CBR10P65HL Bruckewell
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5 Stücke
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Technische Details CBR10P65HL Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 30A, Supplier Device Package: 4-DFN (8x8), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 25 µA @ 650 V.
Weitere Produktangebote CBR10P65HL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CBR10P65HL | Bruckewell |
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 30A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CBR10P65HL |
|
Hersteller: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: SIC SCHOTTKY DIODE,650V,10A,DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH