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ZAMP001H6TA ZAMP001H6TA Diodes Incorporated ZAMP001.pdf Description: AMPLIFIER 18DB GAIN LNA SC70-6
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ZAMP003H6TA ZAMP003H6TA Diodes Incorporated ZAMP003.pdf Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
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ZLLS2000TA ZLLS2000TA Diodes Incorporated ZLLS2000.pdf Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZLLS1000TA ZLLS1000TA Diodes Incorporated ZLLS1000.pdf Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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ZLLS500TA ZLLS500TA Diodes Incorporated ZLLS500.pdf Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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ZXMN2A02N8TA ZXMN2A02N8TA Diodes Incorporated ZXMN2A02N8.pdf Description: MOSFET N-CH 20V 8.3A 8-SOIC
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ZXMN2A14FTA ZXMN2A14FTA Diodes Incorporated ZXMN2A14F.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
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ZXMN3A14FTA ZXMN3A14FTA Diodes Incorporated ZXMN3A14F.pdf Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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ZXM64N035GTA ZXM64N035GTA Diodes Incorporated ZXM64N035G.pdf Description: MOSFET N-CH 35V 6.7A SOT223
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ZXMP3A16GTA ZXMP3A16GTA Diodes Incorporated ZXMP3A16G.pdf Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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ZXM64P035GTA ZXM64P035GTA Diodes Incorporated ZXM64P035G.pdf Description: MOSFET P-CH 35V 3.8A SOT223
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ZXMN6A09GTA ZXMN6A09GTA Diodes Incorporated ZXMN6A09G.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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ZXMN6A11ZTA ZXMN6A11ZTA Diodes Incorporated ZXMN6A11Z.pdf Description: MOSFET N-CH 60V 2.7A SOT89-3
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated ZXMP6A18DN8.pdf Description: MOSFET 2P-CH 60V 3.7A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
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ZXMP6A17GTA ZXMP6A17GTA Diodes Incorporated ZXMP6A17G.pdf Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
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ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMP6A13GTA ZXMP6A13GTA Diodes Incorporated ZXMP6A13G.pdf Description: MOSFET P-CH 60V 1.7A SOT223
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
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ZXMP6A17E6TA ZXMP6A17E6TA Diodes Incorporated ZXMP6A17E6.pdf Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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ZXMP6A13FTA ZXMP6A13FTA Diodes Incorporated ZXMP6A13F.pdf Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
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ZXMN10B08E6TA ZXMN10B08E6TA Diodes Incorporated ZXMN10B08E6.pdf Description: MOSFET N-CH 100V 1.6A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZXM41N10FTA ZXM41N10FTA Diodes Incorporated ZXM41N10F.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
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ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated ZXMP10A18G.pdf Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
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ZXMP10A17E6TA ZXMP10A17E6TA Diodes Incorporated ZXMP10A17E6.pdf Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
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ZXMP10A13FTA ZXMP10A13FTA Diodes Incorporated ZXMP10A13F.pdf Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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ZAMP001H6TA ZAMP001H6TA Diodes Incorporated ZAMP001.pdf Description: AMPLIFIER 18DB GAIN LNA SC70-6
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ZAMP002H6TA ZAMP002H6TA Diodes Incorporated ZAMP002.pdf Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Supplier Device Package: SC-70-6
Test Frequency: 950MHz ~ 2.15GHz
P1dB: 7dbm
Noise Figure: 7dB
Current - Supply: 21mA ~ 24mA
Gain: 25dB
Voltage - Supply: 4.5V ~ 5.5V
RF Type: General Purpose
Frequency: 800MHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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22+0.96 EUR
25+0.9 EUR
100+0.84 EUR
250+0.81 EUR
500+0.79 EUR
1000+0.77 EUR
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BAT54ST-7 BAT54ST-7 Diodes Incorporated BAT54T_AT_CT_ST.pdf Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW-7 Diodes Incorporated SD103ATW.pdf Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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MMBD3004BRM-7 MMBD3004BRM-7 Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT26
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-26
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N7002T-7 2N7002T-7 Diodes Incorporated ds30301.pdf Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
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BSS8402DW-7 BSS8402DW-7 Diodes Incorporated ds30380.pdf Description: MOSFET N/P-CH 60V/50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Drain to Source Voltage (Vdss): 60V, 50V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDM10M45SD-7 SDM10M45SD-7 Diodes Incorporated ds30386.pdf Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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BAV199T-7 BAV199T-7 Diodes Incorporated BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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SBM340-13 SBM340-13 Diodes Incorporated ds30362.pdf Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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SBM540-13 SBM540-13 Diodes Incorporated ds30297.pdf Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite 3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Powermite®3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB0640H-13 TB0640H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 58V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB0640L-13 TB0640L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB0720H-13 TB0720H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 65V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 65V
Voltage - Breakover: 88V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB1100M-13 TB1100M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 90V 250A DO-214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 90V
Voltage - Breakover: 130V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB1300M-13 TB1300M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 120V 250A DO-214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 120V
Voltage - Breakover: 160V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Tape & Reel (TR)
Number of Elements: 1
Produkt ist nicht verfügbar
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TB1800L-13 TB1800L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
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TB2300L-13 TB2300L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 190V 150A DO214AA
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TB3100M-13 TB3100M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 275V 250A DO214AA
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TB3500H-13 TB3500H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR PROTECT BIDIR 100A SMB
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TB3500L-13 TB3500L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
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BAT54ST-7 BAT54ST-7 Diodes Incorporated BAT54T_AT_CT_ST.pdf Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW-7 Diodes Incorporated SD103ATW.pdf Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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2N7002T-7 2N7002T-7 Diodes Incorporated ds30301.pdf Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS8402DW-7 BSS8402DW-7 Diodes Incorporated ds30380.pdf Description: MOSFET N/P-CH 60V/50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Drain to Source Voltage (Vdss): 60V, 50V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDM10M45SD-7 SDM10M45SD-7 Diodes Incorporated ds30386.pdf Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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SBM340-13 SBM340-13 Diodes Incorporated ds30362.pdf Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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TB0640H-13 TB0640H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 58V 400A DO214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
Current - Peak Pulse (8/20µs): 400 A
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TB0640L-13 TB0640L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
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TB0720H-13 TB0720H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 65V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 65V
Voltage - Breakover: 88V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB0720M-13 TB0720M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 65V 250A DO214AA
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TB0900L-13 TB0900L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 75V 150A DO214AA
auf Bestellung 549 Stücke:
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TB1100L-13 TB1100L-13 Diodes Incorporated TB0640L%7ETB3500L.pdf Description: THYRISTOR 90V 150A DO-214AA
Qualification: AEC-Q101
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Grade: Automotive
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 90V
Voltage - Breakover: 130V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 60pF
Packaging: Cut Tape (CT)
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TB1800L-13 TB1800L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
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TB2300L-13 TB2300L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 190V 150A DO214AA
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TB2600L-13 TB2600L-13 Diodes Incorporated TB0640L%7ETB3500L.pdf Description: THYRISTOR 220V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
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ZAMP001H6TA ZAMP001.pdf
ZAMP001H6TA
Hersteller: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
Produkt ist nicht verfügbar
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ZAMP003H6TA ZAMP003.pdf
ZAMP003H6TA
Hersteller: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Produkt ist nicht verfügbar
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ZLLS2000TA ZLLS2000.pdf
ZLLS2000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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13+1.68 EUR
20+1.09 EUR
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ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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16+1.36 EUR
24+0.88 EUR
100+0.7 EUR
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ZLLS500TA ZLLS500.pdf
ZLLS500TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 1698 Stücke:
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100+0.56 EUR
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ZXMN2A02N8TA ZXMN2A02N8.pdf
ZXMN2A02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
auf Bestellung 749 Stücke:
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ZXMN2A14FTA ZXMN2A14F.pdf
ZXMN2A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
auf Bestellung 52280 Stücke:
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ZXMN3A14FTA ZXMN3A14F.pdf
ZXMN3A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 485495 Stücke:
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25+0.83 EUR
35+0.61 EUR
100+0.51 EUR
500+0.49 EUR
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ZXM64N035GTA ZXM64N035G.pdf
ZXM64N035GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
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ZXMP3A16GTA ZXMP3A16G.pdf
ZXMP3A16GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 12067 Stücke:
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11+2.02 EUR
100+1.36 EUR
500+1.07 EUR
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ZXM64P035GTA ZXM64P035G.pdf
ZXM64P035GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
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ZXMN6A09GTA ZXMN6A09G.pdf
ZXMN6A09GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 50721 Stücke:
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6+3.58 EUR
10+2.28 EUR
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ZXMN6A11ZTA ZXMN6A11Z.pdf
ZXMN6A11ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5118 Stücke:
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ZXMP6A18DN8TA ZXMP6A18DN8.pdf
ZXMP6A18DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
auf Bestellung 1765 Stücke:
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ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 664 Stücke:
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11+1.9 EUR
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ZXMP6A17DN8TA ZXMP6A17DN8.pdf
ZXMP6A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9193 Stücke:
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8+2.98 EUR
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ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 15125 Stücke:
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17+1.26 EUR
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ZXMP6A17E6TA ZXMP6A17E6.pdf
ZXMP6A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2158 Stücke:
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14+1.57 EUR
22+0.99 EUR
100+0.64 EUR
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ZXMP6A13FTA ZXMP6A13F.pdf
ZXMP6A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 16095 Stücke:
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15+1.46 EUR
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ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 12583 Stücke:
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10+2.12 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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ZXM41N10FTA ZXM41N10F.pdf
ZXM41N10FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18G.pdf
ZXMP10A18GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 2355 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
10+3.22 EUR
100+2.21 EUR
500+1.77 EUR
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ZXMP10A17E6TA ZXMP10A17E6.pdf
ZXMP10A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 24007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
17+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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ZXMP10A13FTA ZXMP10A13F.pdf
ZXMP10A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ZAMP001H6TA ZAMP001.pdf
ZAMP001H6TA
Hersteller: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
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ZAMP002H6TA ZAMP002.pdf
ZAMP002H6TA
Hersteller: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Supplier Device Package: SC-70-6
Test Frequency: 950MHz ~ 2.15GHz
P1dB: 7dbm
Noise Figure: 7dB
Current - Supply: 21mA ~ 24mA
Gain: 25dB
Voltage - Supply: 4.5V ~ 5.5V
RF Type: General Purpose
Frequency: 800MHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
22+0.96 EUR
25+0.9 EUR
100+0.84 EUR
250+0.81 EUR
500+0.79 EUR
1000+0.77 EUR
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BAT54ST-7 BAT54T_AT_CT_ST.pdf
BAT54ST-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW.pdf
SD103ATW-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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MMBD3004BRM-7
MMBD3004BRM-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT26
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-26
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N7002T-7 ds30301.pdf
2N7002T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSS8402DW-7 ds30380.pdf
BSS8402DW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Drain to Source Voltage (Vdss): 60V, 50V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDM10M45SD-7 ds30386.pdf
SDM10M45SD-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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BAV199T-7 BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf
BAV199T-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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SBM340-13 ds30362.pdf
SBM340-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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SBM540-13 ds30297.pdf
SBM540-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite 3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Powermite®3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB0640H-13 ds30360.pdf
TB0640H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB0640L-13 ds30359.pdf
TB0640L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB0720H-13 ds30360.pdf
TB0720H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 65V
Voltage - Breakover: 88V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB1100M-13 TB0640M-TB3500M.pdf
TB1100M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 250A DO-214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 90V
Voltage - Breakover: 130V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB1300M-13 TB0640M-TB3500M.pdf
TB1300M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 250A DO-214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 120V
Voltage - Breakover: 160V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Tape & Reel (TR)
Number of Elements: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB1800L-13 ds30359.pdf
TB1800L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB2300L-13 TB0640L~TB3500L.pdf
TB2300L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 150A DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB3100M-13 TB0640M-TB3500M.pdf
TB3100M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 250A DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB3500H-13 ds30360.pdf
TB3500H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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TB3500L-13 ds30359.pdf
TB3500L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BAT54ST-7 BAT54T_AT_CT_ST.pdf
BAT54ST-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW.pdf
SD103ATW-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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2N7002T-7 ds30301.pdf
2N7002T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS8402DW-7 ds30380.pdf
BSS8402DW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Drain to Source Voltage (Vdss): 60V, 50V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDM10M45SD-7 ds30386.pdf
SDM10M45SD-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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SBM340-13 ds30362.pdf
SBM340-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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TB0640H-13 ds30360.pdf
TB0640H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
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TB0640L-13 ds30359.pdf
TB0640L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB0720H-13 ds30360.pdf
TB0720H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 65V
Voltage - Breakover: 88V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB0720M-13 TB0640M-TB3500M.pdf
TB0720M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 250A DO214AA
auf Bestellung 8384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
13+1.69 EUR
100+1.32 EUR
500+1.09 EUR
1000+0.86 EUR
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TB0900L-13 TB0640L~TB3500L.pdf
TB0900L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 75V 150A DO214AA
auf Bestellung 549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
12+1.75 EUR
100+1.37 EUR
500+1.13 EUR
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TB1100L-13 TB0640L%7ETB3500L.pdf
TB1100L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 150A DO-214AA
Qualification: AEC-Q101
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Grade: Automotive
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 90V
Voltage - Breakover: 130V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 60pF
Packaging: Cut Tape (CT)
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.87 EUR
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TB1800L-13 ds30359.pdf
TB1800L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
auf Bestellung 2317 Stücke:
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TB2300L-13 TB0640L~TB3500L.pdf
TB2300L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 150A DO214AA
auf Bestellung 2612 Stücke:
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TB2600L-13 TB0640L%7ETB3500L.pdf
TB2600L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 220V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
15+1.48 EUR
100+1.15 EUR
500+0.98 EUR
Mindestbestellmenge: 12 Stücke
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