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CBR06P65HL CBR06P65HL Bruckewell Description: SIC SCHOTTKY DIODE,650V,6A,DFN 8
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
Mindestbestellmenge: 6
CBR08P65D CBR08P65D Bruckewell CBR08P65D.pdf Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
CBR08P65D CBR08P65D Bruckewell CBR08P65D.pdf Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
Mindestbestellmenge: 6
CBR10P65 CBR10P65 Bruckewell CBR10P65.pdf Description: SIC SCHOTTKY DIODE,650V,10A,TO-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
10+ 3.71 EUR
Mindestbestellmenge: 4
CBR10P65HL CBR10P65HL Bruckewell CBR10P65HL.pdf Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
CBR10P65HL CBR10P65HL Bruckewell CBR10P65HL.pdf Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
Mindestbestellmenge: 4
CBR20120PC CBR20120PC Bruckewell CBR20120PC.pdf Description: DIODE ARR SIC 1200V 20A TO220-3L
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.62 EUR
CBR20P65PC CBR20P65PC Bruckewell CBR20P65PC.pdf Description: DIODE ARR SIC 650V 21A TO220-3L
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21A
Supplier Device Package: TO-220-3L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
10+ 7.11 EUR
Mindestbestellmenge: 3
MS23N06A MS23N06A Bruckewell MS23N06A.pdf Description: N-Channel MOSFET,30V,5.8A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
Mindestbestellmenge: 59
MS23P05 MS23P05 Bruckewell MS23P05.pdf Description: P-CH MOSFET,-20V,-3.1A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 15 V
auf Bestellung 2375 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
Mindestbestellmenge: 84
MS34N02 MS34N02 Bruckewell MS34N02.pdf Description: N-Channel MOSFET,30V,4.6A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4.6A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
Mindestbestellmenge: 42
MS40N05 MS40N05 Bruckewell MS40N05.pdf Description: N-Channel MOSFET,40V,5A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 15 V
auf Bestellung 1227 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
Mindestbestellmenge: 56
MS60P03 MS60P03 Bruckewell MS60P03.pdf Description: P-Channel MOSFET,60V,-60A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 6790 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
Mindestbestellmenge: 36
MSD60P16 MSD60P16 Bruckewell MSD60P16.pdf Description: P-Channel MOSFET,60V,-16A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
Mindestbestellmenge: 22
MSHM30N46 MSHM30N46 Bruckewell MSHM30N46.pdf Description: N-Channel MOSFET,30V,46A,DFN3x3
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
Mindestbestellmenge: 24
MSQ20N16 MSQ20N16 Bruckewell MSQ20N16.pdf Description: N-Channel MOSFET,20V,20A,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 12A, 4.5V
FET Feature: Standard
Supplier Device Package: 8-SOIC
Vgs (Max): ±8V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
Mindestbestellmenge: 27
MSQ30C01D MSQ30C01D Bruckewell MSQ30C01D.pdf Description: N+P-Channel MOSFET,dual,30V,TO-2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
Mindestbestellmenge: 31
MSQ30P07D MSQ30P07D Bruckewell MSQ30P05.pdf Description: P-Channel MOSFET,dual,30V,6.5A,T
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
Mindestbestellmenge: 24
US1M US1M Bruckewell US1A-M.pdf Description: Ultra Fast DIODE 1A 1000V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
auf Bestellung 81700 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
40+ 0.45 EUR
100+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.13 EUR
5000+ 0.1 EUR
Mindestbestellmenge: 30
CBR06P65HL
CBR06P65HL
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,6A,DFN 8
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.24 EUR
Mindestbestellmenge: 6
CBR08P65D CBR08P65D.pdf
CBR08P65D
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
CBR08P65D CBR08P65D.pdf
CBR08P65D
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.5 EUR
Mindestbestellmenge: 6
CBR10P65 CBR10P65.pdf
CBR10P65
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,TO-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
10+ 3.71 EUR
Mindestbestellmenge: 4
CBR10P65HL CBR10P65HL.pdf
CBR10P65HL
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
CBR10P65HL CBR10P65HL.pdf
CBR10P65HL
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
Mindestbestellmenge: 4
CBR20120PC CBR20120PC.pdf
CBR20120PC
Hersteller: Bruckewell
Description: DIODE ARR SIC 1200V 20A TO220-3L
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.62 EUR
CBR20P65PC CBR20P65PC.pdf
CBR20P65PC
Hersteller: Bruckewell
Description: DIODE ARR SIC 650V 21A TO220-3L
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21A
Supplier Device Package: TO-220-3L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.48 EUR
10+ 7.11 EUR
Mindestbestellmenge: 3
MS23N06A MS23N06A.pdf
MS23N06A
Hersteller: Bruckewell
Description: N-Channel MOSFET,30V,5.8A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
Mindestbestellmenge: 59
MS23P05 MS23P05.pdf
MS23P05
Hersteller: Bruckewell
Description: P-CH MOSFET,-20V,-3.1A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 15 V
auf Bestellung 2375 Stücke:
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84+0.21 EUR
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MS34N02 MS34N02.pdf
MS34N02
Hersteller: Bruckewell
Description: N-Channel MOSFET,30V,4.6A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4.6A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 1050 Stücke:
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42+0.42 EUR
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MS40N05 MS40N05.pdf
MS40N05
Hersteller: Bruckewell
Description: N-Channel MOSFET,40V,5A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 15 V
auf Bestellung 1227 Stücke:
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56+0.32 EUR
Mindestbestellmenge: 56
MS60P03 MS60P03.pdf
MS60P03
Hersteller: Bruckewell
Description: P-Channel MOSFET,60V,-60A,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 6790 Stücke:
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36+0.49 EUR
Mindestbestellmenge: 36
MSD60P16 MSD60P16.pdf
MSD60P16
Hersteller: Bruckewell
Description: P-Channel MOSFET,60V,-16A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
auf Bestellung 750 Stücke:
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22+0.83 EUR
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MSHM30N46 MSHM30N46.pdf
MSHM30N46
Hersteller: Bruckewell
Description: N-Channel MOSFET,30V,46A,DFN3x3
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 150 Stücke:
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Anzahl Preis ohne MwSt
24+0.74 EUR
Mindestbestellmenge: 24
MSQ20N16 MSQ20N16.pdf
MSQ20N16
Hersteller: Bruckewell
Description: N-Channel MOSFET,20V,20A,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 12A, 4.5V
FET Feature: Standard
Supplier Device Package: 8-SOIC
Vgs (Max): ±8V
auf Bestellung 50 Stücke:
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27+0.67 EUR
Mindestbestellmenge: 27
MSQ30C01D MSQ30C01D.pdf
MSQ30C01D
Hersteller: Bruckewell
Description: N+P-Channel MOSFET,dual,30V,TO-2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 930 Stücke:
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31+0.58 EUR
Mindestbestellmenge: 31
MSQ30P07D MSQ30P05.pdf
MSQ30P07D
Hersteller: Bruckewell
Description: P-Channel MOSFET,dual,30V,6.5A,T
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 1780 Stücke:
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24+0.76 EUR
Mindestbestellmenge: 24
US1M US1A-M.pdf
US1M
Hersteller: Bruckewell
Description: Ultra Fast DIODE 1A 1000V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
auf Bestellung 81700 Stücke:
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30+0.6 EUR
40+ 0.45 EUR
100+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.13 EUR
5000+ 0.1 EUR
Mindestbestellmenge: 30