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B1D06065KF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.73V Power dissipation: 23W Max. forward impulse current: 45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D10065KS | BASiC SEMICONDUCTOR | B1D10065KS THT Schottky diodes |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 112A Leakage current: 10µA Kind of package: tube Power dissipation: 84W |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 112A Leakage current: 10µA Kind of package: tube Power dissipation: 84W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D16065HC | BASiC SEMICONDUCTOR | B1D16065HC THT Schottky diodes |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D20065HC | BASiC SEMICONDUCTOR | B1D20065HC THT Schottky diodes |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M080120HC | BASiC SEMICONDUCTOR | B1M080120HC THT N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | B1M080120HK THT N channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W |
auf Bestellung 3339 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3339 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D04065D | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2451 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | B2D06065E1 SMD Schottky diodes |
auf Bestellung 2445 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | B2D16065HC1 THT Schottky diodes |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D20065F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D20065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D20065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D20065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D20065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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B2D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
| B1D06065KF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B1D06065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| B1D06065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 15+ | 4.76 EUR |
| 39+ | 1.83 EUR |
| 100+ | 1.09 EUR |
| B1D08065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B1D08065K |
![]() |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| B1D08065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 5+ | 14.3 EUR |
| 11+ | 6.51 EUR |
| 29+ | 2.46 EUR |
| B1D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| B1D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| 29+ | 2.46 EUR |
| B1D10065H |
Hersteller: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 9+ | 7.95 EUR |
| 23+ | 3.1 EUR |
| 600+ | 1.92 EUR |
| B1D10065KS |
Hersteller: BASiC SEMICONDUCTOR
B1D10065KS THT Schottky diodes
B1D10065KS THT Schottky diodes
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 31+ | 2.3 EUR |
| 500+ | 1.8 EUR |
| B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 15+ | 4.76 EUR |
| 100+ | 2.8 EUR |
| B1D16065HC |
Hersteller: BASiC SEMICONDUCTOR
B1D16065HC THT Schottky diodes
B1D16065HC THT Schottky diodes
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 6+ | 11.91 EUR |
| 14+ | 5.11 EUR |
| 600+ | 3.02 EUR |
| B1D20065HC |
Hersteller: BASiC SEMICONDUCTOR
B1D20065HC THT Schottky diodes
B1D20065HC THT Schottky diodes
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.52 EUR |
| 16+ | 4.63 EUR |
| 17+ | 4.38 EUR |
| 600+ | 4.2 EUR |
| B1D30065TF |
Hersteller: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.12 EUR |
| 13+ | 5.62 EUR |
| 600+ | 5.41 EUR |
| B1D40065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 10+ | 7.46 EUR |
| B1D40065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 10+ | 7.46 EUR |
| 150+ | 7.18 EUR |
| B1M080120HC |
Hersteller: BASiC SEMICONDUCTOR
B1M080120HC THT N channel transistors
B1M080120HC THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 4+ | 18.49 EUR |
| 600+ | 18.3 EUR |
| B1M080120HK |
Hersteller: BASiC SEMICONDUCTOR
B1M080120HK THT N channel transistors
B1M080120HK THT N channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 4+ | 19.66 EUR |
| 600+ | 18.9 EUR |
| B2D02120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
auf Bestellung 3339 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 67+ | 1.07 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| 500+ | 0.83 EUR |
| B2D02120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3339 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 67+ | 1.07 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| 500+ | 0.83 EUR |
| B2D02120K1 |
Hersteller: BASiC SEMICONDUCTOR
B2D02120K1 THT Schottky diodes
B2D02120K1 THT Schottky diodes
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 93+ | 0.77 EUR |
| 99+ | 0.73 EUR |
| B2D04065D |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
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| B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 77+ | 0.93 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.74 EUR |
| B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2451 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 77+ | 0.93 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.74 EUR |
| B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| 54+ | 1.33 EUR |
| B2D05120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 47+ | 1.53 EUR |
| 51+ | 1.42 EUR |
| B2D05120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 47+ | 1.53 EUR |
| 51+ | 1.42 EUR |
| B2D06065E1 |
Hersteller: BASiC SEMICONDUCTOR
B2D06065E1 SMD Schottky diodes
B2D06065E1 SMD Schottky diodes
auf Bestellung 2445 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
| 500+ | 1.1 EUR |
| B2D06065K1 |
Hersteller: BASiC SEMICONDUCTOR
B2D06065K1 THT Schottky diodes
B2D06065K1 THT Schottky diodes
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| B2D06065KF1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 45+ | 1.62 EUR |
| 49+ | 1.49 EUR |
| 50+ | 1.43 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.36 EUR |
| B2D06065KF1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 153 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 45+ | 1.62 EUR |
| 49+ | 1.49 EUR |
| 50+ | 1.43 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.36 EUR |
| B2D08065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| B2D08065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 11+ | 6.51 EUR |
| 25+ | 2.86 EUR |
| 30+ | 2.39 EUR |
| 100+ | 1.4 EUR |
| B2D08065K1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 46+ | 1.56 EUR |
| 49+ | 1.47 EUR |
| B2D08065K1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 46+ | 1.56 EUR |
| 49+ | 1.47 EUR |
| 100+ | 1.46 EUR |
| B2D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| B2D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| 100+ | 1.4 EUR |
| B2D10065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 32+ | 2.29 EUR |
| 41+ | 1.74 EUR |
| 44+ | 1.66 EUR |
| B2D10065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 222 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 32+ | 2.29 EUR |
| 41+ | 1.74 EUR |
| 44+ | 1.66 EUR |
| B2D10065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.9 EUR |
| 28+ | 2.62 EUR |
| 36+ | 2 EUR |
| 38+ | 1.9 EUR |
| B2D10065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.9 EUR |
| 28+ | 2.62 EUR |
| 36+ | 2 EUR |
| 38+ | 1.9 EUR |
| B2D10120H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 22+ | 3.37 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
| B2D10120H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 22+ | 3.37 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
| 600+ | 2.4 EUR |
| B2D10120HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| B2D10120HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 19+ | 3.76 EUR |
| 600+ | 2.27 EUR |
| B2D15120H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.78 EUR |
| 12+ | 6.11 EUR |
| 14+ | 5.16 EUR |
| 15+ | 4.88 EUR |
| B2D15120H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.78 EUR |
| 12+ | 6.11 EUR |
| 14+ | 5.16 EUR |
| 15+ | 4.88 EUR |
| 30+ | 4.83 EUR |
| B2D16065HC1 |
Hersteller: BASiC SEMICONDUCTOR
B2D16065HC1 THT Schottky diodes
B2D16065HC1 THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.05 EUR |
| 20+ | 3.69 EUR |
| 21+ | 3.49 EUR |
| B2D16120HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.39 EUR |
| 20+ | 3.72 EUR |
| 21+ | 3.52 EUR |
| B2D16120HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.39 EUR |
| 20+ | 3.72 EUR |
| 21+ | 3.52 EUR |
| 600+ | 3.46 EUR |
| B2D20065F1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.42 EUR |
| 19+ | 3.96 EUR |
| 20+ | 3.75 EUR |
| 25+ | 3.59 EUR |
| B2D20065F1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.42 EUR |
| 19+ | 3.96 EUR |
| 20+ | 3.75 EUR |
| 25+ | 3.59 EUR |
| B2D20065H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 15+ | 5.05 EUR |
| 19+ | 3.88 EUR |
| 20+ | 3.66 EUR |
| B2D20065H1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 15+ | 5.05 EUR |
| 19+ | 3.88 EUR |
| 20+ | 3.66 EUR |
| B2D20065HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 18+ | 4.06 EUR |
| 19+ | 3.85 EUR |
| B2D20065HC1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 18+ | 4.06 EUR |
| 19+ | 3.85 EUR |
| 150+ | 3.75 EUR |
| 600+ | 3.7 EUR |
| B2D20065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| B2D20065TF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.6 EUR |
| 30+ | 3.58 EUR |
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