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DFLZ9V1-7 DFLZ9V1-7 Diodes Incorporated DFLZ5V1-DFLZ39.pdf Description: DIODE ZENER 9.1V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+0.18 EUR
15000+0.16 EUR
Mindestbestellmenge: 3000
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DFLZ9V1-7 DFLZ9V1-7 Diodes Incorporated DFLZ5V1-DFLZ39.pdf Description: DIODE ZENER 9.1V 1W POWERDI 123
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
auf Bestellung 59456 Stücke:
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25+0.72 EUR
37+0.48 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 25
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BSS138WQ-7-F BSS138WQ-7-F Diodes Incorporated BSS138WQ.pdf Description: BSS FAMILY SOT323 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4658 Stücke:
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48+0.37 EUR
81+0.22 EUR
130+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 48
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GC0350015 GC0350015 Diodes Incorporated GC%2CGF_Series.pdf Description: CRYSTAL 3.5800MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Part Status: Active
ESR (Equivalent Series Resistance): 130 Ohms
Frequency: 3.58 MHz
auf Bestellung 17000 Stücke:
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1000+0.41 EUR
Mindestbestellmenge: 1000
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MMBT5401Q-7-F MMBT5401Q-7-F Diodes Incorporated ds30057.pdf Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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3000+0.045 EUR
6000+0.04 EUR
9000+0.037 EUR
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MMBT5401Q-7-F MMBT5401Q-7-F Diodes Incorporated ds30057.pdf Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 9957 Stücke:
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77+0.23 EUR
127+0.14 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
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ZXTP4003GTA ZXTP4003GTA Diodes Incorporated ZXTP4003G.pdf Description: TRANS PNP 100V 1A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 39000 Stücke:
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1000+0.45 EUR
2000+0.41 EUR
3000+0.39 EUR
5000+0.37 EUR
7000+0.35 EUR
10000+0.34 EUR
25000+0.32 EUR
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ZXTP4003GTA ZXTP4003GTA Diodes Incorporated ZXTP4003G.pdf Description: TRANS PNP 100V 1A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 39959 Stücke:
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12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
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BAV23CQ-13-F BAV23CQ-13-F Diodes Incorporated BAV23AQ_CQ_SQ.pdf Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 462299 Stücke:
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67+0.26 EUR
99+0.18 EUR
110+0.16 EUR
500+0.11 EUR
1000+0.088 EUR
2000+0.086 EUR
5000+0.084 EUR
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BAV23SQ-13-F BAV23SQ-13-F Diodes Incorporated BAV23A_C_S.pdf Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 860000 Stücke:
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10000+0.074 EUR
20000+0.069 EUR
Mindestbestellmenge: 10000
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BAV23SQ-13-F BAV23SQ-13-F Diodes Incorporated BAV23A_C_S.pdf Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 860113 Stücke:
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59+0.3 EUR
86+0.21 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.097 EUR
Mindestbestellmenge: 59
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BCP5316QTA BCP5316QTA Diodes Incorporated BCP5316Q.pdf Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4448WSFQ-7 1N4448WSFQ-7 Diodes Incorporated 1N4448WSF.pdf Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.065 EUR
6000+0.046 EUR
9000+0.04 EUR
15000+0.039 EUR
30000+0.037 EUR
75000+0.035 EUR
Mindestbestellmenge: 3000
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1N4448WSFQ-7 1N4448WSFQ-7 Diodes Incorporated 1N4448WSF.pdf Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207113 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
127+0.14 EUR
171+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
Mindestbestellmenge: 84
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DMT3003LFG-7 DMT3003LFG-7 Diodes Incorporated DMT3003LFG.pdf Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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2000+0.48 EUR
4000+0.44 EUR
Mindestbestellmenge: 2000
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DMT3003LFG-7 DMT3003LFG-7 Diodes Incorporated DMT3003LFG.pdf Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4318 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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DMT3009LFVW-7 DMT3009LFVW-7 Diodes Incorporated DMT3009LFVW.pdf Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 2000 Stücke:
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2000+0.38 EUR
Mindestbestellmenge: 2000
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DMT3009LFVW-7 DMT3009LFVW-7 Diodes Incorporated DMT3009LFVW.pdf Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 3231 Stücke:
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12+1.51 EUR
19+0.94 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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DMT3006LFV-13 DMT3006LFV-13 Diodes Incorporated DMT3006LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.4 EUR
6000+0.37 EUR
9000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000
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DMT3006LFV-13 DMT3006LFV-13 Diodes Incorporated DMT3006LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 35875 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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DMT3006LFVQ-7 DMT3006LFVQ-7 Diodes Incorporated DMT3006LFVQ.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.46 EUR
4000+0.42 EUR
6000+0.4 EUR
10000+0.38 EUR
Mindestbestellmenge: 2000
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DMT3006LFVQ-7 DMT3006LFVQ-7 Diodes Incorporated DMT3006LFVQ.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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100+0.73 EUR
500+0.57 EUR
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AP63200QWU-7 AP63200QWU-7 Diodes Incorporated AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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AP63201QWU-7 AP63201QWU-7 Diodes Incorporated AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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AP63203QWU-7 AP63203QWU-7 Diodes Incorporated AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf Description: IC REG BUCK 3.3V 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
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AP1694AEV10 AP1694AEV10 Diodes Incorporated AP1694AEV10-User-Guide.pdf Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 100 ~ 135 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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AP1694AEV11 AP1694AEV11 Diodes Incorporated AP1694AEV11UserGuide-v2.pdf Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 200 ~ 265 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PI4IOE5V6416RQ2LEX PI4IOE5V6416RQ2LEX Diodes Incorporated PI4IOE5V6416RQ-Product-Brief.pdf Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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PI4IOE5V6416RQ2LEX PI4IOE5V6416RQ2LEX Diodes Incorporated PI4IOE5V6416RQ-Product-Brief.pdf Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 67407 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+2.27 EUR
25+2.07 EUR
100+1.85 EUR
250+1.74 EUR
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1000+1.62 EUR
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BSS84DWQ-7 BSS84DWQ-7 Diodes Incorporated BSS84DWQ.pdf Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4466654 Stücke:
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25+0.72 EUR
41+0.43 EUR
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500+0.21 EUR
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ADTC114ECAQ-7 ADTC114ECAQ-7 Diodes Incorporated ADTC114ECAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.084 EUR
6000+0.075 EUR
9000+0.07 EUR
15000+0.065 EUR
21000+0.063 EUR
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75000+0.053 EUR
150000+0.049 EUR
300000+0.047 EUR
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ADTC114ECAQ-7 ADTC114ECAQ-7 Diodes Incorporated ADTC114ECAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114EE-7-F DDTC114EE-7-F Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTC114EE-7-F DDTC114EE-7-F Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 4850 Stücke:
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500+0.13 EUR
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ADTC114EUAQ-13 ADTC114EUAQ-13 Diodes Incorporated ADTC114EUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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ADTC114EUAQ-13 ADTC114EUAQ-13 Diodes Incorporated ADTC114EUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 22708 Stücke:
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63+0.28 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.062 EUR
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DPLS160-7 DPLS160-7 Diodes Incorporated ds31389.pdf Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
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3000+0.15 EUR
6000+0.14 EUR
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Mindestbestellmenge: 3000
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DPLS160-7 DPLS160-7 Diodes Incorporated ds31389.pdf Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
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500+0.2 EUR
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S1613A-50.0000(T) Diodes Incorporated Description: OSCILLATOR
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.071" (1.80mm)
Part Status: Last Time Buy
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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MMBT3904FZ-7B MMBT3904FZ-7B Diodes Incorporated MMBT3904FZ.pdf Description: TRANS NPN 40V 0.2A X2-DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
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10000+0.2 EUR
20000+0.19 EUR
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MMBT3904FZ-7B MMBT3904FZ-7B Diodes Incorporated MMBT3904FZ.pdf Description: TRANS NPN 40V 0.2A X2-DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
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17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2000+0.25 EUR
5000+0.22 EUR
Mindestbestellmenge: 17
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DMG7408SFG-7 DMG7408SFG-7 Diodes Incorporated DMG7408SFG.pdf Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
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50000+0.2 EUR
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DMG7408SFG-7 DMG7408SFG-7 Diodes Incorporated DMG7408SFG.pdf Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272574 Stücke:
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25+0.72 EUR
29+0.61 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.28 EUR
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MMSZ5246BQ-7-F MMSZ5246BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 16V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 828000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.047 EUR
6000+0.045 EUR
9000+0.032 EUR
15000+0.027 EUR
Mindestbestellmenge: 3000
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MMBT3906FA-7B MMBT3906FA-7B Diodes Incorporated MMBT3906FA.pdf Description: TRANS PNP 40V 0.2A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
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10000+0.15 EUR
20000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 10000
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MMBT3906FA-7B MMBT3906FA-7B Diodes Incorporated MMBT3906FA.pdf Description: TRANS PNP 40V 0.2A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 65561 Stücke:
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36+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
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MMBT3906FZ-7B MMBT3906FZ-7B Diodes Incorporated MMBT3906FZ.pdf Description: TRANS PNP 40V 0.2A X2-DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
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MMBT3906FZ-7B MMBT3906FZ-7B Diodes Incorporated MMBT3906FZ.pdf Description: TRANS PNP 40V 0.2A X2-DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
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MMBT3906Q-7-F MMBT3906Q-7-F Diodes Incorporated MMBT3906.pdf Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT3906Q-7-F MMBT3906Q-7-F Diodes Incorporated MMBT3906.pdf Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 888 Stücke:
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BAV21HWFQ-7 BAV21HWFQ-7 Diodes Incorporated BAV21HWFQ.pdf Description: DIODE STD 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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BAV21HWFQ-7 BAV21HWFQ-7 Diodes Incorporated BAV21HWFQ.pdf Description: DIODE STD 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
53+0.33 EUR
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100+0.19 EUR
500+0.14 EUR
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PI3USB302-AUWF Diodes Incorporated Description: WAFER USB3 SWITCH 0.18UM CMOS
Packaging: Tray
Features: Bi-Directional, USB 3.0
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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PAM8302AAYCR PAM8302AAYCR Diodes Incorporated PAM8302A.pdf Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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PAM8302AAYCR PAM8302AAYCR Diodes Incorporated PAM8302A.pdf Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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ZVN4424GQTA ZVN4424GQTA Diodes Incorporated ZVN4424G.pdf Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 590000 Stücke:
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1000+0.62 EUR
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ZVN4424GQTA ZVN4424GQTA Diodes Incorporated ZVN4424G.pdf Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 590820 Stücke:
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10+1.88 EUR
15+1.23 EUR
100+0.84 EUR
500+0.68 EUR
Mindestbestellmenge: 10
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BAV103-7 BAV103-7 Diodes Incorporated BAV101%2C102%2C103.pdf Description: DIODE STD 200V 125MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 125mA
Supplier Device Package: Mini MELF
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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DMN2041UVT-7 DMN2041UVT-7 Diodes Incorporated DMN2041UVT.pdf Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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3000+0.2 EUR
6000+0.19 EUR
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DMN2041UVT-7 DMN2041UVT-7 Diodes Incorporated DMN2041UVT.pdf Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 7468 Stücke:
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19+0.93 EUR
31+0.57 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.25 EUR
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DFLZ9V1-7 DFLZ5V1-DFLZ39.pdf
DFLZ9V1-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.18 EUR
15000+0.16 EUR
Mindestbestellmenge: 3000
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DFLZ9V1-7 DFLZ5V1-DFLZ39.pdf
DFLZ9V1-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 1W POWERDI 123
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
auf Bestellung 59456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
37+0.48 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.24 EUR
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BSS138WQ-7-F BSS138WQ.pdf
BSS138WQ-7-F
Hersteller: Diodes Incorporated
Description: BSS FAMILY SOT323 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4658 Stücke:
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Anzahl Preis
48+0.37 EUR
81+0.22 EUR
130+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
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GC0350015 GC%2CGF_Series.pdf
GC0350015
Hersteller: Diodes Incorporated
Description: CRYSTAL 3.5800MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Part Status: Active
ESR (Equivalent Series Resistance): 130 Ohms
Frequency: 3.58 MHz
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Anzahl Preis
1000+0.41 EUR
Mindestbestellmenge: 1000
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MMBT5401Q-7-F ds30057.pdf
MMBT5401Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.045 EUR
6000+0.04 EUR
9000+0.037 EUR
Mindestbestellmenge: 3000
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MMBT5401Q-7-F ds30057.pdf
MMBT5401Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 9957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
127+0.14 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
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ZXTP4003GTA ZXTP4003G.pdf
ZXTP4003GTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.45 EUR
2000+0.41 EUR
3000+0.39 EUR
5000+0.37 EUR
7000+0.35 EUR
10000+0.34 EUR
25000+0.32 EUR
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ZXTP4003GTA ZXTP4003G.pdf
ZXTP4003GTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 39959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
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BAV23CQ-13-F BAV23AQ_CQ_SQ.pdf
BAV23CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 462299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
99+0.18 EUR
110+0.16 EUR
500+0.11 EUR
1000+0.088 EUR
2000+0.086 EUR
5000+0.084 EUR
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BAV23SQ-13-F BAV23A_C_S.pdf
BAV23SQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 860000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.074 EUR
20000+0.069 EUR
Mindestbestellmenge: 10000
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BAV23SQ-13-F BAV23A_C_S.pdf
BAV23SQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR GP 200V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 860113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
86+0.21 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.097 EUR
Mindestbestellmenge: 59
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BCP5316QTA BCP5316Q.pdf
BCP5316QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4448WSFQ-7 1N4448WSF.pdf
1N4448WSFQ-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.065 EUR
6000+0.046 EUR
9000+0.04 EUR
15000+0.039 EUR
30000+0.037 EUR
75000+0.035 EUR
Mindestbestellmenge: 3000
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1N4448WSFQ-7 1N4448WSF.pdf
1N4448WSFQ-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
127+0.14 EUR
171+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
Mindestbestellmenge: 84
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DMT3003LFG-7 DMT3003LFG.pdf
DMT3003LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.48 EUR
4000+0.44 EUR
Mindestbestellmenge: 2000
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DMT3003LFG-7 DMT3003LFG.pdf
DMT3003LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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DMT3009LFVW-7 DMT3009LFVW.pdf
DMT3009LFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.38 EUR
Mindestbestellmenge: 2000
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DMT3009LFVW-7 DMT3009LFVW.pdf
DMT3009LFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 3231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.94 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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DMT3006LFV-13 DMT3006LFV.pdf
DMT3006LFV-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
6000+0.37 EUR
9000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000
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DMT3006LFV-13 DMT3006LFV.pdf
DMT3006LFV-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 35875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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DMT3006LFVQ-7 DMT3006LFVQ.pdf
DMT3006LFVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.46 EUR
4000+0.42 EUR
6000+0.4 EUR
10000+0.38 EUR
Mindestbestellmenge: 2000
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DMT3006LFVQ-7 DMT3006LFVQ.pdf
DMT3006LFVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 186532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
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AP63200QWU-7 AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf
AP63200QWU-7
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 1004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
17+1.05 EUR
25+0.94 EUR
100+0.83 EUR
250+0.78 EUR
500+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 13
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AP63201QWU-7 AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf
AP63201QWU-7
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 39361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+1.8 EUR
25+1.51 EUR
100+1.18 EUR
250+1.02 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
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AP63203QWU-7 AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf
AP63203QWU-7
Hersteller: Diodes Incorporated
Description: IC REG BUCK 3.3V 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
17+1.04 EUR
25+0.94 EUR
100+0.82 EUR
250+0.77 EUR
Mindestbestellmenge: 13
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AP1694AEV10 AP1694AEV10-User-Guide.pdf
AP1694AEV10
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 100 ~ 135 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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AP1694AEV11 AP1694AEV11UserGuide-v2.pdf
AP1694AEV11
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 200 ~ 265 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PI4IOE5V6416RQ2LEX PI4IOE5V6416RQ-Product-Brief.pdf
PI4IOE5V6416RQ2LEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.56 EUR
6000+1.53 EUR
9000+1.51 EUR
Mindestbestellmenge: 3000
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PI4IOE5V6416RQ2LEX PI4IOE5V6416RQ-Product-Brief.pdf
PI4IOE5V6416RQ2LEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 67407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.27 EUR
25+2.07 EUR
100+1.85 EUR
250+1.74 EUR
500+1.68 EUR
1000+1.62 EUR
Mindestbestellmenge: 6
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BSS84DWQ-7 BSS84DWQ.pdf
BSS84DWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4466654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.43 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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ADTC114ECAQ-7 ADTC114ECAQ.pdf
ADTC114ECAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1191000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.084 EUR
6000+0.075 EUR
9000+0.07 EUR
15000+0.065 EUR
21000+0.063 EUR
30000+0.06 EUR
75000+0.053 EUR
150000+0.049 EUR
300000+0.047 EUR
Mindestbestellmenge: 3000
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ADTC114ECAQ-7 ADTC114ECAQ.pdf
ADTC114ECAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1191000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
113+0.16 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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DDTC114EE-7-F ds30313.pdf
DDTC114EE-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTC114EE-7-F ds30313.pdf
DDTC114EE-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
63+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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ADTC114EUAQ-13 ADTC114EUAQ.pdf
ADTC114EUAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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ADTC114EUAQ-13 ADTC114EUAQ.pdf
ADTC114EUAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 22708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.062 EUR
5000+0.053 EUR
Mindestbestellmenge: 63
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DPLS160-7 ds31389.pdf
DPLS160-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DPLS160-7 ds31389.pdf
DPLS160-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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S1613A-50.0000(T)
Hersteller: Diodes Incorporated
Description: OSCILLATOR
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.071" (1.80mm)
Part Status: Last Time Buy
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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MMBT3904FZ-7B MMBT3904FZ.pdf
MMBT3904FZ-7B
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.2A X2-DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.2 EUR
20000+0.19 EUR
30000+0.18 EUR
Mindestbestellmenge: 10000
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MMBT3904FZ-7B MMBT3904FZ.pdf
MMBT3904FZ-7B
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.2A X2-DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 109803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2000+0.25 EUR
5000+0.22 EUR
Mindestbestellmenge: 17
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DMG7408SFG-7 DMG7408SFG.pdf
DMG7408SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.25 EUR
6000+0.23 EUR
10000+0.22 EUR
50000+0.2 EUR
Mindestbestellmenge: 2000
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DMG7408SFG-7 DMG7408SFG.pdf
DMG7408SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.61 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.28 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5246BQ-7-F ds18010.pdf
MMSZ5246BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 828000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.047 EUR
6000+0.045 EUR
9000+0.032 EUR
15000+0.027 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FA-7B MMBT3906FA.pdf
MMBT3906FA-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
20000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FA-7B MMBT3906FA.pdf
MMBT3906FA-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 65561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FZ-7B MMBT3906FZ.pdf
MMBT3906FZ-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X2-DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.2 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FZ-7B MMBT3906FZ.pdf
MMBT3906FZ-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X2-DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2000+0.25 EUR
5000+0.22 EUR
Mindestbestellmenge: 17
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MMBT3906Q-7-F MMBT3906.pdf
MMBT3906Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT3906Q-7-F MMBT3906.pdf
MMBT3906Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
117+0.15 EUR
189+0.093 EUR
500+0.068 EUR
Mindestbestellmenge: 72
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BAV21HWFQ-7 BAV21HWFQ.pdf
BAV21HWFQ-7
Hersteller: Diodes Incorporated
Description: DIODE STD 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAV21HWFQ-7 BAV21HWFQ.pdf
BAV21HWFQ-7
Hersteller: Diodes Incorporated
Description: DIODE STD 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 53
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PI3USB302-AUWF
Hersteller: Diodes Incorporated
Description: WAFER USB3 SWITCH 0.18UM CMOS
Packaging: Tray
Features: Bi-Directional, USB 3.0
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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PAM8302AAYCR PAM8302A.pdf
PAM8302AAYCR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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PAM8302AAYCR PAM8302A.pdf
PAM8302AAYCR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.58 EUR
34+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 22
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ZVN4424GQTA ZVN4424G.pdf
ZVN4424GQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 590000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.62 EUR
2000+0.52 EUR
3000+0.51 EUR
5000+0.49 EUR
7000+0.48 EUR
Mindestbestellmenge: 1000
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ZVN4424GQTA ZVN4424G.pdf
ZVN4424GQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 590820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.23 EUR
100+0.84 EUR
500+0.68 EUR
Mindestbestellmenge: 10
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BAV103-7 BAV101%2C102%2C103.pdf
BAV103-7
Hersteller: Diodes Incorporated
Description: DIODE STD 200V 125MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 125mA
Supplier Device Package: Mini MELF
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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DMN2041UVT-7 DMN2041UVT.pdf
DMN2041UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
Mindestbestellmenge: 3000
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DMN2041UVT-7 DMN2041UVT.pdf
DMN2041UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 7468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.57 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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