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MMDT5401-7-F MMDT5401-7-F DIODES INCORPORATED ds30169.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST5401-7-F MMST5401-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST5401Q-7-F MMST5401Q-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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MMDT5401Q-7-F MMDT5401Q-7-F DIODES INCORPORATED MMDT5401Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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MMBZ5223B-7-F MMBZ5223B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
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MMBZ5223BT-7-F DIODES INCORPORATED ds30267.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
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MMBZ5223BW-7-F MMBZ5223BW-7-F DIODES INCORPORATED ds31037.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
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DLD101-7 DLD101-7 DIODES INCORPORATED DLD101.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
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167+0.51 EUR
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231+0.37 EUR
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DLD101Q-7 DLD101Q-7 DIODES INCORPORATED DLD101.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Application: automotive industry
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
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AH1883-ZG-7 AH1883-ZG-7 DIODES INCORPORATED AH1883.pdf Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
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AH1810-W-7 DIODES INCORPORATED Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: SC59
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AH1822-FT4G-7 DIODES INCORPORATED AH1822.pdf Category: Hall Sensors
Description: Sensor: Hall; omnipolar; DFN2015-6; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: DFN2015-6
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AH1887-ZG-7 AH1887-ZG-7 DIODES INCORPORATED AH1887.pdf Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
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AH1892-Z-7 AH1892-Z-7 DIODES INCORPORATED AH1892.pdf Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
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AH1894-Z-7 AH1894-Z-7 DIODES INCORPORATED AH1894.pdf Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
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DMN3135LVT-7 DMN3135LVT-7 DIODES INCORPORATED DMN3135LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 25A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DFLS1100Q-7 DFLS1100Q-7 DIODES INCORPORATED ds30497.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 0.35mA
Capacitance: 36pF
Type of diode: Schottky rectifying
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DMN1019USN-13 DIODES INCORPORATED DMN1019USN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN1019UVT-7 DMN1019UVT-7 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1019UFDE-7 DIODES INCORPORATED DMN1019UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN1019UVT-13 DMN1019UVT-13 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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1SMB5938B-13 1SMB5938B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZXMS6004DN8-13 ZXMS6004DN8-13 DIODES INCORPORATED ZXMS6004DN8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DN8Q-13 ZXMS6004DN8Q-13 DIODES INCORPORATED ZXMS6004DN8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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D3V3M1U2S9-7 D3V3M1U2S9-7 DIODES INCORPORATED D3V3M1U2S9.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; 12A; unidirectional; SOD923; reel,tape
Max. forward impulse current: 12A
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 2µA
Case: SOD923
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 5V
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T3V3S5A-7 DIODES INCORPORATED T3V3S5A_T5V0S5A_T6V0S5A_T12S5A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 5V; 16A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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AP3401DNTR-G1 AP3401DNTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...5.5V DC
Output current: 1A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Efficiency: 95%
Output voltage: 0.6...5.5V DC
Kind of integrated circuit: DC/DC converter
Frequency: 1.5MHz
Topology: buck
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DMN3401LDW-7 DMN3401LDW-7 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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625+0.13 EUR
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PI49FCT3807AHE PI49FCT3807AHE DIODES INCORPORATED PI49FCT3807.pdf Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
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ZXMN6A08E6TA ZXMN6A08E6TA DIODES INCORPORATED ZXMN6A08E6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.1W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
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ZXMN6A08E6QTA ZXMN6A08E6QTA DIODES INCORPORATED ZXMN6A08E6Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 16A; 1.7W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.7W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of package: reel; tape
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LM2904AM8-13 LM2904AM8-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904M8-13 LM2904M8-13 DIODES INCORPORATED LM2902_04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904TH-13 LM2904TH-13 DIODES INCORPORATED LM2902_04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904S-13 LM2904S-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
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298+0.29 EUR
407+0.21 EUR
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MMSTA92-7-F MMSTA92-7-F DIODES INCORPORATED ds30174.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
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B530CQ-13-F DIODES INCORPORATED B520CQ-B560CQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 5A
Capacitance: 0.3nF
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AP1117EG-13 AP1117EG-13 DIODES INCORPORATED AP1117%28I%29.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 1A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
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S10MC-13 DIODES INCORPORATED S10JC-S10MC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 200A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 200A
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APX803L20-16SA-7 APX803L20-16SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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353+0.24 EUR
397+0.21 EUR
468+0.18 EUR
562+0.15 EUR
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SMAJ90A-13-F SMAJ90A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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368+0.23 EUR
449+0.19 EUR
610+0.14 EUR
828+0.1 EUR
1000+0.09 EUR
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B0540WQ-7-F B0540WQ-7-F DIODES INCORPORATED B0540WQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 13mA
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APX823-26W5G-7 APX823-26W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Delay time: 200ms
Maximum output current: 20mA
DC supply current: 30µA
auf Bestellung 2974 Stücke:
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250+0.35 EUR
278+0.31 EUR
323+0.26 EUR
388+0.21 EUR
421+0.2 EUR
500+0.19 EUR
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ZSR1000GTA ZSR1000GTA DIODES INCORPORATED ZSR.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
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FMMT459TA FMMT459TA DIODES INCORPORATED FMMT459.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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FMMT459QTA FMMT459QTA DIODES INCORPORATED FMMT459Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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SBR0220LP-7 DIODES INCORPORATED SBR0220LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 20V; 0.2A
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.48V
Technology: SBR®
Max. off-state voltage: 20V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: X1-DFN1006-2
Type of diode: Schottky switching
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SBR0220T5-7 SBR0220T5-7 DIODES INCORPORATED SBR0220T5.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.2A; 5ns; SOD523; SBR®; reel,tape
Mounting: SMD
Technology: SBR®
Features of semiconductor devices: small signal
Max. off-state voltage: 20V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Type of diode: switching
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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DMP45H150DHE-13 DMP45H150DHE-13 DIODES INCORPORATED DMP45H150DHE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.2A
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP45H21DHE-13 DMP45H21DHE-13 DIODES INCORPORATED DMP45H21DHE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -400mA
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP45H4D9HJ3 DMP45H4D9HJ3 DIODES INCORPORATED DMP45H4D9HJ3.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhancement
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124+0.69 EUR
137+0.62 EUR
150+0.58 EUR
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DMP45H4D9HK3-13 DMP45H4D9HK3-13 DIODES INCORPORATED DMP45H4D9HK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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S5KC-13-F DIODES INCORPORATED ds16007.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
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GBJ2508-F GBJ2508-F DIODES INCORPORATED GBJ25_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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11+7.75 EUR
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GBJ1508-F GBJ1508-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 15A
Kind of package: tube
Case: GBJ
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38+2.28 EUR
40+2.14 EUR
41+2.07 EUR
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LM2903S-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Number of comparators: 2
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Input offset current: 0.2nA
Case: SO8
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 15mV
Type of integrated circuit: comparator
Kind of output: open collector
Operating temperature: -40...125°C
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DMTH4004SK3-13 DIODES INCORPORATED DMTH4004SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
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DMTH4004SK3Q-13 DIODES INCORPORATED DMTH4004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Produkt ist nicht verfügbar
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DST847BDJ-7 DIODES INCORPORATED ds32035.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT963
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...170MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
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DST847BPDP6-7 DIODES INCORPORATED DST847BPDP6.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...175MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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MMDT5401-7-F ds30169.pdf
MMDT5401-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST5401-7-F MMST5401.pdf
MMST5401-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST5401Q-7-F MMST5401.pdf
MMST5401Q-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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MMDT5401Q-7-F MMDT5401Q.pdf
MMDT5401Q-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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MMBZ5223B-7-F MMBZ5221B-MMBZ5259B.pdf
MMBZ5223B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
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MMBZ5223BT-7-F ds30267.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
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MMBZ5223BW-7-F ds31037.pdf
MMBZ5223BW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
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DLD101-7 DLD101.pdf
DLD101-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
auf Bestellung 480 Stücke:
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114+0.75 EUR
167+0.51 EUR
186+0.46 EUR
231+0.37 EUR
271+0.31 EUR
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DLD101Q-7 DLD101.pdf
DLD101Q-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Application: automotive industry
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
auf Bestellung 2979 Stücke:
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80+1.07 EUR
202+0.42 EUR
229+0.37 EUR
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AH1883-ZG-7 AH1883.pdf
AH1883-ZG-7
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
auf Bestellung 3000 Stücke:
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3000+0.62 EUR
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AH1810-W-7
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: SC59
auf Bestellung 3000 Stücke:
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3000+0.58 EUR
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AH1822-FT4G-7 AH1822.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; DFN2015-6; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: DFN2015-6
auf Bestellung 3000 Stücke:
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3000+0.92 EUR
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AH1887-ZG-7 AH1887.pdf
AH1887-ZG-7
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.73 EUR
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AH1892-Z-7 AH1892.pdf
AH1892-Z-7
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
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3000+0.48 EUR
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AH1894-Z-7 AH1894.pdf
AH1894-Z-7
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
auf Bestellung 9000 Stücke:
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3000+0.64 EUR
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DMN3135LVT-7 DMN3135LVT.pdf
DMN3135LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 25A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DFLS1100Q-7 ds30497.pdf
DFLS1100Q-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 0.35mA
Capacitance: 36pF
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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DMN1019USN-13 DMN1019USN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN1019UFDE-7 DMN1019UFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1SMB5938B-13 1SMB59xxB_ser.pdf
1SMB5938B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZXMS6004DN8-13 ZXMS6004DN8.pdf
ZXMS6004DN8-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6004DN8Q-13 ZXMS6004DN8Q.pdf
ZXMS6004DN8Q-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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D3V3M1U2S9-7 D3V3M1U2S9.pdf
D3V3M1U2S9-7
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; 12A; unidirectional; SOD923; reel,tape
Max. forward impulse current: 12A
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 2µA
Case: SOD923
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 5V
Produkt ist nicht verfügbar
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T3V3S5A-7 T3V3S5A_T5V0S5A_T6V0S5A_T12S5A.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 5V; 16A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP3401DNTR-G1 AP3401x-DTE.pdf
AP3401DNTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...5.5V DC
Output current: 1A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Efficiency: 95%
Output voltage: 0.6...5.5V DC
Kind of integrated circuit: DC/DC converter
Frequency: 1.5MHz
Topology: buck
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193+0.44 EUR
248+0.35 EUR
296+0.29 EUR
379+0.23 EUR
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DMN3401LDW-7 DMN3401LDW.pdf
DMN3401LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2899 Stücke:
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186+0.46 EUR
280+0.31 EUR
458+0.19 EUR
549+0.15 EUR
625+0.13 EUR
1000+0.12 EUR
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PI49FCT3807AHE PI49FCT3807.pdf
PI49FCT3807AHE
Hersteller: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
Produkt ist nicht verfügbar
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ZXMN6A08E6TA ZXMN6A08E6.pdf
ZXMN6A08E6TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.1W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZXMN6A08E6QTA ZXMN6A08E6Q.pdf
ZXMN6A08E6QTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 16A; 1.7W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.7W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LM2904AM8-13 LM2902Q_04Q.pdf
LM2904AM8-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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381+0.23 EUR
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LM2904M8-13 LM2902_04.pdf
LM2904M8-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904TH-13 LM2902_04.pdf
LM2904TH-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 1272 Stücke:
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148+0.58 EUR
241+0.36 EUR
300+0.29 EUR
410+0.2 EUR
496+0.17 EUR
1000+0.15 EUR
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LM2904S-13 LM2902Q_04Q.pdf
LM2904S-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 647 Stücke:
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148+0.58 EUR
240+0.36 EUR
298+0.29 EUR
407+0.21 EUR
491+0.18 EUR
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MMSTA92-7-F ds30174.pdf
MMSTA92-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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B530CQ-13-F B520CQ-B560CQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 5A
Capacitance: 0.3nF
Produkt ist nicht verfügbar
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AP1117EG-13 AP1117%28I%29.pdf
AP1117EG-13
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 1A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Produkt ist nicht verfügbar
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S10MC-13 S10JC-S10MC.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 200A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX803L20-16SA-7 APX803L.pdf
APX803L20-16SA-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
auf Bestellung 2977 Stücke:
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278+0.31 EUR
353+0.24 EUR
397+0.21 EUR
468+0.18 EUR
562+0.15 EUR
603+0.14 EUR
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SMAJ90A-13-F SMAJ_ser.pdf
SMAJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3240 Stücke:
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264+0.32 EUR
368+0.23 EUR
449+0.19 EUR
610+0.14 EUR
828+0.1 EUR
1000+0.09 EUR
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B0540WQ-7-F B0540WQ.pdf
B0540WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 13mA
Produkt ist nicht verfügbar
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APX823-26W5G-7 APX823_824_825A.pdf
APX823-26W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Delay time: 200ms
Maximum output current: 20mA
DC supply current: 30µA
auf Bestellung 2974 Stücke:
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200+0.43 EUR
250+0.35 EUR
278+0.31 EUR
323+0.26 EUR
388+0.21 EUR
421+0.2 EUR
500+0.19 EUR
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ZSR1000GTA ZSR.pdf
ZSR1000GTA
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
Produkt ist nicht verfügbar
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FMMT459TA FMMT459.pdf
FMMT459TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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FMMT459QTA FMMT459Q.pdf
FMMT459QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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SBR0220LP-7 SBR0220LP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 20V; 0.2A
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.48V
Technology: SBR®
Max. off-state voltage: 20V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: X1-DFN1006-2
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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SBR0220T5-7 SBR0220T5.pdf
SBR0220T5-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.2A; 5ns; SOD523; SBR®; reel,tape
Mounting: SMD
Technology: SBR®
Features of semiconductor devices: small signal
Max. off-state voltage: 20V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Type of diode: switching
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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DMP45H150DHE-13 DMP45H150DHE.pdf
DMP45H150DHE-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.2A
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP45H21DHE-13 DMP45H21DHE.pdf
DMP45H21DHE-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -400mA
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMP45H4D9HJ3 DMP45H4D9HJ3.pdf
DMP45H4D9HJ3
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
124+0.69 EUR
137+0.62 EUR
150+0.58 EUR
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DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
DMP45H4D9HK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S5KC-13-F ds16007.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GBJ2508-F GBJ25_ser.pdf
GBJ2508-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.75 EUR
Mindestbestellmenge: 11 Stücke
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GBJ1508-F GBJ15_ser.pdf
GBJ1508-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 15A
Kind of package: tube
Case: GBJ
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.27 EUR
38+2.28 EUR
40+2.14 EUR
41+2.07 EUR
Mindestbestellmenge: 27 Stücke
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LM2903S-13 LM2901-03.pdf
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Number of comparators: 2
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Input offset current: 0.2nA
Case: SO8
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 15mV
Type of integrated circuit: comparator
Kind of output: open collector
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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DMTH4004SK3-13 DMTH4004SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Produkt ist nicht verfügbar
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DMTH4004SK3Q-13 DMTH4004SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Produkt ist nicht verfügbar
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DST847BDJ-7 ds32035.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT963
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...170MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
Produkt ist nicht verfügbar
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DST847BPDP6-7 DST847BPDP6.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...175MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
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