DDTC115ECA-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details DDTC115ECA-7 Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistor - Emitter Base (R2): 100 kOhms, Resistor - Base (R1): 100 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DDTC115ECA-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
|
DDTC115ECA-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DDTC115ECA-7 | Diodes Incorporated |
Digital Transistors PRE-BIAS NPN 200mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DDTC115ECA-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC115ECA-7 |
|
Hersteller: Diodes Incorporated
Digital Transistors PRE-BIAS NPN 200mW
Digital Transistors PRE-BIAS NPN 200mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH