Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73188) > Seite 1220 nach 1220
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| BC847BVCQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Application: automotive industry |
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| RDBF310-13 | DIODES INCORPORATED |
 Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 3A Max. forward impulse current: 100A Case: DBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| MMBZ5240BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Semiconductor structure: triple independent |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP26M1UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -110A Power dissipation: 3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 164nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BC53-16PA-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.52W Case: U-DFN2020-3 Pulsed collector current: 2A Current gain: 25...250 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 125MHz |
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| AP63200QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 1.2...12V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 93% Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DDTC123YUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 Quantity in set/package: 3000pcs. |
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MURS140-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Capacitance: 10pF |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002VAC-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| 2N7002VC-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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DMP2200UDW-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363 Case: SOT363 Mounting: SMD Kind of package: 13 inch reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -700mA Gate charge: 2.1nC Power dissipation: 0.6W On-state resistance: 1Ω Gate-source voltage: ±8V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DMP2200UDW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2900UV-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Drain current: -680mA Gate charge: 0.7nC Power dissipation: 0.8W Gate-source voltage: ±6V Kind of package: 13 inch reel; tape On-state resistance: 25Ω Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP2900UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Drain current: -680mA Gate charge: 0.7nC Power dissipation: 0.8W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape On-state resistance: 25Ω Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.5A |
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DMN4034SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 24.8A Power dissipation: 2.14W Case: SO8 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG3414UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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DMG3414UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMT8012LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 28A Pulsed drain current: 80A Power dissipation: 2.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DMT8012LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 30A Power dissipation: 2.2W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| DMT8012LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 80A Power dissipation: 2.2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT8012LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.2A Pulsed drain current: 80A Power dissipation: 2.1W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DMT8012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.8A Pulsed drain current: 80A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZT52C4V7S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZT52C4V3S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| BZT52C4V3LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: X1-DFN1006-2 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZT52C4V3T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZT52C4V3TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZT52C4V7SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZT52C4V7TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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| BC847BVCQ-7 |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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| RDBF310-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| MMBZ5240BTS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMP26M1UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -110A
Power dissipation: 3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -110A
Power dissipation: 3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BC53-16PA-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.52W
Case: U-DFN2020-3
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.52W
Case: U-DFN2020-3
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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| AP63200QWU-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DDTC123YUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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| MURS140-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 216+ | 0.33 EUR |
| 249+ | 0.29 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| DMN2004K-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 281+ | 0.25 EUR |
| 365+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 516+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2N7002VAC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002VC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DMP2200UDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Gate charge: 2.1nC
Power dissipation: 0.6W
On-state resistance: 1Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Gate charge: 2.1nC
Power dissipation: 0.6W
On-state resistance: 1Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| DMP2200UDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 69000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.084 EUR |
| DMP2900UV-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 13 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 13 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Produkt ist nicht verfügbar
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| DMP2900UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN4034SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 24.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 24.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMG3414UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG3414UQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| DMT8012LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 2.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 2.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT8012LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Power dissipation: 2.2W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Power dissipation: 2.2W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT8012LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 80A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 80A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT8012LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.2A
Pulsed drain current: 80A
Power dissipation: 2.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.2A
Pulsed drain current: 80A
Power dissipation: 2.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMT8012LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.8A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.8A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BZT52C4V7S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C4V3S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C4V3LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZT52C4V3T-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| BZT52C4V3TQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C4V7SQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C4V7TQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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