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ZXFBF08W20TC ZXFBF08W20TC Diodes Incorporated ZXFBF08.pdf Description: IC OPAMP BUFFER 100MHZ 20SOIC
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ZXCD1000EQ16TA ZXCD1000EQ16TA Diodes Incorporated ZXCD1000.pdf Description: IC AMP CLASS D STEREO 1W 16QSOP
Supplier Device Package: 16-QSOP-EP
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Voltage - Supply: 12V ~ 18V
Operating Temperature: -40°C ~ 70°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
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ZXSC300E5TA ZXSC300E5TA Diodes Incorporated ZXSC300.pdf Description: IC LED DRIVER CTRLR SOT23-5
Part Status: Active
Voltage - Supply (Max): 8V
Voltage - Supply (Min): 0.8V
Supplier Device Package: SOT-23-5
Topology: Step-Up (Boost)
Internal Switch(s): No
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Controller
Frequency: 200kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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ZXCT1009FTA ZXCT1009FTA Diodes Incorporated ZXCT1009.pdf Description: IC CURRENT MONITOR 1% SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Current - Output: 9.98mA
Voltage - Input: 2.5V ~ 20V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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ZXM66P02N8TA ZXM66P02N8TA Diodes Incorporated ZXM66P02N8.pdf Description: MOSFET P-CH 20V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMD65P02N8TA ZXMD65P02N8TA Diodes Incorporated ZXMD65P02N8.pdf Description: MOSFET 2P-CH 20V 4A 8-SOIC
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ZXM66P03N8TA ZXM66P03N8TA Diodes Incorporated ZXM66P03N8.pdf Description: MOSFET P-CH 30V 6.25A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMD65P03N8TA ZXMD65P03N8TA Diodes Incorporated zxmd65p03n8.pdf Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
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FMMT620TA FMMT620TA Diodes Incorporated FMMT620.pdf Description: TRANS NPN 80V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FCX658ATA FCX658ATA Diodes Incorporated FCX658A.pdf Description: TRANS NPN 400V 0.5A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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ZVN4525GTA ZVN4525GTA Diodes Incorporated ZVN4525G.pdf Description: MOSFET N-CH 250V 310MA SOT223
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2W (Ta)
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ZVN4525ZTA ZVN4525ZTA Diodes Incorporated ZVN4525Z.pdf Description: MOSFET N-CH 250V 240MA SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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ZVN4525E6TA ZVN4525E6TA Diodes Incorporated ZVN4525E6.pdf Description: MOSFET N-CH 250V 230MA SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZVP4525GTA ZVP4525GTA Diodes Incorporated ZVP4525G.pdf Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
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ZVP4525ZTA ZVP4525ZTA Diodes Incorporated ZVP4525Z.pdf Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
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ZXMN2A04DN8TA ZXMN2A04DN8TA Diodes Incorporated ZXMN2A04DN8.pdf Description: MOSFET 2N-CH 20V 5.9A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN2A02X8TA ZXMN2A02X8TA Diodes Incorporated ZXMN2A02X8.pdf Description: MOSFET N-CH 20V 6.2A 8-MSOP
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ZXMN2A03E6TA ZXMN2A03E6TA Diodes Incorporated ZXMN2A03E6.pdf Description: MOSFET N-CH 20V 3.7A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZXMN2A01FTA ZXMN2A01FTA Diodes Incorporated ZXMN2A01F.pdf Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
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ZXMN3B04N8TA ZXMN3B04N8TA Diodes Incorporated ZXMN3B04N8.pdf Description: MOSFET N-CH 30V 7.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN3A04DN8TA ZXMN3A04DN8TA Diodes Incorporated ZXMN3A04DN8.pdf Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN3A06DN8TA ZXMN3A06DN8TA Diodes Incorporated ZXMN3A06DN8.pdf Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN3A03E6TA ZXMN3A03E6TA Diodes Incorporated ZXMN3A03E6.pdf Description: MOSFET N-CH 30V 3.7A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZXMN3A01FTA ZXMN3A01FTA Diodes Incorporated ZXMN3A01F.pdf Description: MOSFET N-CH 30V 1.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
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ZXMN6A09DN8TA ZXMN6A09DN8TA Diodes Incorporated ZXMN6A09DN8.pdf Description: MOSFET 2N-CH 60V 4.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
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ZXMN6A08E6TA ZXMN6A08E6TA Diodes Incorporated ZXMN6A08E6.pdf Description: MOSFET N-CH 60V 2.8A SOT26
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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ZXMN6A11DN8TA ZXMN6A11DN8TA Diodes Incorporated ZXMN6A11DN8.pdf Description: MOSFET 2N-CH 60V 2.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN6A11GTA ZXMN6A11GTA Diodes Incorporated ZXMN6A11G.pdf Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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ZXMN6A07ZTA ZXMN6A07ZTA Diodes Incorporated ZXMN6A07Z.pdf Description: MOSFET N-CH 60V 1.9A SOT89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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ZXMN6A07FTA ZXMN6A07FTA Diodes Incorporated ZXMN6A07F.pdf Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
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ZXMN10A08E6TA ZXMN10A08E6TA Diodes Incorporated ZXMN10A08E6.pdf Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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ZXMN10A11GTA ZXMN10A11GTA Diodes Incorporated ZXMN10A11G.pdf Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
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ZXMN10A07ZTA ZXMN10A07ZTA Diodes Incorporated ZXMN10A07Z.pdf Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
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ZXMN10A07FTA ZXMN10A07FTA Diodes Incorporated ZXMN10A07F.pdf Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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ZHCS2000TA ZHCS2000TA Diodes Incorporated ZHCS2000.pdf Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-26
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
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ZXTD4591E6TA ZXTD4591E6TA Diodes Incorporated ZXTD4591E6.pdf Description: TRANS NPN/PNP 60V 1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZXTS1000E6TA ZXTS1000E6TA Diodes Incorporated ZXTS1000E6.pdf Description: TRANS PNP 12V 1.25A SOT23-6
Packaging: Cut Tape (CT)
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ZXTD09N50DE6TA ZXTD09N50DE6TA Diodes Incorporated ZXTD09N50DE6.pdf Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
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SMAJ60A-13 SMAJ60A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 60VWM 96.8VC SMA
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 4.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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BZT52C10-7 BZT52C10-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 10V 500MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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BZT52C11-7 BZT52C11-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C12-7 BZT52C12-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C13-7 BZT52C13-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52C15-7 BZT52C15-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 15V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C16-7 BZT52C16-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 16V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11.2 V
Produkt ist nicht verfügbar
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BZT52C18-7 BZT52C18-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 18V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C20-7 BZT52C20-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C22-7 BZT52C22-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 22V 500MW SOD123
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C24-7 BZT52C24-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 24V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C27-7 BZT52C27-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 27V 500MW SOD123
Produkt ist nicht verfügbar
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BZT52C2V4-7 BZT52C2V4-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 2.4V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±8%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C2V7-7 BZT52C2V7-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 2.7V 500MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
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BZT52C30-7 BZT52C30-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 30V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
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BZT52C33-7 BZT52C33-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 33V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C36-7 BZT52C36-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 36V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
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BZT52C39-7 BZT52C39-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 39V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
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BZT52C3V0-7 BZT52C3V0-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3V 500MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
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BZT52C3V3-7 BZT52C3V3-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZT52C3V6-7 BZT52C3V6-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZT52C3V9-7 BZT52C3V9-7 Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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ZXFBF08W20TC ZXFBF08.pdf
ZXFBF08W20TC
Hersteller: Diodes Incorporated
Description: IC OPAMP BUFFER 100MHZ 20SOIC
Produkt ist nicht verfügbar
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ZXCD1000EQ16TA ZXCD1000.pdf
ZXCD1000EQ16TA
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 16QSOP
Supplier Device Package: 16-QSOP-EP
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Voltage - Supply: 12V ~ 18V
Operating Temperature: -40°C ~ 70°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ZXSC300E5TA ZXSC300.pdf
ZXSC300E5TA
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CTRLR SOT23-5
Part Status: Active
Voltage - Supply (Max): 8V
Voltage - Supply (Min): 0.8V
Supplier Device Package: SOT-23-5
Topology: Step-Up (Boost)
Internal Switch(s): No
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Controller
Frequency: 200kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 32652 Stücke:
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AnzahlPreis
14+1.28 EUR
20+0.92 EUR
25+0.83 EUR
100+0.73 EUR
250+0.68 EUR
500+0.65 EUR
1000+0.62 EUR
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ZXCT1009FTA ZXCT1009.pdf
ZXCT1009FTA
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Current - Output: 9.98mA
Voltage - Input: 2.5V ~ 20V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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ZXM66P02N8TA ZXM66P02N8.pdf
ZXM66P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ZXMD65P02N8TA ZXMD65P02N8.pdf
ZXMD65P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Produkt ist nicht verfügbar
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ZXM66P03N8TA ZXM66P03N8.pdf
ZXM66P03N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 6.25A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ZXMD65P03N8TA zxmd65p03n8.pdf
ZXMD65P03N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
Produkt ist nicht verfügbar
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FMMT620TA FMMT620.pdf
FMMT620TA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 41744 Stücke:
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AnzahlPreis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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FCX658ATA FCX658A.pdf
FCX658ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 46145 Stücke:
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AnzahlPreis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
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ZVN4525GTA ZVN4525G.pdf
ZVN4525GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 310MA SOT223
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 369818 Stücke:
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9+2.04 EUR
14+1.28 EUR
100+0.85 EUR
500+0.66 EUR
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ZVN4525ZTA ZVN4525Z.pdf
ZVN4525ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 240MA SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 14327 Stücke:
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9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
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ZVN4525E6TA ZVN4525E6.pdf
ZVN4525E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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ZVP4525GTA ZVP4525G.pdf
ZVP4525GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 15182 Stücke:
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10+1.95 EUR
15+1.23 EUR
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500+0.63 EUR
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ZVP4525ZTA ZVP4525Z.pdf
ZVP4525ZTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 117 Stücke:
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7+2.55 EUR
11+1.61 EUR
100+1.08 EUR
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ZXMN2A04DN8TA ZXMN2A04DN8.pdf
ZXMN2A04DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 12579 Stücke:
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6+3.2 EUR
10+2.65 EUR
100+2.11 EUR
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ZXMN2A02X8TA ZXMN2A02X8.pdf
ZXMN2A02X8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
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ZXMN2A03E6TA ZXMN2A03E6.pdf
ZXMN2A03E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 18409 Stücke:
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AnzahlPreis
13+1.37 EUR
15+1.18 EUR
100+0.81 EUR
500+0.68 EUR
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ZXMN2A01FTA ZXMN2A01F.pdf
ZXMN2A01FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
auf Bestellung 27277 Stücke:
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AnzahlPreis
18+1 EUR
29+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
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ZXMN3B04N8TA ZXMN3B04N8.pdf
ZXMN3B04N8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2697 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.87 EUR
12+1.53 EUR
100+1.19 EUR
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ZXMN3A04DN8TA ZXMN3A04DN8.pdf
ZXMN3A04DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 23886 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.84 EUR
10+2.42 EUR
100+1.63 EUR
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ZXMN3A06DN8TA ZXMN3A06DN8.pdf
ZXMN3A06DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.01 EUR
10+1.8 EUR
100+1.4 EUR
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ZXMN3A03E6TA ZXMN3A03E6.pdf
ZXMN3A03E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 37420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.83 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
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ZXMN3A01FTA ZXMN3A01F.pdf
ZXMN3A01FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
auf Bestellung 508393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
21+0.86 EUR
28+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
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ZXMN6A09DN8TA ZXMN6A09DN8.pdf
ZXMN6A09DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.08 EUR
10+2.64 EUR
100+1.81 EUR
Mindestbestellmenge: 5 Stücke
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ZXMN6A08E6TA ZXMN6A08E6.pdf
ZXMN6A08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1277 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.92 EUR
15+1.2 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
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ZXMN6A11DN8TA ZXMN6A11DN8.pdf
ZXMN6A11DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.16 EUR
13+1.36 EUR
100+0.9 EUR
Mindestbestellmenge: 9 Stücke
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ZXMN6A11GTA ZXMN6A11G.pdf
ZXMN6A11GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 325393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
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ZXMN6A07ZTA ZXMN6A07Z.pdf
ZXMN6A07ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.9A SOT89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 9425 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.11 EUR
23+0.8 EUR
100+0.56 EUR
500+0.45 EUR
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ZXMN6A07FTA ZXMN6A07F.pdf
ZXMN6A07FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
auf Bestellung 13504 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.33 EUR
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ZXMN10A08E6TA ZXMN10A08E6.pdf
ZXMN10A08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.81 EUR
16+1.13 EUR
100+0.74 EUR
Mindestbestellmenge: 10 Stücke
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ZXMN10A11GTA ZXMN10A11G.pdf
ZXMN10A11GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
auf Bestellung 90619 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
Mindestbestellmenge: 11 Stücke
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ZXMN10A07ZTA ZXMN10A07Z.pdf
ZXMN10A07ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
auf Bestellung 5887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
Mindestbestellmenge: 14 Stücke
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ZXMN10A07FTA ZXMN10A07F.pdf
ZXMN10A07FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13 Stücke
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ZHCS2000TA ZHCS2000.pdf
ZHCS2000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-26
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
auf Bestellung 1221328 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.74 EUR
28+0.64 EUR
100+0.54 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 24 Stücke
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ZXTD4591E6TA ZXTD4591E6.pdf
ZXTD4591E6TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V 1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 16570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.62 EUR
18+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11 Stücke
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ZXTS1000E6TA ZXTS1000E6.pdf
ZXTS1000E6TA
Hersteller: Diodes Incorporated
Description: TRANS PNP 12V 1.25A SOT23-6
Packaging: Cut Tape (CT)
auf Bestellung 1738 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
51+0.35 EUR
100+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 42 Stücke
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ZXTD09N50DE6TA ZXTD09N50DE6.pdf
ZXTD09N50DE6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 10026 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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SMAJ60A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ60A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 60VWM 96.8VC SMA
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 4.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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BZT52C10-7 ds18004.pdf
BZT52C10-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 500MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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BZT52C11-7 ds18004.pdf
BZT52C11-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C12-7 ds18004.pdf
BZT52C12-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52C13-7 ds18004.pdf
BZT52C13-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52C15-7 ds18004.pdf
BZT52C15-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C16-7 ds18004.pdf
BZT52C16-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11.2 V
Produkt ist nicht verfügbar
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BZT52C18-7 ds18004.pdf
BZT52C18-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C20-7 ds18004.pdf
BZT52C20-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C22-7 ds18004.pdf
BZT52C22-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 500MW SOD123
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C24-7 ds18004.pdf
BZT52C24-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C27-7 ds18004.pdf
BZT52C27-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 500MW SOD123
Produkt ist nicht verfügbar
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BZT52C2V4-7 ds18004.pdf
BZT52C2V4-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±8%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C2V7-7 ds18004.pdf
BZT52C2V7-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 500MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BZT52C30-7 ds18004.pdf
BZT52C30-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C33-7 ds18004.pdf
BZT52C33-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C36-7 ds18004.pdf
BZT52C36-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C39-7 ds18004.pdf
BZT52C39-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C3V0-7 ds18004.pdf
BZT52C3V0-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 500MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C3V3-7 ds18004.pdf
BZT52C3V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C3V6-7 ds18004.pdf
BZT52C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C3V9-7 ds18004.pdf
BZT52C3V9-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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