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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
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39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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KBP304G KBP304G Diodes Incorporated KBP304G-KBP310G.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMT47M2LDVQ-7 DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
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DMT47M2LDVQ-7 DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2LDV-13 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT47M2LDV-7 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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3.0SMCJ18CA-13 3.0SMCJ18CA-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 18VWM 29.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 470 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 23 V
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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6000+0.14 EUR
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75000+0.1 EUR
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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25+0.83 EUR
37+0.58 EUR
100+0.3 EUR
500+0.24 EUR
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DMP58D1LVQ-13 DMP58D1LVQ-13 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMP58D1LVQ-7 DMP58D1LVQ-7 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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SMAJ110A-13-F SMAJ110A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ110A-13 SMAJ110A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
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DMN3012LFG-13 DMN3012LFG-13 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
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DMN3012LFG-7 DMN3012LFG-7 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
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B250BE-13 B250BE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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PI3EQX1014ZTFEX PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX1014ZTFEX PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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DT955-7 DT955-7 Diodes Incorporated DT955-7.pdf Description: TRANS SOT223
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DT955-7 DT955-7 Diodes Incorporated DT955-7.pdf Description: TRANS SOT223
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223-3
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F90800018Q F90800018Q Diodes Incorporated F90800018Q_A.pdf Description: CRYSTAL 8.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 120 Ohms
Frequency: 8 MHz
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F90800013 F90800013 Diodes Incorporated FY.pdf Description: CRYSTAL 8.0000MHZ 20PF
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 150 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±30ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 20pF
Packaging: Tape & Reel (TR)
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F90800016 F90800016 Diodes Incorporated FY.pdf Description: CRYSTAL 8.0000MHZ 20PF
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 20pF
Packaging: Tape & Reel (TR)
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 100 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
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FL2500445 FL2500445 Diodes Incorporated Description: CRYSTAL 25.0000MHZ 20PF SMD
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 100°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 20pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
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DMTH8008SPSQ-13 DMTH8008SPSQ-13 Diodes Incorporated DMTH8008SPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
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DSR15U600-G DSR15U600-G Diodes Incorporated DSR15U600.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DMC1018UPDWQ-13 DMC1018UPDWQ-13 Diodes Incorporated DMC1018UPDWQ.pdf Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ-13 Diodes Incorporated DMC1018UPDWQ.pdf Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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SMF4L18CA-7 SMF4L18CA-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 18VWM 29.2VC DO219AA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 13.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Tape & Reel (TR)
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SMF4L18CA-7 SMF4L18CA-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 18VWM 29.2VC DO219AA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 13.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Cut Tape (CT)
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DMG1012T-13 DMG1012T-13 Diodes Incorporated DMG1012TQ.pdf Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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DMG1012T-13 DMG1012T-13 Diodes Incorporated DMG1012TQ.pdf Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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SMAJ22CA-13-F SMAJ22CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 22VWM 35.5VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ22CA-13-F SMAJ22CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 22VWM 35.5VC SMA
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Bidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 11.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
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B240A-13-F-2477 B240A-13-F-2477 Diodes Incorporated Description: DIODE SCHOTTKY 40V 2A SMA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
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LB4310AAPG LB4310AAPG Diodes Incorporated Description: AMP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 105°C (TA)
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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LB4310AAPGB LB4310AAPGB Diodes Incorporated Description: AMP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 105°C (TA)
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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B160-13-F-2477 B160-13-F-2477 Diodes Incorporated Description: DIODE
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Produkt ist nicht verfügbar
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DBLC15CI-7 DBLC15CI-7 Diodes Incorporated DBLC15CI.pdf Description: Dataline Protection PP SOD323 T&
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 36.8V
Voltage - Breakdown (Min): 16.7V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Ethernet, USB
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
Produkt ist nicht verfügbar
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DBLC18CI-7 DBLC18CI-7 Diodes Incorporated DBLC18CI.pdf Description: TVS DIODE 18VWM 44VC SOD323
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 18V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Ethernet, USB
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
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KBP304G KBP304G-KBP310G.pdf
KBP304G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
DMT47M2LDVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
DMT47M2LDVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
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DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2LDV-13 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT47M2LDV-7 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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3.0SMCJ18CA-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ18CA-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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800+1.52 EUR
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 470 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 23 V
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 23998 Stücke:
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28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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3000+0.29 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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10000+0.12 EUR
50000+0.1 EUR
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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25+0.83 EUR
37+0.58 EUR
100+0.3 EUR
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
9000+0.12 EUR
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
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25+0.83 EUR
37+0.58 EUR
100+0.3 EUR
500+0.24 EUR
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DMP58D1LVQ-13 DMP58D1LVQ.pdf
DMP58D1LVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP58D1LVQ-7 DMP58D1LVQ.pdf
DMP58D1LVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.12 EUR
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SMAJ110A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ110A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ110A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DMN3012LFG-13 DMN3012LFG.pdf
DMN3012LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMN3012LFG-7 DMN3012LFG.pdf
DMN3012LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 2446 Stücke:
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13+1.68 EUR
21+1.04 EUR
25+0.87 EUR
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1287000 Stücke:
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3000+0.067 EUR
6000+0.062 EUR
9000+0.054 EUR
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1289840 Stücke:
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AnzahlPrivatkunde
39+0.55 EUR
56+0.38 EUR
115+0.18 EUR
500+0.15 EUR
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B250BE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B250BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
PI3EQX1014ZTFEX
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
PI3EQX1014ZTFEX
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 2834 Stücke:
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AnzahlPrivatkunde
6+3.88 EUR
10+2.87 EUR
25+2.62 EUR
100+2.33 EUR
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500+2.13 EUR
1000+2.06 EUR
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3487 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.82 EUR
10+5.25 EUR
25+4.95 EUR
100+4.3 EUR
250+4.07 EUR
500+3.65 EUR
1000+3.08 EUR
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DT955-7 DT955-7.pdf
DT955-7
Hersteller: Diodes Incorporated
Description: TRANS SOT223
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 724000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.39 EUR
3000+0.33 EUR
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DT955-7 DT955-7.pdf
DT955-7
Hersteller: Diodes Incorporated
Description: TRANS SOT223
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223-3
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27+0.8 EUR
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F90800018Q F90800018Q_A.pdf
F90800018Q
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 120 Ohms
Frequency: 8 MHz
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F90800013 FY.pdf
F90800013
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 20PF
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 150 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±30ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 20pF
Packaging: Tape & Reel (TR)
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F90800016 FY.pdf
F90800016
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 20PF
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 20pF
Packaging: Tape & Reel (TR)
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 100 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
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FL2500445
FL2500445
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 20PF SMD
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 100°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 20pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Produkt ist nicht verfügbar
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DMTH8008SPSQ-13 DMTH8008SPSQ.pdf
DMTH8008SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
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DSR15U600-G DSR15U600.pdf
DSR15U600-G
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
DMC1018UPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
DMC1018UPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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SMF4L18CA-7 ds43394.pdf
SMF4L18CA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC DO219AA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 13.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Tape & Reel (TR)
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3000+0.17 EUR
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SMF4L18CA-7 ds43394.pdf
SMF4L18CA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC DO219AA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 13.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Cut Tape (CT)
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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40+0.52 EUR
65+0.32 EUR
79+0.26 EUR
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SMAJ22CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ22CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 35.5VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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5000+0.15 EUR
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SMAJ22CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ22CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 35.5VC SMA
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Bidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 11.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
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B240A-13-F-2477
B240A-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
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LB4310AAPG
LB4310AAPG
Hersteller: Diodes Incorporated
Description: AMP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 105°C (TA)
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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LB4310AAPGB
LB4310AAPGB
Hersteller: Diodes Incorporated
Description: AMP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 105°C (TA)
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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B160-13-F-2477
B160-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Produkt ist nicht verfügbar
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DBLC15CI-7 DBLC15CI.pdf
DBLC15CI-7
Hersteller: Diodes Incorporated
Description: Dataline Protection PP SOD323 T&
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 36.8V
Voltage - Breakdown (Min): 16.7V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Ethernet, USB
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
Produkt ist nicht verfügbar
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DBLC18CI-7 DBLC18CI.pdf
DBLC18CI-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 44VC SOD323
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 18V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Ethernet, USB
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
auf Bestellung 2895 Stücke:
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25+0.86 EUR
40+0.52 EUR
49+0.44 EUR
56+0.38 EUR
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