ZXMP3A16DN8TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.2A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 500+ | 1.15 EUR |
| 1000+ | 1.05 EUR |
| 1500+ | 1 EUR |
| 2500+ | 0.95 EUR |
| 3500+ | 0.92 EUR |
| 5000+ | 0.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMP3A16DN8TA Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.2A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMP3A16DN8TA nach Preis ab 0.94 EUR bis 3.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZXMP3A16DN8TA | Hersteller : Diodes Incorporated |
MOSFETs Dl 30V P-Chnl UMOS |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
ZXMP3A16DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 30V 4.2A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6058 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| ZXMP3A16DN8TA | Hersteller : DIODES/ZETEX |
Trans MOSFET P-CH 30V 5.5A ZXMP3A16DN8 DIODES TZXMP3a16dn8Anzahl je Verpackung: 10 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| ZXMP3A16DN8TA | Hersteller : Zetex |
Trans MOSFET P-CH 30V 5.5A ZXMP3A16DN8 DIODES TZXMP3a16dn8Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
|
