82 EUR |
| 16+ | 4.56 EUR |
| B2D30065H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D30065H1 THT Schottky diodes
B2D30065H1 THT Schottky diodes
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.54 EUR |
| 11+ | 6.58 EUR |
| B2D30065HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D30065HC1 THT Schottky diodes
B2D30065HC1 THT Schottky diodes
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.89 EUR |
| 13+ | 5.51 EUR |
| B2D30120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D30120H1 THT Schottky diodes
B2D30120H1 THT Schottky diodes
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.37 EUR |
| 7+ | 10.44 EUR |
| 8+ | 9.87 EUR |
| B2D30120HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D30120HC1 THT Schottky diodes
B2D30120HC1 THT Schottky diodes
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.05 EUR |
| 10+ | 7.52 EUR |
| 11+ | 7.12 EUR |
| 600+ | 7.11 EUR |
| B2D40065H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D40065H1 THT Schottky diodes
B2D40065H1 THT Schottky diodes
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.14 EUR |
| 8+ | 9.5 EUR |
| 30+ | 9.38 EUR |
| B2D40120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D40120H1 THT Schottky diodes
B2D40120H1 THT Schottky diodes
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.92 EUR |
| 5+ | 14.44 EUR |
| 6+ | 13.64 EUR |
| 30+ | 13.51 EUR |
| B2D40120HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D40120HC1 THT Schottky diodes
B2D40120HC1 THT Schottky diodes
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.73 EUR |
| 8+ | 9.5 EUR |
| B2D60120H1 |
Hersteller: BASiC SEMICONDUCTOR
B2D60120H1 THT Schottky diodes
B2D60120H1 THT Schottky diodes
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 23.71 EUR |
| 5+ | 16.44 EUR |
| B2M032120Y |
![]() |
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 40nC
On-state resistance: 50mΩ
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 40nC
On-state resistance: 50mΩ
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Drain-source voltage: 1.2kV
Polarisation: unipolar
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.13 EUR |
| 5+ | 17.29 EUR |
| 10+ | 15.22 EUR |
| 30+ | 14.2 EUR |
| B2M032120Y |
![]() |
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 40nC
On-state resistance: 50mΩ
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 40nC
On-state resistance: 50mΩ
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.13 EUR |
| 5+ | 17.29 EUR |
| 10+ | 15.22 EUR |
| 30+ | 14.2 EUR |
| B2M065120H |
Hersteller: BASiC SEMICONDUCTOR
B2M065120H THT N channel transistors
B2M065120H THT N channel transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 14 EUR |
| 7+ | 10.5 EUR |
| 8+ | 9.92 EUR |
| B2M065120R |
![]() |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.49 EUR |
| 6+ | 13.18 EUR |
| 10+ | 11.65 EUR |
| 30+ | 10.42 EUR |
| B2M065120R |
![]() |
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.49 EUR |
| 6+ | 13.18 EUR |
| 10+ | 11.65 EUR |
| 30+ | 10.42 EUR |
| B2M065120Z |
Hersteller: BASiC SEMICONDUCTOR
B2M065120Z THT N channel transistors
B2M065120Z THT N channel transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.14 EUR |
| 7+ | 10.22 EUR |
| 8+ | 9.68 EUR |
| 30+ | 9.4 EUR |
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