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SD103ASDM-7 SD103ASDM-7 Diodes Incorporated SD103ASDM_Rev4.2.pdf Description: DIODE ARRAY SCHOTTKY 40V SOT26
Produkt ist nicht verfügbar
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BAT54TW-7 BAT54TW-7 Diodes Incorporated BAT54TW_ADW_CDW_SDW_BRW.pdf Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAS16TW-7 BAS16TW-7 Diodes Incorporated ds30154.pdf Description: DIODE ARRAY GP 75V 150MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS21T-7 BAS21T-7 Diodes Incorporated BAS21T-7.pdf Description: DIODE GEN PURP 200V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAS116T-7 BAS116T-7 Diodes Incorporated ds30258.pdf Description: DIODE STANDARD 85V 215MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAV116W-7 BAV116W-7 Diodes Incorporated ds30291.pdf Description: DIODE STANDARD 130V 215MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 130 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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SDM40E20LS-7 SDM40E20LS-7 Diodes Incorporated SDM40E20L_S_C_A.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Produkt ist nicht verfügbar
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MBRD1040-T MBRD1040-T Diodes Incorporated MBRD1040.pdf Description: DIODE SCHOTTKY 40V 10A DPAK
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MBRD1040CT-T MBRD1040CT-T Diodes Incorporated MBRD1040CT.pdf Description: DIODE ARRAY SCHOTTKY 40V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 35 V
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CTA2N1P-7 CTA2N1P-7 Diodes Incorporated ds30295.pdf Description: TRANS ARRAY NPN/P-CH 60V SOT-363
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MMBT123S-7 MMBT123S-7 Diodes Incorporated ds30292.pdf Description: TRANS NPN 18V 1A SOT23-3
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ZLLS400TA ZLLS400TA Diodes Incorporated ZLLS400.pdf Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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59+0.3 EUR
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ZXF103EV ZXF103EV Diodes Incorporated ZXF103.pdf Description: EVAL BOARD FOR ZXF103
Packaging: Bulk
Function: Active - Band Pass
Type: Filter
Contents: Board(s)
Utilized IC / Part: ZXF103
Primary Attributes: Up to 600kHz, 2 Resistor and 2 Capacitor to Set Center Frequency
Embedded: No
Produkt ist nicht verfügbar
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MMBZ5V6AL-7 MMBZ5V6AL-7 Diodes Incorporated Description: TVS DIODE 3VWM 8VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ9V1AL-7 MMBZ9V1AL-7 Diodes Incorporated Description: TVS DIODE 6VWM 14VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ10VAL-7 MMBZ10VAL-7 Diodes Incorporated Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ15VAL-7 MMBZ15VAL-7 Diodes Incorporated Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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MMBZ27VAL-7 MMBZ27VAL-7 Diodes Incorporated Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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MMBZ33VAL-7 MMBZ33VAL-7 Diodes Incorporated Ds30306.pdf Description: TVS DIODE 26V 46V SOT23-3
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MMBZ15VDL-7 MMBZ15VDL-7 Diodes Incorporated Description: TVS DIODE 12.8VWM 21.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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MMBZ27VCL-7 MMBZ27VCL-7 Diodes Incorporated MMBZ27VCL.pdf Description: TVS DIODE 22VWM 38VC SOT23-3
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MMBD3004S-7 MMBD3004S-7 Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MBRM5100-13 MBRM5100-13 Diodes Incorporated MBRM5100-13.pdf Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: Powermite®3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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DDTA114ECA-7 DDTA114ECA-7 Diodes Incorporated ds30333.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTA143ECA-7 DDTA143ECA-7 Diodes Incorporated ds30333.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DDTC114ECA-7 DDTC114ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC115ECA-7 DDTC115ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DDTC123ECA-7 DDTC123ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC124ECA-7 DDTC124ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DDTC143ECA-7 DDTC143ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMBZ27VAL-7 MMBZ27VAL-7 Diodes Incorporated Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ33VAL-7 MMBZ33VAL-7 Diodes Incorporated Ds30306.pdf Description: TVS DIODE 26V 46V SOT23-3
Produkt ist nicht verfügbar
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MMBZ27VCL-7 MMBZ27VCL-7 Diodes Incorporated MMBZ27VCL.pdf Description: TVS DIODE 22VWM 38VC SOT23-3
Produkt ist nicht verfügbar
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MMBD3004S-7 MMBD3004S-7 Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MBRM360-13 MBRM360-13 Diodes Incorporated ds30355.pdf Description: DIODE SCHOTTKY 60V 3A POWERMITE3
Packaging: Cut Tape (CT)
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
12+1.48 EUR
100+1.03 EUR
500+0.83 EUR
Mindestbestellmenge: 8
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DDTA114ECA-7 DDTA114ECA-7 Diodes Incorporated ds30333.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTA143ECA-7 DDTA143ECA-7 Diodes Incorporated ds30333.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DDTC114ECA-7 DDTC114ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC115ECA-7 DDTC115ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DDTC123ECA-7 DDTC123ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC124ECA-7 DDTC124ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DDTC143ECA-7 DDTC143ECA-7 Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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ZLLS400TA ZLLS400TA Diodes Incorporated ZLLS400.pdf Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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ZXCW6100S28 ZXCW6100S28 Diodes Incorporated ZXCW6100S28.pdf Description: IC AMP CLASS D STEREO 1W 28SSOP
Packaging: Tape & Reel (TR)
Features: Digital Inputs, I2S, Mute, PWM, Short-Circuit and Thermal Protection, SPI, Tone and Volume Control
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Max Output Power x Channels @ Load: 1W x 2 @ 4Ohm
Supplier Device Package: 28-SSOP
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ZXCW8100S28TC ZXCW8100S28TC Diodes Incorporated ZXCW8100S28.pdf Description: IC AMP CLASS D STEREO 1W 28SSOP
Packaging: Tape & Reel (TR)
Features: Digital Inputs, I2S, Mute, PWM, Short-Circuit and Thermal Protection, SPI, Tone and Volume Control
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Max Output Power x Channels @ Load: 1W x 2 @ 4Ohm
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZXCW502CEVAL Diodes Incorporated Description: BOARD EVAL DIGITAL AMP 2-CH 50W
Produkt ist nicht verfügbar
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ZXMN4A06GTA ZXMN4A06GTA Diodes Incorporated ZXMN4A06G.pdf Description: MOSFET N-CH 40V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
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ZXMP3A16N8TA ZXMP3A16N8TA Diodes Incorporated ZXMP3A16N8.pdf Description: MOSFET P-CH 30V 5.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMP3A16DN8TA ZXMP3A16DN8TA Diodes Incorporated ZXMP3A16DN8.pdf Description: MOSFET 2P-CH 30V 4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
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ZXMP3A17E6TA ZXMP3A17E6TA Diodes Incorporated ZXMP3A17E6.pdf Description: MOSFET P-CH 30V 3.2A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
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ZXMP3A13FTA ZXMP3A13FTA Diodes Incorporated ZXMP3A13F.pdf Description: MOSFET P-CH 30V 1.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.4A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 15 V
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ZXMP4A16GTA ZXMP4A16GTA Diodes Incorporated ZXMP4A16G.pdf Description: MOSFET P-CH 40V 6.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
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ZXMN4A06GTA ZXMN4A06GTA Diodes Incorporated ZXMN4A06G.pdf Description: MOSFET N-CH 40V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
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ZXMP3A16N8TA ZXMP3A16N8TA Diodes Incorporated ZXMP3A16N8.pdf Description: MOSFET P-CH 30V 5.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
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ZXMP3A16DN8TA ZXMP3A16DN8TA Diodes Incorporated ZXMP3A16DN8.pdf Description: MOSFET 2P-CH 30V 4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
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ZXMP3A17E6TA ZXMP3A17E6TA Diodes Incorporated ZXMP3A17E6.pdf Description: MOSFET P-CH 30V 3.2A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
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ZXMP3A13FTA ZXMP3A13FTA Diodes Incorporated ZXMP3A13F.pdf Description: MOSFET P-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.4A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 15 V
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ZXMP4A16GTA ZXMP4A16GTA Diodes Incorporated ZXMP4A16G.pdf Description: MOSFET P-CH 40V 6.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
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ZDC833ATC ZDC833ATC Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP DUAL 33PF SOT23-3
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ZDC834ATC ZDC834ATC Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP DUAL 47PF SOT23-3
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SD103ASDM-7 SD103ASDM_Rev4.2.pdf
SD103ASDM-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 40V SOT26
Produkt ist nicht verfügbar
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BAT54TW-7 BAT54TW_ADW_CDW_SDW_BRW.pdf
BAT54TW-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAS16TW-7 ds30154.pdf
BAS16TW-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 150MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS21T-7 BAS21T-7.pdf
BAS21T-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAS116T-7 ds30258.pdf
BAS116T-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BAV116W-7 ds30291.pdf
BAV116W-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 130V 215MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 130 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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SDM40E20LS-7 SDM40E20L_S_C_A.pdf
SDM40E20LS-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Produkt ist nicht verfügbar
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MBRD1040-T MBRD1040.pdf
MBRD1040-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 10A DPAK
Produkt ist nicht verfügbar
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MBRD1040CT-T MBRD1040CT.pdf
MBRD1040CT-T
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 40V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 35 V
Produkt ist nicht verfügbar
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CTA2N1P-7 ds30295.pdf
CTA2N1P-7
Hersteller: Diodes Incorporated
Description: TRANS ARRAY NPN/P-CH 60V SOT-363
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
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MMBT123S-7 ds30292.pdf
MMBT123S-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 18V 1A SOT23-3
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
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ZLLS400TA ZLLS400.pdf
ZLLS400TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 25019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
59+0.3 EUR
100+0.28 EUR
Mindestbestellmenge: 22
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ZXF103EV ZXF103.pdf
ZXF103EV
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR ZXF103
Packaging: Bulk
Function: Active - Band Pass
Type: Filter
Contents: Board(s)
Utilized IC / Part: ZXF103
Primary Attributes: Up to 600kHz, 2 Resistor and 2 Capacitor to Set Center Frequency
Embedded: No
Produkt ist nicht verfügbar
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MMBZ5V6AL-7
MMBZ5V6AL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3VWM 8VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ9V1AL-7
MMBZ9V1AL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 6VWM 14VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ10VAL-7
MMBZ10VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ15VAL-7
MMBZ15VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ27VAL-7
MMBZ27VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ33VAL-7 Ds30306.pdf
MMBZ33VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 26V 46V SOT23-3
Produkt ist nicht verfügbar
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MMBZ15VDL-7
MMBZ15VDL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12.8VWM 21.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ27VCL-7 MMBZ27VCL.pdf
MMBZ27VCL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 38VC SOT23-3
Produkt ist nicht verfügbar
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MMBD3004S-7
MMBD3004S-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MBRM5100-13 MBRM5100-13.pdf
MBRM5100-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: Powermite®3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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DDTA114ECA-7 ds30333.pdf
DDTA114ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTA143ECA-7 ds30333.pdf
DDTA143ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DDTC114ECA-7 ds30329.pdf
DDTC114ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC115ECA-7 ds30329.pdf
DDTC115ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DDTC123ECA-7 ds30329.pdf
DDTC123ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC124ECA-7 ds30329.pdf
DDTC124ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DDTC143ECA-7 ds30329.pdf
DDTC143ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMBZ27VAL-7
MMBZ27VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMBZ33VAL-7 Ds30306.pdf
MMBZ33VAL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 26V 46V SOT23-3
Produkt ist nicht verfügbar
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MMBZ27VCL-7 MMBZ27VCL.pdf
MMBZ27VCL-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 38VC SOT23-3
Produkt ist nicht verfügbar
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MMBD3004S-7
MMBD3004S-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MBRM360-13 ds30355.pdf
MBRM360-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERMITE3
Packaging: Cut Tape (CT)
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
12+1.48 EUR
100+1.03 EUR
500+0.83 EUR
Mindestbestellmenge: 8
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DDTA114ECA-7 ds30333.pdf
DDTA114ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DDTA143ECA-7 ds30333.pdf
DDTA143ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DDTC114ECA-7 ds30329.pdf
DDTC114ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC115ECA-7 ds30329.pdf
DDTC115ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DDTC123ECA-7 ds30329.pdf
DDTC123ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC124ECA-7 ds30329.pdf
DDTC124ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DDTC143ECA-7 ds30329.pdf
DDTC143ECA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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ZLLS400TA ZLLS400.pdf
ZLLS400TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
9000+0.2 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000
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ZXCW6100S28 ZXCW6100S28.pdf
ZXCW6100S28
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 28SSOP
Packaging: Tape & Reel (TR)
Features: Digital Inputs, I2S, Mute, PWM, Short-Circuit and Thermal Protection, SPI, Tone and Volume Control
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Max Output Power x Channels @ Load: 1W x 2 @ 4Ohm
Supplier Device Package: 28-SSOP
Produkt ist nicht verfügbar
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ZXCW8100S28TC ZXCW8100S28.pdf
ZXCW8100S28TC
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 28SSOP
Packaging: Tape & Reel (TR)
Features: Digital Inputs, I2S, Mute, PWM, Short-Circuit and Thermal Protection, SPI, Tone and Volume Control
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Max Output Power x Channels @ Load: 1W x 2 @ 4Ohm
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZXCW502CEVAL
Hersteller: Diodes Incorporated
Description: BOARD EVAL DIGITAL AMP 2-CH 50W
Produkt ist nicht verfügbar
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ZXMN4A06GTA ZXMN4A06G.pdf
ZXMN4A06GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.59 EUR
2000+0.54 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP3A16N8TA ZXMP3A16N8.pdf
ZXMP3A16N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMP3A16DN8TA ZXMP3A16DN8.pdf
ZXMP3A16DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.15 EUR
1000+1.05 EUR
1500+1 EUR
2500+0.95 EUR
3500+0.92 EUR
5000+0.91 EUR
Mindestbestellmenge: 500
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ZXMP3A17E6TA ZXMP3A17E6.pdf
ZXMP3A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.2A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
auf Bestellung 168000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
6000+0.41 EUR
9000+0.39 EUR
Mindestbestellmenge: 3000
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ZXMP3A13FTA ZXMP3A13F.pdf
ZXMP3A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 1.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.4A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
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ZXMP4A16GTA ZXMP4A16G.pdf
ZXMP4A16GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
auf Bestellung 8810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.57 EUR
2000+0.52 EUR
3000+0.5 EUR
5000+0.47 EUR
7000+0.45 EUR
Mindestbestellmenge: 1000
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ZXMN4A06GTA ZXMN4A06G.pdf
ZXMN4A06GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
auf Bestellung 3575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
Mindestbestellmenge: 9
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ZXMP3A16N8TA ZXMP3A16N8.pdf
ZXMP3A16N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.51 EUR
100+1 EUR
Mindestbestellmenge: 8
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ZXMP3A16DN8TA ZXMP3A16DN8.pdf
ZXMP3A16DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 6058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.13 EUR
100+1.44 EUR
Mindestbestellmenge: 6
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ZXMP3A17E6TA ZXMP3A17E6.pdf
ZXMP3A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.2A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
auf Bestellung 168597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 11
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ZXMP3A13FTA ZXMP3A13F.pdf
ZXMP3A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.4A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 15 V
auf Bestellung 4440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
29+0.62 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP4A16GTA ZXMP4A16G.pdf
ZXMP4A16GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
auf Bestellung 8814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
15+1.25 EUR
100+0.83 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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ZDC833ATC 830%20Series.pdf
ZDC833ATC
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP DUAL 33PF SOT23-3
Produkt ist nicht verfügbar
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ZDC834ATC 830%20Series.pdf
ZDC834ATC
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP DUAL 47PF SOT23-3
Produkt ist nicht verfügbar
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