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DMC2710UDW-7 DMC2710UDW-7 Diodes Incorporated DMC2710UDW.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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54+0.39 EUR
100+0.25 EUR
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DMC2710UDWQ-7 DMC2710UDWQ-7 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UDWQ-7 DMC2710UDWQ-7 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UV-7 DMC2710UV-7 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMC2710UV-7 DMC2710UV-7 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMG6602SVTX-7 DMG6602SVTX-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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6000+0.18 EUR
9000+0.17 EUR
21000+0.15 EUR
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DMG6602SVTX-7 DMG6602SVTX-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39023 Stücke:
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37+0.57 EUR
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DMC3071LVT-7 DMC3071LVT-7 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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3000+0.2 EUR
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DMC3071LVT-7 DMC3071LVT-7 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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DMC3730UVT-7 DMC3730UVT-7 Diodes Incorporated DMC3730UVT.pdf Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 186000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
15000+0.15 EUR
30000+0.14 EUR
75000+0.13 EUR
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DMC3730UVT-7 DMC3730UVT-7 Diodes Incorporated DMC3730UVT.pdf Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
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DMC2991UDA-7B DMC2991UDA-7B Diodes Incorporated DMC2991UDA.pdf Description: MOSFET N/P-CH 20V 0.48A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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53+0.39 EUR
87+0.24 EUR
105+0.2 EUR
121+0.18 EUR
140+0.15 EUR
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DMC3016LDV-13 DMC3016LDV-13 Diodes Incorporated DMC3016LDV.pdf Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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3000+0.45 EUR
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DMC3016LDV-13 DMC3016LDV-13 Diodes Incorporated DMC3016LDV.pdf Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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12+1.88 EUR
18+1.18 EUR
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500+0.6 EUR
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AP7368D-30RS4-7 AP7368D-30RS4-7 Diodes Incorporated AP7368.pdf Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
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24+0.88 EUR
29+0.75 EUR
31+0.7 EUR
100+0.56 EUR
250+0.51 EUR
500+0.44 EUR
1000+0.33 EUR
2500+0.31 EUR
5000+0.29 EUR
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AP7368D-09RS4-7 AP7368D-09RS4-7 Diodes Incorporated AP7368.pdf Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 0.9V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
auf Bestellung 35000 Stücke:
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24+0.88 EUR
29+0.75 EUR
31+0.7 EUR
100+0.56 EUR
250+0.51 EUR
500+0.44 EUR
1000+0.33 EUR
2500+0.31 EUR
5000+0.29 EUR
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AP7368D-33RS4-7 AP7368D-33RS4-7 Diodes Incorporated AP7368.pdf Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
auf Bestellung 29975 Stücke:
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24+0.88 EUR
29+0.75 EUR
31+0.7 EUR
100+0.56 EUR
250+0.51 EUR
500+0.44 EUR
1000+0.33 EUR
2500+0.31 EUR
5000+0.29 EUR
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PSMUX154ZMEX Diodes Incorporated PSMUX154.pdf Description: IC SWITCH SPDT X 2 6.5OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 850MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ)
Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF
Current - Leakage (IS(off)) (Max): 2µA
Number of Circuits: 2
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9+2.53 EUR
14+1.59 EUR
25+1.34 EUR
100+1.06 EUR
250+0.92 EUR
500+0.83 EUR
1000+0.76 EUR
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APX803L05-29SA-7 APX803L05-29SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
30000+0.18 EUR
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APX803L05-29SA-7 APX803L05-29SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 41965 Stücke:
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18+1.18 EUR
30+0.7 EUR
37+0.57 EUR
100+0.43 EUR
250+0.37 EUR
500+0.32 EUR
1000+0.29 EUR
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MMBZ5245BQ-7-F MMBZ5245BQ-7-F Diodes Incorporated ds18011.pdf Description: DIODE ZENER 15V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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MMBZ5245BQ-7-F MMBZ5245BQ-7-F Diodes Incorporated ds18011.pdf Description: DIODE ZENER 15V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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SBR30A45CTB-13 SBR30A45CTB-13 Diodes Incorporated SBR30A45CTB.pdf Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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SBR30A45CTB-13 SBR30A45CTB-13 Diodes Incorporated SBR30A45CTB.pdf Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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74LVC2G07FZ4-7 74LVC2G07FZ4-7 Diodes Incorporated 74LVC2G07.pdf Description: IC BUFF 1.65V X2-DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
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74LVC2G07FZ4-7 74LVC2G07FZ4-7 Diodes Incorporated 74LVC2G07.pdf Description: IC BUFF 1.65V X2-DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
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74LVC2G07FW4-7 74LVC2G07FW4-7 Diodes Incorporated 74LVC2G07.pdf Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
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74LVC2G07FW4-7 74LVC2G07FW4-7 Diodes Incorporated 74LVC2G07.pdf Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
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B130-13-F-2477 Diodes Incorporated Description: DIODE SCHOTTKY 30V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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3.0SMCJ24CA-13 3.0SMCJ24CA-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ24A-13 3.0SMCJ24A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ24A-13 3.0SMCJ24A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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DMN3055LFDB-7 DMN3055LFDB-7 Diodes Incorporated DMN3055LFDB.pdf Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMN3055LFDB-7 DMN3055LFDB-7 Diodes Incorporated DMN3055LFDB.pdf Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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FMMT491AQTA FMMT491AQTA Diodes Incorporated FMMT491A.pdf Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
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AL1666AS-13 AL1666AS-13 Diodes Incorporated AL1666A.pdf Description: IC LED DRIVER CONTROLLER 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
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AL1666AS-13 AL1666AS-13 Diodes Incorporated AL1666A.pdf Description: IC LED DRIVER CONTROLLER 8SO
Voltage - Supply (Max): 23V
Voltage - Supply (Min): 8.5V
Dimming: Analog, PWM
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Type: DC DC Controller
Frequency: 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.4V ~ 23V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SBR8U60P5-13-2169 Diodes Incorporated Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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SBR8A45SP5-13-2169 Diodes Incorporated Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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DSC10A065D1-13 DSC10A065D1-13 Diodes Incorporated DSC10A065D1.pdf Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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DSC10A065D1-13 DSC10A065D1-13 Diodes Incorporated DSC10A065D1.pdf Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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AP7340-18FS4-7 AP7340-18FS4-7 Diodes Incorporated AP7340.pdf Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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AP7340-18FS4-7 AP7340-18FS4-7 Diodes Incorporated AP7340.pdf Description: IC REG LINEAR 1.8V 150MA 4DFN
Current - Supply (Max): 100 µA
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: X2-DFN1010-4
Number of Regulators: 1
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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BAS16Q-13-F BAS16Q-13-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16Q-13-F BAS16Q-13-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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127+0.17 EUR
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BAS16Q-7-F BAS16Q-7-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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DDZ20ASF-7 DDZ20ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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DDZ20ASF-7 DDZ20ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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DDZ20DSF-7 DDZ20DSF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
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DDZ20DSF-7 DDZ20DSF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
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DDZ20C-7-79 Diodes Incorporated Description: DIODE ZENER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF30DG-B SF30DG-B Diodes Incorporated SF30AG_-_SF30JG.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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PI3CH480ZHDEX PI3CH480ZHDEX Diodes Incorporated PI3CH480.pdf Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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PI3CH480ZHDEX PI3CH480ZHDEX Diodes Incorporated PI3CH480.pdf Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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250+0.8 EUR
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DMTH48M3SFVW-7 DMTH48M3SFVW-7 Diodes Incorporated DMTH48M3SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ-7 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ-13 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3345ZHEX PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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PI3CH3345ZHEX PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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DMC2710UDW-7 DMC2710UDW.pdf
DMC2710UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 6126 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
54+0.39 EUR
100+0.25 EUR
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DMC2710UDWQ-7 DMC2710UDWQ.pdf
DMC2710UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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3000+0.13 EUR
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DMC2710UDWQ-7 DMC2710UDWQ.pdf
DMC2710UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5562 Stücke:
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35+0.61 EUR
56+0.38 EUR
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500+0.18 EUR
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DMC2710UV-7 DMC2710UV.pdf
DMC2710UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 132000 Stücke:
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3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
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DMC2710UV-7 DMC2710UV.pdf
DMC2710UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 133971 Stücke:
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24+0.9 EUR
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DMG6602SVTX-7 DMG6602SVT.pdf
DMG6602SVTX-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
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AnzahlPrivatkunde
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
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DMG6602SVTX-7 DMG6602SVT.pdf
DMG6602SVTX-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39023 Stücke:
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23+0.92 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
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DMC3071LVT-7 DMC3071LVT.pdf
DMC3071LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
9000+0.18 EUR
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DMC3071LVT-7 DMC3071LVT.pdf
DMC3071LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 9615 Stücke:
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DMC3730UVT-7 DMC3730UVT.pdf
DMC3730UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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DMC3730UVT-7 DMC3730UVT.pdf
DMC3730UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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39+0.55 EUR
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DMC2991UDA-7B DMC2991UDA.pdf
DMC2991UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.48A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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DMC3016LDV-13 DMC3016LDV.pdf
DMC3016LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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DMC3016LDV-13 DMC3016LDV.pdf
DMC3016LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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AP7368D-30RS4-7 AP7368.pdf
AP7368D-30RS4-7
Hersteller: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
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AP7368D-09RS4-7 AP7368.pdf
AP7368D-09RS4-7
Hersteller: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 0.9V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
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24+0.88 EUR
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AP7368D-33RS4-7 AP7368.pdf
AP7368D-33RS4-7
Hersteller: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
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24+0.88 EUR
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PSMUX154ZMEX PSMUX154.pdf
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 2 6.5OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 850MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ)
Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF
Current - Leakage (IS(off)) (Max): 2µA
Number of Circuits: 2
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APX803L05-29SA-7 APX803L.pdf
APX803L05-29SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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APX803L05-29SA-7 APX803L.pdf
APX803L05-29SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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18+1.18 EUR
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MMBZ5245BQ-7-F ds18011.pdf
MMBZ5245BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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MMBZ5245BQ-7-F ds18011.pdf
MMBZ5245BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 330653 Stücke:
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SBR30A45CTB-13 SBR30A45CTB.pdf
SBR30A45CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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SBR30A45CTB-13 SBR30A45CTB.pdf
SBR30A45CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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74LVC2G07FZ4-7 74LVC2G07.pdf
74LVC2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
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74LVC2G07FZ4-7 74LVC2G07.pdf
74LVC2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
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74LVC2G07FW4-7 74LVC2G07.pdf
74LVC2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
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74LVC2G07FW4-7 74LVC2G07.pdf
74LVC2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
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56+0.38 EUR
80+0.26 EUR
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B130-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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3.0SMCJ24CA-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ24CA-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3000+0.5 EUR
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3.0SMCJ24A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ24A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3000+0.51 EUR
9000+0.45 EUR
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3.0SMCJ24A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ24A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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25+1.09 EUR
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DMN3055LFDB-7 DMN3055LFDB.pdf
DMN3055LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMN3055LFDB-7 DMN3055LFDB.pdf
DMN3055LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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FMMT491AQTA FMMT491A.pdf
FMMT491AQTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
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AL1666AS-13 AL1666A.pdf
AL1666AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CONTROLLER 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
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AL1666AS-13 AL1666A.pdf
AL1666AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CONTROLLER 8SO
Voltage - Supply (Max): 23V
Voltage - Supply (Min): 8.5V
Dimming: Analog, PWM
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Type: DC DC Controller
Frequency: 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.4V ~ 23V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SBR8U60P5-13-2169
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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SBR8A45SP5-13-2169
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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DSC10A065D1-13 DSC10A065D1.pdf
DSC10A065D1-13
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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DSC10A065D1-13 DSC10A065D1.pdf
DSC10A065D1-13
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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AP7340-18FS4-7 AP7340.pdf
AP7340-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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AP7340-18FS4-7 AP7340.pdf
AP7340-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Current - Supply (Max): 100 µA
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: X2-DFN1010-4
Number of Regulators: 1
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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21+1 EUR
34+0.63 EUR
41+0.52 EUR
100+0.39 EUR
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BAS16Q-13-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16Q-13-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 9939 Stücke:
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56+0.38 EUR
91+0.24 EUR
110+0.19 EUR
127+0.17 EUR
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BAS16Q-7-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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3000+0.075 EUR
9000+0.063 EUR
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DDZ20ASF-7 ds31987.pdf
DDZ20ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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3000+0.055 EUR
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DDZ20ASF-7 ds31987.pdf
DDZ20ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
auf Bestellung 123786 Stücke:
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125+0.17 EUR
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DDZ20DSF-7 ds31987.pdf
DDZ20DSF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
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DDZ20DSF-7 ds31987.pdf
DDZ20DSF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
auf Bestellung 135156 Stücke:
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53+0.39 EUR
75+0.29 EUR
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DDZ20C-7-79
Hersteller: Diodes Incorporated
Description: DIODE ZENER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF30DG-B SF30AG_-_SF30JG.pdf
SF30DG-B
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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PI3CH480ZHDEX PI3CH480.pdf
PI3CH480ZHDEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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3500+0.49 EUR
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PI3CH480ZHDEX PI3CH480.pdf
PI3CH480ZHDEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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17+1.27 EUR
19+1.13 EUR
25+1.06 EUR
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500+0.68 EUR
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DMTH48M3SFVW-7 DMTH48M3SFVW.pdf
DMTH48M3SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PI3CH3345ZHEX PI3CH3345.pdf
PI3CH3345ZHEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+1.88 EUR
Mindestbestellmenge: 3500 Stücke
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PI3CH3345ZHEX PI3CH3345.pdf
PI3CH3345ZHEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.36 EUR
Mindestbestellmenge: 7 Stücke
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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