CBR10P65HL Bruckewell
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 4-DFN (8x8)
Current - Average Rectified (Io): 30A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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Technische Details CBR10P65HL Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8, Current - Reverse Leakage @ Vr: 25 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: 4-DFN (8x8), Current - Average Rectified (Io): 30A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CBR10P65HL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CBR10P65HL | Bruckewell |
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8 Current - Reverse Leakage @ Vr: 25 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 4-DFN (8x8) Current - Average Rectified (Io): 30A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CBR10P65HL |
|
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 4-DFN (8x8)
Current - Average Rectified (Io): 30A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 4-DFN (8x8)
Current - Average Rectified (Io): 30A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH