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SDMP0340LT-7 SDMP0340LT-7 Diodes Incorporated ds30266.pdf Description: DIODE SCHOTTKY 40V 30MA SOT523
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TB0640M-13 TB0640M-13 Diodes Incorporated ds30361.pdf Description: THYRISTOR PROTECT BI-DIR 50A SMB
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TB0720L-13 TB0720L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 65V 150A DO214AA
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TB0900M-13 TB0900M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 75V 250A DO-214AA
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TB1100H-13 TB1100H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR PROTECT BIDIR 100A SMB
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TB1300L-13 TB1300L-13 Diodes Incorporated TB0640L%7ETB3500L.pdf Description: THYRISTOR 120V 150A DO-214AA
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TB1800M-13 TB1800M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 160V 250A DO214AA
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TB2300H-13 TB2300H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 190V 400A DO214AA
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TB2300M-13 TB2300M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 190V 250A DO214AA
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TB3100H-13 TB3100H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 275V 400A DO214AA
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TB3100L-13 TB3100L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 275V 150A DO214AA
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2DA1774Q-7 2DA1774Q-7 Diodes Incorporated ds30253.pdf Description: TRANS PNP 50V 0.15A SOT-523
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2DA1774R-7 2DA1774R-7 Diodes Incorporated ds30253.pdf Description: TRANS PNP 50V 0.15A SOT-523
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2DA1774S-7 2DA1774S-7 Diodes Incorporated ds30253.pdf Description: TRANS PNP 50V 0.15A SOT-523
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2DC4617R-7 2DC4617R-7 Diodes Incorporated 2DC4617Q_R_S.pdf Description: TRANS NPN 50V 0.15A SOT523
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
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B130LAW-7 B130LAW-7 Diodes Incorporated Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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DDTC113TE-7 DDTC113TE-7 Diodes Incorporated DDTC_R1-ONLY_SERIES_E.pdf Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
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125+0.17 EUR
147+0.14 EUR
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DDTC114EE-7 DDTC114EE-7 Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
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DDTC114GE-7 DDTC114GE-7 Diodes Incorporated ds30316.pdf Description: TRANS PREBIAS NPN 150MW SOT523
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DDTC114YE-7 DDTC114YE-7 Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 150MW SOT523
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DDTC115GE-7 DDTC115GE-7 Diodes Incorporated ds30316.pdf Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
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DDTC124XE-7 DDTC124XE-7 Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 150MW SOT523
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DDTC125TE-7 DDTC125TE-7 Diodes Incorporated DDTC_R1-ONLY_SERIES_E.pdf Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
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44+0.49 EUR
100+0.33 EUR
500+0.25 EUR
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DDTC143XE-7 DDTC143XE-7 Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 50V SOT523
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
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DDTC144EE-7 DDTC144EE-7 Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
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MMBTA28-7 MMBTA28-7 Diodes Incorporated Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SDMP0340LT-7 SDMP0340LT-7 Diodes Incorporated ds30266.pdf Description: DIODE SCHOTTKY 40V 30MA SOT523
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TB0640M-13 TB0640M-13 Diodes Incorporated ds30361.pdf Description: THYRISTOR PROTECT BI-DIR 50A SMB
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TB0720L-13 TB0720L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 65V 150A DO214AA
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TB1100H-13 TB1100H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR PROTECT BIDIR 100A SMB
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TB1800H-13 TB1800H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 160V 400A DO214AA
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TB1800M-13 TB1800M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 160V 250A DO214AA
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TB2300M-13 TB2300M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 190V 250A DO214AA
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TB2600H-13 TB2600H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
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10+2.14 EUR
13+1.74 EUR
100+1.36 EUR
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TB3100H-13 TB3100H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 275V 400A DO214AA
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TB3100L-13 TB3100L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 275V 150A DO214AA
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PI6C9911E-2J Diodes Incorporated PI6C9911E.pdf Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ZLLS2000TA ZLLS2000TA Diodes Incorporated ZLLS2000.pdf Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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9000+0.49 EUR
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ZLLS1000TA ZLLS1000TA Diodes Incorporated ZLLS1000.pdf Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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9000+0.37 EUR
15000+0.35 EUR
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ZLLS500TA ZLLS500TA Diodes Incorporated ZLLS500.pdf Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Produkt ist nicht verfügbar
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ZXMN2A02N8TA ZXMN2A02N8TA Diodes Incorporated ZXMN2A02N8.pdf Description: MOSFET N-CH 20V 8.3A 8-SOIC
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ZXMN2A14FTA ZXMN2A14FTA Diodes Incorporated ZXMN2A14F.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
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9000+0.48 EUR
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ZXMN3A14FTA ZXMN3A14FTA Diodes Incorporated ZXMN3A14F.pdf Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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15000+0.38 EUR
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ZXM64N035GTA ZXM64N035GTA Diodes Incorporated ZXM64N035G.pdf Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
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ZXMP3A16GTA ZXMP3A16GTA Diodes Incorporated ZXMP3A16G.pdf Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 12000 Stücke:
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1000+0.98 EUR
2000+0.89 EUR
3000+0.86 EUR
5000+0.81 EUR
7000+0.79 EUR
10000+0.76 EUR
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ZXM64P035GTA ZXM64P035GTA Diodes Incorporated ZXM64P035G.pdf Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
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ZXMN6A09GTA ZXMN6A09GTA Diodes Incorporated ZXMN6A09G.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
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1000+1.12 EUR
2000+0.99 EUR
3000+0.98 EUR
5000+0.94 EUR
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ZXMN6A11ZTA ZXMN6A11ZTA Diodes Incorporated ZXMN6A11Z.pdf Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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3000+0.7 EUR
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ZXMN6A25DN8TA ZXMN6A25DN8TA Diodes Incorporated ZXMN6A25DN8.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Produkt ist nicht verfügbar
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ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated ZXMP6A18DN8.pdf Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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500+1.4 EUR
1000+1.25 EUR
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ZXMP6A17GTA ZXMP6A17GTA Diodes Incorporated ZXMP6A17G.pdf Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
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ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 8500 Stücke:
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500+0.99 EUR
1000+0.9 EUR
1500+0.86 EUR
2500+0.81 EUR
3500+0.79 EUR
5000+0.76 EUR
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ZXMP6A13GTA ZXMP6A13GTA Diodes Incorporated ZXMP6A13G.pdf Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
auf Bestellung 15000 Stücke:
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1000+0.48 EUR
2000+0.46 EUR
3000+0.45 EUR
5000+0.44 EUR
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ZXMP6A17E6TA ZXMP6A17E6TA Diodes Incorporated ZXMP6A17E6.pdf Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1900 Stücke:
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ZXMP6A13FTA ZXMP6A13FTA Diodes Incorporated ZXMP6A13F.pdf Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 15000 Stücke:
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3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
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ZXMN10B08E6TA ZXMN10B08E6TA Diodes Incorporated ZXMN10B08E6.pdf Description: MOSFET N-CH 100V 1.6A SOT26
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
auf Bestellung 12000 Stücke:
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3000+0.52 EUR
6000+0.48 EUR
9000+0.46 EUR
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ZXM41N10FTA ZXM41N10FTA Diodes Incorporated ZXM41N10F.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated ZXMP10A18G.pdf Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 2000 Stücke:
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1000+1.64 EUR
2000+1.52 EUR
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ZXMP10A17E6TA ZXMP10A17E6TA Diodes Incorporated ZXMP10A17E6.pdf Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
6000+0.48 EUR
9000+0.45 EUR
15000+0.44 EUR
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ZXMP10A13FTA ZXMP10A13FTA Diodes Incorporated ZXMP10A13F.pdf Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDMP0340LT-7 ds30266.pdf
SDMP0340LT-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 30MA SOT523
Produkt ist nicht verfügbar
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TB0640M-13 ds30361.pdf
TB0640M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Produkt ist nicht verfügbar
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TB0720L-13 TB0640L~TB3500L.pdf
TB0720L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 150A DO214AA
Produkt ist nicht verfügbar
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TB0900M-13 TB0640M-TB3500M.pdf
TB0900M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 75V 250A DO-214AA
Produkt ist nicht verfügbar
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TB1100H-13 ds30360.pdf
TB1100H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Produkt ist nicht verfügbar
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TB1300L-13 TB0640L%7ETB3500L.pdf
TB1300L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 150A DO-214AA
Produkt ist nicht verfügbar
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TB1800M-13 TB0640M-TB3500M.pdf
TB1800M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Produkt ist nicht verfügbar
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TB2300H-13 ds30360.pdf
TB2300H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 400A DO214AA
Produkt ist nicht verfügbar
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TB2300M-13 TB0640M-TB3500M.pdf
TB2300M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Produkt ist nicht verfügbar
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TB3100H-13 ds30360.pdf
TB3100H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 400A DO214AA
Produkt ist nicht verfügbar
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TB3100L-13 TB0640L~TB3500L.pdf
TB3100L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 150A DO214AA
Produkt ist nicht verfügbar
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2DA1774Q-7 ds30253.pdf
2DA1774Q-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
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2DA1774R-7 ds30253.pdf
2DA1774R-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
auf Bestellung 389 Stücke:
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2DA1774S-7 ds30253.pdf
2DA1774S-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
auf Bestellung 2617 Stücke:
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2DC4617R-7 2DC4617Q_R_S.pdf
2DC4617R-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.15A SOT523
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
Produkt ist nicht verfügbar
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B130LAW-7
B130LAW-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DDTC113TE-7 DDTC_R1-ONLY_SERIES_E.pdf
DDTC113TE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
auf Bestellung 3692 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
125+0.17 EUR
147+0.14 EUR
500+0.13 EUR
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DDTC114EE-7 ds30313.pdf
DDTC114EE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
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DDTC114GE-7 ds30316.pdf
DDTC114GE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
auf Bestellung 5812 Stücke:
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DDTC114YE-7 ds30314.pdf
DDTC114YE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Produkt ist nicht verfügbar
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DDTC115GE-7 ds30316.pdf
DDTC115GE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Produkt ist nicht verfügbar
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DDTC124XE-7 ds30314.pdf
DDTC124XE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
auf Bestellung 5579 Stücke:
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DDTC125TE-7 DDTC_R1-ONLY_SERIES_E.pdf
DDTC125TE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
auf Bestellung 2897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
44+0.49 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 30 Stücke
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DDTC143XE-7 ds30314.pdf
DDTC143XE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
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DDTC144EE-7 ds30313.pdf
DDTC144EE-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBTA28-7
MMBTA28-7
Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDMP0340LT-7 ds30266.pdf
SDMP0340LT-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 30MA SOT523
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
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TB0640M-13 ds30361.pdf
TB0640M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 50A SMB
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
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TB0720L-13 TB0640L~TB3500L.pdf
TB0720L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 150A DO214AA
auf Bestellung 5810 Stücke:
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TB1100H-13 ds30360.pdf
TB1100H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Produkt ist nicht verfügbar
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TB1800H-13 ds30360.pdf
TB1800H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 160V 400A DO214AA
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
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TB1800M-13 TB0640M-TB3500M.pdf
TB1800M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Produkt ist nicht verfügbar
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TB2300M-13 TB0640M-TB3500M.pdf
TB2300M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
auf Bestellung 1539 Stücke:
Lieferzeit 10-14 Tag (e)
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TB2600H-13 ds30360.pdf
TB2600H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
13+1.74 EUR
100+1.36 EUR
Mindestbestellmenge: 10 Stücke
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TB3100H-13 ds30360.pdf
TB3100H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 400A DO214AA
Produkt ist nicht verfügbar
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TB3100L-13 TB0640L~TB3500L.pdf
TB3100L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 150A DO214AA
Produkt ist nicht verfügbar
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PI6C9911E-2J PI6C9911E.pdf
Hersteller: Diodes Incorporated
Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ZLLS2000TA ZLLS2000.pdf
ZLLS2000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 314626 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
6000+0.52 EUR
9000+0.49 EUR
Mindestbestellmenge: 3000 Stücke
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ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 1137000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
6000+0.38 EUR
9000+0.37 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
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ZLLS500TA ZLLS500.pdf
ZLLS500TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Produkt ist nicht verfügbar
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ZXMN2A02N8TA ZXMN2A02N8.pdf
ZXMN2A02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 500 Stücke
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ZXMN2A14FTA ZXMN2A14F.pdf
ZXMN2A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
9000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
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ZXMN3A14FTA ZXMN3A14F.pdf
ZXMN3A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 483000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
15000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
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ZXM64N035GTA ZXM64N035G.pdf
ZXM64N035GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZXMP3A16GTA ZXMP3A16G.pdf
ZXMP3A16GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.98 EUR
2000+0.89 EUR
3000+0.86 EUR
5000+0.81 EUR
7000+0.79 EUR
10000+0.76 EUR
Mindestbestellmenge: 1000 Stücke
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ZXM64P035GTA ZXM64P035G.pdf
ZXM64P035GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZXMN6A09GTA ZXMN6A09G.pdf
ZXMN6A09GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.12 EUR
2000+0.99 EUR
3000+0.98 EUR
5000+0.94 EUR
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ZXMN6A11ZTA ZXMN6A11Z.pdf
ZXMN6A11ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.81 EUR
3000+0.7 EUR
Mindestbestellmenge: 1000 Stücke
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ZXMN6A25DN8TA ZXMN6A25DN8.pdf
ZXMN6A25DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Produkt ist nicht verfügbar
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ZXMP6A18DN8TA ZXMP6A18DN8.pdf
ZXMP6A18DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+1.4 EUR
1000+1.25 EUR
Mindestbestellmenge: 500 Stücke
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ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZXMP6A17DN8TA ZXMP6A17DN8.pdf
ZXMP6A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+0.99 EUR
1000+0.9 EUR
1500+0.86 EUR
2500+0.81 EUR
3500+0.79 EUR
5000+0.76 EUR
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ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.48 EUR
2000+0.46 EUR
3000+0.45 EUR
5000+0.44 EUR
Mindestbestellmenge: 1000 Stücke
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ZXMP6A17E6TA ZXMP6A17E6.pdf
ZXMP6A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1900 Stücke
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ZXMP6A13FTA ZXMP6A13F.pdf
ZXMP6A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.52 EUR
6000+0.48 EUR
9000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
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ZXM41N10FTA ZXM41N10F.pdf
ZXM41N10FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXMP10A18GTA ZXMP10A18G.pdf
ZXMP10A18GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.64 EUR
2000+1.52 EUR
Mindestbestellmenge: 1000 Stücke
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ZXMP10A17E6TA ZXMP10A17E6.pdf
ZXMP10A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.51 EUR
6000+0.48 EUR
9000+0.45 EUR
15000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
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ZXMP10A13FTA ZXMP10A13F.pdf
ZXMP10A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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