Produkte > BASIC SEMICONDUCTOR > Alle Produkte des Herstellers BASIC SEMICONDUCTOR (25) > Seite 1 nach 1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
B1D20065HC B1D20065HC BASiC SEMICONDUCTOR B1D20065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
15+4.98 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D02120E1 B2D02120E1 BASiC SEMICONDUCTOR B2D02120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
auf Bestellung 3276 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
66+1.09 EUR
76+0.94 EUR
100+0.86 EUR
500+0.83 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
79+0.92 EUR
88+0.82 EUR
100+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
B2D16065HC1 B2D16065HC1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
19+3.92 EUR
21+3.46 EUR
30+3.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065F1 B2D20065F1 BASiC SEMICONDUCTOR B2D20065F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 13µA
Load current: 20A
Power dissipation: 100W
Max. forward impulse current: 140A
Max. forward voltage: 1.67V
Max. off-state voltage: 650V
Kind of package: reel; tape
Case: TO263-2
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
20+3.63 EUR
25+3.62 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065H1 B2D20065H1 BASiC SEMICONDUCTOR B2D20065H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Mounting: THT
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 15µA
Load current: 20A
Power dissipation: 130W
Max. forward impulse current: 146A
Max. forward voltage: 1.7V
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-2
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.03 EUR
16+4.52 EUR
18+4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 B2D20065HC1 BASiC SEMICONDUCTOR B2D20065HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.03 EUR
16+4.52 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065TF B2D20065TF BASiC SEMICONDUCTOR B2D20065TF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
20+3.6 EUR
30+3.59 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR B2D20120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 40µA
Max. forward voltage: 1.78V
Power dissipation: 159W
Load current: 20A
Max. forward impulse current: 190A
Max. off-state voltage: 1.2kV
Case: TO247-2
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.63 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.48 EUR
10+11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B3DM060065N BASiC SEMICONDUCTOR B3DM060065N.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: double independent
Type of semiconductor module: diode
Kind of package: tube
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.85 EUR
8+9.78 EUR
10+8.65 EUR
30+7.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524R BTL27524R BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
72+1 EUR
82+0.88 EUR
100+0.79 EUR
250+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Frequency: 0.5MHz
Kind of package: reel; tape
Output current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Frequency: 0.5MHz
Kind of package: reel; tape
Output current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B1D16065HC B1D16065HC.pdf
B1D16065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
B1D20065HC B1D20065HC.pdf
B1D20065HC
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
15+4.98 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
B2D02120E1 B2D02120E1.pdf
B2D02120E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
auf Bestellung 3276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
66+1.09 EUR
76+0.94 EUR
100+0.86 EUR
500+0.83 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065E1 B2D04065E1.pdf
B2D04065E1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
79+0.92 EUR
88+0.82 EUR
100+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
B2D04065K1 B2D04065K1.pdf
B2D04065K1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
B2D16065HC1
B2D16065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
19+3.92 EUR
21+3.46 EUR
30+3.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065F1 B2D20065F1.pdf
B2D20065F1
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 13µA
Load current: 20A
Power dissipation: 100W
Max. forward impulse current: 140A
Max. forward voltage: 1.67V
Max. off-state voltage: 650V
Kind of package: reel; tape
Case: TO263-2
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
20+3.63 EUR
25+3.62 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065H1 B2D20065H1.pdf
B2D20065H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Mounting: THT
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 15µA
Load current: 20A
Power dissipation: 130W
Max. forward impulse current: 146A
Max. forward voltage: 1.7V
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-2
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
16+4.52 EUR
18+4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065HC1 B2D20065HC1.pdf
B2D20065HC1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
16+4.52 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
B2D20065TF B2D20065TF.pdf
B2D20065TF
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.6 EUR
30+3.59 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
B2D20120H1 B2D20120H1.pdf
B2D20120H1
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 40µA
Max. forward voltage: 1.78V
Power dissipation: 159W
Load current: 20A
Max. forward impulse current: 190A
Max. off-state voltage: 1.2kV
Case: TO247-2
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.63 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z.pdf
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
10+11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
B3DM060065N B3DM060065N.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: double independent
Type of semiconductor module: diode
Kind of package: tube
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF
BGH40N120HF
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.85 EUR
8+9.78 EUR
10+8.65 EUR
30+7.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.93 EUR
6+13.51 EUR
30+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.24 EUR
30+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.01 EUR
7+10.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524R
BTL27524R
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
72+1 EUR
82+0.88 EUR
100+0.79 EUR
250+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP2845DSR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Frequency: 0.5MHz
Kind of package: reel; tape
Output current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTP3845DSR
Hersteller: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Frequency: 0.5MHz
Kind of package: reel; tape
Output current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH