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B1D03120E BASiC SEMICONDUCTOR B1D03120E SMD Schottky diodes
Produkt ist nicht verfügbar
B1D04065KF B1D04065KF BASiC SEMICONDUCTOR B1D04065KF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 10µA
Power dissipation: 13W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
B1D05120E B1D05120E BASiC SEMICONDUCTOR B1D05120E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Produkt ist nicht verfügbar
B1D05120E B1D05120E BASiC SEMICONDUCTOR B1D05120E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065F B1D06065F BASiC SEMICONDUCTOR B1D06065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065F B1D06065F BASiC SEMICONDUCTOR B1D06065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065K B1D06065K BASiC SEMICONDUCTOR B1D06065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube
Mounting: THT
Case: TO220-2
Power dissipation: 42W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
B1D06065KF B1D06065KF BASiC SEMICONDUCTOR B1D06065KF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 23W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 45A
Max. forward voltage: 1.73V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065KS B1D06065KS BASiC SEMICONDUCTOR B1D06065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
38+ 1.89 EUR
Mindestbestellmenge: 36
B1D06065KS B1D06065KS BASiC SEMICONDUCTOR B1D06065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
38+ 1.89 EUR
Mindestbestellmenge: 36
B1D08065F B1D08065F BASiC SEMICONDUCTOR B1D08065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 48W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
B1D08065F B1D08065F BASiC SEMICONDUCTOR B1D08065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 48W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D08065K B1D08065K BASiC SEMICONDUCTOR B1D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Type of diode: Schottky rectifying
Case: TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 56W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
B1D08065K B1D08065K BASiC SEMICONDUCTOR B1D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Type of diode: Schottky rectifying
Case: TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 56W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.76 EUR
29+ 2.46 EUR
100+ 1.46 EUR
500+ 1.44 EUR
Mindestbestellmenge: 15
B1D08065KF B1D08065KF BASiC SEMICONDUCTOR B1D08065KF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Power dissipation: 20W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.69V
Load current: 8A
Semiconductor structure: single diode
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
B1D08065KS B1D08065KS BASiC SEMICONDUCTOR B1D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
35+ 2.07 EUR
38+ 1.89 EUR
Mindestbestellmenge: 32
B1D08065KS B1D08065KS BASiC SEMICONDUCTOR B1D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
35+ 2.07 EUR
38+ 1.89 EUR
Mindestbestellmenge: 32
B1D10065E B1D10065E BASiC SEMICONDUCTOR B1D10065E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 50W
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D10065E B1D10065E BASiC SEMICONDUCTOR B1D10065E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 50W
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065F B1D10065F BASiC SEMICONDUCTOR B1D10065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 58W
Semiconductor structure: single diode
Case: TO263-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D10065F B1D10065F BASiC SEMICONDUCTOR B1D10065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 58W
Semiconductor structure: single diode
Case: TO263-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065H B1D10065H BASiC SEMICONDUCTOR B1D10065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 68W
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
B1D10065H B1D10065H BASiC SEMICONDUCTOR B1D10065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 68W
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.2 EUR
23+ 3.1 EUR
150+ 1.89 EUR
600+ 1.86 EUR
Mindestbestellmenge: 17
B1D10065KS B1D10065KS BASiC SEMICONDUCTOR B1D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.9 EUR
28+ 2.62 EUR
35+ 2.04 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
B1D10065KS B1D10065KS BASiC SEMICONDUCTOR B1D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.9 EUR
28+ 2.62 EUR
35+ 2.04 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
B1D10120E BASiC SEMICONDUCTOR B1D10120E SMD Schottky diodes
Produkt ist nicht verfügbar
B1D15065K B1D15065K BASiC SEMICONDUCTOR B1D15065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube
Mounting: THT
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.09 EUR
20+ 3.68 EUR
21+ 3.4 EUR
Mindestbestellmenge: 18
B1D15065K B1D15065K BASiC SEMICONDUCTOR B1D15065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube
Mounting: THT
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.09 EUR
20+ 3.68 EUR
21+ 3.4 EUR
500+ 2.79 EUR
Mindestbestellmenge: 18
B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.96 EUR
21+ 3.4 EUR
Mindestbestellmenge: 15
B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.96 EUR
21+ 3.4 EUR
600+ 3.19 EUR
Mindestbestellmenge: 15
B1D20065HC B1D20065HC BASiC SEMICONDUCTOR B1D20065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.91 EUR
16+ 4.7 EUR
17+ 4.45 EUR
Mindestbestellmenge: 11
B1D20065HC B1D20065HC BASiC SEMICONDUCTOR B1D20065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.91 EUR
16+ 4.7 EUR
17+ 4.45 EUR
Mindestbestellmenge: 11
B1D30065TF B1D30065TF BASiC SEMICONDUCTOR B1D30065TF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.45 EUR
12+ 6.06 EUR
13+ 5.73 EUR
Mindestbestellmenge: 9
B1D30065TF B1D30065TF BASiC SEMICONDUCTOR B1D30065TF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.45 EUR
12+ 6.06 EUR
13+ 5.73 EUR
150+ 5.62 EUR
600+ 5.51 EUR
Mindestbestellmenge: 9
B1D40065H BASiC SEMICONDUCTOR B1D40065H THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.8 EUR
9+ 8.15 EUR
10+ 7.69 EUR
600+ 7.59 EUR
Mindestbestellmenge: 7
B1M080120HC B1M080120HC BASiC SEMICONDUCTOR B1M080120HC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.13 EUR
Mindestbestellmenge: 4
B1M080120HC B1M080120HC BASiC SEMICONDUCTOR B1M080120HC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.13 EUR
600+ 17.45 EUR
Mindestbestellmenge: 4
B1M080120HK B1M080120HK BASiC SEMICONDUCTOR B1M080120HK.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.29 EUR
Mindestbestellmenge: 4
B1M080120HK B1M080120HK BASiC SEMICONDUCTOR B1M080120HK.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.29 EUR
150+ 18.53 EUR
Mindestbestellmenge: 4
B2D02120E1 BASiC SEMICONDUCTOR B2D02120E1 SMD Schottky diodes
auf Bestellung 3751 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.37 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 53
B2D02120K1 B2D02120K1 BASiC SEMICONDUCTOR B2D02120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Leakage current: 20µA
Max. forward impulse current: 20A
Load current: 2A
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
74+ 0.98 EUR
90+ 0.8 EUR
95+ 0.76 EUR
Mindestbestellmenge: 66
B2D02120K1 B2D02120K1 BASiC SEMICONDUCTOR B2D02120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Leakage current: 20µA
Max. forward impulse current: 20A
Load current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
74+ 0.98 EUR
90+ 0.8 EUR
95+ 0.76 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
B2D04065D BASiC SEMICONDUCTOR B2D04065D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Produkt ist nicht verfügbar
B2D04065D BASiC SEMICONDUCTOR B2D04065D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065D1 BASiC SEMICONDUCTOR B2D04065D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065D1 BASiC SEMICONDUCTOR B2D04065D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
57+ 1.26 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 52
B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2478 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
57+ 1.26 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 52
B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
Mindestbestellmenge: 44
B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
63+ 1.13 EUR
Mindestbestellmenge: 44
B2D04065KF1 BASiC SEMICONDUCTOR B2D04065KF1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065KF1 BASiC SEMICONDUCTOR B2D04065KF1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V BASiC SEMICONDUCTOR B2D04065V.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: SMB flat
Kind of package: reel; tape
Leakage current: 5µA
Max. forward impulse current: 32A
Power dissipation: 10W
Produkt ist nicht verfügbar
B2D04065V BASiC SEMICONDUCTOR B2D04065V.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: SMB flat
Kind of package: reel; tape
Leakage current: 5µA
Max. forward impulse current: 32A
Power dissipation: 10W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V1 BASiC SEMICONDUCTOR B2D04065V1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D04065V1 BASiC SEMICONDUCTOR B2D04065V1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120E1 BASiC SEMICONDUCTOR B2D05120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D05120E1 BASiC SEMICONDUCTOR B2D05120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120K1 B2D05120K1 BASiC SEMICONDUCTOR B2D05120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Type of diode: Schottky rectifying
Leakage current: 30µA
Max. forward impulse current: 55A
Load current: 5A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
B2D05120K1 B2D05120K1 BASiC SEMICONDUCTOR B2D05120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Type of diode: Schottky rectifying
Leakage current: 30µA
Max. forward impulse current: 55A
Load current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
14+ 5.11 EUR
38+ 1.89 EUR
500+ 1.12 EUR
Mindestbestellmenge: 10
B1D03120E
Hersteller: BASiC SEMICONDUCTOR
B1D03120E SMD Schottky diodes
Produkt ist nicht verfügbar
B1D04065KF B1D04065KF.pdf
B1D04065KF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 10µA
Power dissipation: 13W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
Mindestbestellmenge: 2
B1D05120E B1D05120E.pdf
B1D05120E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Produkt ist nicht verfügbar
B1D05120E B1D05120E.pdf
B1D05120E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065F B1D06065F.pdf
B1D06065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065F B1D06065F.pdf
B1D06065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065K B1D06065K.pdf
B1D06065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube
Mounting: THT
Case: TO220-2
Power dissipation: 42W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
Mindestbestellmenge: 5
B1D06065KF B1D06065KF.pdf
B1D06065KF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 23W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 45A
Max. forward voltage: 1.73V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065KS B1D06065KS.pdf
B1D06065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
38+ 1.89 EUR
Mindestbestellmenge: 36
B1D06065KS B1D06065KS.pdf
B1D06065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
38+ 1.89 EUR
Mindestbestellmenge: 36
B1D08065F B1D08065F.pdf
B1D08065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 48W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
B1D08065F B1D08065F.pdf
B1D08065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 48W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D08065K B1D08065K.pdf
B1D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Type of diode: Schottky rectifying
Case: TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 56W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
Mindestbestellmenge: 15
B1D08065K B1D08065K.pdf
B1D08065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Type of diode: Schottky rectifying
Case: TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 56W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
29+ 2.46 EUR
100+ 1.46 EUR
500+ 1.44 EUR
Mindestbestellmenge: 15
B1D08065KF B1D08065KF.pdf
B1D08065KF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Power dissipation: 20W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.69V
Load current: 8A
Semiconductor structure: single diode
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
Mindestbestellmenge: 3
B1D08065KS B1D08065KS.pdf
B1D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
35+ 2.07 EUR
38+ 1.89 EUR
Mindestbestellmenge: 32
B1D08065KS B1D08065KS.pdf
B1D08065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
35+ 2.07 EUR
38+ 1.89 EUR
Mindestbestellmenge: 32
B1D10065E B1D10065E.pdf
B1D10065E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 50W
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D10065E B1D10065E.pdf
B1D10065E
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 50W
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065F B1D10065F.pdf
B1D10065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 58W
Semiconductor structure: single diode
Case: TO263-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D10065F B1D10065F.pdf
B1D10065F
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 58W
Semiconductor structure: single diode
Case: TO263-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065H B1D10065H.pdf
B1D10065H
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 68W
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.2 EUR
Mindestbestellmenge: 17
B1D10065H B1D10065H.pdf
B1D10065H
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 68W
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.2 EUR
23+ 3.1 EUR
150+ 1.89 EUR
600+ 1.86 EUR
Mindestbestellmenge: 17
B1D10065KS B1D10065KS.pdf
B1D10065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.9 EUR
28+ 2.62 EUR
35+ 2.04 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
B1D10065KS B1D10065KS.pdf
B1D10065KS
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO220ISO
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.9 EUR
28+ 2.62 EUR
35+ 2.04 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
B1D10120E
Hersteller: BASiC SEMICONDUCTOR
B1D10120E SMD Schottky diodes
Produkt ist nicht verfügbar
B1D15065K B1D15065K.pdf
B1D15065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube
Mounting: THT
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.09 EUR
20+ 3.68 EUR
21+ 3.4 EUR
Mindestbestellmenge: 18
B1D15065K B1D15065K.pdf
B1D15065K
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube
Mounting: THT
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.09 EUR
20+ 3.68 EUR
21+ 3.4 EUR
500+ 2.79 EUR
Mindestbestellmenge: 18
B1D16065HC B1D16065HC.pdf
B1D16065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.96 EUR
21+ 3.4 EUR
Mindestbestellmenge: 15
B1D16065HC B1D16065HC.pdf
B1D16065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.96 EUR
21+ 3.4 EUR
600+ 3.19 EUR
Mindestbestellmenge: 15
B1D20065HC B1D20065HC.pdf
B1D20065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.91 EUR
16+ 4.7 EUR
17+ 4.45 EUR
Mindestbestellmenge: 11
B1D20065HC B1D20065HC.pdf
B1D20065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.91 EUR
16+ 4.7 EUR
17+ 4.45 EUR
Mindestbestellmenge: 11
B1D30065TF B1D30065TF.pdf
B1D30065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+8.45 EUR
12+ 6.06 EUR
13+ 5.73 EUR
Mindestbestellmenge: 9
B1D30065TF B1D30065TF.pdf
B1D30065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.45 EUR
12+ 6.06 EUR
13+ 5.73 EUR
150+ 5.62 EUR
600+ 5.51 EUR
Mindestbestellmenge: 9
B1D40065H
Hersteller: BASiC SEMICONDUCTOR
B1D40065H THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.8 EUR
9+ 8.15 EUR
10+ 7.69 EUR
600+ 7.59 EUR
Mindestbestellmenge: 7
B1M080120HC B1M080120HC.pdf
B1M080120HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+18.13 EUR
Mindestbestellmenge: 4
B1M080120HC B1M080120HC.pdf
B1M080120HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+18.13 EUR
600+ 17.45 EUR
Mindestbestellmenge: 4
B1M080120HK B1M080120HK.pdf
B1M080120HK
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+19.29 EUR
Mindestbestellmenge: 4
B1M080120HK B1M080120HK.pdf
B1M080120HK
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.29 EUR
150+ 18.53 EUR
Mindestbestellmenge: 4
B2D02120E1
Hersteller: BASiC SEMICONDUCTOR
B2D02120E1 SMD Schottky diodes
auf Bestellung 3751 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 53
B2D02120K1 B2D02120K1.pdf
B2D02120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Leakage current: 20µA
Max. forward impulse current: 20A
Load current: 2A
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
74+ 0.98 EUR
90+ 0.8 EUR
95+ 0.76 EUR
Mindestbestellmenge: 66
B2D02120K1 B2D02120K1.pdf
B2D02120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Leakage current: 20µA
Max. forward impulse current: 20A
Load current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
74+ 0.98 EUR
90+ 0.8 EUR
95+ 0.76 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
B2D04065D B2D04065D.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Produkt ist nicht verfügbar
B2D04065D B2D04065D.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065D1 B2D04065D1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065D1 B2D04065D1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065E1 B2D04065E1.pdf
B2D04065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
52+1.4 EUR
57+ 1.26 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 52
B2D04065E1 B2D04065E1.pdf
B2D04065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2478 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.4 EUR
57+ 1.26 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 52
B2D04065K1 B2D04065K1.pdf
B2D04065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
Mindestbestellmenge: 44
B2D04065K1 B2D04065K1.pdf
B2D04065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
63+ 1.13 EUR
Mindestbestellmenge: 44
B2D04065KF1 B2D04065KF1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065KF1 B2D04065KF1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V B2D04065V.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: SMB flat
Kind of package: reel; tape
Leakage current: 5µA
Max. forward impulse current: 32A
Power dissipation: 10W
Produkt ist nicht verfügbar
B2D04065V B2D04065V.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: SMB flat
Kind of package: reel; tape
Leakage current: 5µA
Max. forward impulse current: 32A
Power dissipation: 10W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V1 B2D04065V1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D04065V1 B2D04065V1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120E1 B2D05120E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D05120E1 B2D05120E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120K1 B2D05120K1.pdf
B2D05120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Type of diode: Schottky rectifying
Leakage current: 30µA
Max. forward impulse current: 55A
Load current: 5A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
Mindestbestellmenge: 10
B2D05120K1 B2D05120K1.pdf
B2D05120K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Type of diode: Schottky rectifying
Leakage current: 30µA
Max. forward impulse current: 55A
Load current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
14+ 5.11 EUR
38+ 1.89 EUR
500+ 1.12 EUR
Mindestbestellmenge: 10
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