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ZMM5258B-7 ZMM5258B-7 Diodes Incorporated ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 36V 500MW MINIMELF
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ZMM5259B-7 ZMM5259B-7 Diodes Incorporated ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 39V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
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ZMM5260B-7 ZMM5260B-7 Diodes Incorporated ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 43V 500MW MINIMELF
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ZMM5265B-7 ZMM5265B-7 Diodes Incorporated ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 62V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: Mini MELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
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ZMM5266B-7 ZMM5266B-7 Diodes Incorporated ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 68V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
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ZRT025N8A1TA ZRT025N8A1TA Diodes Incorporated ZRT025issue1.pdf Description: IC VREF SHUNT 1% 8SOP
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-SO
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Cathode: 150 µA
Current - Output: 75 mA
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PI74ALVTC16240A PI74ALVTC16240A Diodes Incorporated PI74ALVTC16240.pdf Description: IC BUFFER INVERT 3.6V 48TSSOP
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ZVN4206AVSTOA ZVN4206AVSTOA Diodes Incorporated ZVN4206AV.pdf Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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ZXFV201N14TA ZXFV201N14TA Diodes Incorporated zxfv201.pdf Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
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ZXFV202E5TA ZXFV202E5TA Diodes Incorporated ZXFVX.pdf Description: IC AMPLIFIER VIDEO SGL SOT23-5
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ZXCD1000EQ16TA ZXCD1000EQ16TA Diodes Incorporated ZXCD1000.pdf Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
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ZXSC100X8TA ZXSC100X8TA Diodes Incorporated ZXSC100.pdf Description: IC REG CTRLR BOOST 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
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ZXSC100N8TA ZXSC100N8TA Diodes Incorporated ZXSC100.pdf Description: IC REG CTRLR BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-SO
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
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ZXSC300E5TA ZXSC300E5TA Diodes Incorporated ZXSC300.pdf Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
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ZXSC100-EVAL ZXSC100-EVAL Diodes Incorporated ZXSC100.pdf Description: EVAL BOARD FOR ZXSC100
Voltage - Output: 3.3V
Voltage - Input: 0.93V ~ 3.5V
Current - Output: 100mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: ZXSC100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 330 mW
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ZXCT1009FTA ZXCT1009FTA Diodes Incorporated ZXCT1009.pdf Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
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ZXM66P02N8TA ZXM66P02N8TA Diodes Incorporated ZXM66P02N8.pdf Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
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ZXMD65P02N8TA ZXMD65P02N8TA Diodes Incorporated ZXMD65P02N8.pdf Description: MOSFET 2P-CH 20V 4A 8-SOIC
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ZXM66P03N8TA ZXM66P03N8TA Diodes Incorporated ZXM66P03N8.pdf Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Produkt ist nicht verfügbar
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FMMT620TA FMMT620TA Diodes Incorporated FMMT620.pdf Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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FCX658ATA FCX658ATA Diodes Incorporated FCX658A.pdf Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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ZVN4525GTA ZVN4525GTA Diodes Incorporated ZVN4525G.pdf Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
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ZVN4525ZTA ZVN4525ZTA Diodes Incorporated ZVN4525Z.pdf Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
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ZVN4525E6TA ZVN4525E6TA Diodes Incorporated ZVN4525E6.pdf Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
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ZVP4525GTA ZVP4525GTA Diodes Incorporated ZVP4525G.pdf Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
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ZVP4525ZTA ZVP4525ZTA Diodes Incorporated ZVP4525Z.pdf Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
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ZXMN2A04DN8TA ZXMN2A04DN8TA Diodes Incorporated ZXMN2A04DN8.pdf Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMN2A02X8TA ZXMN2A02X8TA Diodes Incorporated ZXMN2A02X8.pdf Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
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ZXMN2A03E6TA ZXMN2A03E6TA Diodes Incorporated ZXMN2A03E6.pdf Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
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ZXMN2A01FTA ZXMN2A01FTA Diodes Incorporated ZXMN2A01F.pdf Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
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ZXMN3B04N8TA ZXMN3B04N8TA Diodes Incorporated ZXMN3B04N8.pdf Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
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ZXMN3A04DN8TA ZXMN3A04DN8TA Diodes Incorporated ZXMN3A04DN8.pdf Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMN3A06DN8TA ZXMN3A06DN8TA Diodes Incorporated ZXMN3A06DN8.pdf Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMN3A03E6TA ZXMN3A03E6TA Diodes Incorporated ZXMN3A03E6.pdf Description: MOSFET N-CH 30V 3.7A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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ZXMN3A01FTA ZXMN3A01FTA Diodes Incorporated ZXMN3A01F.pdf Description: MOSFET N-CH 30V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
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ZXMN6A09DN8TA ZXMN6A09DN8TA Diodes Incorporated ZXMN6A09DN8.pdf Description: MOSFET 2N-CH 60V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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ZXMN6A08E6TA ZXMN6A08E6TA Diodes Incorporated ZXMN6A08E6.pdf Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
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ZXMN6A11DN8TA ZXMN6A11DN8TA Diodes Incorporated ZXMN6A11DN8.pdf Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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ZXMN6A11GTA ZXMN6A11GTA Diodes Incorporated ZXMN6A11G.pdf Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
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ZXMN6A07ZTA ZXMN6A07ZTA Diodes Incorporated ZXMN6A07Z.pdf Description: MOSFET N-CH 60V 1.9A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
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ZXMN6A07FTA ZXMN6A07FTA Diodes Incorporated ZXMN6A07F.pdf Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
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ZXMN10A08E6TA ZXMN10A08E6TA Diodes Incorporated ZXMN10A08E6.pdf Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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ZXMN10A11GTA ZXMN10A11GTA Diodes Incorporated ZXMN10A11G.pdf Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
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ZXMN10A07ZTA ZXMN10A07ZTA Diodes Incorporated ZXMN10A07Z.pdf Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
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ZXMN10A07FTA ZXMN10A07FTA Diodes Incorporated ZXMN10A07F.pdf Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
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ZHCS2000TA ZHCS2000TA Diodes Incorporated ZHCS2000.pdf Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOT-26
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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ZXTD4591E6TA ZXTD4591E6TA Diodes Incorporated ZXTD4591E6.pdf Description: TRANS NPN/PNP 60V 1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-6
Part Status: Active
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ZXTD09N50DE6TA ZXTD09N50DE6TA Diodes Incorporated ZXTD09N50DE6.pdf Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
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ZXFV201N14TA ZXFV201N14TA Diodes Incorporated zxfv201.pdf Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
Produkt ist nicht verfügbar
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ZXFV202E5TA ZXFV202E5TA Diodes Incorporated ZXFVX.pdf Description: IC AMPLIFIER VIDEO SGL SOT23-5
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ZXFBF08W20TC ZXFBF08W20TC Diodes Incorporated ZXFBF08.pdf Description: IC OPAMP BUFFER 100MHZ 20SOIC
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ZXCD1000EQ16TA ZXCD1000EQ16TA Diodes Incorporated ZXCD1000.pdf Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
Produkt ist nicht verfügbar
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ZXSC300E5TA ZXSC300E5TA Diodes Incorporated ZXSC300.pdf Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
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ZXCT1009FTA ZXCT1009FTA Diodes Incorporated ZXCT1009.pdf Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
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ZXM66P02N8TA ZXM66P02N8TA Diodes Incorporated ZXM66P02N8.pdf Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMD65P02N8TA ZXMD65P02N8TA Diodes Incorporated ZXMD65P02N8.pdf Description: MOSFET 2P-CH 20V 4A 8-SOIC
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ZXM66P03N8TA ZXM66P03N8TA Diodes Incorporated ZXM66P03N8.pdf Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Produkt ist nicht verfügbar
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ZXMD65P03N8TA ZXMD65P03N8TA Diodes Incorporated zxmd65p03n8.pdf Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
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FMMT620TA FMMT620TA Diodes Incorporated FMMT620.pdf Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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FCX658ATA FCX658ATA Diodes Incorporated FCX658A.pdf Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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ZMM5258B-7 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5258B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 500MW MINIMELF
Produkt ist nicht verfügbar
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ZMM5259B-7 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5259B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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ZMM5260B-7 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5260B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 500MW MINIMELF
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ZMM5265B-7 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5265B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 62V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: Mini MELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
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ZMM5266B-7 ZMM5221B%20thru%20ZMM5267B.pdf
ZMM5266B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 68V 500MW MINI MELF
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Produkt ist nicht verfügbar
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ZRT025N8A1TA ZRT025issue1.pdf
ZRT025N8A1TA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% 8SOP
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-SO
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Cathode: 150 µA
Current - Output: 75 mA
Produkt ist nicht verfügbar
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PI74ALVTC16240A PI74ALVTC16240.pdf
PI74ALVTC16240A
Hersteller: Diodes Incorporated
Description: IC BUFFER INVERT 3.6V 48TSSOP
Produkt ist nicht verfügbar
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ZVN4206AVSTOA ZVN4206AV.pdf
ZVN4206AVSTOA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
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ZXFV201N14TA zxfv201.pdf
ZXFV201N14TA
Hersteller: Diodes Incorporated
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
Produkt ist nicht verfügbar
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ZXFV202E5TA ZXFVX.pdf
ZXFV202E5TA
Hersteller: Diodes Incorporated
Description: IC AMPLIFIER VIDEO SGL SOT23-5
Produkt ist nicht verfügbar
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ZXCD1000EQ16TA ZXCD1000.pdf
ZXCD1000EQ16TA
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
Produkt ist nicht verfügbar
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ZXSC100X8TA ZXSC100.pdf
ZXSC100X8TA
Hersteller: Diodes Incorporated
Description: IC REG CTRLR BOOST 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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ZXSC100N8TA ZXSC100.pdf
ZXSC100N8TA
Hersteller: Diodes Incorporated
Description: IC REG CTRLR BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-SO
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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ZXSC300E5TA ZXSC300.pdf
ZXSC300E5TA
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.6 EUR
6000+0.58 EUR
9000+0.57 EUR
21000+0.56 EUR
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ZXSC100-EVAL ZXSC100.pdf
ZXSC100-EVAL
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR ZXSC100
Voltage - Output: 3.3V
Voltage - Input: 0.93V ~ 3.5V
Current - Output: 100mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: ZXSC100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 330 mW
Produkt ist nicht verfügbar
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ZXCT1009FTA ZXCT1009.pdf
ZXCT1009FTA
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
Produkt ist nicht verfügbar
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ZXM66P02N8TA ZXM66P02N8.pdf
ZXM66P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMD65P02N8TA ZXMD65P02N8.pdf
ZXMD65P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Produkt ist nicht verfügbar
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ZXM66P03N8TA ZXM66P03N8.pdf
ZXM66P03N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Produkt ist nicht verfügbar
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FMMT620TA FMMT620.pdf
FMMT620TA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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Anzahl Preis
3000+0.31 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.25 EUR
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FCX658ATA FCX658A.pdf
FCX658ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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1000+0.4 EUR
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ZVN4525GTA ZVN4525G.pdf
ZVN4525GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
auf Bestellung 369000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.58 EUR
2000+0.54 EUR
3000+0.51 EUR
5000+0.48 EUR
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ZVN4525ZTA ZVN4525Z.pdf
ZVN4525ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
auf Bestellung 14000 Stücke:
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Anzahl Preis
1000+0.56 EUR
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3000+0.49 EUR
5000+0.46 EUR
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ZVN4525E6TA ZVN4525E6.pdf
ZVN4525E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
6000+0.49 EUR
9000+0.48 EUR
Mindestbestellmenge: 3000
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ZVP4525GTA ZVP4525G.pdf
ZVP4525GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.47 EUR
2000+0.43 EUR
3000+0.41 EUR
5000+0.38 EUR
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ZVP4525ZTA ZVP4525Z.pdf
ZVP4525ZTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.65 EUR
2000+0.59 EUR
3000+0.57 EUR
5000+0.53 EUR
7000+0.52 EUR
10000+0.51 EUR
Mindestbestellmenge: 1000
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ZXMN2A04DN8TA ZXMN2A04DN8.pdf
ZXMN2A04DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.79 EUR
1000+1.52 EUR
2500+1.44 EUR
5000+1.39 EUR
Mindestbestellmenge: 500
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ZXMN2A02X8TA ZXMN2A02X8.pdf
ZXMN2A02X8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
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ZXMN2A03E6TA ZXMN2A03E6.pdf
ZXMN2A03E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
6000+0.49 EUR
9000+0.45 EUR
Mindestbestellmenge: 3000
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ZXMN2A01FTA ZXMN2A01F.pdf
ZXMN2A01FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
30000+0.16 EUR
Mindestbestellmenge: 3000
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ZXMN3B04N8TA ZXMN3B04N8.pdf
ZXMN3B04N8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.01 EUR
1000+0.82 EUR
2500+0.78 EUR
Mindestbestellmenge: 500
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ZXMN3A04DN8TA ZXMN3A04DN8.pdf
ZXMN3A04DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 23500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.19 EUR
1000+1.14 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A06DN8TA ZXMN3A06DN8.pdf
ZXMN3A06DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.16 EUR
Mindestbestellmenge: 500
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ZXMN3A03E6TA ZXMN3A03E6.pdf
ZXMN3A03E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
6000+0.47 EUR
9000+0.46 EUR
15000+0.45 EUR
Mindestbestellmenge: 3000
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ZXMN3A01FTA ZXMN3A01F.pdf
ZXMN3A01FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 507000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000
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ZXMN6A09DN8TA ZXMN6A09DN8.pdf
ZXMN6A09DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.41 EUR
1000+1.3 EUR
1500+1.25 EUR
2500+1.2 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08E6TA ZXMN6A08E6.pdf
ZXMN6A08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A11DN8TA ZXMN6A11DN8.pdf
ZXMN6A11DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A11GTA ZXMN6A11G.pdf
ZXMN6A11GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 325000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.48 EUR
2000+0.44 EUR
3000+0.42 EUR
5000+0.4 EUR
7000+0.39 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A07ZTA ZXMN6A07Z.pdf
ZXMN6A07ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.9A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.38 EUR
2000+0.34 EUR
3000+0.33 EUR
5000+0.32 EUR
7000+0.31 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A07FTA ZXMN6A07F.pdf
ZXMN6A07FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A08E6TA ZXMN10A08E6.pdf
ZXMN10A08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.3 EUR
9000+0.29 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A11GTA ZXMN10A11G.pdf
ZXMN10A11GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.49 EUR
2000+0.45 EUR
3000+0.43 EUR
5000+0.41 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A07ZTA ZXMN10A07Z.pdf
ZXMN10A07ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
auf Bestellung 43000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.28 EUR
3000+0.27 EUR
7000+0.26 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A07FTA ZXMN10A07F.pdf
ZXMN10A07FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
auf Bestellung 1227000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZHCS2000TA ZHCS2000.pdf
ZHCS2000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOT-26
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 1221000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.35 EUR
Mindestbestellmenge: 3000
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ZXTD4591E6TA ZXTD4591E6.pdf
ZXTD4591E6TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V 1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-6
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.37 EUR
9000+0.36 EUR
15000+0.34 EUR
Mindestbestellmenge: 3000
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ZXTD09N50DE6TA ZXTD09N50DE6.pdf
ZXTD09N50DE6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.67 EUR
6000+0.63 EUR
9000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXFV201N14TA zxfv201.pdf
ZXFV201N14TA
Hersteller: Diodes Incorporated
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
Produkt ist nicht verfügbar
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ZXFV202E5TA ZXFVX.pdf
ZXFV202E5TA
Hersteller: Diodes Incorporated
Description: IC AMPLIFIER VIDEO SGL SOT23-5
Produkt ist nicht verfügbar
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ZXFBF08W20TC ZXFBF08.pdf
ZXFBF08W20TC
Hersteller: Diodes Incorporated
Description: IC OPAMP BUFFER 100MHZ 20SOIC
Produkt ist nicht verfügbar
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ZXCD1000EQ16TA ZXCD1000.pdf
ZXCD1000EQ16TA
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
Produkt ist nicht verfügbar
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ZXSC300E5TA ZXSC300.pdf
ZXSC300E5TA
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
auf Bestellung 32652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
20+0.92 EUR
25+0.83 EUR
100+0.73 EUR
250+0.68 EUR
500+0.65 EUR
1000+0.62 EUR
Mindestbestellmenge: 14
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ZXCT1009FTA ZXCT1009.pdf
ZXCT1009FTA
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
auf Bestellung 1312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
17+1.09 EUR
25+0.98 EUR
100+0.86 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.75 EUR
Mindestbestellmenge: 12
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ZXM66P02N8TA ZXM66P02N8.pdf
ZXM66P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMD65P02N8TA ZXMD65P02N8.pdf
ZXMD65P02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Produkt ist nicht verfügbar
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ZXM66P03N8TA ZXM66P03N8.pdf
ZXM66P03N8TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Produkt ist nicht verfügbar
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ZXMD65P03N8TA zxmd65p03n8.pdf
ZXMD65P03N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
Produkt ist nicht verfügbar
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FMMT620TA FMMT620.pdf
FMMT620TA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
auf Bestellung 41744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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FCX658ATA FCX658A.pdf
FCX658ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
auf Bestellung 46145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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