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B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.94 EUR
9+8.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.94 EUR
9+8.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+10.28 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+10.28 EUR
600+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.16 EUR
7+11.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.16 EUR
7+11.15 EUR
150+10.75 EUR
600+10.72 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.26 EUR
7+10.55 EUR
8+9.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+14.26 EUR
7+10.55 EUR
8+9.97 EUR
150+9.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Produkt ist nicht verfügbar
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BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Produkt ist nicht verfügbar
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BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+10.98 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+10.98 EUR
150+10.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOW8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOW8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 5kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECWR BASiC SEMICONDUCTOR BTD5350ECWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBPR BASiC SEMICONDUCTOR BTD5350MBPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBWR BASiC SEMICONDUCTOR BTD5350MBWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MCPR BASiC SEMICONDUCTOR BTD5350MCPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MCWR BASiC SEMICONDUCTOR BTD5350MCWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SBPR BASiC SEMICONDUCTOR BTD5350SBPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SBWR BASiC SEMICONDUCTOR BTD5350SBWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SCPR BASiC SEMICONDUCTOR BTD5350SCPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SCWR BASiC SEMICONDUCTOR BTD5350SCWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27523BR BASiC SEMICONDUCTOR BTL27523BR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27523R BASiC SEMICONDUCTOR BTL27523R MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524BR BASiC SEMICONDUCTOR BTL27524BR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524R BTL27524R BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Case: SOP8
Supply voltage: 4.5...20V DC
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
72+1.00 EUR
92+0.78 EUR
98+0.74 EUR
250+0.73 EUR
1000+0.71 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
B2M065120Z B2M065120Z.pdf
B2M065120Z
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF
BGH40N120HF
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HF
BGH40N120HF
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.94 EUR
9+8.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: Field Stop; SiC SBD; Trench
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.94 EUR
9+8.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.28 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.28 EUR
600+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.16 EUR
7+11.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.16 EUR
7+11.15 EUR
150+10.75 EUR
600+10.72 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.55 EUR
8+9.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.55 EUR
8+9.97 EUR
150+9.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.98 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.98 EUR
150+10.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520MBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SAWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD21520SBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Supply voltage: 3...18V DC
Operating temperature: -40...125°C
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOW8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350EBWR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOW8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 5kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECPR
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Mounting: SMD
Output current: 10A
Case: SOP8
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Insulation voltage: 3kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350ECWR
Hersteller: BASiC SEMICONDUCTOR
BTD5350ECWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBPR
Hersteller: BASiC SEMICONDUCTOR
BTD5350MBPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MBWR
Hersteller: BASiC SEMICONDUCTOR
BTD5350MBWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MCPR
Hersteller: BASiC SEMICONDUCTOR
BTD5350MCPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350MCWR
Hersteller: BASiC SEMICONDUCTOR
BTD5350MCWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SBPR
Hersteller: BASiC SEMICONDUCTOR
BTD5350SBPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SBWR
Hersteller: BASiC SEMICONDUCTOR
BTD5350SBWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SCPR
Hersteller: BASiC SEMICONDUCTOR
BTD5350SCPR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTD5350SCWR
Hersteller: BASiC SEMICONDUCTOR
BTD5350SCWR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27523BR
Hersteller: BASiC SEMICONDUCTOR
BTL27523BR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27523R
Hersteller: BASiC SEMICONDUCTOR
BTL27523R MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524BR
Hersteller: BASiC SEMICONDUCTOR
BTL27524BR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTL27524R
BTL27524R
Hersteller: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Case: SOP8
Supply voltage: 4.5...20V DC
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
72+1.00 EUR
92+0.78 EUR
98+0.74 EUR
250+0.73 EUR
1000+0.71 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
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